JPS60187083A - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS60187083A
JPS60187083A JP4365584A JP4365584A JPS60187083A JP S60187083 A JPS60187083 A JP S60187083A JP 4365584 A JP4365584 A JP 4365584A JP 4365584 A JP4365584 A JP 4365584A JP S60187083 A JPS60187083 A JP S60187083A
Authority
JP
Japan
Prior art keywords
refractive index
mesa
layer
semiconductor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4365584A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0552677B2 (enrdf_load_stackoverflow
Inventor
Kenichi Kobayashi
健一 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4365584A priority Critical patent/JPS60187083A/ja
Publication of JPS60187083A publication Critical patent/JPS60187083A/ja
Publication of JPH0552677B2 publication Critical patent/JPH0552677B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Semiconductor Lasers (AREA)
JP4365584A 1984-03-07 1984-03-07 半導体レ−ザ Granted JPS60187083A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4365584A JPS60187083A (ja) 1984-03-07 1984-03-07 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4365584A JPS60187083A (ja) 1984-03-07 1984-03-07 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS60187083A true JPS60187083A (ja) 1985-09-24
JPH0552677B2 JPH0552677B2 (enrdf_load_stackoverflow) 1993-08-06

Family

ID=12669876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4365584A Granted JPS60187083A (ja) 1984-03-07 1984-03-07 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS60187083A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0552677B2 (enrdf_load_stackoverflow) 1993-08-06

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