JPS60182778A - Semiconductor light receiving device - Google Patents
Semiconductor light receiving deviceInfo
- Publication number
- JPS60182778A JPS60182778A JP59039409A JP3940984A JPS60182778A JP S60182778 A JPS60182778 A JP S60182778A JP 59039409 A JP59039409 A JP 59039409A JP 3940984 A JP3940984 A JP 3940984A JP S60182778 A JPS60182778 A JP S60182778A
- Authority
- JP
- Japan
- Prior art keywords
- gap
- light
- light receiving
- surrounding
- periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（ａｌ 発明の技術分野
本発明は半導体受光装置のうち、特に遮光マスクに関す
る。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a semiconductor light receiving device, and particularly to a light shielding mask.
（ｂ） 従来技術と問題点
フォトダイオードなどの半導体受光素子は、オプトエレ
クトロニクスの発展と共に益々汎用されている。従って
、半導体受光素子を低価格化することが重要な課題で、
そのためには製造工程を短縮することが大切である。(b) Prior Art and Problems Semiconductor light-receiving elements such as photodiodes have become increasingly popular with the development of optoelectronics. Therefore, it is an important issue to reduce the cost of semiconductor photodetectors.
To this end, it is important to shorten the manufacturing process.
第１図は従前の受光素子の断面構造図を示しており、１
はｎ型シリコン基板、２はｐ＋型シリコン領域、３，５
は二酸化シリコン（ＳｉＯ２） 膜。Figure 1 shows a cross-sectional structural diagram of a conventional light-receiving element.
is an n-type silicon substrate, 2 is a p+ type silicon region, 3, 5
is a silicon dioxide (SiO2) film.
４はアルミニウムからなる遮光マスク、６はアルミニウ
ムからなるコンタクト電極である。且つ、コンタクト電
極６にはワイヤーをボンディングする為のポンディング
パッド部６−１があり、又、７は受光部である。4 is a light-shielding mask made of aluminum, and 6 is a contact electrode made of aluminum. Further, the contact electrode 6 has a bonding pad portion 6-1 for bonding a wire, and 7 is a light receiving portion.
しかしながら、このような構造にすると、その形成方法
は５ｉ０２膜３上に遮光マスク４をパターンニングし、
次いで５ｉ０２膜５を被着して、更に再びコンタクト電
極をパターンニングしなければならない。このように、
同じアルミニウム膜よりなる遮光マスク４とコンタクト
電極６とを別々に形成すると、製造工程が増加して、そ
れだけコストが高くなる。However, when such a structure is formed, the formation method is to pattern a light-shielding mask 4 on the 5i02 film 3,
The 5i02 film 5 must then be applied and the contact electrodes must be patterned again. in this way,
If the light-shielding mask 4 and the contact electrode 6 made of the same aluminum film are formed separately, the number of manufacturing steps increases, which increases the cost accordingly.
従って、最近には第２図および第３図（第２図は断面図
、第３図は平面図）に示すような構造の受光素子が作成
されている。図において、１はｎ型シリコン基板、２は
ｐ＋型シリコン領域、３は５ｉ０２膜、７は受光部、１
４は遮光マスク、１６はコンタクト電極、１６４はポン
ディングパッド部であるが、このようにすると、同じア
ルミニウム膜よりなる遮光マスク１４とコンタクト電極
１６とを同時に形成することができて、製造工程が短縮
されて製造コストを低下することができる。Therefore, recently, light receiving elements having structures as shown in FIGS. 2 and 3 (FIG. 2 is a sectional view and FIG. 3 is a plan view) have been produced. In the figure, 1 is an n-type silicon substrate, 2 is a p+ type silicon region, 3 is a 5i02 film, 7 is a light receiving part, 1
4 is a light-shielding mask, 16 is a contact electrode, and 164 is a bonding pad part. By doing this, the light-shielding mask 14 and the contact electrode 16 made of the same aluminum film can be formed at the same time, and the manufacturing process can be simplified. This can reduce manufacturing costs.
ところが、この構造は同じアルミニウム膜からなる遮光
マスク１４とコンタクト電極１６とを同一平面上に形成
するために、図示のように遮光マスク１４とコンタクト
電極１６との間に間隙りを設けなければ、短絡する恐れ
がある。その間隙の幅は、例えば２０μｍ程度としてお
り、一方、受光部７の広さは直径１００μｍφ程度であ
る（第２図、第３図は理解し易くするため間隙を広く強
調した図である）。この寸法はマスクと電極との短絡を
防止するために必要な幅ではあるが、ワイヤーをボンデ
ィングした際の電極ずれを見込んで更に広い幅に形成さ
れているものである。However, in this structure, in order to form the light-shielding mask 14 and the contact electrode 16 made of the same aluminum film on the same plane, unless a gap is provided between the light-shielding mask 14 and the contact electrode 16 as shown in the figure, There is a risk of short circuit. The width of the gap is, for example, about 20 .mu.m, and the width of the light receiving section 7 is about 100 .mu.m in diameter (FIGS. 2 and 3 are diagrams in which the gap is exaggerated to make it easier to understand). Although this dimension is necessary to prevent a short circuit between the mask and the electrode, it is made wider in consideration of electrode displacement when bonding wires.
そのため、使用中に光を照射すると間隙りにも光が照射
され、この間隙からの入射光によって励起されたキャリ
ア（電子、正孔）は、ｐｎ接合部を通らずに拡散で移動
するから動作が遅く、このキャリアが増加すると素子動
作の高速化を阻害するようになる。Therefore, when light is irradiated during use, the light is also irradiated into the gap, and carriers (electrons, holes) excited by the incident light from this gap move by diffusion without passing through the p-n junction, so it works. is slow, and an increase in these carriers impedes the speeding up of device operation.
（ｅ） 発明の目的
本発明は、このような問題点を取り除いた構造の受光素
子を提案するものである。(e) Object of the Invention The present invention proposes a light receiving element having a structure that eliminates such problems.
ｆｄ） 発明の構成
その目的は、受光部を囲む周囲部分およびボンディング
パ・／ド部分からなるコンタクト電極と、該コンタクト
電極の周りを遮蔽する遮光マスクとの間に間隙が設けら
れ、該間隙がボンディングバンド部分の周囲で、受光部
を囲む包囲電極部分の周囲よりも幅広く構成されている
半導体受光装置によって達成される。fd) Structure of the invention The object is to provide a gap between a contact electrode consisting of a peripheral portion surrounding a light receiving portion and a bonding pad/pad portion, and a light shielding mask that shields the periphery of the contact electrode. This is achieved by a semiconductor light receiving device in which the area around the bonding band part is wider than the area around the surrounding electrode part surrounding the light receiving part.
（ｅ）発明の実施例 以下２図面を参照して実施例によって詳細に説明する。(e) Examples of the invention Examples will be described in detail below with reference to two drawings.
第４図、第５図は本発明にかかる受光素子の構造を示し
ており、第４図は断面図、第５図は平面図である。図に
おいて、第２図、第３図と同一部材には同一符号を付し
であるが、図示のように、コンタク］・電極１６と遮光
マスク１４との間隔は受光部を囲む周囲電極部分の間隙
Ｄ１を狭く、例えば５μｍ程度にして、ボンディングバ
ンド部分周囲の間隙Ｄ２を広く、例えば２０μｍ程度に
する。4 and 5 show the structure of a light receiving element according to the present invention, with FIG. 4 being a sectional view and FIG. 5 being a plan view. In the figure, the same members as in FIGS. 2 and 3 are given the same reference numerals. The gap D1 is made narrow, for example, about 5 μm, and the gap D2 around the bonding band portion is made wide, for example, about 20 μm.
このような構造にすると、受光部７を囲む周囲電極部分
の間隙り、を狭くしであるため、この間隙を５ｉ０２膜
３ （膜厚２０００人位）を透過して入る光量が減少し
、それによって励起されるキャリアは減少する。他方、
ポンディングパッド部分周囲の間隙Ｄ２を広くしている
が、この間隙への入射光の強度は弱いために励起される
キャリアが少なく、素子動作にさほどの影響を及ぼさな
い。且つ、十分に広い幅を有するから、ボンディングに
よる短絡の恐れがなくて、製造歩留を低下することもな
い。With this structure, the gap between the peripheral electrodes surrounding the light receiving part 7 is narrowed, so the amount of light that passes through this gap through the 5i02 film 3 (film thickness of about 2000 mm) is reduced, and The number of carriers excited by this decreases. On the other hand,
Although the gap D2 around the bonding pad portion is widened, since the intensity of the light incident on this gap is weak, few carriers are excited, and the device operation is not significantly affected. In addition, since it has a sufficiently wide width, there is no risk of short circuiting due to bonding, and there is no reduction in manufacturing yield.
（ｆ） 発明の効果
以上の実施例から明らかなように、本発明によれば高速
動作環、高性能化した受光素子を低コストで得ることが
できる。従って、本発明は極めて有効な利点を有する構
造である。(f) Effects of the Invention As is clear from the above embodiments, according to the present invention, a high-speed operation ring and a high-performance light receiving element can be obtained at low cost. Therefore, the present invention is a structure with very significant advantages.
尚、上記例はシリコン受光素子であるが、ゲルマニウム
、インジウム燐、インジウムガリウム砒素、ガリウム砒
素などからなる受光素子にも適用できることは云うまで
もない。Although the above example is a silicon light receiving element, it goes without saying that the present invention can also be applied to light receiving elements made of germanium, indium phosphide, indium gallium arsenide, gallium arsenide, or the like.
第１図は従前の受光素子の断面図、第２図、第３図は従
来の受光素子の断面図と平面図、第４図。
第５図は本発明にかかる受光素子の断面図と平面図であ
る。
図中、１はｎ型シリコン基板、２はｐ＋型シリコン領域
、３は５１０２膜、７は受光部、４．１４は遮光マスク
、６．１６はコンタクト電極、６−１゜１６−１はボン
ディングバンド部、Ｄ、ＤＩ 、Ｄ２は間隙を示してい
る。
第１図
第２図
第４図
第５図FIG. 1 is a cross-sectional view of a conventional light-receiving element, FIGS. 2 and 3 are cross-sectional views and plan views of the conventional light-receiving element, and FIG. 4 is a cross-sectional view of a conventional light-receiving element. FIG. 5 is a sectional view and a plan view of a light receiving element according to the present invention. In the figure, 1 is an n-type silicon substrate, 2 is a p+ type silicon region, 3 is a 5102 film, 7 is a light receiving part, 4.14 is a light shielding mask, 6.16 is a contact electrode, 6-1° 16-1 is a bonding Band portions D, DI, and D2 indicate gaps. Figure 1 Figure 2 Figure 4 Figure 5
Claims (1)
らなるコンタクト電極と、該コンタクト電極の周りを遮
蔽する遮光マスクとの間に間隙が設けられ、該間隙がポ
ンディングパッド部分の周囲で、受光部を囲む包囲電極
部分の周囲よりも幅広く構成されていることを特徴とす
る半導体受光装置。A gap is provided between a contact electrode consisting of a peripheral part surrounding the light receiving part and a bonding pad part, and a light shielding mask that shields the surroundings of the contact electrode, and the gap is formed around the bonding pad part, and the contact electrode consists of a surrounding part surrounding the light receiving part and a bonding pad part. A semiconductor light-receiving device characterized in that it is configured to be wider than the circumference of a surrounding electrode portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59039409A JPS60182778A (en) | 1984-02-29 | 1984-02-29 | Semiconductor light receiving device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59039409A JPS60182778A (en) | 1984-02-29 | 1984-02-29 | Semiconductor light receiving device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60182778A true JPS60182778A (en) | 1985-09-18 |
Family
ID=12552191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59039409A Pending JPS60182778A (en) | 1984-02-29 | 1984-02-29 | Semiconductor light receiving device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60182778A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01169977A (en) * | 1987-12-25 | 1989-07-05 | Fujitsu Ltd | Semiconductor photo-detector |
| US5040039A (en) * | 1990-01-25 | 1991-08-13 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor photodetector device |
| JPH03206671A (en) * | 1990-01-08 | 1991-09-10 | Nec Corp | Photodiode |
| JPH03276769A (en) * | 1990-03-27 | 1991-12-06 | Mitsubishi Electric Corp | Semiconductor photodetection device |
| US5304824A (en) * | 1990-08-31 | 1994-04-19 | Sumitomo Electric Industries, Ltd. | Photo-sensing device |
| US5315148A (en) * | 1990-08-31 | 1994-05-24 | Sumitomo Electric Industries, Ltd. | Photo-sensing device |
| EP1178541A2 (en) * | 2000-06-16 | 2002-02-06 | Nippon Sheet Glass Co., Ltd. | Semiconductor light-receiving element |
-
1984
- 1984-02-29 JP JP59039409A patent/JPS60182778A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01169977A (en) * | 1987-12-25 | 1989-07-05 | Fujitsu Ltd | Semiconductor photo-detector |
| JPH03206671A (en) * | 1990-01-08 | 1991-09-10 | Nec Corp | Photodiode |
| US5040039A (en) * | 1990-01-25 | 1991-08-13 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor photodetector device |
| NL9002098A (en) * | 1990-01-25 | 1991-08-16 | Mitsubishi Electric Corp | SEMICONDUCTOR LIGHT DETECTOR DEVICE. |
| JPH03276769A (en) * | 1990-03-27 | 1991-12-06 | Mitsubishi Electric Corp | Semiconductor photodetection device |
| US5304824A (en) * | 1990-08-31 | 1994-04-19 | Sumitomo Electric Industries, Ltd. | Photo-sensing device |
| US5315148A (en) * | 1990-08-31 | 1994-05-24 | Sumitomo Electric Industries, Ltd. | Photo-sensing device |
| EP1178541A2 (en) * | 2000-06-16 | 2002-02-06 | Nippon Sheet Glass Co., Ltd. | Semiconductor light-receiving element |
| EP1178541A3 (en) * | 2000-06-16 | 2003-07-09 | Nippon Sheet Glass Co., Ltd. | Semiconductor light-receiving element |
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