JPS60182131A - Thin film manufacturing device - Google Patents

Abstract

PURPOSE:To form a film at a high speed by heating one or more positions of a component in a chamber. CONSTITUTION:A cathode 7 and an anode 8 are mounted in a chamber 1 for forming a film, a high frequency power source 6 is connected with both ends to generate a glow discharge in the chamber. A substrate 5 is mounted on the anode 8, and silane gas is introduced at the discharge time. Further, a substrate heating heater 2 and a guard heating heater 3 are provided in the chamber 1, and heated at the film growing time. Thus, even if not diluted pure monosilane gas is used, powder substance is not adhered to the chamber 1 and the substrate 1, thereby accelerating the formation of the film.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an improvement in a thin film manufacturing apparatus for forming semiconductor films such as solar cells at high speed.

[Lateral technology] In the production of an amorphous Noricon thin film by a glow discharge method, conventionally, monomer gas diluted with hydrogen, argon, or other gases has been used. If this kind of diluent gas is introduced into the river, the rate of formation will be slowed down. In order to form a film at high speed, it is better to use a pure monomer gas that does not exceed 1R at a high temperature (at a high temperature). If it scatters inside the device or adheres to the board,
This has a negative effect on the film quality and also takes a long time to clean the equipment after a long time of film formation.

In general, since the decomposed nitrogen gas forms a film, the temperature of the part where the film is to be formed must be lower than a certain temperature. For this purpose, a circular heater is attached to the substrate to heat it, but the guard and cathode are heated by the glow discharge (A), but the temperature is too low for this to occur.

Therefore, in the guard and the force node portions, powdery q<gamma>X forces (i1m products) generated from the monon run are present.

[Disclosure of the Invention] The present invention provides a thin film manufacturing apparatus δ which can form a film at high speed, is easy to operate, and has good workability.

Hereinafter, one example of the present invention will be described in detail using the drawings. FIG. 1 is a conceptual diagram of a thin film manufacturing apparatus obtained by the present invention. 1 is a film forming chamber, 2 is a heater for heating the substrate, 3 is a heater for guard heating, 4 is a guard,
5 is a cathode. The example shown in FIG. 1 shows a method of heating the guard with an electric heater.

In FIG. 1, the deposition of powder is prevented by heating only the parts where powder is likely to accumulate. In addition, it is effective to heat the chamber and the like.

As a heating method, an electrical method such as an electrical heating method, a radiation method using a lamp or the like, or heating by passing a high temperature fluid or the like can be used.

The effects of the present invention are particularly significant when forming a film over a long period of time on a long tape-shaped substrate or when producing in large quantities. FIG. 2 shows that film formation on continuous long substrates using the roll-to-roll method becomes possible over a long period of time.

This type of method requires continuous operation for about 1 hour or more to form a film on one roll of a long substrate in one go. When silane gas is used without heating components outside the substrate in the chamber and without diluting it as in the past, a large amount of powdery substances are generated, and moreover, powdery substances are generated as the long substrate moves. But stirring 11! There is harm such as being exposed to

Figure 3 is a cross-sectional view of the chashibar, showing one of its heating methods.
This is an example, and an energizing heater is bonded to the back side of the partition wall. The heater can be routed through a variety of routes, such as those commonly used in known heating applications. Although there is no problem with the joint part 15 of the heater inside the partition wall, in consideration of ease of cleaning, etc., a structure as shown in FIG. 3 is preferable.

FIG. 4 shows the arrangement of heaters for heating the cathode. A cathode is connected to this second part.

[Example] Using pure/run with an apparatus having the configuration shown in FIG. 1, RF power 200M71 run LN, amount + ooSCCM, substrate temperature 250°C, pressure 0, I Tor r1. Guard part was heated to 200M71 with the heater according to the present invention. A film was formed by heating to 'C.

The results obtained are shown in Tables 1 and 2. Table 1 shows the results of measuring the thickness of the dust layer attached to the side surface of the cathode electrode, and it was found that the thickness was significantly reduced by the present invention. This is because the cathode electrode was heated by one heater, which turned it into a powder-like and film-like form, resulting in a decrease in layer thickness. In addition, □δph/δda-rk in Table 1 represents the amorphous silicon film formed on the substrate, and is written as (a-8j) below.
It represents the electrical 'IM' property of the thin film, and δI)h/δd
It can be seen that a r k has become larger.

Table 1 This is because the powdery substances scattered from the lower cathode electrode during the film formation process of the A-8I film on the substrate were not (tI). As a result of film formation under the same conditions as above, in the conventional method, dust adhered to the cathode and breakdown occurred during the day and night, so the equipment had to be stopped, but with the present invention, continuous operation for 5 days is possible. became.

[Brief explanation of drawings]

Figure 1 shows an apparatus for manufacturing the a-8i thin film obtained according to the present invention, and Figure 2 shows a long tape being connected to a substrate by rolling it.
A-8i thin film using two-roll method. It is a film forming device. FIG. 3 is a sectional view of the chamber obtained by the present invention, and FIG. 4 is a view of the guard seen from the back side. 1: Chamber for formation P+'A, 2: Heater for substrate heating, 3: Heater for guard heating, 4: Guard, 5:
Substrate, 6: High frequency power supply, 7: Cathode, 8 Near node,
9: Long tape-shaped substrate, medium 1 Fig. 2 Fig. 3 Fig. 1 1,4 Fig. 1, Indication of the case 1982 Patent Application No. 37485 2, Name of the invention Thin film manufacturing apparatus 3, Make amendments Relationship with the Patent Case Patent Applicant Address 5-15 Kitahama, Higashi-ku, Osaka 11i Name (2
+3) President of Sumitomo Electric Industries, Ltd. Tetsube 4, Agent address: 5, Sumitomo Electric Industries, Ltd., 1-1 @3, Shimaya, Konohana-ku, Osaka, Date of amendment order: Voluntary amendment 6, Specification subject to amendment 0) Detailed Description of the Invention Column 7, Contents of Amendment 0) "8μ" and "16" in Table 1, page 5, line 14 of the specification.
μ” and “24μ” are corrected to r8mmJ, r16mmJ, and r24mmJ, respectively.

Claims (2)

[Claims] (1) A thin film manufacturing apparatus characterized by having a mechanism capable of heating one or more of an anode part, a cathode part, a chamber wall part, and other parts in the chamber in a film forming chamber of the thin film manufacturing apparatus using glow discharge. (2) The thin film manufacturing apparatus according to item 1 of the scope of patent application i11, characterized in that the heating method is electrical heating or a method using +Q fluid.