JPS6018070A - 二次元画像読取素子 - Google Patents

二次元画像読取素子

Info

Publication number
JPS6018070A
JPS6018070A JP58126317A JP12631783A JPS6018070A JP S6018070 A JPS6018070 A JP S6018070A JP 58126317 A JP58126317 A JP 58126317A JP 12631783 A JP12631783 A JP 12631783A JP S6018070 A JPS6018070 A JP S6018070A
Authority
JP
Japan
Prior art keywords
electrode
electrodes
mask
layer
striped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58126317A
Other languages
English (en)
Japanese (ja)
Inventor
Katsuji Okibayashi
沖林　勝司
Masataka Ito
政隆 伊藤
Shoshichi Kato
加藤　昭七
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP58126317A priority Critical patent/JPS6018070A/ja
Priority to US06/629,339 priority patent/US4641359A/en
Priority to GB08417599A priority patent/GB2143676B/en
Priority to DE19843425360 priority patent/DE3425360A1/de
Publication of JPS6018070A publication Critical patent/JPS6018070A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP58126317A 1983-07-11 1983-07-11 二次元画像読取素子 Pending JPS6018070A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58126317A JPS6018070A (ja) 1983-07-11 1983-07-11 二次元画像読取素子
US06/629,339 US4641359A (en) 1983-07-11 1984-07-10 Two-dimensional image read-out device
GB08417599A GB2143676B (en) 1983-07-11 1984-07-10 Two-dimensional image read-out device
DE19843425360 DE3425360A1 (de) 1983-07-11 1984-07-10 Zweidimensionale bildauslesevorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58126317A JPS6018070A (ja) 1983-07-11 1983-07-11 二次元画像読取素子

Publications (1)

Publication Number Publication Date
JPS6018070A true JPS6018070A (ja) 1985-01-30

Family

ID=14932191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58126317A Pending JPS6018070A (ja) 1983-07-11 1983-07-11 二次元画像読取素子

Country Status (4)

Country Link
US (1) US4641359A (https=)
JP (1) JPS6018070A (https=)
DE (1) DE3425360A1 (https=)
GB (1) GB2143676B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62166563A (ja) * 1986-01-20 1987-07-23 Nec Corp 固体撮像素子

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60113587A (ja) * 1983-11-24 1985-06-20 Sharp Corp ２次元画像読取装置
JP2890553B2 (ja) * 1989-11-24 1999-05-17 株式会社島津製作所 Ｘ線像撮像装置
JPH03209769A (ja) * 1990-01-11 1991-09-12 Mitsubishi Electric Corp 赤外線イメージセンサ
US5391868A (en) * 1993-03-09 1995-02-21 Santa Barbara Research Center Low power serial bias photoconductive detectors
US7816655B1 (en) * 2004-05-21 2010-10-19 Kla-Tencor Technologies Corporation Reflective electron patterning device and method of using same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144992A (en) * 1976-05-28 1977-12-02 Hitachi Ltd Light receiving element
US4247874A (en) * 1978-09-28 1981-01-27 Northern Telecom Limited Photoconductor device for imaging a linear object
FR2464563A1 (fr) * 1979-08-31 1981-03-06 Thomson Csf Dispositif photodetecteur a semi-conducteur et procede de fabrication, et analyseur d'image comportant un tel dispositif
JPS5793775A (en) * 1980-12-04 1982-06-10 Fuji Xerox Co Ltd One-dimensional scanner

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62166563A (ja) * 1986-01-20 1987-07-23 Nec Corp 固体撮像素子

Also Published As

Publication number Publication date
DE3425360C2 (https=) 1988-02-04
DE3425360A1 (de) 1985-01-31
GB2143676A (en) 1985-02-13
GB8417599D0 (en) 1984-08-15
US4641359A (en) 1987-02-03
GB2143676B (en) 1987-02-25

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