JPS60180347A - アバランシエフオトダイオ−ドの温度補償回路 - Google Patents

アバランシエフオトダイオ−ドの温度補償回路

Info

Publication number
JPS60180347A
JPS60180347A JP59036753A JP3675384A JPS60180347A JP S60180347 A JPS60180347 A JP S60180347A JP 59036753 A JP59036753 A JP 59036753A JP 3675384 A JP3675384 A JP 3675384A JP S60180347 A JPS60180347 A JP S60180347A
Authority
JP
Japan
Prior art keywords
temperature
bias voltage
apd
voltage
multiplication factor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59036753A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0314244B2 (cs
Inventor
Hiroyuki Ishikawa
浩之 石川
Kazuto Takagi
高城　一人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59036753A priority Critical patent/JPS60180347A/ja
Publication of JPS60180347A publication Critical patent/JPS60180347A/ja
Publication of JPH0314244B2 publication Critical patent/JPH0314244B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/69—Electrical arrangements in the receiver
    • H04B10/691—Arrangements for optimizing the photodetector in the receiver
    • H04B10/6911—Photodiode bias control, e.g. for compensating temperature variations

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Optical Communication System (AREA)
JP59036753A 1984-02-28 1984-02-28 アバランシエフオトダイオ−ドの温度補償回路 Granted JPS60180347A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59036753A JPS60180347A (ja) 1984-02-28 1984-02-28 アバランシエフオトダイオ−ドの温度補償回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59036753A JPS60180347A (ja) 1984-02-28 1984-02-28 アバランシエフオトダイオ−ドの温度補償回路

Publications (2)

Publication Number Publication Date
JPS60180347A true JPS60180347A (ja) 1985-09-14
JPH0314244B2 JPH0314244B2 (cs) 1991-02-26

Family

ID=12478494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59036753A Granted JPS60180347A (ja) 1984-02-28 1984-02-28 アバランシエフオトダイオ−ドの温度補償回路

Country Status (1)

Country Link
JP (1) JPS60180347A (cs)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422122A (en) * 1987-07-17 1989-01-25 Fujitsu Ltd Light reception circuit
US5578815A (en) * 1993-07-09 1996-11-26 Hamamatsu Photonics K.K. Bias circuit for maintaining a constant potential difference between respective terminals of more than one avalanche photodiode
US7427741B2 (en) 2006-12-11 2008-09-23 Fujitsu Limited Bias control apparatus for avalanche photodiode and optical apparatus utilizing the bias control apparatus
WO2020121855A1 (ja) * 2018-12-12 2020-06-18 浜松ホトニクス株式会社 決定方法、及び光検出装置
US11513002B2 (en) 2018-12-12 2022-11-29 Hamamatsu Photonics K.K. Light detection device having temperature compensated gain in avalanche photodiode
US11901379B2 (en) 2018-12-12 2024-02-13 Hamamatsu Photonics K.K. Photodetector
US12080822B2 (en) 2018-12-12 2024-09-03 Hamamatsu Photonics K.K. Photodetector and method for manufacturing photodetector
US12113088B2 (en) 2018-12-12 2024-10-08 Hamamatsu Photonics K.K. Light detection device
US12322744B2 (en) 2018-12-12 2025-06-03 Hamamatsu Photonics K.K. Photodetector and method for manufacturing photodetector

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422122A (en) * 1987-07-17 1989-01-25 Fujitsu Ltd Light reception circuit
US5578815A (en) * 1993-07-09 1996-11-26 Hamamatsu Photonics K.K. Bias circuit for maintaining a constant potential difference between respective terminals of more than one avalanche photodiode
EP0633517A3 (en) * 1993-07-09 1996-11-27 Hamamatsu Photonics Kk Polarization circuit for avalanche photodiode.
US7427741B2 (en) 2006-12-11 2008-09-23 Fujitsu Limited Bias control apparatus for avalanche photodiode and optical apparatus utilizing the bias control apparatus
WO2020121855A1 (ja) * 2018-12-12 2020-06-18 浜松ホトニクス株式会社 決定方法、及び光検出装置
JP2020096170A (ja) * 2018-12-12 2020-06-18 浜松ホトニクス株式会社 決定方法、及び光検出装置
US11513002B2 (en) 2018-12-12 2022-11-29 Hamamatsu Photonics K.K. Light detection device having temperature compensated gain in avalanche photodiode
US11561131B2 (en) 2018-12-12 2023-01-24 Hamamatsu Photonics K.K. Determination method and light detection device
US11901379B2 (en) 2018-12-12 2024-02-13 Hamamatsu Photonics K.K. Photodetector
US11927478B2 (en) 2018-12-12 2024-03-12 Hamamatsu Photonics K.K. Light detection device
US12080822B2 (en) 2018-12-12 2024-09-03 Hamamatsu Photonics K.K. Photodetector and method for manufacturing photodetector
US12113088B2 (en) 2018-12-12 2024-10-08 Hamamatsu Photonics K.K. Light detection device
US12322744B2 (en) 2018-12-12 2025-06-03 Hamamatsu Photonics K.K. Photodetector and method for manufacturing photodetector

Also Published As

Publication number Publication date
JPH0314244B2 (cs) 1991-02-26

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