JPS60180347A - Temperature compensating circuit of avalanche photo diode - Google Patents
Temperature compensating circuit of avalanche photo diodeInfo
- Publication number
- JPS60180347A JPS60180347A JP59036753A JP3675384A JPS60180347A JP S60180347 A JPS60180347 A JP S60180347A JP 59036753 A JP59036753 A JP 59036753A JP 3675384 A JP3675384 A JP 3675384A JP S60180347 A JPS60180347 A JP S60180347A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- bias voltage
- apd
- voltage
- multiplication factor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/691—Arrangements for optimizing the photodetector in the receiver
- H04B10/6911—Photodiode bias control, e.g. for compensating temperature variations
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Optical Communication System (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明はＡＰＤ （アバランシェフォトダイオード：
Ａｖａｌａｎｃｈｅ Ｐｈｏｔｏ Ｄｉｏｄｅ）の温度
特性を補償する°）じ暮み値す滋書−路に関ｆる。Detailed Description of the Invention (a) Technical Field of the Invention The present invention relates to an APD (avalanche photodiode).
Compensating for the temperature characteristics of the Avalanche Photo Diode).
（ｂ） 従来技術と問題点
受光素子としてＡＰＤを用いた光受信回路においては、
温度変化によるＡＰＤの増倍率の変動を防止する必要が
ある。その一手段として、ＡＰＤからの信号を増幅する
増幅器の出力電圧を一定とするように帰還系を通して、
ＡＰＤのバイアス電圧を制御して供給する方法がある。(b) Prior art and problems In an optical receiving circuit using an APD as a light receiving element,
It is necessary to prevent fluctuations in the APD multiplication factor due to temperature changes. One way to do this is to pass the signal from the APD through a feedback system so that the output voltage of the amplifier that amplifies it is constant.
There is a method of controlling and supplying the bias voltage of the APD.
しかしこの方法は、帰還系が在るため応答速度が遅い欠
点を有する。この他の手段としてｌｄ、ＡＰＤへの供給
バイアス電圧を増幅する増幅器の入力電圧を、サーミス
タを用いて調節し、温度特性を補償する方法がある。こ
れを図によって説明する。第１図は従来方式を説明する
回路図である。第１図におけるＡＰＤ １が光りを受光
することによシ検出信号りが得られるが、そのバイアス
電圧ｖＢはバイアス回路２′ｆ：経て、アンプ３から供
給される。ここで絶対温度Ｔにおける第１図のＡＰＤ
１の増倍率Ｍは近似的に次式で表わせる。However, this method has the disadvantage of slow response speed due to the presence of a feedback system. Another method is to use a thermistor to adjust the input voltage of an amplifier that amplifies the bias voltage supplied to the LD and APD to compensate for the temperature characteristics. This will be explained using a diagram. FIG. 1 is a circuit diagram illustrating a conventional system. When the APD 1 in FIG. 1 receives light, a detection signal is obtained, and its bias voltage vB is supplied from the amplifier 3 via the bias circuit 2'f. Here, the APD of Fig. 1 at absolute temperature T
The multiplication factor M of 1 can be approximately expressed by the following equation.
ただし、Ｋ＋ ＋ Ｋ２ ＋ ｎ ｔｒｉ ＡＰ Ｄの
特性からめられる定数、またｖｎｎけＡＰ’Ｄのブレー
クダウン電圧で、これは絶対温度Ｔにより変化し次式で
示される。However, K+ + K2 + n tri is a constant determined from the characteristics of AP'D, and is a breakdown voltage of vnn times AP'D, which changes depending on the absolute temperature T and is expressed by the following equation.
但ＬαはＡ、ＰＤのブレークダウン電圧ＶＲＤの温度係
数である。（１）式より、ＡＰＤＯ増倍率Ｍを温度ＴＫ
対し一定とするには、ＶＢＤ（Ｔ） ”ＶＢ（Ｔ）とす
ればよい。第１図の従来回路では、アンプ３の入力側に
サーミスタＲ８を設けて、温度変化に応じてアンプ３の
出力電圧Ｖ、が変動し、これに能いＡＰＩ）１に供給さ
れるバイアス電圧ｖＢが調節されて温度変化に対する補
ｆｉが行われる。然るに、ＡＰＤのブレークダウン電圧
には個体差があり、（２）式のＶＢＤ（２９８）には種
々の値のものがある。この個体差に対して、ＶＢをそれ
ぞれ調整してやらねばならない。第１図の従来回路では
、アンプ３の入力側のＶｌを調整することによ、り 、
Ｖｎの異なるＡＰ、Ｄに対して、増倍率Ｍが一定値とな
るようにしている。However, Lα is the temperature coefficient of the breakdown voltage VRD of A and PD. From equation (1), APDO multiplication factor M is determined by temperature TK
On the other hand, to keep it constant, VBD(T) "VB(T) should be used. In the conventional circuit shown in FIG. The voltage V varies, and the bias voltage vB supplied to API)1 is adjusted to compensate for temperature changes.However, there are individual differences in the breakdown voltage of APDs, and ) has various values for VBD (298). VB must be adjusted for each individual difference. In the conventional circuit shown in Fig. 1, Vl on the input side of amplifier 3 is adjusted. By the way,
The multiplication factor M is set to be a constant value for AP and D having different Vn.
すなわち、入力電圧Ｖ、によって、ＶＢＤ（２９８）の
異ｅるＡＰＤに対しテＶＢ （２９８） ／ ＶＢＤ（
２９８） カある一定値になるように調整し、サーミス
タＲ８によって入力側の電圧Ｖｓが温度変化に従って変
化し、ＶＢＤ （Ｔ）の変化に従って、ＶＢ（Ｔ）がＶ
Ｂ （Ｔ）／ ＶＢＤ （Ｔ）が一定値を保つように変
化するようにしている。しかしながら、ＶＢＤ （Ｔ）
の温度変化の傾＠は、第２図（ａ）のようにＶＥＤ（２
９８）の値によって種々異なるのに対して、ＶＢ（Ｔ）
の温度変化の傾きは、サーミスタＲ８によって変化する
アンプ３の入力側の電圧Ｖｓの温度変化によって定まる
傾きとなり、たとえば第２図（ａ）のｚ２のＡＰＤの傾
きθ２にあわせると、第２図（ｂ）のようになる。従っ
て、ＶＢＤ （２９８）の個体差によッテ、Ｖｅ （Ｔ
）／ ＶＢＤ（Ｔ） 力変化し１．増倍率Ｍの温度変化
は、第２図（ｃ）のようになり、ブレークダウン電圧の
個体差の著しいＡＰＤに対しては、第１図に示す温度補
償回路では、その相異を補償しきれない欠点があった。That is, depending on the input voltage V, for different APDs of VBD(298), VB(298)/VBD(
298) Thermistor R8 adjusts the input voltage Vs to a certain constant value, and as VBD (T) changes, VB (T) changes to V
B (T)/VBD (T) is changed so as to maintain a constant value. However, VBD (T)
The slope of temperature change @ is VED(2) as shown in Figure 2(a).
98), while VB(T)
The slope of the temperature change is determined by the temperature change of the voltage Vs on the input side of the amplifier 3, which is changed by the thermistor R8. For example, when matched with the slope θ2 of APD of z2 in FIG. b) Therefore, depending on the individual difference in VBD (298), Ve (T
)/VBD(T) Force changes 1. The temperature change in the multiplication factor M is as shown in Figure 2 (c), and for APDs with significant individual differences in breakdown voltage, the temperature compensation circuit shown in Figure 1 cannot fully compensate for the differences. There were no drawbacks.
（ｃ） 発明の目的
本発明は上記の欠点を解決するためになされた提供を目
的とする。(c) Object of the invention The present invention aims to provide an solution to the above-mentioned drawbacks.
（ｄ） 発明の構成
本発明は、電子増倍率が温度特性を呈するアバランシエ
フ埼トダイオードと、該アバランシェフォトダイオード
用のバイアス電圧を供給する手段とを有する回路におい
て、ブレークダウン電圧Ｖｌｌ＋）の畳なるＡＰＤ Ｋ
：対して、増倍率Ｍが一定値になるようにバイアス電圧
Ｖｎを調整することにより、同時にＶＲＩ３の温度変化
の傾きに対してバイアス電圧ＶＢの温度変化の傾きが調
節されて、′異なる特性を呈するＡＰＤ′ｆ！：用いて
も、温度による電子増倍率の変動を僅少とするように図
ったものである。(d) Structure of the Invention The present invention provides a circuit including an avalanche photodiode whose electron multiplication factor exhibits temperature characteristics and means for supplying a bias voltage for the avalanche photodiode, in which the breakdown voltage Vll+) is APDK
:On the other hand, by adjusting the bias voltage Vn so that the multiplication factor M becomes a constant value, the slope of the temperature change of the bias voltage VB is simultaneously adjusted with respect to the slope of the temperature change of the VRI3, resulting in different characteristics. APD′f! : Even when used, the electron multiplication factor is designed to have little variation due to temperature.
（ｅ） 発明の実７Ｉｆｌｉ例
以下、本発明を図面によって説明する。第３図は本発明
の一実施例全説明する回路図である。第３図におけるＡ
ＰＩ）１に対するバイアス電圧ｖＢはバイアス回路５か
ら供給きれる。アンプ４の入力側にサーミスタＲ８と、
これに直列の抵抗Ｒ７を設け、またアンプ４に帰還用の
抵抗Ｒ２を設けたものである。この第３図の入力端子Ｐ
Ｋｉ圧ＶＩを与えたとき、出力端子Ｑの電圧■、は、絶
対温度Ｔに対して近似的に次式の如き関数となるＯＶ
２（Ｔ） −（ＡＴ ＋ Ｂ）Ｖ＋ ’ −−−−−（
３）−上記（３）式の定数Ａ及びＢは以下のようにして
められる。(e) 7 Ifli Examples of the Invention The present invention will be explained below with reference to the drawings. FIG. 3 is a circuit diagram completely illustrating one embodiment of the present invention. A in Figure 3
The bias voltage vB for PI) 1 can be supplied from the bias circuit 5. Thermistor R8 is installed on the input side of amplifier 4,
A resistor R7 is provided in series with this, and the amplifier 4 is provided with a feedback resistor R2. Input terminal P in this figure 3
When the Ki pressure VI is applied, the voltage at the output terminal Q, OV, is approximately a function of the following equation with respect to the absolute temperature T.
2(T) −(AT + B)V+ ' −−−−−(
3)-The constants A and B in the above equation (3) can be determined as follows.
（４）式におけるＧはアンプ４の利得である。またＲｓ
（Ｔ）Ｉ′ｉ絶対温度ＴにおけるサーミスタＲ８の抵抗
値であシ、これは次式で表わせる。G in equation (4) is the gain of the amplifier 4. Also Rs.
(T)I'i is the resistance value of the thermistor R8 at the absolute temperature T, which can be expressed by the following equation.
なおＦはサーミスタＲ８の温度係数である。（４）式に
対して直線的に変化するように抵抗Ｒ１の値を決定する
と、近似的に
の如く表わせる。従って電圧ｖ２は、
となり、前記（３）式における定数Ａ及びＢはＡ＝ａＧ
Ｒ４
となる。第３図における出力端子Ｑの電圧Ｖ２はバイア
ス回路２により高電圧て変換されてバイアス電圧ＶＢと
なるが、これは次式で表わせる。Note that F is the temperature coefficient of the thermistor R8. If the value of the resistor R1 is determined so as to vary linearly with respect to equation (4), it can be approximately expressed as shown below. Therefore, the voltage v2 is as follows, and the constants A and B in the above equation (3) are A=aG
It becomes R4. The voltage V2 at the output terminal Q in FIG. 3 is converted to a high voltage by the bias circuit 2 to become the bias voltage VB, which can be expressed by the following equation.
ＶＢ（Ｔ） −Ｖ ２ （Ｔ） Ｘ Ｃ＝ＣＣＡＴ十Ｂ
）Ｖｌ −−（８）
なおＣは定数である。一方、第３図におけるＡＰＩ）１
の増倍率Ｍは、前記（１）式とな９、ＡＰＤＯ増倍率Ｍ
を温度Ｔに対し一定とするためには、■ＢＤ（Ｔ）”Ｖ
Ｂ（Ｔ） となればよいｏ−ｃ’、前記（８）及び（２
）式ｒｃヨ９、（３）式の定数Ａ及びＢと、（８）式の
定数Ｃ〃ｓ決定される。前記（８）式及び（２）式とに
より、ＡＰＤｌのバイアス電圧ＶＢの温度特性は、第４
図の如く得られる。なおパラメータは、ブレークダウン
電圧ｖＢＤ（１３０ホルト、１６０ホルト、１８０ホル
ト）テある。第４図において温度が５℃〜３５℃の範囲
ではその特性は殆ど直線性が保たれる○しかもそれぞれ
のパラメータによって、その傾斜角（θ）が異なる。第
５図は第４図の特性をや＼強調したものである０ＡＰＤ
のブレークダウン電圧ｖＢの温度変化は、図（２） ａ
Ｉｃ 示ｆ ヨうになシ、Ｚ＋ 、 Ｚ２ 、 Ｚｓ
ノ温度変化の傾きはそれぞれθ１．θ２．θ３となる。VB(T) −V 2 (T) X C=CCAT1B
)Vl --(8) Note that C is a constant. On the other hand, API) 1 in Figure 3
The multiplication factor M is given by the equation (1) above.9, APDO multiplication factor M
In order to keep constant with respect to temperature T, ■BD(T)”V
B(T) oc', the above (8) and (2
) Equation rcY9, constants A and B in equation (3), and constant C〃s in equation (8) are determined. According to the above equations (8) and (2), the temperature characteristic of the bias voltage VB of APDl is expressed as the fourth
Obtained as shown in the figure. The parameters include breakdown voltage vBD (130 holts, 160 holts, 180 holts). In FIG. 4, in the temperature range of 5 DEG C. to 35 DEG C., the characteristics maintain almost linearity.Moreover, the angle of inclination (.theta.) differs depending on each parameter. Figure 5 shows 0APD, which emphasizes the characteristics of Figure 4.
The temperature change in the breakdown voltage vB of is shown in Figure (2) a
Ic
The slope of the temperature change is θ1. θ2. It becomes θ3.
このように使用するＡＰＤの特性が異なる場合、ｚｌの
如き％注の場合には、第４図（又は第５図）における角
度θ、を有する直線Ｈの温度特性のバイアス電圧Ｖ’Ｂ
、ｋ ＡＰＤ １に供給し、一方２．の如き特性の場
合には角度θ３を有する直線Ｊの温度特性のバイアス電
圧ＶＢを、ＡＰＤｌに供給することによシ、その増倍率
Ｍの温度特性を、第６図に示す如く平担化することが可
能となる。When the characteristics of the APDs used are different in this way, in the case of %Note such as zl, the bias voltage V'B of the temperature characteristic of the straight line H having the angle θ in FIG. 4 (or FIG. 5)
, k APD 1, while 2. In the case of such a characteristic, by supplying the bias voltage VB of the temperature characteristic of the straight line J having the angle θ3 to the APD1, the temperature characteristic of the multiplication factor M is flattened as shown in FIG. becomes possible.
（ｆ＞ 発明の効果
以上のように本発明は、ＡＰＤの特性のバラツキに対し
て容易に温度補償しうる利点を有する０(f> Effects of the Invention As described above, the present invention has the advantage of easily temperature-compensating for variations in APD characteristics.
第１図は従来方式を説明する回路図、第２図（ａ）はＡ
ＰＤのブレークダウン電圧の温度特性図、（ｂ）は従来
方式によるバイアス電圧の温度特性図、（Ｃ）は従来方
式による増倍率の温度特性図、第３図は本発明の一実施
例を説明する回路図、第４図は本発明の場合のＡＰＤの
バイアス電圧ＶＢの温度特性図、第５図は第４図の簡略
図、第６図はＡＰＤＯ増倍率Ｍの補償効果を説明する温
度特性図であり、図中に用いた符号は次の通シである。
ＩＪ−ｊＡＰＤ（アバランシェ・フォトダイオード）、
２はバイアス回路、３，４はアンプ、Ｄは検出信号、Ｈ
，Ｉ、Ｊはバイアス電圧ｖＢの温度特性（計算値）、Ｇ
はアンプの利得、Ｌは光、Ｐは入力端子、Ｑは出力端子
、Ｒ，、Ｒ２，Ｒ，は抵抗、Ｒ８はサーミスタ、ｔｉｔ
温度、ｖ、 ｌ Ｖｌ ＋ ｖｓは電圧、ｖｎはバイア
ス電圧、θ１．θ２．θ３は温度特性を示す傾斜角を示
す。
第１ 口
ｃＣ
斗 ２ 口
（（２）
５Ｂケズー
（わ）
５戦生 ニー
（Ｃ）
、１
界ぼ
２
茎４ 目
□を
茅５ 図
□Ｊ
第６ 口
□χFigure 1 is a circuit diagram explaining the conventional method, Figure 2 (a) is A
A temperature characteristic diagram of the breakdown voltage of a PD, (b) a temperature characteristic diagram of the bias voltage according to the conventional method, (C) a temperature characteristic diagram of the multiplication factor according to the conventional method, and FIG. 3 explains one embodiment of the present invention. 4 is a temperature characteristic diagram of the APD bias voltage VB in the case of the present invention, FIG. 5 is a simplified diagram of FIG. 4, and FIG. 6 is a temperature characteristic diagram explaining the compensation effect of the APDO multiplication factor M. The reference numerals used in the figure are as follows. IJ-jAPD (avalanche photodiode),
2 is a bias circuit, 3 and 4 are amplifiers, D is a detection signal, H
, I, J are temperature characteristics (calculated values) of bias voltage vB, G
is the gain of the amplifier, L is the light, P is the input terminal, Q is the output terminal, R,, R2, R, are the resistors, R8 is the thermistor, tit
temperature, v, l Vl + vs is voltage, vn is bias voltage, θ1. θ2. θ3 indicates an angle of inclination indicating temperature characteristics. 1st Mouth cC Dou 2 Mouth ((2) 5B Kezu (wa) 5 Senshu Knee (C), 1 Kaibo 2 Stalk 4 Eye □ to Chi 5 Figure □J 6th Mouth □χ
Claims (1)
イオードと、該アバランシェフォトダイオードのバイア
ス電圧を供給する手段とを有する回路において、温度変
化に伴いバイアス電圧をり：化させる手段と、ブレーク
ダウン電圧の異なるアバランシェフォトダイオードに対
して増倍率が特定の値となるようにバイアス電圧を調整
しバイアス電圧の温度変化の傾きをブレークダウン電圧
の温度変化の傾きと一致するように調整する手段を設け
たことを特徴とするアバランシェフォトダイオードの温
度ネｍ償回路。In a circuit including an avalanche photodiode whose electron multiplication factor changes according to temperature, and means for supplying a bias voltage to the avalanche photodiode, the circuit includes a means for changing the bias voltage as the temperature changes, and a breakdown voltage of the avalanche photodiode. A means is provided for adjusting the bias voltage so that the multiplication factor becomes a specific value for different avalanche photodiodes, and adjusting the slope of the temperature change of the bias voltage to match the slope of the temperature change of the breakdown voltage. A temperature compensation circuit for an avalanche photodiode characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59036753A JPS60180347A (en) | 1984-02-28 | 1984-02-28 | Temperature compensating circuit of avalanche photo diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59036753A JPS60180347A (en) | 1984-02-28 | 1984-02-28 | Temperature compensating circuit of avalanche photo diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60180347A true JPS60180347A (en) | 1985-09-14 |
| JPH0314244B2 JPH0314244B2 (en) | 1991-02-26 |
Family
ID=12478494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59036753A Granted JPS60180347A (en) | 1984-02-28 | 1984-02-28 | Temperature compensating circuit of avalanche photo diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60180347A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6422122A (en) * | 1987-07-17 | 1989-01-25 | Fujitsu Ltd | Light reception circuit |
| EP0633517A2 (en) * | 1993-07-09 | 1995-01-11 | Hamamatsu Photonics K.K. | Bias circuit for avalanche photodiode |
| US7427741B2 (en) | 2006-12-11 | 2008-09-23 | Fujitsu Limited | Bias control apparatus for avalanche photodiode and optical apparatus utilizing the bias control apparatus |
| JP2020096170A (en) * | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | Determination method and light detection device |
| US11513002B2 (en) | 2018-12-12 | 2022-11-29 | Hamamatsu Photonics K.K. | Light detection device having temperature compensated gain in avalanche photodiode |
| US11901379B2 (en) | 2018-12-12 | 2024-02-13 | Hamamatsu Photonics K.K. | Photodetector |
| US12080822B2 (en) | 2018-12-12 | 2024-09-03 | Hamamatsu Photonics K.K. | Photodetector and method for manufacturing photodetector |
| US12113088B2 (en) | 2018-12-12 | 2024-10-08 | Hamamatsu Photonics K.K. | Light detection device |
-
1984
- 1984-02-28 JP JP59036753A patent/JPS60180347A/en active Granted
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6422122A (en) * | 1987-07-17 | 1989-01-25 | Fujitsu Ltd | Light reception circuit |
| EP0633517A2 (en) * | 1993-07-09 | 1995-01-11 | Hamamatsu Photonics K.K. | Bias circuit for avalanche photodiode |
| US5578815A (en) * | 1993-07-09 | 1996-11-26 | Hamamatsu Photonics K.K. | Bias circuit for maintaining a constant potential difference between respective terminals of more than one avalanche photodiode |
| EP0633517A3 (en) * | 1993-07-09 | 1996-11-27 | Hamamatsu Photonics Kk | Bias circuit for avalanche photodiode. |
| US7427741B2 (en) | 2006-12-11 | 2008-09-23 | Fujitsu Limited | Bias control apparatus for avalanche photodiode and optical apparatus utilizing the bias control apparatus |
| JP2020096170A (en) * | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | Determination method and light detection device |
| WO2020121855A1 (en) * | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | Determination method and light detection device |
| US11513002B2 (en) | 2018-12-12 | 2022-11-29 | Hamamatsu Photonics K.K. | Light detection device having temperature compensated gain in avalanche photodiode |
| US11561131B2 (en) | 2018-12-12 | 2023-01-24 | Hamamatsu Photonics K.K. | Determination method and light detection device |
| US11901379B2 (en) | 2018-12-12 | 2024-02-13 | Hamamatsu Photonics K.K. | Photodetector |
| US11927478B2 (en) | 2018-12-12 | 2024-03-12 | Hamamatsu Photonics K.K. | Light detection device |
| US12080822B2 (en) | 2018-12-12 | 2024-09-03 | Hamamatsu Photonics K.K. | Photodetector and method for manufacturing photodetector |
| US12113088B2 (en) | 2018-12-12 | 2024-10-08 | Hamamatsu Photonics K.K. | Light detection device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0314244B2 (en) | 1991-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0633517B1 (en) | Bias circuit for avalanche photodiode | |
| EP0177166A2 (en) | Apparatus and circuitry for stablizing laser diode output for analog modulation | |
| JPS60180347A (en) | Temperature compensating circuit of avalanche photo diode | |
| US4088962A (en) | Self biasing differential amplifier | |
| CN108808437A (en) | A kind of driving circuit and the optical module using the driving circuit | |
| JP3999325B2 (en) | Photodetection circuit | |
| FR2737777A1 (en) | SENSOR MODULE | |
| EP1341276B1 (en) | Semiconductor laser module | |
| EP0504974B1 (en) | Electrical supply circuit, in particular for APDs | |
| JPS5995711A (en) | Driving circuit of avalanche photodiode | |
| JPH0315859B2 (en) | ||
| JPH03270504A (en) | Equivalent amplifier circuit for optical receiver | |
| US11280674B1 (en) | Differential trans-impedance amplifier receiver using counter-offset circuitry | |
| JP2621299B2 (en) | Optical receiver | |
| JP2536412B2 (en) | Optical AGC circuit | |
| JPS6014293B2 (en) | optical receiver circuit | |
| JPH05191355A (en) | Optical reception amplifier | |
| JPS6145420B2 (en) | ||
| JPS63108808A (en) | Preamplifier incorporating photodetector | |
| JPS61145424A (en) | Temperature measurement | |
| JPH04264807A (en) | Equivalent amplifier circuit with high-speed agc circuit | |
| JPH03195107A (en) | Preamplifier with automatic feedback resistance control function | |
| JPH05249128A (en) | Wind velocity sensor | |
| JPS6447109A (en) | Agc control system for optical reception circuit | |
| JPH0712131B2 (en) | Electronic volume circuit |