JPS63108808A - Preamplifier incorporating photodetector - Google Patents
Preamplifier incorporating photodetectorInfo
- Publication number
- JPS63108808A JPS63108808A JP25447986A JP25447986A JPS63108808A JP S63108808 A JPS63108808 A JP S63108808A JP 25447986 A JP25447986 A JP 25447986A JP 25447986 A JP25447986 A JP 25447986A JP S63108808 A JPS63108808 A JP S63108808A
- Authority
- JP
- Japan
- Prior art keywords
- preamplifier
- resistor
- amplifier
- photodetector
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009966 trimming Methods 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 description 9
- 230000036211 photosensitivity Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、光信号を電気信号に変換する光検知器を内
蔵したプリアンプＩＣに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a preamplifier IC incorporating a photodetector that converts an optical signal into an electrical signal.
従来の近赤外から赤外光まで（波長： ７００〜１００
０ｎａｔ）の光電変換システムの一例を第２図に示し、
図において、１は近赤外から赤外光までを効率よく電流
に変換するディスクリート部品としてのフォトダイオー
ド、２は負電源電圧端子である。、≦は上記光電流を電
圧に変換する増幅器、４は該増幅器３の帰還抵抗、５は
オフセット調整用に上記増幅器３の正相入力に接続され
た抵抗である。６は上記増幅器３で電流から電圧に変換
された信号をさらに増幅する増幅器、７は上記増幅器３
の出力と該増幅器６の反転入力間に接続された抵抗、８
は該増幅器６の帰還抵抗、９は該増幅器６の正相入力と
接地間に接続された抵抗、ｉ′０は出力端子である。From conventional near-infrared to infrared light (wavelength: 700-100
An example of a photoelectric conversion system (0nat) is shown in Figure 2.
In the figure, 1 is a photodiode as a discrete component that efficiently converts light from near-infrared light to infrared light into current, and 2 is a negative power supply voltage terminal. , ≦ is an amplifier that converts the photocurrent into a voltage, 4 is a feedback resistor of the amplifier 3, and 5 is a resistor connected to the positive phase input of the amplifier 3 for offset adjustment. 6 is an amplifier that further amplifies the signal converted from current to voltage by the amplifier 3; 7 is the amplifier 3;
a resistor 8 connected between the output of the amplifier 6 and the inverting input of the amplifier 6;
is a feedback resistor of the amplifier 6, 9 is a resistor connected between the positive phase input of the amplifier 6 and ground, and i'0 is an output terminal.
次に動作について説明する。Next, the operation will be explained.
フォトダイオードｌに入射された光信号は、これによっ
て増幅器３の反転端子から負電流電圧端子２の方向に流
れる電流に変換され、増幅器３゜帰還抵抗４．抵抗５に
より構成された電流電圧変換増幅器により電圧に変換さ
れる。ここで上記フォトダイオード１に入射された光量
をＬ （ｗ）、該フォトダイオード１の光感度をＡ （
ｍＡ／ｗ） 、フォトダイオード１で変換される電流を
■とすると、１−Ａ−Ｌ・１０弓〔Ａ〕で表わされる。The optical signal incident on the photodiode 1 is thereby converted into a current flowing from the inverting terminal of the amplifier 3 to the negative current voltage terminal 2, and is passed through the amplifier 3 and the feedback resistor 4. The current is converted into a voltage by a current-to-voltage conversion amplifier constituted by a resistor 5. Here, the amount of light incident on the photodiode 1 is L (w), and the photosensitivity of the photodiode 1 is A (
mA/w), and the current converted by the photodiode 1 is represented by 1-A-L·10 arc [A].
また、増幅器３の出力電圧をＶｔ（Ｖ）、上記帰還抵抗
４の抵抗値をＲｖ ＣｋΩ〕とすると、ｖＩ−Ｉ・Ｒｖ
・１０−’−Ａ−Ｌ−Ｒｖとなる。さらに、出力電圧
Ｖ、は増幅器６により増幅され、出力端子１０に電圧と
して出力される。該出力端子１０の出力電圧をＶゆ 〔
Ｖ〕、帰還抵抗８の抵抗値をＲｔ （ｋΩ〕、抵抗７
の抵抗値をＲｆ （ｋΩ〕とすると、
Ｖｏ ＝Ｒｔ ／Ｒ＋ −Ｖｔ −Ａ−Ｌ−Ｒｖ
−Ｒｔ ／Ｒ＋・・・（１）
と表わされる。ここで、出力Ｖ０の個々のバラツキを小
さくする為には、フォトダイオード１は個々の光感度の
バラツキの少ない部品３〜１０で構成されるプリアンプ
とは別の製造過程を経た、ディスクリート部品が用いら
れる。Further, if the output voltage of the amplifier 3 is Vt (V), and the resistance value of the feedback resistor 4 is Rv CkΩ], then vI-I・Rv
・10-'-A-L-Rv. Further, the output voltage V is amplified by the amplifier 6 and output as a voltage to the output terminal 10. The output voltage of the output terminal 10 is V
V], the resistance value of the feedback resistor 8 is Rt (kΩ), and the resistance value of the feedback resistor 8 is Rt (kΩ).
If the resistance value of is Rf (kΩ), then Vo = Rt /R+ -Vt -A-L-Rv
-Rt/R+...(1) It is expressed as. Here, in order to reduce the individual variations in the output V0, the photodiode 1 is a discrete component that has undergone a manufacturing process different from that of the preamplifier, which is composed of components 3 to 10 with little variation in individual photosensitivity. It will be done.
ところがフォトダイオードをプリアンプと別のディスク
リート部品で構成すると、フォトダイオードからプリア
ンプ間の配線にノイズが乗り、耐外来雑音特性が悪化す
る為、フォトダイオードとプリアンプを１チツプ上に搭
載して耐外来雑音特性を良くする必要がある。この際に
、フォトダイオードをプリアンプと同一製造過程で作ろ
うとすると、光感度がばらつき出力電圧のバラツキが大
きくなったり、あるいはフォトダイオードのバラツキを
抑えるような製造過程でプリアンプを作ると、チップサ
イズが大きくなったりするという問題点があった。However, if the photodiode is composed of a preamplifier and a separate discrete component, noise will be introduced into the wiring between the photodiode and the preamplifier, deteriorating the external noise resistance characteristics. It is necessary to improve the characteristics. At this time, if you try to make the photodiode in the same manufacturing process as the preamplifier, the photosensitivity will vary and the output voltage will vary widely, or if the preamplifier is made in a manufacturing process that suppresses photodiode variation, the chip size will increase. There was a problem with it getting bigger.
この発明は上記のような問題点を解消するためになされ
たもので、耐外来雑音特性に優れ、かつ光信号を変換し
て得られた電圧信号の個々のバラツキを抑えることがで
きる光検知器内蔵プリアンプを得ることを目的とする。This invention was made to solve the above-mentioned problems, and provides a photodetector that has excellent resistance to external noise and can suppress individual variations in voltage signals obtained by converting optical signals. The aim is to get a built-in preamplifier.
この発明に係る光検知器内蔵プリアンプは光検知器と、
電流電圧変換及び電圧増幅を行なうプリアンプとを１チ
ツプ上に構成し、プリアンプの利得を決めるその抵抗値
をトリミングにより調整した抵抗を設けたものである。A preamplifier with a built-in photodetector according to the present invention includes a photodetector,
A preamplifier that performs current-voltage conversion and voltage amplification is constructed on one chip, and a resistor whose resistance value, which determines the gain of the preamplifier, is adjusted by trimming is provided.
この発明においては、トリミングによりプリアンプの利
得を決める抵抗値を調整した抵抗を設けたから、光検知
器の光感度のバラツキによらず、プリアンプ出力電圧レ
ベルを一定に保つことができる。In this invention, since the resistor whose resistance value that determines the gain of the preamplifier is adjusted by trimming is provided, the preamplifier output voltage level can be kept constant regardless of variations in the photosensitivity of the photodetector.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例による光検知器内蔵プリアン
プを示し、図において、第２図と同一または相当部分は
同じ符号で示されており、１１はその一端が増幅器３の
出力に接続された抵抗、１２は該抵抗１１の他端と、増
幅器６の反転入力間に直列に接続されそれぞれその両端
が配線材料により短絡された抵抗素子であり、該抵抗素
子１２の配線材料を必要に応じてカット（トリミング）
することにより増幅器３の出力と増幅器６の反転入力間
に、上記抵抗１１と直列に所望の抵抗値をもつ抵抗が入
る構成となっている。また、ここでフォトダイオードｌ
と部品３〜１２で構成されるプリアンプとは同一チップ
上に作られている。このようなフォトダイオード内蔵プ
リアンプにおいては、プリアンプ部の集積度を上げる為
に、拡散の深さが浅く、濃度にも制限のある製造プロセ
スが必要になる為、フォトダイオード１の光感度のバラ
ツキが大きくなる。FIG. 1 shows a preamplifier with a built-in photodetector according to an embodiment of the present invention. In the figure, the same or corresponding parts as in FIG. The resistor 12 is a resistor element connected in series between the other end of the resistor 11 and the inverting input of the amplifier 6, both ends of which are short-circuited by a wiring material. Cut (Trim) accordingly
As a result, a resistor having a desired resistance value is inserted in series with the resistor 11 between the output of the amplifier 3 and the inverting input of the amplifier 6. Also, here the photodiode l
and a preamplifier made up of parts 3 to 12 are made on the same chip. In such a preamplifier with a built-in photodiode, in order to increase the degree of integration of the preamplifier section, a manufacturing process with a shallow diffusion depth and limited concentration is required, so variations in the photosensitivity of the photodiode 1 are reduced. growing.
次に作用１、効果について説明する。Next, action 1 and effects will be explained.
上記抵抗素子１２は、フォトダイオード１の光感度に応
じて１個または複数個の抵抗素子が選択され、トリミン
グによりその配線材料がカットされる。フォトダイオー
ド１の光感度の標準値をＡｔとし、抵抗１１の抵抗値を
Ｒｍ、選択され配線゛材料をカットされた抵抗素子１２
の、トータルの抵抗値をＲｔ、プリアンプ出力の電圧値
をＶｔとすると、（１）式より
Ｖｔ＝Ａｔ−Ｌ −Ｒｖ−Ｒｆ／ （Ｒｍ＋Ｒｔ）
・・・（２）と表わされる。ここで、フォト
ダイオード１のばらついた光感度をＡｃとし、その時の
抵抗素子１２のトータルの抵抗値をＲｃ ｓプリアンプ
出力の電圧値をＶｃとすると、（１）式よりｖｃはＶｃ
＝Ａｃ −Ｌ −Ｒｖ −Ｒｆ／（Ｒｍ＋Ｒｃ）
＝（３）となる、そこでプリアン
プ出力の電圧値を一定にする為には、（２）、 （３）
式より、Ａｃ／Ａｔ−（Ｒｍ ＋Ｒｃ）／（Ｒｍ ＋Ｒ
ｔ） ＝（４）を満たす抵抗値Ｒｅを
選択すればよい。One or more resistive elements are selected as the resistive element 12 according to the photosensitivity of the photodiode 1, and the wiring material thereof is cut by trimming. The standard value of the photosensitivity of the photodiode 1 is At, the resistance value of the resistor 11 is Rm, and the resistor element 12 whose wiring material is cut is selected.
If the total resistance value is Rt, and the voltage value of the preamplifier output is Vt, then from equation (1), Vt=At-L -Rv-Rf/ (Rm+Rt)
...It is expressed as (2). Here, if the varying photosensitivity of the photodiode 1 is Ac, the total resistance value of the resistance element 12 at that time is Rc, and the voltage value of the preamplifier output is Vc, then from equation (1), vc is Vc
=Ac −L −Rv −Rf/(Rm+Rc)
= (3), so in order to keep the voltage value of the preamplifier output constant, (2), (3)
From the formula, Ac/At-(Rm +Rc)/(Rm +R
It is sufficient to select a resistance value Re that satisfies t) = (4).
従ってフォトダイオード１の光感度のバラツキに対応し
た抵抗素子１２の抵抗群をあらかじめ設けておき、（４
）式を満たすようにトリミングにより抵抗値Ｒｃを決め
ることにより、プリアンプ出力のバラツキを抑えること
ができる。Therefore, a resistor group of the resistor element 12 corresponding to the variation in the photosensitivity of the photodiode 1 is provided in advance.
) By determining the resistance value Rc by trimming so as to satisfy the equation, variations in the preamplifier output can be suppressed.
なお、上記実施例では増幅器３，６間の抵抗値を調整す
ることによって増幅器６の利得を可変するようにしたが
、これはｔＫプリアンプの利得を可変できる手段であれ
ばよく、例えば抵抗８の抵抗値または、抵抗４の抵抗値
を調整するようにしてもよく、同様の効果を奏する。In the above embodiment, the gain of the amplifier 6 is varied by adjusting the resistance value between the amplifiers 3 and 6, but this may be any means that can vary the gain of the tK preamplifier, for example, by adjusting the resistance value of the resistor 8. The resistance value or the resistance value of the resistor 4 may be adjusted, and similar effects can be obtained.
また、上記実施例では、光電変換素子としてフォトダイ
オードを用いたが、これはフォトトランジスタ等のＰＮ
接合を用いた光検知器であればよく、上記実施例と同様
の効果を奏する。In addition, in the above embodiment, a photodiode was used as a photoelectric conversion element, but this is a PN such as a phototransistor.
Any photodetector using bonding may be used, and the same effects as in the above embodiment can be achieved.
また、説明を簡単にする為に、抵抗の絶対値。Also, to simplify the explanation, the absolute value of resistance.
抵抗比は一定であるとしたが、これらがばらつく場合で
も同様の効果を奏することはいうまでもない。Although the resistance ratio is assumed to be constant, it goes without saying that the same effect can be achieved even if the resistance ratio varies.
また上記実施例では抵抗素子１２のトータルの値を調整
する構成としたが、トータルの抵抗値が調整できるよう
設けられた抵抗群であればよく、また配線材料をカット
した場合についてのみ説明したが、抵抗そのものをトリ
ミングしたものでもよく、同様の効果を奏する。Further, in the above embodiment, the total value of the resistance element 12 is adjusted, but any resistor group provided so that the total resistance value can be adjusted may be used, and only the case where the wiring material is cut has been described. , the resistor itself may be trimmed, and the same effect can be achieved.
以上のように、この発明によればプリアンプの利得を決
めるその抵抗値をトリミングにより調整した抵抗を設け
たので、容易にプリアンプ出力レベルの個々のバラツキ
を抑えることができる光検知器内蔵プリアンプを得るこ
とができる。As described above, according to the present invention, since a resistor is provided whose resistance value, which determines the gain of the preamplifier, is adjusted by trimming, it is possible to obtain a preamplifier with a built-in photodetector that can easily suppress individual variations in the output level of the preamplifier. be able to.
第１図はこの発明の一実施例による光検知器内蔵プリア
ンプを示すブロック図、第２図は従来の光検知器内蔵プ
リアンプを示すブロック図である。
図において、１はフォトダイオード、２は負電流電圧端
子、３，６は増幅器、４．８は帰還抵抗、ｓ、９．１１
は抵抗、１０は出力端子、１２は抵抗素子である。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a block diagram showing a preamplifier with a built-in photodetector according to an embodiment of the present invention, and FIG. 2 is a block diagram showing a conventional preamplifier with a built-in photodetector. In the figure, 1 is a photodiode, 2 is a negative current voltage terminal, 3 and 6 are amplifiers, 4.8 is a feedback resistor, s, 9.11
is a resistor, 10 is an output terminal, and 12 is a resistance element. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (2)
換する光検知器及び該電流信号を増幅するプリアンプを
有する光検知器内蔵プリアンプにおいて、 該プリアンプの利得を決めるその抵抗値をトリミングに
より調整した抵抗を有することを特徴とする光検知器内
蔵プリアンプ。(1) In a preamplifier with a built-in photodetector that is mounted on the same chip and has a photodetector that converts an optical signal into a current signal and a preamplifier that amplifies the current signal, the resistance value that determines the gain of the preamplifier is trimmed. A preamplifier with a built-in photodetector characterized by having a tuned resistance.
複数の抵抗素子を有する抵抗回路の上記配線材料をトリ
ミングしてなるものであることを特徴とする特許請求の
範囲第１項記載の光検知器内蔵プリアンプ。(2) The light according to claim 1, wherein the resistor is formed by trimming the wiring material of a resistor circuit having a plurality of resistance elements whose both ends are short-circuited by a wiring material. Preamplifier with built-in detector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25447986A JPS63108808A (en) | 1986-10-24 | 1986-10-24 | Preamplifier incorporating photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25447986A JPS63108808A (en) | 1986-10-24 | 1986-10-24 | Preamplifier incorporating photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63108808A true JPS63108808A (en) | 1988-05-13 |
Family
ID=17265621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25447986A Pending JPS63108808A (en) | 1986-10-24 | 1986-10-24 | Preamplifier incorporating photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63108808A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01274736A (en) * | 1988-04-26 | 1989-11-02 | Canon Inc | Optical device equipped with visual point direction detecting device |
| US5610681A (en) * | 1992-10-31 | 1997-03-11 | Canon Kabushiki Kaisha | Optical eye-control apparatus |
| WO1997039486A1 (en) * | 1996-04-15 | 1997-10-23 | Rohm Co., Ltd. | Image sensor chip, method for manufacturing the same, and image sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59200511A (en) * | 1983-04-27 | 1984-11-13 | Hitachi Ltd | Operational amplifier |
| JPS6035620B2 (en) * | 1977-03-24 | 1985-08-15 | 旭硝子株式会社 | gas detection element |
-
1986
- 1986-10-24 JP JP25447986A patent/JPS63108808A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6035620B2 (en) * | 1977-03-24 | 1985-08-15 | 旭硝子株式会社 | gas detection element |
| JPS59200511A (en) * | 1983-04-27 | 1984-11-13 | Hitachi Ltd | Operational amplifier |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01274736A (en) * | 1988-04-26 | 1989-11-02 | Canon Inc | Optical device equipped with visual point direction detecting device |
| US5610681A (en) * | 1992-10-31 | 1997-03-11 | Canon Kabushiki Kaisha | Optical eye-control apparatus |
| WO1997039486A1 (en) * | 1996-04-15 | 1997-10-23 | Rohm Co., Ltd. | Image sensor chip, method for manufacturing the same, and image sensor |
| US6169279B1 (en) | 1996-04-15 | 2001-01-02 | Rohm Co., Ltd. | Image sensor chip, method for manufacturing the same, and image sensor therefor |
| US6468827B1 (en) | 1996-04-15 | 2002-10-22 | Hisayoshi Fujimoto | Method for manufacturing image sensor chips |
| KR100384360B1 (en) * | 1996-04-15 | 2003-11-17 | 로무 가부시키가이샤 | Image sensor chip, manufacturing method and image sensor |
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