JPH05343926A - Optical reception circuit - Google Patents
Optical reception circuitInfo
- Publication number
- JPH05343926A JPH05343926A JP4145727A JP14572792A JPH05343926A JP H05343926 A JPH05343926 A JP H05343926A JP 4145727 A JP4145727 A JP 4145727A JP 14572792 A JP14572792 A JP 14572792A JP H05343926 A JPH05343926 A JP H05343926A
- Authority
- JP
- Japan
- Prior art keywords
- input signal
- apd1
- optical input
- current
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、高光電変換効率と高速
応答が可能とされたアバランシェフォトダイオードを含
む光受信回路に係わり、特に回路構成簡単にして、アバ
ランシェフォトダイオードでの電流増倍率が光入力信号
の大きさに応じて最適に制御可とされた光受信回路に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical receiving circuit including an avalanche photodiode capable of high photoelectric conversion efficiency and high-speed response. Particularly, the circuit configuration is simplified and the current multiplication factor in the avalanche photodiode is improved. The present invention relates to an optical receiving circuit that can be optimally controlled according to the magnitude of an optical input signal.
【0002】[0002]
【従来の技術】これまでの、アバランシェフォトダイオ
ード(以下、単にAPDと称す)を光信号受信素子とし
て含む光受信回路としては、図2に示すように、APD
1にはバイアス電源2より高一定逆バイアス電圧が単に
印加されるか、または、特開平3ー136419号公報
に記載のように、APDに印加される高逆バイアス電圧
はフィードバック制御によって、可変に制御されるよう
になっている。なお、図2における前置増幅器3は、A
PD1での光電変換により生じた光電流を電圧に変換し
た上、増幅するためのものである。2. Description of the Related Art A conventional optical receiving circuit including an avalanche photodiode (hereinafter, simply referred to as APD) as an optical signal receiving element is shown in FIG.
1, a high constant reverse bias voltage is simply applied from the bias power source 2, or the high reverse bias voltage applied to the APD is variably changed by feedback control as described in JP-A-3-136419. It is controlled. The preamplifier 3 in FIG.
This is for converting a photocurrent generated by photoelectric conversion in PD1 into a voltage and then amplifying it.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、APD
に高逆バイアス電圧が電圧一定として単に印加される場
合には、出力信号におけるS/Nは光入力信号の強度に
応じ最適に制御され得ないものとなっている。また、上
記公報による場合には、光入力信号の強度に応じAPD
への逆バイアス電圧はフィードバック制御により可変に
制御されているも、回路構成の徒な複雑化は避けられな
いものとなっている。本発明の目的は、回路構成簡単に
して、アバランシェフォトダイオードに印加される逆バ
イアス電圧が、光入力信号の大きさに応じて最適に制御
され得る光受信回路を供するにある。However, the APD
When a high reverse bias voltage is simply applied as a constant voltage, the S / N ratio of the output signal cannot be optimally controlled according to the intensity of the optical input signal. Further, according to the above publication, the APD is changed according to the intensity of the optical input signal.
Although the reverse bias voltage to V is variably controlled by the feedback control, it is inevitable that the circuit configuration becomes complicated. An object of the present invention is to provide an optical receiving circuit in which the circuit configuration is simplified and the reverse bias voltage applied to the avalanche photodiode can be optimally controlled according to the magnitude of the optical input signal.
【0004】[0004]
【課題を解決するための手段】上記目的は、アバランシ
ェフォトダイオードに対し、少なくとも抵抗を直列に挿
入接続せしめることで達成される。The above object can be achieved by inserting and connecting at least a resistor in series to an avalanche photodiode.
【0005】[0005]
【作用】APDからは光入力信号の大きさに応じた光電
流が出力されるが、光電流が大きくなる程に、APDに
直列に挿入接続せしめられている抵抗での降下電圧は大
きくなる一方、APDへの印加電圧は逆に小さくなるべ
く自動的に制御される結果、APDでの電流増倍率が光
入力信号の大きさに応じて最適に制御され得るというも
のである。一般に、光入力信号の強度が小さい程に前置
増幅器からの出力信号のS/Nを最大にする電流増倍率
(最適増倍率)は小さくなることから、光入力信号の強
度如何に拘わらず、APDでは最適増倍率を維持し得る
ものである。The APD outputs a photocurrent according to the magnitude of the optical input signal. As the photocurrent increases, the voltage drop at the resistor connected in series to the APD increases. On the contrary, the voltage applied to the APD is automatically controlled so as to become smaller, and as a result, the current multiplication factor in the APD can be optimally controlled according to the magnitude of the optical input signal. Generally, the smaller the intensity of the optical input signal, the smaller the current multiplication factor (optimum multiplication factor) that maximizes the S / N of the output signal from the preamplifier. Therefore, regardless of the intensity of the optical input signal, With APD, the optimum multiplication factor can be maintained.
【0006】[0006]
【実施例】以下、本発明を図1により説明する。図1は
本発明による光受信回路のその要部の構成を示したもの
である。図示のように、光信号受信素子としてのAPD
1は、バイアス電源2により逆バイアスされた状態で使
用されるが、その際、その逆バイアス電圧が大きい程
に、APD1での受光感度、雑音はともに増倍されるも
のとなっている。したがって、一般にその逆バイアス電
圧の大きさは、APD1の降伏電圧よりも相当小さい値
に設定されたものとなっている。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to FIG. FIG. 1 shows the configuration of the main part of an optical receiving circuit according to the present invention. As shown, an APD as an optical signal receiving element
1 is used in a state of being reverse-biased by the bias power supply 2, and at that time, the larger the reverse-bias voltage is, the more the light-receiving sensitivity and noise in the APD 1 are multiplied. Therefore, the magnitude of the reverse bias voltage is generally set to a value considerably smaller than the breakdown voltage of APD1.
【0007】さて、本発明による光受信回路では、AP
D1に対しては抵抗4が直列接続せしめられた上、AP
D1はバイアス電源2によって逆バイアス状態におかれ
るものとなっている。この状態では、外部からの光入力
信号はAPD1での光電変換によりその強度に応じた光
電流に変換された上、更に前置増幅器3で電流ー電圧変
換、増幅されることによって、出力信号として得られる
ようになっているが、その際、光電流による抵抗4での
降下電圧はその光電流の大きさに比例することから、バ
イアス電源2の電源電圧が一定である限りにおいては、
APD1への逆バイアス電圧の大きさは変化せしめられ
るというものである。In the light receiving circuit according to the present invention, the AP
Resistor 4 is connected in series with D1 and AP
D1 is set in a reverse bias state by the bias power supply 2. In this state, an optical input signal from the outside is converted into a photocurrent according to its intensity by photoelectric conversion in the APD 1, and further is current-voltage converted and amplified in the preamplifier 3 to be output as an output signal. Although the voltage drop at the resistor 4 due to the photocurrent is proportional to the magnitude of the photocurrent at that time, as long as the power supply voltage of the bias power supply 2 is constant,
The magnitude of the reverse bias voltage applied to the APD 1 can be changed.
【0008】即ち、光入力信号の強度が小さい場合に
は、APD1への逆バイアス電圧は大なる方向に、ま
た、その強度が大きい場合は、APD1への逆バイアス
電圧は小なる方向に自動的に可変設定せしめられる結
果、APD1での電流増倍率もまた、光入力信号の強度
に応じて変化せしめられるというものである。換言すれ
ば、APD1での電流増倍率は、光入力信号の強度に応
じて最適増倍率となるべく変化せしめられているわけで
ある。That is, when the intensity of the optical input signal is small, the reverse bias voltage to the APD1 is increased, and when the intensity is large, the reverse bias voltage to the APD1 is automatically decreased. As a result of being variably set to, the current multiplication factor in the APD1 is also changed according to the intensity of the optical input signal. In other words, the current multiplication factor in the APD 1 is changed as much as possible to be the optimum multiplication factor according to the intensity of the optical input signal.
【0009】[0009]
【発明の効果】以上、説明したように、請求項1による
場合は、回路構成簡単にして、アバランシェフォトダイ
オードに印加される逆バイアス電圧が、光入力信号の大
きさに応じて最適に制御され得るものとなっている。As described above, according to the first aspect, the circuit configuration is simplified and the reverse bias voltage applied to the avalanche photodiode is optimally controlled according to the magnitude of the optical input signal. It is a reward.
【図1】図1は、本発明による光受信回路のその要部の
構成を示す図FIG. 1 is a diagram showing a configuration of a main part of an optical receiving circuit according to the present invention.
【図2】図2は、従来技術に係る光受信回路の構成を示
す図FIG. 2 is a diagram showing a configuration of an optical receiving circuit according to a conventional technique.
1…APD、2…バイアス電源、3…前置増幅器、4…
抵抗1 ... APD, 2 ... Bias power supply, 3 ... Preamplifier, 4 ...
resistance
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 // H01L 31/10 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display area // H01L 31/10
Claims (1)
フォトダイオードを光信号受信素子として含む光受信回
路であって、アバランシェフォトダイオードを、該アバ
ランシェフォトダイオードに対し少なくとも抵抗を直列
に挿入接続せしめた状態で、高一定電圧で逆バイアスせ
しめてなる構成の光受信回路。1. An optical receiving circuit including an avalanche photodiode reverse biased with a high voltage as an optical signal receiving element, wherein the avalanche photodiode is connected to at least a resistor in series with the avalanche photodiode. Then, an optical receiver circuit configured to be reverse biased with a high constant voltage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4145727A JPH05343926A (en) | 1992-06-05 | 1992-06-05 | Optical reception circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4145727A JPH05343926A (en) | 1992-06-05 | 1992-06-05 | Optical reception circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05343926A true JPH05343926A (en) | 1993-12-24 |
Family
ID=15391742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4145727A Pending JPH05343926A (en) | 1992-06-05 | 1992-06-05 | Optical reception circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05343926A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006054507A (en) * | 2004-08-09 | 2006-02-23 | Sumitomo Electric Ind Ltd | Optical receiving circuit |
US8190034B2 (en) | 2008-01-31 | 2012-05-29 | Sumitomo Electric Industries, Ltd. | Optical receiver applicable to GPON system |
-
1992
- 1992-06-05 JP JP4145727A patent/JPH05343926A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006054507A (en) * | 2004-08-09 | 2006-02-23 | Sumitomo Electric Ind Ltd | Optical receiving circuit |
US7265333B2 (en) | 2004-08-09 | 2007-09-04 | Sumitomo Electric Industries, Ltd. | Light-receiving circuit |
JP4590974B2 (en) * | 2004-08-09 | 2010-12-01 | 住友電気工業株式会社 | Optical receiver circuit |
US8190034B2 (en) | 2008-01-31 | 2012-05-29 | Sumitomo Electric Industries, Ltd. | Optical receiver applicable to GPON system |
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