JPS60178662A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60178662A
JPS60178662A JP59033953A JP3395384A JPS60178662A JP S60178662 A JPS60178662 A JP S60178662A JP 59033953 A JP59033953 A JP 59033953A JP 3395384 A JP3395384 A JP 3395384A JP S60178662 A JPS60178662 A JP S60178662A
Authority
JP
Japan
Prior art keywords
light
light receiving
substrate
photodiode
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59033953A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0542828B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Masatoshi Sekine
優年 関根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59033953A priority Critical patent/JPS60178662A/ja
Publication of JPS60178662A publication Critical patent/JPS60178662A/ja
Publication of JPH0542828B2 publication Critical patent/JPH0542828B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP59033953A 1984-02-24 1984-02-24 半導体装置 Granted JPS60178662A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59033953A JPS60178662A (ja) 1984-02-24 1984-02-24 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59033953A JPS60178662A (ja) 1984-02-24 1984-02-24 半導体装置

Publications (2)

Publication Number Publication Date
JPS60178662A true JPS60178662A (ja) 1985-09-12
JPH0542828B2 JPH0542828B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-06-29

Family

ID=12400853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59033953A Granted JPS60178662A (ja) 1984-02-24 1984-02-24 半導体装置

Country Status (1)

Country Link
JP (1) JPS60178662A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318668A (ja) * 1986-07-11 1988-01-26 Canon Inc 光電変換装置の製造方法
US5517038A (en) * 1992-08-11 1996-05-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including three-dimensionally disposed logic elements for improving degree of integration
KR100718878B1 (ko) 2005-06-28 2007-05-17 (주)실리콘화일 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318668A (ja) * 1986-07-11 1988-01-26 Canon Inc 光電変換装置の製造方法
US5517038A (en) * 1992-08-11 1996-05-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including three-dimensionally disposed logic elements for improving degree of integration
KR100718878B1 (ko) 2005-06-28 2007-05-17 (주)실리콘화일 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법

Also Published As

Publication number Publication date
JPH0542828B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-06-29

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