JPS60175229A - Photo-electro-magnetic recording medium - Google Patents

Abstract

PURPOSE:To form a photo-electro-magnetic recording medium which has excellent reproducibility and magnetooptic effect and permits high-density recording and reproduction by forming a thin vertical magnetic anisotropic film consisting of a magnetoplumbite type magnetic material. CONSTITUTION:A thin vertical magnetic anisotropic film consisting of a magnetoplumbite type magnetic material is formed by growing epitaxially a magnetoplumbite type magnetic material 3 atop the crystal face of an underlying film 2 formed on the crystal face of a base 1 or on the base to within + or -20% the misfit rate of the crystal face of said underlying film with respect to the C face of the crystal face of said magnetic material. More specifically, the layer 3 is formed by using the magnetoplumbite type magnetic material as a target, maintaining the substrate at 550-700 deg.C and sticking said material onto the substrate by a method such as sputtering to usually about 0.1-10mum thickness. The layer 3 is thus formed as the vertical magnetic anisotropic film oriented in the C face in accordance with the crystal orientation of the film 2. A protective layer 4 is formed on such magnetic layer 3.

Description

DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a magneto-optical recording medium having a perpendicular magnetic anisotropic thin film of a magnetobramnotite type magnetic material used in hard disks, floppy disks, document files, etc. Various studies have been conducted on magneto-optical recording media that perform magnetic recording using laser light for high-density recording. Conventionally, the magnetic films used in these magneto-optical recording media include transition metals (F., 00) and rare earth metals (Tb, Gd,...
An amorphous magnetic alloy film made of an alloy with .) is known. These amorphous magnetic alloy films have advantages such as low Curie temperature and low optical noise because they are amorphous, but rare earth metals have high oxidation activity and are easily oxidized, resulting in deterioration of magnetic properties due to oxidation. However, the recording or reproducing characteristics tend to deteriorate easily, and the film stability is poor.

Therefore, the present inventors developed a magnetoplumbite-type oxide magnetic material with excellent film stability and low Curie temperature, that is, M@0゜n (MxFe (2-yx)0, ), (
Here, MeiBa, Pb, Sr M: Ga, AJ.

Mn, Oo, Nl, Zn, TI, In, Sc, Ou
, Bl *0rtTat几h , Je , an , G
At least one or more of d, 'rb, V, Y, 8m, Mo, Ru, etc.)C:O<X≦1sn"5≦n≦6,
Various studies have been conducted on the application of m: ion valence of M) to magneto-optical recording media. In order to create a magneto-optical recording material using these magnetoplumbite type oxide magnetic materials, generally a method such as vacuum evaporation, sputtering, ion blating, etc. is used to target these basic materials on a support at a substrate temperature of 500 to 700C. This can be obtained by depositing the film to a thickness of about 0.1-10 μm. However, the magnetic film obtained in this way is difficult to become a perpendicular magnetic anisotropic film.
However, it cannot be said that the optical effects are excellent and the reproducibility is good, and furthermore, the bit density is not fully satisfactory.

Generally, recording and reproduction on a magneto-optical recording medium is performed as follows. In other words, recording is performed by heating the magnetic film by irradiating a laser beam modulated with an information signal to change the direction of magnetization, taking advantage of the characteristics of the magnetic film's rapid change in coercive force in response to temperature changes near its Curie temperature or compensation temperature. Reproduction is performed by reversing the information, and reading is performed by utilizing the difference in the magneto-optical effect of the magnetic film recorded in this manner. Therefore, in order to improve the pit density and reproducibility described above, it is necessary to provide a perpendicular magnetic anisotropic film in the same direction as the incident laser beam, that is, to provide a C-axis magnetic orientation.

Purpose The purpose of the present invention is to create a magneto-optical recording medium that has excellent reproducibility and magneto-optic effects and is capable of high-density recording and reproduction by punching a perpendicular magnetic anisotropic thin film of magnetoplum/mite type magnetic material. It is about providing.

Structure The present invention aims to ensure that the misfit rate of the crystal plane of the support or the crystal plane of the base film formed on the support with respect to the crystal plane C plane of the magnetoplumbite type magnetic material epitaxially grown on the upper surface thereof is within ±30%. This is a magneto-optical recording medium in which a perpendicular magnetic anisotropy thin film of a magnetic material of a yoshima magnetite type is formed.

The present inventors have general 2 Ms0. n [: MxFe (
2-rA)0, ], (where Me:Ba, Sr, Pb,
At least one type of Oa, M: G a g A12 M
n , Or e Z n y T i HI n +8
c, Oo, N1tan, Ou, BiyTa*G@yMg
At least one type of 1MO, RutRh, Gd, Tb, V@Yearn, etc., X:O<X≦Is n! 5≦n≦6, m
In the process of forming a thin film of magnetoplumbite-type oxide magnetic material represented by ion valence of M) on various supports by methods such as vacuum evaporation, sputtering, and ion blating, magnetoplumbite-type oxide magnetic material The thin film of the body is greatly influenced by the physical properties of the support to which the magnetic material is attached or the underlying film formed on the support, especially the misfit rate. In order to achieve epitaxial growth with zero-axis orientation, the crystal plane of the support to which this magnetic thin film is to be deposited or the crystal plane of the base film formed on the support and the crystal of the magnetozorhamnosignature perpendicular magnetic film to be formed thereon. It has been found that it is necessary to have a misfit rate within ±30% with respect to the plane 0 axis.

Here, the misfit rate f1 is defined as 1=1, which is the direction of two appropriately selected interfaces.

2, and the atomic spacing between the growth layer and its base crystal is Ai, α1
Then, t , =a 辷suXIGO-(1) α l is shown.

However, in the present invention, the magnetoplumbite type magnetic material is
If the atomic spacing Ai of the crystal lattice is used for plane orientation, the atomic spacing cl of these selected base materials will have a misfit rate within ±30%. In other words, in the present invention, when forming a magnetoplumbite type magnetic material into a perpendicular magnetic anisotropic thin film, the atomic spacing is such that the misfit rate with respect to the 0-axis atomic spacing of the magnetoplumbite type magnetic material is within ±30%. By selecting a support having C or a base film formed on the support, and by epitaxially growing a magnetoplumbite type magnetic substance on the support or base coat, the magnetoplumbite type magnetic substance has C. A perpendicular magnetic anisotropic thin film with plane orientation is obtained.

Here, a specific example of a magnetoplumbite type oxide magnetic material that can be applied in the present invention is (BaO)6°'("0
．． 4 Fe2-0 Hatake], (BaO,15,6(Z
n. 1 m ”Om..

"5e40s) t [:Ba0) 6゜""@,
a' ” 1. T o, ]*(5rO) 6-o
("11,4 p"1.110.) t (p b
o:)s,.

(Mn0., Fe,.”B) T (B ILO
:l 6.0 (Oro, 4Fet, o,] p(Ba
d) 5.6 CIno,*Fe,,,O,)*(S
rO) 5.6 (Sc6.1 ”” 1.101]
ss(P b O) 5.6 (Alo, s Zn0.
@ *Fe 01)t(BaO)6.0(,100,B
l. ,,Fe1. ．． 01l)+-6 (n a o ]s-6["6.II B'O,j p
@,,,o, ) t Csr o ]6, OCAJ
o, Ti. ,,Fe,,4o, :] #I:B
a0)6.0(Ga(1,1"1.o OB) *(SrQ)6,o(zn F
e1911 o, :l +(BILO) 6-0
(Ooo,, zn 0.11 F 61,860
B :l * (B'O)” (AJ I n g, *
@ Fe 3. , a Os −1e CS r O]
6-1) 〇- (AJ o, s 800.l, Fe t, sa o,
) l (8rO)5.6 (Gao, a.

"o, ts Fe t, ss o, ) + (SrO
:15.6[:Ga,,8c0. ,.

Fe1B I Om) t CG” o) ” (A
J6. I Z n o, t * F e s,. .

03, :l * (0,6BaOO,40aO:l 6
．． Q CAj'o, m Zn O,1! Fet,as
o, ) # (0,4BaO0,6PbO)6.0
(AJlo,.

Zn6.1ffiFe,. t On: l etc. 2>”Kerarel.

As a support having a crystal plane with a misfit ratio within ±30% from the crystal plane 0 of these magnetobutite oxide magnetic materials, or a base film formed on the support,
For example, F・@04 (1! l) gα-Fe, O
s (001) tAIMO, (001) , ZnO(
001)tMgO(111)yMnZnFe104
(111) tMnFe*o4 (111) y Ba0
Fe10B (001) e Pb0FetOs(00
/)ySrOFa,O,(00It) e OOF@,
O, (l l I LNtpe1o4(lll), AJ
N(001)edl enumerated 1'j'.

Specific examples of misfit ratios between these crystal planes and the crystal plane C plane of barium 7-2ite as a magnetoplumbite type oxide magnetic material are as follows.

From the above table, it can be seen that the misfit ratio of each of the above-mentioned crystal planes is within ±30% with respect to the 0 plane of barium ferrite, which is a typical magnetoplumbite type aged magnetic material. Furthermore, the misfit rate for the zero plane of magnetoplumbite type oxide magnetic materials other than barium ferrite is within ±30%. In order to make the magnetoplumbite type oxide magnetic material C-plane oriented in this way, it is necessary to grow the magnetoplumbite-type oxide magnetic material by 7 years on a crystal orientation plane whose misfit rate is within ±30%, preferably within ±20%, from this 0-plane. (A perpendicularly magnetized thin film of a magnetoplumbite type oxide magnetic material can be obtained. Conversely, a perpendicularly magnetized thin film cannot be formed on a crystal plane with a misfit ratio exceeding ±30%.

Specific examples will be described below with reference to the drawings.

In FIG. 1, l is a support, 2 is a base film, 3 is a magnetic layer, and 4 is a protective layer. Examples of the support material include metal materials such as aluminum, aluminum-magnesium alloy, aluminum bronze, brass, chromel, stainless steel, and duralumin, or equivalent glass such as quartz glass, crystallized glass, single crystal silicon, inorganic silicon + J-con, etc. , Pyrex glass, GGGSLi tantalate, sapphire, transparent ceramic material, Mg0t Mg0LIF *Bo
Inorganic materials such as Zr01tY101tTho1 and the like can be used. The base film 2 formed on these supports is a material having a crystal orientation with a misfit rate within ±30%, preferably within ±20%, with respect to the crystal plane C plane of the magnetized magnet oxide magnetic material.

From scratch, it can be heated to a substrate temperature of room temperature to
At 00C, it is usually deposited to a thickness of about 0.1xlOμnt. Usually, when the support 1 has a crystal plane, this base film 2 is made of Fe104. α-Fe2O3*
klzo@ e ZnO, B a OF @081Mn
When a film is formed using a base material such as ZnFe104 by a sputtering method, a reactive sputtering method, a vapor deposition method, a 0■D method, etc., a crystal orientation with a vertical shift ratio within ±30% with respect to the zero plane of a magnetoplumbite type oxide magnetic material can be obtained. It is formed as a sticky base film. Therefore, when the support l is crystalline with a misfit rate of ±30%, an amorphous S t O, is preformed on this support, and a base film 2 is formed on the S i O, layer. I'll do what I do.

A magnetoplumbite type oxide magnetic material 3 is formed on the base film 2 thus formed. This magnetic N3 is formed using a magnetoplumbite type oxide magnetic material as a target at a substrate temperature of 550~. Maintaining the temperature at 700C and using methods such as sputtering, vacuum evaporation, OVD, etc., it is usually 0.1-10
A multilayer film is formed by depositing the film to a thickness of approximately μm. As a result, the magnetic layer 3 becomes a perpendicular magnetic anisotropic film oriented in the C-plane in accordance with the crystal orientation of the underlying film 2. The protective N4 formed on the magnetic layer 3 is made of acrylic resin, polyurethane resin, polycarbonate resin, preethersulfone resin, polyamide resin, epoxy resin, TiN%
81. N4%AIN%0rNs TaN5810g,
sio etc. is applied to the magnetic layer 3 to a thickness of 0.1 to 10 μm by a coating method in the case of resin, or by a method such as vacuum evaporation, sputtering, reaction snorting, or OVD in the case of other materials.
This is done by adhering to a certain degree. Note that the base film 2 may be provided in two layers or in multiple layers, and the misfit rate with respect to the zero-plane orientation of the magnetramite oxide magnetic material may be made smaller as the layers are closer to the magnetic layer 3.

Figure 2 shows an example in which the support l itself is a material with a crystal orientation having a misfit rate within ±30% of the 0-plane orientation of the magnetoblast type oxide magnetic material of the magnetic layer 3. In this case, C-plane oriented, that is, perpendicularly magnetized magnetic M3 is formed even without providing the base film 2.

Figure 3 shows an example of a magneto-optical recording medium for reproduction using the reflective Faraday effect.
and the base film 2.

This is a stack of reflective layers 5 made of Au, Pt, Ou, AJ, etc.

In addition, the magneto-optical recording medium as shown in FIGS. 1 and 2 can be preferably used when the magnetic layer 3 is a magnetoplumbite type oxide magnetic material that has relatively no light-transmitting property. It is read out using a laser beam that is modulated or deflected using the Kerr effect.

Effects According to the present invention as described above, the crystal orientation of the support or the base film formed on the support is within ±30 degrees of the crystal plane C plane of the magnetic material of the magnetic material deposited thereon. %, it is possible to obtain a perpendicular magnetic anisotropic thin film of magnetoplumbite type oxide magnetic material, which has an excellent magneto-optical effect, increases the number of bits, dramatically improves reproducibility, and improves high performance. A magneto-optical recording medium capable of density recording and reproduction is obtained.

Examples are shown below.

Example 1 The surface of the St wafer support was oxidized to a film thickness of 0.3μ
A ZnO film with a thickness of 0.5 μm was formed on this surface by a reactive sputtering method.

The obtained ZnO film showed a (001) orientation plane.

Next, sputtering is applied to this surface at a substrate temperature of 550~
B a O6-0 (A l 67 F
A magneto-optical recording medium was obtained by depositing e t,y Os :1 to a thickness of 0.3 μm.

As a result of tank construction analysis of this membrane, BaO6, OCAJoog F
The crystal orientation plane of e,, O,:] is (001), but l
was 6t8t14*, and as a result of xm diffraction, it was confirmed that it was a perpendicular magnetization film with orientation in the O axis.

Example 2 Same as Example 1, but AIN was used instead of ZnO as the base film, and BaO6,0 (Ga,
A magneto-optical recording medium was obtained in the same manner except for the following: , F@,, O,). As a result, the crystal orientation plane of AJN in the base film was (001), and BaO6,0 (G a 6
．． a F e s,. 0. ] was confirmed to have a crystal plane of (oog, where l is 6, 8, 14.), and that the wide magnetic layer was a perpendicular magnetization film.

Example 3 Film thickness 0.3 μm formed by sputtering method on quartz glass
8108 and a reactive sputtering method to form a film of 0.3 μm thick. Next, this surface was prepared μm to obtain a magneto-optical recording medium.As a result, the crystal orientation plane of IN in the underlayer film was (001), and the crystal orientation plane of the magnetic layer above it was (001). It was confirmed that the magnetic layer was a perpendicularly magnetized film.

(Space below) Comparative Example 1 Same as Example 1, but without forming a ZnO base film, sputtering was performed directly on the 81 wafer, maintaining the substrate temperature at 550 to 700 C, and BaO6,o (Ados
A magneto-optical recording medium was obtained by preparing a film having a film thickness of o and sttm. An X-ray diffraction diagram of this magnetic film is shown in FIG. As can be seen from FIG. 4, the obtained magnetic film has a diffraction intensity (OOS) of the C-axis oriented surface.

The peak intensities of (oog) and (0014) were small, indicating that this magnetic film had weak C-axis orientation, that is, it was not a good perpendicular magnetization film.

Moreover, FIG. 5 shows an X-ray diffraction diagram of the magnetic film of Example 1-15. According to this FIG. The strength was large, and the magnetic film according to the example had strong 0-axis orientation, indicating that it was a good perpendicular magnetic anisotropy film.

[Brief explanation of the drawing]

1 to 3 are schematic configuration diagrams showing an example of a magneto-optical recording medium according to the present invention. FIG. 4 is an X-ray diffraction diagram of a magnetic film of a magneto-optical recording medium obtained in a comparative example. FIG. 5 is an X-ray diffraction diagram of the magnetic film of the magneto-optical recording medium obtained in the example. l...Support 2...Undercoat film 3...Magnetic layer 4...Protective layer 5...Reflective layer Procedural amendment (1) April 0, 1981 Mr. Kazuo Wakasugi, Commissioner of the Japan Patent Office 1-3-6 Nakamagome, Ota-ku, Tokyo (674) Lee Co., Ltd. - Representative Hama 1) Hiro 4, Agent 4-5-5 Kojimachi, Chiyoda-ku, Tokyo (102) 5, Specification subject to amendment Correct "sr" in column 7 of "Detailed Description of the Invention" (1), page 2, line 13, to read "at least one type of jar". (2) Correct "5oo" in the first line of page 3 to "4oo". (3) In the 6th line of the same page, "optical effect" is corrected to "magneto-optical effect." (4) Correct "crystal plane C plane" on page 4, line 11 to "crystal crystal plane 0". (5) Correct “physical properties” on page 5, line 7 to “characteristics.” (0) "Base material crystal" in the third line of the same page is corrected to "substrate crystal." (7) “α-F@lO1(001)” in the first line of page 8
1, l, 0. (001), Zn0 (OOIJ as “α-
Fe1010 side, AJ, O, 0 side, Zn0 (corrected to February 00. (8) “Ba0F*10g (001)” in the third line of the same page
,pbope,o, (ool)J as jBaOF@,O
, (100), pbor@mos (Zoo)J. (9) Same page 4th line Oyo and 5th line Or S r O
F @106(004)J and “1N(QOJ)”
are corrected to "5rOF·tOm (100) J" and "AIN(002)", respectively. αQ “α-Fe@0.(001)J,” “A” in the table on the same page
IN0゜(ool) J, r AJN(oolJ and [Zn0(001)JwosotL(' h r (L-F
'etOs 0th side', f AJtOa O arrived, i”AJ
N (00 February and l' Zn0 (002) J. (111, page 9, line 15, "It becomes impossible to form." is corrected to 0, which makes it difficult to form.) 117J No. Correct “crystal plane 0” in the 9th line of page 10 to “hexagonal C plane of the crystal”.
Correct it as OF@10@J. En On page 11, line 9, ``Correct 550J to j4ooJ.'' Correct r(001)j on the last line of page 13 to r(002)J. ti61 g Page 14, line 2 (D ``5soJt -“4
Correct it to ooJ. +17) 3rd line of the same page Or(oot) J t r(o
Correct it to oz month. α seconds 15th page 4th line r(001)J is r(002
) Correct it as J. Ill Change “(001)deυ,” in the 5th line of the same page to j(
ooz), but l is 'e8s14,'' he corrected. (4) In the table on page 16, delete "l'-(ooz)hexa" in the column for base film (1) of Example 4. (211 r in the base film (1) column of Example 5 in the same table)
(oolI)hexa” is deleted. ■ In the column of base film (1) of Example 8 in the same table,
0 plane to Φ to OJ) is corrected to r(002)J. (2) “(
Correct ooJ)J to r(002)J. r (0(1)
J and "(OsO)J are corrected as f(Zoo)J and j (BaO)J, respectively. (c) r in the base film (1) column of Example 13 in the same table.
Correct (OOl)J to r(100)J. (b) r in the base film (1) column of Example 14 in the same table.
Correct (OOJ)j to r(100)J. □□□ r(OOJ)J in the base film (1) column of Example 15 in the same table is corrected to F (00 February). ”. Prisoner Delete “Axis orientation” in lines 8 and 14 of the same page. ■ Delete [, (oot4) J in line 9 of the same page. C311 Line 8 of the same page Delete the ", (001 ball)" in the eyes. June 1, 1980! 9 Kazuo Wakasugi, Commissioner of the Patent Office 1. Indication of the case 3. Relationship with the amended person case Patent applicant Tokyo 1-3-6 Nakamagome, Ota-ku, Tokyo (674) Ricoh Co., Ltd. Representative Hama 1) Hiro 4, Agent May 29, 1980 8 Attached document catalog drawing page 1 lecture

Claims (1)

[Claims] 1. A magneto-optical recording medium consisting of a support and a magnetic layer, characterized in that the crystal plane of the support and the crystal plane (O) of the magnetozolamnoite type magnetic material have a misfit rate within ±30%. Magneto-optical recording medium.