JPS60170917A - Sputtering method - Google Patents

Abstract

PURPOSE:To make fast the rate of vacuum deposition and thereby improve productivity by using a hard magnetic material magnetized in division within a plane or in the direction perpendicular to the plane as the target and depositing a metal film by sputter on the occasion of depositing a metal film on a glass substrate. CONSTITUTION:On the occasion of depositing a metal film to a glass substrate, an SmCo5 plate magnetized in division within a plane or in the direction perpendicular to the plane is used as a target, and a metal film is vacuum deposited on the glass substrate by vaporizing SmCo5 with a high frequency sputtering apparatus. In this case as the sputtering condition, Ar gas having partial pressure of 0.05Torr and RF power is 500W. Thereby, a film forming rate is remarkably improved as compared with a target not magnetized. This is because a magnetic field generated from magnetized SmCo5 accelerates the ionization and reduction of target is equalized as much as division of magnetization increases.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for sputtering hard magnetic materials.

[Prior art and its problems]

Thin film manufacturing methods include vacuum evaporation, sputtering, ion blating, CVD, and wet plating.
Among these methods, the sputtering method can obtain films made of various materials such as metal ceramics and semiconductors with arbitrary compositions.
Widely used.

For example, when producing a metal film, this metal is used as a target and a negative DC voltage or high frequency is applied to the target. In addition, for the purpose of increasing the film formation speed,
The magnetron sputtering method was invented, in which a permanent magnet is placed near the target, and the lines of magnetic force generated by this magnet intersect at right angles to the electric field just above the target surface, trapping electrons and promoting ionization.This method has improved film production. Contributing.

However, when sputtering a magnetic material using this method, the magnetic lines of force generated by the magnet pass through the inside of the magnetic material, resulting in them coming out directly above the target surface, making it impossible to increase the film formation rate. For this reason, a triode sputtering method was invented that generates hot electrons to promote ionization, but this method suffers from uneven ionization due to poor distribution of hot electrons, and when using a large target. There were problems such as the effect of speeding up was reduced.

[Purpose of the invention]

It is an object of the present invention to provide a method for solving these problems and increasing the film formation rate (sputtering rate) of a hard magnetic material among magnetic materials.

[Structure of the invention]

The sputtering method of the present invention is characterized in that sputtering is carried out using a hard magnetic material that is magnetized in at least one segment in the plane and in a direction perpendicular to the plane as a target.

〔Example〕

Hereinafter, the present invention will be specifically explained based on Examples.

That is, in the present invention, a film was formed on a glass substrate using a high-frequency sputtering device using a SmCo5 plate magnetized with multiple poles in the plane and in a direction perpendicular to the plane as a target.

The sputtering conditions were: argon partial pressure 0.05 Torr, R
The experiment was conducted with an F power of 500 W, and the relationship with the number of poles of multi-pole magnetization and the relationship with an unmagnetized SmCo5 target were investigated.

The results are shown in FIG. 1, with the horizontal axis representing the number of magnetized divisions and the vertical axis representing the film formation rate (person/minute). In the figure, a shows the case where magnetization is perpendicular to the plane, and b shows the case where magnetization is carried out in the plane. Further, Fig. 2 shows an example of magnetization, and fa
t indicates an example of divided magnetization in the direction perpendicular to the surface of the target (1), and (bl indicates an example of magnetization in the in-plane direction).

As can be seen from these results, when a magnetized Couget is used, the film formation rate is higher than when a non-magnetized Couget is used. This is magnetized SmC
This is because the magnetic lines of force generated from o5 play a role in promoting ionization, and the more the magnetization in the direction perpendicular to the target surface is divided into smaller parts and the number of poles is increased, the more uniform the target is. becomes more noticeable.

〔Effect of the invention〕

As described above, according to the sputtering method of the present invention, the sputtering speed of the hard magnetic material can be increased using a conventional sputtering apparatus, and productivity can be greatly improved.

[Brief explanation of drawings]

FIG. 1 is a graph showing nine results of multipolar magnetization that did not reach the film formation speed, and FIG. 12 is an explanatory diagram showing an example of magnetization. (I): Target NUN pole +'s: S pole Patent applicant Masu Tebori (Yaskawa Electric Co., Ltd. agent)
1 other person)

Claims (1)

[Claims] 1. A sputtering method characterized by sputtering using a hard magnetic material as a target that is magnetized in at least one segment in the plane and in a direction perpendicular to the plane.