JPS60167416A - Processing apparatus - Google Patents

Abstract

PURPOSE:To increase a rate of effective processing part by accommodating a reaction box to which the reaction gas is supplied within a reaction furnace. CONSTITUTION:A wafer 15 as the processing object is held under the condition as being arranged standing on a jig 14. After a cover 5 is closed, a reaction box 3 accommodating the jig 14 is inserted and positioned within a reaction furnace 1. Thereafter, the inside of reaction furnace 1 is heated. When the inside the furnace is stabilized at the predetermined temperature, the reaction gas is supplied to the reaction box 3. The reaction gas supplied diffuses at the inside of cover 5 from the supply hole 12 and uniformly injected into the side of body 4 from many small holes 11 in the form of shower. Simultaneously, since the exhaustion path 9 is attracted by a negative pressure source like a vacuum pump, etc., the reaction gas injected from small holes 11 passes straight between the wafers 15 as the flow of layer in such a way as being absorbed into small holes 7 of the bottom plate 6. The reaction gas absorbed by the small holes 7 for absorption is collected to the exhaustion hole 6 and is exhausted passing an exhaustion path 9.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a processing technology, particularly a technology for processing a workpiece using a CVD reaction, and relates to, for example, the manufacturing of semiconductor devices. , relates to techniques effective for use in forming thin films on wafers.

[Background technology]

A CVD device that forms polysilicon films or nitride films on wafers in the manufacture of semiconductor devices, and is configured to place the wafer on a susceptor that rotates in a reactor to form a uniform film. Another conceivable method is one in which a plurality of wafers are arranged vertically on a jig, and the jig is housed in a long cylindrical reactor for batch processing.

However, the present inventor has found that such a CVD apparatus has a problem in that the wafer processing portion is small compared to the size of the reactor, and the apparatus floor area becomes large.

[Purpose of the invention]

An object of the present invention is to provide a processing technique that can increase the ratio of effective processing portions.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Summary of the invention]

A brief overview of typical inventions disclosed in this application is as follows.

That is, by housing a reaction box into which a reaction gas is flowed in a reaction furnace, reaction processing is effectively performed within the reaction box.

〔Example〕

FIG. 1 shows an embodiment of the present invention (a longitudinal cross-sectional view showing a 4D apparatus, FIG. 2 is a cross-sectional view taken along the line ■--■ in FIG. 1, and FIG. 3 is a perspective view of a reaction box.

In this embodiment, this CVD apparatus is equipped with a reaction furnace 1, and the reaction furnace 1 is formed of quartz glass into a substantially cylindrical shape. One end surface of the reactor 1 is configured to be openable and closable so that a reaction box (to be described later) can be taken in and taken out, and a heater 2 is installed outside the reactor 1 close to the outer periphery. The reaction box 3 housed in the reactor l is composed of a main body 4 and a lid 5 both made of quartz glass. The main body 4 is formed in the shape of a substantially rectangular parallelepiped box with an open top surface, and a bottom plate 6 is placed on the bottom of the main body 4 at appropriate intervals, and the bottom plate 6 has a large number of small holes 7 as suction ports. is drilled.

A discharge port 8 is provided in the center of the bottom wall of the main body 4.
A discharge path 9 is connected to the discharge port 8 .

The lid 5 is formed into a hollow, substantially flat plate shape capable of closing the upper opening of the main body 4, and a lower wall 10 of the lid 5 is provided with a number of small holes 11 as air outlets. A supply port 12 is provided in the center of the upper wall of the lid 5, and a supply path 13 is connected to the outlet 12.

The reaction box 3 is configured to accommodate therein a jig 14 made of quartz glass, and the jig 14 is configured to hold a plurality of wafers 15 in parallel. There is.

Next, the method of use and effect will be explained.

Wafers 15 as objects to be processed are held on a jig 14 in an upright and lined-up state. This jig 14 is housed inside the main body 4 of the reaction box 3 through the top opening of the lid 5 . The reaction box 3 containing the jig 14 has a lid 5
After closing, it is inserted and positioned inside the reactor 1.

Next, the inside of the reactor 1 is heated by the heater 21, and when the inside of the furnace is stabilized at a predetermined temperature, monosilane (
A reaction gas such as SiH4) or silicon tetrachloride (SiC^) is supplied into the reaction box 3. The supplied reaction gas is diffused into the interior of the lid body 5 through the supply port 12 and uniformly blown out into the interior of the main body 4 through the numerous small holes 11 like a shower. At the same time, since the exhaust passage 9 is sucked from a negative pressure source ζ such as a vacuum pump, the reaction gas blown out from the small hole 11 becomes a laminar flow state so that it is blown into the small hole 7 of the opposing bottom plate 6. It passes between each wafer 15 and advances straight. The reaction gas sucked through the small suction hole 7 is collected at the discharge port 6 and discharged through the discharge passage 9.

While the reactive gas flows along the surface of the wafer 15 in a laminar flow state, a CVD film is formed on the surface of the wafer 15, but since the reactive gas is evenly supplied to each wafer 1, the CVD film is
The film D has a uniform thickness and quality, and the thickness and quality of the film on the same wafer are also almost uniform.

〔effect〕

(1) By placing a reaction box containing a plurality of objects to be treated in a reactor and allowing the reaction gas to flow into the reaction box, the reaction can be caused to occur only within the reaction box. By reducing unnecessary parts in the furnace, the proportion of useful parts in the furnace can be increased and the floor space can be reduced.

(2) By flowing the reaction gas from the outlet made of many small holes toward the suction port made of many small holes in the reaction box, the reaction gas is supplied to the object to be processed in a uniform and laminar flow state. As a result, the processing conditions are uniform throughout, and
The quality of processing can be improved.

(3) By forming the reaction box from quartz glass, it is possible to prevent impurities from being generated from the reaction box, thereby avoiding adverse effects on the process.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

For example, the opening/closing structure of the reaction box and the structure for taking in and out of the reactor are not limited to the above embodiments.

The air outlet and the air inlet are not limited to being composed of a large number of small holes, but may be composed of elongated holes, a mesh, or the like.

[Application field]

In the above explanation, the invention made by the present inventor was mainly applied to a CVD apparatus, which is the background field of application. can also be applied.

[Brief explanation of the drawing]

FIG. 1 is a longitudinal cross-sectional view showing an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line 1--2 in FIG. 1, and FIG. 3 is a perspective view of a reaction box.

Claims (1)

[Scope of Claims] 1. A reaction device that includes a jig for holding the object to be treated in multiple folds, and a blow-off port and a blow-in port for accommodating the jig and allowing the reaction gas to flow in one direction. A processing device comprising a box and a reactor containing the reaction box. 2. The processing apparatus according to claim 1, wherein the reaction box is made of quartz glass. 8. The processing device according to claim 1 or 2, wherein the blow-off port and the blow-in port are composed of a large number of small holes.