JPS60165716A - マスクレスイオン注入法におけるイオンビ−ム径の測定方法 - Google Patents

マスクレスイオン注入法におけるイオンビ−ム径の測定方法

Info

Publication number
JPS60165716A
JPS60165716A JP59020072A JP2007284A JPS60165716A JP S60165716 A JPS60165716 A JP S60165716A JP 59020072 A JP59020072 A JP 59020072A JP 2007284 A JP2007284 A JP 2007284A JP S60165716 A JPS60165716 A JP S60165716A
Authority
JP
Japan
Prior art keywords
ion beam
beam diameter
diameter
square hole
intensity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59020072A
Other languages
English (en)
Japanese (ja)
Other versions
JPH026219B2 (cg-RX-API-DMAC7.html
Inventor
Eizo Miyauchi
宮内　栄三
Hiroshi Arimoto
宏 有本
Toshio Hashimoto
橋本　寿夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59020072A priority Critical patent/JPS60165716A/ja
Publication of JPS60165716A publication Critical patent/JPS60165716A/ja
Publication of JPH026219B2 publication Critical patent/JPH026219B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

Landscapes

  • Measurement Of Radiation (AREA)
JP59020072A 1984-02-08 1984-02-08 マスクレスイオン注入法におけるイオンビ−ム径の測定方法 Granted JPS60165716A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59020072A JPS60165716A (ja) 1984-02-08 1984-02-08 マスクレスイオン注入法におけるイオンビ−ム径の測定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59020072A JPS60165716A (ja) 1984-02-08 1984-02-08 マスクレスイオン注入法におけるイオンビ−ム径の測定方法

Publications (2)

Publication Number Publication Date
JPS60165716A true JPS60165716A (ja) 1985-08-28
JPH026219B2 JPH026219B2 (cg-RX-API-DMAC7.html) 1990-02-08

Family

ID=12016894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59020072A Granted JPS60165716A (ja) 1984-02-08 1984-02-08 マスクレスイオン注入法におけるイオンビ−ム径の測定方法

Country Status (1)

Country Link
JP (1) JPS60165716A (cg-RX-API-DMAC7.html)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPANESE JOURNAL OF APPLIED PHYSICS=1983 *

Also Published As

Publication number Publication date
JPH026219B2 (cg-RX-API-DMAC7.html) 1990-02-08

Similar Documents

Publication Publication Date Title
JPS61281579A (ja) 高品質半導体発光デバイスの製造方法
JPH067564B2 (ja) ウェーハ表面の半導体特性測定方法
US6566655B1 (en) Multi-beam SEM for sidewall imaging
ATE56275T1 (de) Geraet zur wafer-inspektion.
JP2006500771A (ja) 拡散層の横方向拡散の測定
CN113358607A (zh) 一种对低维半导体载流子漂移过程直接成像的方法
JP2006500773A (ja) 拡散層の横方向拡散の測定
JPS63250835A (ja) エピタキシヤルウエハの検査方法
JPH026219B2 (cg-RX-API-DMAC7.html)
JPH026218B2 (cg-RX-API-DMAC7.html)
US7361286B2 (en) Method of detecting etching end-point
JPH118438A (ja) 半導体レーザ装置の製造方法
JPS60135882A (ja) イオンビ−ム径の測定方法
JPH0943324A (ja) 磁場測定方法および磁場測定装置
US20060264005A1 (en) Silicon substrate processing method for observing defects in semiconductor devices and defect-detecting method
US4588946A (en) Method for measuring current at a p-n junction
JPH02192751A (ja) 半導体中のキャリア密度測定方法
JPH0222536B2 (cg-RX-API-DMAC7.html)
JP3653622B2 (ja) ＧａＡｓ−ＡｌＧａＡｓ超格子構造層を含む化合物半導体エピタキシャルウェハの評価方法
US4843238A (en) Method for identifying a blistered film in layered films
JP2002243642A (ja) 発光スペクトル測定装置及び測定方法
JPH06310586A (ja) 位置決め方法
JPS59119832A (ja) 電子ビ−ム露光方法
JPH01187409A (ja) 電子ビーム測長方法および装置
JPS62159423A (ja) イオン注入領域の寸法計測方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term