JPS60161393A - 単結晶薄膜周期構造を形成するための分子線エピタキシヤル成長装置 - Google Patents
単結晶薄膜周期構造を形成するための分子線エピタキシヤル成長装置Info
- Publication number
- JPS60161393A JPS60161393A JP1206284A JP1206284A JPS60161393A JP S60161393 A JPS60161393 A JP S60161393A JP 1206284 A JP1206284 A JP 1206284A JP 1206284 A JP1206284 A JP 1206284A JP S60161393 A JPS60161393 A JP S60161393A
- Authority
- JP
- Japan
- Prior art keywords
- partition plate
- substrate
- molecular beam
- thin film
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title abstract description 48
- 230000000737 periodic effect Effects 0.000 title abstract description 32
- 230000008021 deposition Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 238000005192 partition Methods 0.000 claims abstract description 47
- 239000002994 raw material Substances 0.000 claims description 24
- 210000004027 cell Anatomy 0.000 claims 1
- 210000000352 storage cell Anatomy 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 18
- 230000006866 deterioration Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 101150092569 Ctsc gene Proteins 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- FCZCIXQGZOUIDN-UHFFFAOYSA-N ethyl 2-diethoxyphosphinothioyloxyacetate Chemical compound CCOC(=O)COP(=S)(OCC)OCC FCZCIXQGZOUIDN-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1206284A JPS60161393A (ja) | 1984-01-27 | 1984-01-27 | 単結晶薄膜周期構造を形成するための分子線エピタキシヤル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1206284A JPS60161393A (ja) | 1984-01-27 | 1984-01-27 | 単結晶薄膜周期構造を形成するための分子線エピタキシヤル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60161393A true JPS60161393A (ja) | 1985-08-23 |
| JPS6247839B2 JPS6247839B2 (enExample) | 1987-10-09 |
Family
ID=11795109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1206284A Granted JPS60161393A (ja) | 1984-01-27 | 1984-01-27 | 単結晶薄膜周期構造を形成するための分子線エピタキシヤル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60161393A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2587040A1 (fr) * | 1985-09-11 | 1987-03-13 | Sharp Kk | Appareil de croissance epitaxiale par faisceaux moleculaires |
-
1984
- 1984-01-27 JP JP1206284A patent/JPS60161393A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2587040A1 (fr) * | 1985-09-11 | 1987-03-13 | Sharp Kk | Appareil de croissance epitaxiale par faisceaux moleculaires |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6247839B2 (enExample) | 1987-10-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |