JPS60157726A - Surface treatment of magnetic storage medium - Google Patents

Surface treatment of magnetic storage medium

Info

Publication number
JPS60157726A
JPS60157726A JP1256384A JP1256384A JPS60157726A JP S60157726 A JPS60157726 A JP S60157726A JP 1256384 A JP1256384 A JP 1256384A JP 1256384 A JP1256384 A JP 1256384A JP S60157726 A JPS60157726 A JP S60157726A
Authority
JP
Japan
Prior art keywords
storage medium
magnetic storage
hydrocarbon
protective film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1256384A
Other languages
Japanese (ja)
Inventor
Toshihiro Ando
敏弘 安東
Shuichi Hirai
修一 平井
Toru Nagaoka
徹 長岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP1256384A priority Critical patent/JPS60157726A/en
Publication of JPS60157726A publication Critical patent/JPS60157726A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a hard hydrocarbonaceous film having a low coefft. of kinematic friction when a hydrocarbonaceous protective film is formed on the surface of a magnetic storage medium having a magnetic metallic thin film on the surface of the substrate in a plasma decomposition and polymn. apparatus using the storage medium as one of electrodes, by introducing gas contg. hydrocarbon into the reactor and applying voltage between the electrodes under reduced pressure. CONSTITUTION:The internal pressure of an evacuated reactor is adjusted to 0.001-10Torr, preferably 0.01-10Torr with a gaseous mixture of a gaseous starting material with satd. or unsatd. hydrocarbon such as C2H2, C2H4, C2H6, CH4 or C4H10, and DC or AC voltage of 200-2,000V or high frequency voltage of 200-2,000V and 100kHz-20MHz is applied between electrodes 2, 3. Stable plasma is generated, and a highly cross-linked hydrocarbonaceous protective film is formed on the surface of a magnetic storage medium 1.

Description

【発明の詳細な説明】 本発明は磁気記憶媒体の表面処理方法、特に録画用、録
廿用あるいは゛覗算機等に用いられる磁気ドラムあるい
は磁気ディスク等の(iH磁気記憶媒体表面に炭化水素
質の保護膜を形成させろ磁気記録媒体の表面処理方法に
関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for surface treatment of magnetic storage media, particularly for treating the surface of (iH) magnetic storage media, such as magnetic drums or magnetic disks used for recording, storage, or computer viewing machines. The present invention relates to a surface treatment method for magnetic recording media to form a hydrogen-based protective film.

近年、d己録省度を向上させる目的のために、鉄、コバ
ルト、ニッケル又はこれらの合金からなる強磁性金属薄
膜を真空蒸溜、スパッタリング及びメッキなどの方法で
基体上に形成させる磁気記憶媒体の製法が提案されてい
る。これらの方法で作成された薄膜型の金属磁気記憶媒
体は高密度記録性に優れているが、これらヶ記録書生装
置に使用する場会、磁気ヘッド等と物理的に接触して高
速度に走行乞するので、耐摩耗性が必要である。このよ
うな磁気記憶媒体の耐摩耗性を向上させるために、(み
性属の表mlに5i02. Si3N4. CおよびA
1□03等の薄膜をスパッタリングなどにより形成する
ことが提案されている。しかしこれらの保護膜は硬質で
はあるが、内部応力が太きいため密着力が弱く、また摩
擦係数が太きいために保護膜か磁気ヘッドのいずれかが
摩耗や損傷し易いという欠点がある。この欠点ケ改善す
るために、これらの保護膜と潤滑剤との併用等が検討さ
れている。しかしながら、潤滑剤を併用するとスペーシ
ングロスやヘッドスティックなどの新たな問題点を生じ
易い。
In recent years, for the purpose of improving recording efficiency, magnetic storage media have been developed in which a ferromagnetic metal thin film made of iron, cobalt, nickel, or an alloy thereof is formed on a substrate by methods such as vacuum distillation, sputtering, and plating. A manufacturing method has been proposed. Thin-film metal magnetic storage media created by these methods have excellent high-density recording properties, but when used in recording/writing devices, they are required to run at high speeds by physically contacting magnetic heads, etc. Since it will be used for begging, it needs to be wear resistant. In order to improve the wear resistance of such magnetic storage media, (5i02.Si3N4.C and A
It has been proposed to form a thin film such as 1□03 by sputtering or the like. However, although these protective films are hard, they have a drawback that their adhesion is weak due to large internal stress, and that either the protective film or the magnetic head is easily worn out or damaged due to their large coefficient of friction. In order to improve this drawback, studies are being conducted on the combined use of these protective films and lubricants. However, when a lubricant is used in combination, new problems such as spacing loss and head stick tend to occur.

本発明は、これらの欠点ビ解決すること2目的とするも
のであって、磁気記憶媒体の表面に炭化水系ガスをイオ
ン化プラズマ分解重合させ 高度に架橋し、硬質で、し
かも動摩擦係数の小さい炭化水素質膜を形成させること
により、磁気記憶媒体の耐摩耗性ケ向上させると共にス
ペーシングロスやヘッドスティックなどの問題のないす
ぐれた磁気記憶媒体の弐面処理法乞提供しようとするも
のである。
The purpose of the present invention is to solve these drawbacks, and the purpose of the present invention is to apply ionized plasma decomposition polymerization of a hydrocarbon-based gas to the surface of a magnetic storage medium to form a hydrocarbon that is highly crosslinked, hard, and has a small coefficient of dynamic friction. The present invention aims to improve the wear resistance of a magnetic storage medium by forming an elementary film, and to provide an excellent second-side processing method for a magnetic storage medium that is free from problems such as spacing loss and head stick.

すなわち本発明は、基体表面に磁性金属薄膜2設けた磁
気記憶媒体Z一方の電極とし、との電極に対し、他方の
電極乞所定の間隔乞おいて配置したイオン化プラズマ分
解重合装置を用いて磁気記憶媒体の表面に炭化水素質保
護膜乞形成させる際に、炭化水素質膜有するガスを反応
器内に導入すると共に減圧下、前記電極間に電圧乞印加
すること乞特徴とする。
That is, the present invention uses an ionized plasma decomposition polymerization apparatus in which a magnetic storage medium Z having a magnetic metal thin film 2 provided on the surface of the substrate is used as one electrode, and the other electrode is placed at a predetermined distance from the other electrode. When forming the hydrocarbon protective film on the surface of the storage medium, a gas having the hydrocarbon film is introduced into the reactor and a voltage is applied between the electrodes under reduced pressure.

以下さらに本発明の詳細な説明する。The present invention will be further explained in detail below.

本発明は、イオンプラズマ分解重合装置を用いて磁気記
憶媒体の表面に炭化水素質保護膜ン形成させる際に、減
圧下電極間に電圧乞印加することを%倣とするもので、
本発明によれば磁気記憶媒体の底面に耐摩耗性にすぐれ
た高度に架橋した炭化水素質保護膜が形成させることが
できる。プラズマ中あるいは電極上での反応機構は明ら
かでないが、炭化水素含有ガス中で、炭化水素質保護膜
Y形成させる磁気記憶媒体に適当な電圧を印加するとプ
ラズマが発生し、イオン化した炭化水素が1惟およびそ
の周辺で分解、重合し、磁気記憶媒体上に架橋した炭化
水素質保護膜が形成されるものと思われる。
The present invention applies a voltage between electrodes under reduced pressure when forming a hydrocarbon protective film on the surface of a magnetic storage medium using an ion plasma decomposition polymerization apparatus.
According to the present invention, a highly crosslinked hydrocarbon protective film with excellent wear resistance can be formed on the bottom surface of a magnetic storage medium. Although the reaction mechanism in plasma or on electrodes is not clear, when an appropriate voltage is applied to a magnetic storage medium on which a hydrocarbon protective film Y is to be formed in a hydrocarbon-containing gas, plasma is generated and ionized hydrocarbons are It is thought that the decomposition and polymerization occur in and around the rainwater, forming a crosslinked hydrocarbon protective film on the magnetic storage medium.

本発明によって形成される炭化水素質保護膜は融点がな
く、溶剤に不溶なものであり、赤外分光分析によろC−
H結合の吸収が存在し、さらに元素分析結果によるc 
/ Hの比が5〜5oモル多程度のHが存在することか
ら高度に架橋した炭化水素質のものからなっていると思
われる。
The hydrocarbon protective film formed according to the present invention has no melting point, is insoluble in solvents, and has a C-
There is absorption of H bonds, and c
/H ratio of about 5 to 5 moles, it seems to be composed of highly crosslinked hydrocarbons.

また炭化水素質保護膜は非常に硬く、シかも非常に小さ
な摩擦係数をもつものである。
Furthermore, the hydrocarbon protective film is very hard and has a very small coefficient of friction.

本発明に係る炭化水素質保護膜の厚みは、以下である。The thickness of the hydrocarbon protective film according to the present invention is as follows.

200OA′la0:こえる厚みになるとスペーシング
ロスが犬きくなるので好ましくない。
200OA'la0: If the thickness exceeds 200OA'la0, the spacing loss will become severe, which is not preferable.

本発明において、磁気記憶媒体上に炭化水素質保護膜を
形成させる場合、特に下地層は必要ではないが、Au、
Pt、N1−P、NIB+ AI、Cr、Nll Rh
In the present invention, when forming a hydrocarbon protective film on a magnetic storage medium, an underlayer is not particularly required, but Au,
Pt, N1-P, NIB+ AI, Cr, Nll Rh
.

Pd+ Tin siなどの非磁性の下地層ンメッキ法
、蒸庸法などによって予め形成しておいてもよい。
It may be formed in advance by plating a non-magnetic underlayer such as Pd+Tin SI, evaporation method, or the like.

又、下地層の厚みは200OA以下が好ましく、さらに
好ましくは1000A以下である。原料ガスとC2H2
,C2H4+ C2H6,CH4,C4H1゜などの飽
和あるいは不飽和の炭化水素、C6H6+ C6H工、
などの常温、常圧で液体の炭化水素乞ガス化したもの、
又はこれらのガス状炭化水素とAr+ He、 Ne、
 H2などの炭化水嵩以外のガスとの混合ガスである。
Further, the thickness of the base layer is preferably 200 OA or less, more preferably 1000 Å or less. Raw material gas and C2H2
, C2H4+ Saturated or unsaturated hydrocarbons such as C2H6, CH4, C4H1゜, C6H6+ C6H,
Hydrocarbons that are liquid at room temperature and pressure are gasified, such as
Or these gaseous hydrocarbons and Ar+ He, Ne,
It is a mixed gas with gases other than hydrocarbons such as H2.

次に、これら原料ガスン用いて炭化水素質保護膜を形成
する条件について説明する。反応容器内゛ の圧力とし
ては0.001〜1Q Torrが好ましくは0.01
〜10 Torrである。
Next, conditions for forming a hydrocarbon protective film using these raw material gases will be explained. The pressure inside the reaction vessel is preferably 0.001 to 1Q Torr.
~10 Torr.

また、′電極間に200〜2000V(7)直流(DC
)′電圧または交流(Ac)4亀圧乞印加するか、又は
200〜2000Vの100 KHz 〜20 MHz
の高周波゛屯圧ン印加する。このようにすれば安定した
プラズマが発生し、電極上に高度に架橋した炭化水素質
保護膜が形成される。
In addition, 200 to 2000 V (7) direct current (DC
)' Voltage or alternating current (Ac) 4 voltage applied or 200-2000V 100 KHz ~ 20 MHz
A high frequency pressure is applied. In this way, a stable plasma is generated and a highly crosslinked hydrocarbon protective film is formed on the electrode.

以下に本発明の実施例’Y6げて、さらに共外的に説明
する。
The present invention will be further explained in detail below using Example 'Y6.

実施例1 (1) メッキディスクへの製造 直径9(、′In1厚み2朋の鏡面研摩したアルミ板上
に非磁性N1−P Y 50μm厚に無電解メッキした
後、60μm厚まで鏡面研摩し、更にその上に第1表に
示すメッキ液乞用い、PH7,5液温75°Cの条件下
無電解メッキ7行い厚さ0.1μm組成C3−Ni−P
(Co : 80%+ Nl : 15係、P:5%)
の磁性膜(以下メッキディスクAという)を作成した。
Example 1 (1) Production of a plated disk After electroless plating with non-magnetic N1-PY to a thickness of 50 μm on a mirror-polished aluminum plate with a diameter of 9 mm and a thickness of 2 mm, mirror polishing was performed to a thickness of 60 μm. Furthermore, using the plating solution shown in Table 1, electroless plating was performed under conditions of pH 7.5 and solution temperature 75°C to a thickness of 0.1 μm, composition C3-Ni-P.
(Co: 80% + Nl: 15 sections, P: 5%)
A magnetic film (hereinafter referred to as plated disk A) was prepared.

なお無電解メッキの前処理としては日本カニゼン(株)
の商品名1シユーマセンシタイず−」及び商品名1シユ
ーマアクチベーター」Z使用した。
Nippon Kanigen Co., Ltd. is used as a pre-treatment for electroless plating.
The product name 1 "Schuma Sensitizer" and the product name 1 "Schuma Activator" Z were used.

第1表 (単位9/沼) 第1図に示すイオン化プラズマ分解重合装置を用いて、
各種炭化水素ガスン原料として第2表に示す条件でメッ
キディスク穴上に80OA厚の高度に架橋した炭化水素
質保護膜を形成した。
Table 1 (Unit 9/Numa) Using the ionization plasma decomposition polymerization apparatus shown in Figure 1,
A highly cross-linked hydrocarbon protective film having a thickness of 80 OA was formed on the plated disk hole under the conditions shown in Table 2 using various hydrocarbon gas raw materials.

比較のために(株)徳田製作所製商品名1 cFs−3
ES型」スパッタリング装置を用い、メッキディスク穴
上にカーボン(純度99.99%)および5iO2(純
度99.99%)をターケゞットとして烏周波スパッタ
リングにより、それぞれカーボン膜(実験/167)S
102膜(実験瀕8)Y800Aの厚に作成した。これ
らの評価物性7第6表に示す。
For comparison, product name 1 cFs-3 manufactured by Tokuda Seisakusho Co., Ltd.
Carbon films (Experiment/167)S were formed on the plating disk holes using a ``ES type'' sputtering device by using oscilloscope sputtering using carbon (purity 99.99%) and 5iO2 (purity 99.99%) as targets.
102 film (experimental stage 8) was made to a thickness of Y800A. These evaluation physical properties are shown in Table 6.

第 2 表 第6表 実施例2 同径9cm、厚み6韮のABS樹脂(電気化学工業(株
)商品名1デンカABS−ME l) )板上に非磁性
N1−P乞50μm厚に無電解メッキした後、厚さみ6
0μmまで鏡面研摩し、更にその上に第4表に示すメッ
キ液乞用い、pH7,5M温75 =Cの朱件下無電解
メッキ7行い、厚さ0.1μm組成を作成した。なおC
o−N1−P (Co : 80%、Ni:15%。
Table 2 Table 6 Example 2 Non-magnetic N1-P was applied to a 50 μm thick plate of ABS resin (manufactured by Denki Kagaku Kogyo Co., Ltd., trade name: 1Denka ABS-ME) with the same diameter of 9 cm and a thickness of 6 mm. After plating, thickness 6
After mirror polishing to 0 .mu.m, electroless plating was carried out using the plating solution shown in Table 4 under conditions of pH 7, 5M and temperature 75=C to create a composition having a thickness of 0.1 .mu.m. Furthermore, C
o-N1-P (Co: 80%, Ni: 15%.

P二5%)の磁性膜(以下メッキディスクBという)7
無電解メッキの前処理としては日本カニゼン(a)の商
品名1シューマセンシタイサ゛−」及び商品名1シユー
マアクチベーター」7使用した。
P25%) magnetic film (hereinafter referred to as plated disk B) 7
As a pretreatment for electroless plating, Nippon Kanigen (a)'s trade name 1 Schumer Sensitizer' and trade name 1 Schumer Activator'7 were used.

1 4 □1位ヮ/、) 第1図に下すイオン化プラズマ分解乗合装置ケ用いて、
各練炭化水素ガスを原料として、メッキディスクB上に
800 AJ早の炭化水素保護膜乞形成した。その形成
条件7第5表に示す。
1 4 □1st place ヮ/,) Using the ionization plasma decomposition device shown in Figure 1,
Using each briquette hydrocarbon gas as a raw material, a hydrocarbon protective film of 800 AJ was formed on the plating disk B. The formation conditions 7 are shown in Table 5.

比較のために、(株)徳田製作所製間品名ICFS−S
ES型スバノタリ/グ装置」ン用い、メッキディスクB
上にカーボン(純度99.99 % )および5i02
 (純度99.99%)ンターケゞットとして高周波ス
パッタリングにより、それぞれカーボン膜(央I荻/+
613 ン、5i021模(実験yf614 )乞8[
JDAに施したものを作成した。
For comparison, product name ICFS-S manufactured by Tokuda Seisakusho Co., Ltd.
Plating disk B using ES type Subanotari/Ging device
Carbon (99.99% purity) and 5i02 on top
(purity 99.99%) Each carbon film (Central Iogi/+
613, 5i021 model (experiment yf614)
I created the version applied to JDA.

以下にその評価結果乞め6表に示す。The evaluation results are shown in Table 6 below.

第 5 表 第6表 実施例6 天施例1で得たメッキディスク穴上に、(株)徳田製作
所製曲品名I CFS−8ES型スノぐツタリング装置
」を用い、S、i (純度99.99係)、およびCr
 (純度99.99襲)ンターゲットとして、それぞれ
S1膜、cr膜の下地ノ曽乞200M厚に形成し、更に
その上に第1図に示すイオン化プラズマ分解重合装置を
用いて、炭化水素ガスの槙翅ン変えて800λの筒度に
架橋した炭化水素−7形成した。
Table 5 Table 6 Example 6 The plated disk hole obtained in Example 1 was coated with S, i (purity 99. Section 99), and Cr.
(Purity: 99.99%) As a target, a 200M thick base layer of S1 film and Cr film was formed, and then hydrocarbon gas was added on top of it using the ionization plasma decomposition polymerization apparatus shown in Figure 1. Hydrocarbon-7 cross-linked with a cylinder diameter of 800λ was formed by changing the cylindrical shape.

以下にその形成架杆及びその精米7弟7表及び第8表に
ボす。
Below are the forming rods and their 7 polished rice Tables 7 and 8.

第 7 衣 第 8 表 実施例4 第1図に示すイオン化プラズマ分解電合装甑乞用いて、
C2H6ガスを原料として、実施例1で得たメッキディ
スク穴上に条件乞食えて800A厚の尚度に架橋した炭
化水素膜を形成した。以下に七の形成条件及び評価結果
ンそれぞれ第9表及び第10表に示す。
No. 7 Table No. 8 Example 4 Using the ionized plasma decomposition device shown in Fig. 1,
Using C2H6 gas as a raw material, a highly crosslinked hydrocarbon film having a thickness of 800 A was formed on the plated disk hole obtained in Example 1 under certain conditions. Seven formation conditions and evaluation results are shown below in Tables 9 and 10, respectively.

第 9 表 (E) RF −Radio Frequencyの略
第10表 なお実施例及び比較例の評価物性の測定は次の方法によ
った。
Table 9 (E) Abbreviation of RF-Radio Frequency Table 10 The evaluation physical properties of Examples and Comparative Examples were measured by the following method.

1)動摩擦係数測定 第2図に示す構造の摺動物性測定装置を用い、ヘッドは
2 amφサファイア球、ヘッド荷重5μとし、相対速
度5m1secの条件下で行った。
1) Measurement of Dynamic Friction Coefficient Measurement was carried out using a sliding property measuring device having the structure shown in Fig. 2, using a sapphire ball with a diameter of 2 am, a head load of 5 μ, and a relative speed of 5 ml/sec.

2)摺動回数測定 第2図に示す装置を用い、ヘッド2 mmφサファイア
球、ヘッド荷i1o、yとし、相対速度10m1sec
の条件下保岐膜が破壊するまでの回数ン摺動回数とした
2) Measuring the number of sliding movements Using the device shown in Figure 2, the head is a 2 mmφ sapphire ball, the head loads are i1o, y, and the relative speed is 10 m1sec.
The number of times the Hoki membrane was slid under these conditions was defined as the number of times it would take to break.

3)C8S(コンタクト・スタート・ストップ)テスト ヘッドはよりM −3350タイプ、ヘッド句i9.8
.9とし、回鴨速度3600 r、p、m、。
3) C8S (Contact Start Stop) test head is M-3350 type, head phrase i9.8
.. 9, and the rotation speed is 3600 r, p, m.

0N−OFFろOsecサイクルの条件下ヘッドクラシ
ュが発生するまでのサイクル数”< css回数とした
Under the condition of 0N-OFF Osec cycle, the number of cycles until a head crash occurs is set to be ``number of cycles''<css number.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の実施例に用いる装置の説明図、第2
図は磁気記録媒体の動摩際係数及び慴動回数測定装置の
説明図である。 何カ、 1:磁気記憶媒体 10:磁気記憶媒体2:電極 11
°ホルダー 3:電極 12:ザファイア球 4:反応容器 13二板バネ 5:反応容器台 14°歪r″′−シ ロ:ガス供給口 15 : xyステージ7:排気管 
16:モーター 17:架台
FIG. 1 is an explanatory diagram of the apparatus used in the embodiment of the present invention, and FIG.
The figure is an explanatory diagram of a device for measuring the dynamic friction coefficient and the number of sliding motions of a magnetic recording medium. How many? 1: Magnetic storage medium 10: Magnetic storage medium 2: Electrode 11
°Holder 3: Electrode 12: Zaphire bulb 4: Reaction vessel 13 Two-plate spring 5: Reaction vessel stand 14° strain r″'-shiro: Gas supply port 15: xy stage 7: Exhaust pipe
16: Motor 17: Frame

Claims (1)

【特許請求の範囲】[Claims] 基体表面に磁性金属薄膜2設けた磁気記憶媒体ン一方の
電極とし、この電極に対し、他方の電極乞所定の間隔を
おいて配置したイオン化プラズマ分解重合装置を用いて
、磁気記憶媒体の表面に炭化水素質保護膜を形成させる
除に、炭化水系含有ガス乞糸内に導入すると共に減圧下
、前記電極間に電圧馨印加するとと乞特徴とする磁気記
憶媒体の表面処理方法。
A magnetic storage medium with a magnetic metal thin film 2 provided on the surface of the substrate is used as one electrode, and the other electrode is placed at a predetermined distance from this electrode using an ionization plasma decomposition polymerization device. A method for surface treatment of a magnetic storage medium, which comprises introducing a hydrocarbon-containing gas into a gas line and applying a voltage between the electrodes under reduced pressure, before forming a hydrocarbon protective film.
JP1256384A 1984-01-26 1984-01-26 Surface treatment of magnetic storage medium Pending JPS60157726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1256384A JPS60157726A (en) 1984-01-26 1984-01-26 Surface treatment of magnetic storage medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1256384A JPS60157726A (en) 1984-01-26 1984-01-26 Surface treatment of magnetic storage medium

Publications (1)

Publication Number Publication Date
JPS60157726A true JPS60157726A (en) 1985-08-19

Family

ID=11808810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1256384A Pending JPS60157726A (en) 1984-01-26 1984-01-26 Surface treatment of magnetic storage medium

Country Status (1)

Country Link
JP (1) JPS60157726A (en)

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