JPS60155668A - Formation of protective hydrocarbon film on surface of magnetic storage medium - Google Patents

Formation of protective hydrocarbon film on surface of magnetic storage medium

Info

Publication number
JPS60155668A
JPS60155668A JP59012561A JP1256184A JPS60155668A JP S60155668 A JPS60155668 A JP S60155668A JP 59012561 A JP59012561 A JP 59012561A JP 1256184 A JP1256184 A JP 1256184A JP S60155668 A JPS60155668 A JP S60155668A
Authority
JP
Japan
Prior art keywords
film
magnetic storage
storage medium
hydrocarbon
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59012561A
Other languages
Japanese (ja)
Other versions
JPH0424426B2 (en
Inventor
Toshihiro Ando
敏弘 安東
Toru Nagaoka
徹 長岡
Shuichi Hirai
修一 平井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP59012561A priority Critical patent/JPS60155668A/en
Publication of JPS60155668A publication Critical patent/JPS60155668A/en
Publication of JPH0424426B2 publication Critical patent/JPH0424426B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605Carbon
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/72Protective coatings, e.g. anti-static or antifriction
    • G11B5/727Inorganic carbon protective coating, e.g. graphite, diamond like carbon or doped carbon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

PURPOSE:To form a protective hard hydrocarbon film having a low coefft. of friction and superior wear resistance on the surface of a magnetic storage medium by carrying out sputtering using a carbon target in an atmosphere contg. a specified gaseous hydrocarbon. CONSTITUTION:A protective hard hydrocarbon film is formed on the surface of a magnetic storage medium by carrying out sputtering using a carbon target in an atmosphere contg. one or more kinds of gaseous hydrocarbons such as CH4, C2H4, C2H6, C3H8 and C6H6. The hard hydrocarbon of the film contains a large number of C-H bonds, and the film has a low coefft. of kinematic friction, small internal stress and high adhesive strength. The film shows superior wear resistance without using a lubricant.

Description

【発明の詳細な説明】 本発明は、磁気記憶媒体表面に炭化水素保護膜を形成す
る方法、特に録画、録音、電算機等に用いられる磁気ド
ラム又は磁気ディスク等の磁気記憶媒体表面にスパッタ
リングにより炭化水素保護膜を形成する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of forming a hydrocarbon protective film on the surface of a magnetic storage medium, and particularly to a method of forming a hydrocarbon protective film on the surface of a magnetic storage medium such as a magnetic drum or magnetic disk used for recording, recording, computers, etc. by sputtering. The present invention relates to a method of forming a hydrocarbon protective film.

近年、記録密度を向上させるため真空蒸着、スパッタリ
ング、及びメッキ等の方法により、鉄、コバルト、ニッ
ケル又はこれらの合金からなる強磁性金属薄膜を基体上
に形成する方法が提案されている。しかし、これらの方
法で作成された薄膜型の金属磁気記憶媒体は高密度記録
性が優れているが、例えば記録再生装置に使用する場合
、磁気記−p1.媒体と磁気ヘッド等とが物理的に接触
し、高速度走行をするので、長期使用による耐摩耗性に
問題がある。
In recent years, in order to improve recording density, methods have been proposed in which a ferromagnetic metal thin film made of iron, cobalt, nickel, or an alloy thereof is formed on a substrate by methods such as vacuum evaporation, sputtering, and plating. However, although the thin-film metal magnetic storage media produced by these methods have excellent high-density recording properties, for example, when used in a recording/reproducing device, magnetic recording-p1. Since the medium and the magnetic head are in physical contact and run at high speed, there is a problem in wear resistance due to long-term use.

これらを改善するために、磁性層の表面にSto 2 
、SLB N4 、C%A!、o、のスパッタ蒸着膜な
どを形成する方法が知られているが、これらの保護膜は
硬質ではあるが、摩擦係数が大きいために保護膜又は磁
気ヘッドのいずれかが摩耗したシ、損傷したシするので
、さらにこれらの保護膜と潤滑剤とを併用する方法がン
グロスやヘッドスティックなどの新たな問題点を生じ易
い欠点がある。
In order to improve these problems, Sto 2 is added to the surface of the magnetic layer.
, SLB N4 , C%A! , o, etc. are known, but although these protective films are hard, they have a large coefficient of friction and can cause wear or damage to either the protective film or the magnetic head. Furthermore, the method of using these protective films and lubricants in combination has the disadvantage that new problems such as gloss and head stick tend to occur.

本発明は、これらの欠点を改善することを目的とするも
のであって、磁気記憶媒体の保護膜として、特定の炭化
水素から選ばれたエイフなどの問題が少ないすぐれた一
磁気記4・棗媒体が得られる磁気記4t、媒体表面に炭
化水素保護膜を形成させる方法を提供し、ようとするも
のである。
The present invention is aimed at improving these drawbacks, and uses an excellent magnetic recording material 4, Natsume, etc., which is selected from specific hydrocarbons and has fewer problems, as a protective film for magnetic storage media. The present invention aims to provide a magnetic recording medium 4t from which a medium can be obtained and a method for forming a hydrocarbon protective film on the surface of the medium.

すなわち本発明は磁気記+1東媒体表面にスパックリン
グ法により炭化水素保護膜を形成させる際に、CH41
,C!H< 、C2H6、C3H@、CaHa (ベン
ゼン)等の炭化水素から選ばれた1種以上のガス雰囲気
下、炭素をターゲットとして用いスパッタリングするこ
とを特徴とする。
That is, the present invention provides a method for forming a hydrocarbon protective film on the surface of a magnetic recording medium using CH41
,C! It is characterized by sputtering using carbon as a target in an atmosphere of one or more gases selected from hydrocarbons such as H<, C2H6, C3H@, and CaHa (benzene).

以下さらに、本発明の詳細な説明する。The present invention will be further explained in detail below.

本発明は炭素をターゲットとして用いスパッタリング法
により磁気記・胃、媒体の表面に炭化水素膜を形成させ
る方法であるが、本発明の雰囲気として用いられる炭化
水素は0M4、C,H,\C2HB s C2H8・C
2H4及ffcaHa等の炭化水素であるが、これらを
1種以上含有するガスであればよく、又これらのガスの
みであってもよいが、アルゴン(Ar) 、ヘリウム(
He)及び水素(H2) などのガスを併用しても差支
えはない。
The present invention is a method of forming a hydrocarbon film on the surface of a magnetic recording medium by sputtering using carbon as a target, but the hydrocarbons used as the atmosphere of the present invention are 0M4, C, H, \C2HB s. C2H8・C
Hydrocarbons such as 2H4 and ffcaHa may be used as long as they contain one or more of these gases, or only these gases, but argon (Ar), helium (
There is no problem in using gases such as He) and hydrogen (H2) together.

本発明において炭素をターゲットとして用い、雰囲気ガ
スとして前記炭化水素から選ばれた1種以上を含有する
ガス雰囲気中でスパッタリングを行なうと、C−H結合
を多量に含む硬質の炭化水素被膜が形成される。このよ
うにして得られた保護膜は動摩擦係数が小さく、かつ内
部応力が小さいために密着力が強固である。 、従 来の炭素をターゲットとして用いるスパッタリング法は
雰囲気ガスとしてAr % He 等のガスを単独で用
いるので、硬質の炭素保護膜が形成されるが、この保護
膜中にはC−H結合あるいは水素原子は検出されないか
、あるいは検出されても極く僅かであるので、その内部
応力が大きいために、密着力が弱く、さらに動摩擦係数
も大きくなるので好ましくないからである。
In the present invention, when carbon is used as a target and sputtering is performed in a gas atmosphere containing one or more selected from the above hydrocarbons as an atmospheric gas, a hard hydrocarbon film containing a large amount of C-H bonds is formed. Ru. The protective film thus obtained has a small coefficient of dynamic friction and low internal stress, so it has strong adhesion. In the conventional sputtering method using carbon as a target, a gas such as Ar % He is used alone as the atmospheric gas, so a hard carbon protective film is formed, but this protective film contains C-H bonds or hydrogen atoms. This is because the internal stress is large, and the adhesion force is weak, and the coefficient of dynamic friction is also large, which is undesirable.

磁気記I僚、媒体に対する保護膜の形成条件としては前
記した雰囲気ガス以外にガス圧力、ノご:イ )− スパッタリング電源、モ云≠ス電圧、及び反応時間があ
る。
In addition to the above-mentioned atmospheric gas, the conditions for forming the protective film on the magnetic recorder and medium include gas pressure, sputtering power source, mose voltage, and reaction time.

これらの条件はその装置の形状大きさ等によって変るの
で特に限定することはできないがいずれも公知の条件で
行うことができる。
Since these conditions vary depending on the shape and size of the device, they cannot be particularly limited, but any known conditions can be used.

なお、本発明のスパッタリング工程において炭化水素被
膜を被着されるべき磁気記憶媒体には電圧を印加しなく
ても良いが、電圧を印加することも可能である。
Although it is not necessary to apply a voltage to the magnetic storage medium to which the hydrocarbon film is to be applied in the sputtering process of the present invention, it is also possible to apply a voltage.

以下実施例をあげてさらに本発明を具体的に説明する。EXAMPLES The present invention will be explained in more detail below with reference to Examples.

実施例1 メッキディスクの製造 直径9crn1厚み2mの鏡面研摩したアルミ板上に非
磁性Ni −P を50μm厚に無電解メッキした後、
30μm厚まで鏡面研摩し、更にその上に第1表に示す
メッキ液を用い、メッキ条件としてCo−N1−P (
Co : 809b−Nt:xi5n、P:5%)の磁
性膜をo、 iμm厚となるようにpn 7.5 、液
温75℃で無電解メッキ(以下メッキディスクAという
)シタ。
Example 1 Production of a plated disk After non-magnetic Ni-P was electrolessly plated to a thickness of 50 μm on a mirror-polished aluminum plate with a diameter of 9 crn and a thickness of 2 m,
Mirror polishing was performed to a thickness of 30 μm, and the plating solution shown in Table 1 was used on top of the mirror polishing, and the plating conditions were Co-N1-P (
A magnetic film of Co: 809b-Nt: xi5n, P: 5%) was electrolessly plated (hereinafter referred to as plating disk A) at a liquid temperature of 75° C. to a thickness of 0.1 μm.

なお無電解メッキの前処理する際に、日本カニゼン(株
1の商品名「シューマセンシタイザー」及び商品名「シ
ューマアクチベーター」を使用した。
In addition, during the pretreatment for electroless plating, Nippon Kanigen Co., Ltd. 1's product name "Suma Sensitizer" and product name "Suma Activator" were used.

バッタリング装置(商品名1’−CF8−8ESJ)ま
たターゲットとしては日立化成(株)の高密度カーボン
(商品名「HcB −18J )を用い、第2表に示す
条件下でスパッタリングを行ない、メッキディスクAの
表面に炭化水素保護膜を80OA厚に形成した。また比
較のために第2表に示す条件(実験N18)でスパッタ
リングを行ない、メッキディスクAの表面に炭素膜を8
0OA厚に形成した。
Using a sputtering device (product name 1'-CF8-8ESJ) and high-density carbon (product name "HcB-18J") manufactured by Hitachi Chemical Co., Ltd. as a target, sputtering was performed under the conditions shown in Table 2. A hydrocarbon protective film was formed on the surface of plated disk A to a thickness of 80 OA.For comparison, sputtering was performed under the conditions shown in Table 2 (Experiment N18), and a carbon film of 80 OA thick was formed on the surface of plated disk A.
It was formed to have a thickness of 0OA.

第 3 表 なお第3表に示した物性の測定は次の方法によった。Table 3 The physical properties shown in Table 3 were measured by the following methods.

1)動摩擦係数測定 第1図に示す回転装置を用いて測定した。1) Dynamic friction coefficient measurement The measurement was carried out using the rotating device shown in FIG.

ヘッド:2■φサファイア球。Head: 2■φ sapphire ball.

ヘッド荷重:5II 相対速度:5町偽。Head load: 5II Relative speed: 5 towns false.

2)摺動回数測定 第1図の装置を用いて保護膜が破壊するまでの摺動回数
を測定した。
2) Measurement of the number of sliding movements The number of sliding movements until the protective film was destroyed was measured using the apparatus shown in FIG.

ヘッド=2調φザファイア球。Head = 2-tone φ Zafire ball.

ヘッド荷重:10p 相対速K : 10 m/aec 3)C8S(コンタクト・スタート・ストップ)テスト 固定ディスクドライブ装置を用いて、ヘッドクラッシュ
が発生するまでのサイクル数を測定した。
Head load: 10 p Relative speed K: 10 m/aec 3) C8S (Contact Start Stop) Test Using a fixed disk drive device, the number of cycles until head crash occurred was measured.

ヘッド: IBM−3350タイプ、 ヘッド荷重:9.8g。Head: IBM-3350 type, Head load: 9.8g.

回転速度:3600r、I)、m、1 ON−OFF 30秒サイクル。Rotation speed: 3600r, I), m, 1 ON-OFF 30 second cycle.

実施例2 0、5 tn 厚のシリコンウェハー上に、反応時間を
75分とした以外は実験Nalと同じ条件で行い炭化水
素膜を1μm厚で得た。
Example 2 A hydrocarbon film with a thickness of 1 μm was obtained on a silicon wafer with a thickness of 0.5 tn under the same conditions as in the experiment Nal except that the reaction time was 75 minutes.

この炭化水素膜を施したシリコンウエハ−の透過型赤外
分光分析の結果を第2図に示す。
FIG. 2 shows the results of transmission infrared spectroscopic analysis of the silicon wafer coated with this hydrocarbon film.

第2図に示すように2870,2920゜2960.1
420および1375cW1”の吸収よシ、この炭化水
素膜中には明らかにC−H結合が存在することが確認さ
れた。
As shown in Figure 2, 2870, 2920°2960.1
420 and 1375 cW1'' absorption clearly confirmed the presence of C--H bonds in this hydrocarbon film.

比較例 0、5 on厚のシリコンウエノ・−上に、反応時間を
87.5分とした以外は実験N[L8と同じ条件で行い
炭素膜を1μm厚で得た。
Comparative Examples 0 and 5 A carbon film with a thickness of 1 μm was obtained on a 1 μm thick silicone film under the same conditions as in Experiment N[L8, except that the reaction time was 87.5 minutes.

この炭素膜を施したシリコンウェハーの透過型赤外分光
分析の結果を第3図に示す。第3図によればこの炭素膜
中にはC−H結合の存在が認められなかった。
FIG. 3 shows the results of transmission infrared spectroscopic analysis of the silicon wafer coated with this carbon film. According to FIG. 3, no C--H bond was observed in this carbon film.

【図面の簡単な説明】[Brief explanation of drawings]

図面は本発明の実施例及び比較例に用いる装置を示すも
のであって、第1図は動摩擦係数及び摺動回数測定装置
の説明図、第2図及び第3図はそれぞれ実施例2及び比
較例によって作成されたシリコンウェハー上の保護膜の
波数と透過率との関係図である。 付号 1・・・磁気記憶媒体 2・・・ホルダー 3・・・サファイア球 4・・・板バネ 5・・・歪ゲージ 6・・・XYステージ 7・・・モーター 8・・・架台 特許出願人 電気化学工業株式会社 遁敗 〔、:1 第3図 :、【秋飄−1
The drawings show devices used in Examples and Comparative Examples of the present invention; FIG. 1 is an explanatory diagram of the dynamic friction coefficient and sliding number measuring device, and FIGS. 2 and 3 are examples of Example 2 and Comparative Example, respectively. FIG. 2 is a diagram showing the relationship between wave number and transmittance of a protective film on a silicon wafer prepared by way of example. Number 1... Magnetic storage medium 2... Holder 3... Sapphire bulb 4... Leaf spring 5... Strain gauge 6... XY stage 7... Motor 8... Frame patent application People Denki Kagaku Kogyo Co., Ltd. Tofu [,:1 Figure 3:, [Autumn-1]

Claims (1)

【特許請求の範囲】[Claims] 磁気記憶媒体表面にスパッタリング法により炭化水素保
護膜を形成させる際に、CH,、ターゲットとして用い
スパッタリングすることを特徴とする磁気記憶媒体表面
に炭化水素保護膜を形成する方法。
A method for forming a hydrocarbon protective film on the surface of a magnetic storage medium, the method comprising using CH as a target for sputtering when forming the hydrocarbon protective film on the surface of the magnetic storage medium by sputtering.
JP59012561A 1984-01-26 1984-01-26 Formation of protective hydrocarbon film on surface of magnetic storage medium Granted JPS60155668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59012561A JPS60155668A (en) 1984-01-26 1984-01-26 Formation of protective hydrocarbon film on surface of magnetic storage medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59012561A JPS60155668A (en) 1984-01-26 1984-01-26 Formation of protective hydrocarbon film on surface of magnetic storage medium

Publications (2)

Publication Number Publication Date
JPS60155668A true JPS60155668A (en) 1985-08-15
JPH0424426B2 JPH0424426B2 (en) 1992-04-27

Family

ID=11808755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59012561A Granted JPS60155668A (en) 1984-01-26 1984-01-26 Formation of protective hydrocarbon film on surface of magnetic storage medium

Country Status (1)

Country Link
JP (1) JPS60155668A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0230911A2 (en) * 1986-01-18 1987-08-05 Hitachi Maxell Ltd. Magnetic recording medium
JPS63168836A (en) * 1986-12-31 1988-07-12 バスフ アクチェンゲゼルシャフト Manufacture of disc-shaped magnetic recording carrier
US4778582A (en) * 1987-06-02 1988-10-18 International Business Machines Corporation Process for making a thin film metal alloy magnetic recording disk with a hydrogenated carbon overcoat
US4983421A (en) * 1986-09-02 1991-01-08 Fuji Photo Film Co., Ltd. Method for producing magnetic recording media
US5045165A (en) * 1990-02-01 1991-09-03 Komag, Inc. Method for sputtering a hydrogen-doped carbon protective film on a magnetic disk
US6367924B1 (en) 1999-01-11 2002-04-09 Sharp Kabushiki Kaisha Thermally assisted magnetic recording medium

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5321901A (en) * 1976-08-11 1978-02-28 Fujitsu Ltd Formation of carbonized protective film for magnetic recording medium
JPS5321902A (en) * 1976-08-11 1978-02-28 Fujitsu Ltd Formation of carbonized protective film for magnetic recording medium
JPS53143206A (en) * 1977-05-18 1978-12-13 Nec Corp Magnetic disc
US4277540A (en) * 1971-05-03 1981-07-07 Aine Harry E Thin film magnetic recording medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277540A (en) * 1971-05-03 1981-07-07 Aine Harry E Thin film magnetic recording medium
JPS5321901A (en) * 1976-08-11 1978-02-28 Fujitsu Ltd Formation of carbonized protective film for magnetic recording medium
JPS5321902A (en) * 1976-08-11 1978-02-28 Fujitsu Ltd Formation of carbonized protective film for magnetic recording medium
JPS53143206A (en) * 1977-05-18 1978-12-13 Nec Corp Magnetic disc

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0230911A2 (en) * 1986-01-18 1987-08-05 Hitachi Maxell Ltd. Magnetic recording medium
US4983421A (en) * 1986-09-02 1991-01-08 Fuji Photo Film Co., Ltd. Method for producing magnetic recording media
JPS63168836A (en) * 1986-12-31 1988-07-12 バスフ アクチェンゲゼルシャフト Manufacture of disc-shaped magnetic recording carrier
US4778582A (en) * 1987-06-02 1988-10-18 International Business Machines Corporation Process for making a thin film metal alloy magnetic recording disk with a hydrogenated carbon overcoat
EP0293662A2 (en) * 1987-06-02 1988-12-07 International Business Machines Corporation A process for making a thin film metal alloy magnetic recording disk with a hydrogenated carbon overcoat
US5045165A (en) * 1990-02-01 1991-09-03 Komag, Inc. Method for sputtering a hydrogen-doped carbon protective film on a magnetic disk
US5397644A (en) * 1990-02-01 1995-03-14 Komag, Incorporated Magnetic disk having a sputtered hydrogen-doped carbon protective film
US6367924B1 (en) 1999-01-11 2002-04-09 Sharp Kabushiki Kaisha Thermally assisted magnetic recording medium

Also Published As

Publication number Publication date
JPH0424426B2 (en) 1992-04-27

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