JPS60154705A - Surface acoustic wave element - Google Patents

Surface acoustic wave element

Info

Publication number
JPS60154705A
JPS60154705A JP1005084A JP1005084A JPS60154705A JP S60154705 A JPS60154705 A JP S60154705A JP 1005084 A JP1005084 A JP 1005084A JP 1005084 A JP1005084 A JP 1005084A JP S60154705 A JPS60154705 A JP S60154705A
Authority
JP
Japan
Prior art keywords
electrode
resist
cross
pad electrode
50mum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1005084A
Other languages
Japanese (ja)
Inventor
Koji Oda
小田　幸司
Seiichi Ogawa
誠一 小川
Satoshi Wakamori
若森　聡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1005084A priority Critical patent/JPS60154705A/en
Publication of JPS60154705A publication Critical patent/JPS60154705A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To eliminate defect of short-circuit due to coating unevenness of resist generated at a bonding part of both electrodes even if a cross electrode part is formed after a pad electrode part is formed by separating the pad electrode and the cross electrode by >=50mum. CONSTITUTION:After the pad electrode 1 for wire connection is formed on a substrate 5, the cross electrode 6 is formed while being separated from the pad electrode 1 by >=50mum so as to form an input conversion section 2, an output conversion section 3 and a shield electrode 4. In the process applying the resist 7 after Al vapor deposition of the cross electrode 6, although the film thickness of the resist is made thicker at the bonding part between the pad electrode 1 and the cross electrode 6 due to step difference, since uneven coating of the resist is produced at a thickness of 20-30mum, the shortcircuit defect is not caused even if the uneven coating of the resist is caused by parting both the electrodes by >=50mum.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は弾性表面波素子に関する。[Detailed description of the invention] [Field of application of the invention] The present invention relates to a surface acoustic wave device.

〔発明の背景〕[Background of the invention]

従来の２層構造のＳＡＷフィルタにおいては、。 In the conventional two-layer structure SAW filter.

１Ｎ目にＩＩ）Ｔ電極を形成し、２層目にＰＡＤ電極を
形成するりフトオフ法が行なわれていたが、この手法で
は１作業性に難点がある上にパッド電極部の密着性が不
安定で歩留りを低下させる要因となっていた。A foot-off method has been used in which a II) T electrode is formed on the 1N layer and a PAD electrode is formed on the second layer, but this method has problems in the first workability and the adhesion of the pad electrode part is poor. This was a factor in reducing stability and yield.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、リフトオフ法とは異なる電極形成法を
用いることができる弾性表面波素子を提供するにある。An object of the present invention is to provide a surface acoustic wave device that can use an electrode formation method different from the lift-off method.

〔発明の概要〕[Summary of the invention]

本発明では、パッド電極部と交叉電極部とを５０μｍ以
上隔離し、パッド電極部形成の後に交叉電極部を形成し
ても両電極部の接合部に発生するレジストの盛りとりに
基因する短絡欠陥が発生しないようにしたものである。In the present invention, the pad electrode part and the cross electrode part are separated by 50 μm or more, and even if the cross electrode part is formed after the pad electrode part is formed, the short circuit defect caused by the buildup of resist that occurs at the junction of both electrode parts. This is to prevent this from occurring.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明を図とともに説明する。 Hereinafter, the present invention will be explained with reference to the drawings.

本例は１弾性表面波素子を４００　ＭＨｚ帯で使用する
場合交叉電極部は線巾／μｍ、間隔１μｍというような
高精度パターンニングが必要となる。In this example, when one surface acoustic wave element is used in the 400 MHz band, high-precision patterning is required for the intersecting electrode portion with a line width/μm and an interval of 1 μm.

第１図は、従来例を示し、１はパッド電極部。FIG. 1 shows a conventional example, where 1 indicates a pad electrode section.

２は入力変換部、３は出力変換部、４はシールド電極、
５は圧電基板、６は交叉電極部である。2 is an input conversion section, 3 is an output conversion section, 4 is a shield electrode,
5 is a piezoelectric substrate, and 6 is a cross electrode section.

パッド電極部１と交叉電極部６が近接しており。The pad electrode section 1 and the cross electrode section 6 are close to each other.

第２図の断面図に示す様に基板５上にパッド電極部１．
交叉電極部６を順次形成して行（過程で、交叉電極部６
のＡｌ蒸着後のレジスト７を塗布する工程において段差
によりレジストの膜厚がパッド電極部１と交叉電極部６
との接合部において他部より厚くなる（塗布ムラを起こ
す）。As shown in the cross-sectional view of FIG. 2, pad electrode portions 1.
The intersecting electrode sections 6 are sequentially formed (in the process, the intersecting electrode sections 6
In the step of applying the resist 7 after Al vapor deposition, the film thickness of the resist is different from that of the pad electrode part 1 and the cross electrode part 6 due to the step difference.
It becomes thicker at the joint with the other parts (causing uneven coating).

このため、露光してもレジストは接合部においては除去
されずに残り、この結果交叉電極が短絡される。Therefore, even after exposure, the resist remains at the junction without being removed, resulting in short-circuiting of the crossed electrodes.

レジスト塗布ムラはパッド電極部１より２０〜３０μｍ
の距離の所に生じるので、パッド電極部１と交叉電極部
６とを第３図に示すように５０μｍ以上離以上形成する
必要がある。Resist coating unevenness is 20 to 30 μm from pad electrode part 1
Therefore, it is necessary to form the pad electrode part 1 and the cross electrode part 6 at a distance of 50 μm or more as shown in FIG.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、電極形成歩留りを向上することができ
る為、安価な弾性表面波素子を提供できる。According to the present invention, since the electrode formation yield can be improved, an inexpensive surface acoustic wave element can be provided.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、従来例の弾性表面波素子を示す平面図、第２
図は、第１図の横断面図、第３図は本発明の一実施例を
示す平面図である。 １・・・パッド電極部。 ２・・・入力変換部、 ６・・・出力変換部。 ４・・・シールド電極。 ５・・・圧電基板。 ６・・・交叉電極部。 ７・・・フォトレジスト。 代理人弁理士　高　橋　明　夫FIG. 1 is a plan view showing a conventional surface acoustic wave element, and FIG.
The drawings are a cross-sectional view of FIG. 1, and FIG. 3 is a plan view showing an embodiment of the present invention. 1... Pad electrode part. 2... Input conversion section, 6... Output conversion section. 4... Shield electrode. 5...Piezoelectric substrate. 6...Cross electrode section. 7...Photoresist. Representative Patent Attorney Akio Takahashi

Claims (1)

【特許請求の範囲】[Claims] ワイヤ接続用のパッド電極部が形成された後に交叉電極
部が形成される弾性表面波素子において、パッド電極部
と交叉電極部との距離を５０μｍ以上離したことを特徴
とする弾性表面波素子。A surface acoustic wave element in which a cross electrode part is formed after a pad electrode part for wire connection is formed, characterized in that the distance between the pad electrode part and the cross electrode part is 50 μm or more.
JP1005084A 1984-01-25 1984-01-25 Surface acoustic wave element Pending JPS60154705A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1005084A JPS60154705A (en) 1984-01-25 1984-01-25 Surface acoustic wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1005084A JPS60154705A (en) 1984-01-25 1984-01-25 Surface acoustic wave element

Publications (1)

Publication Number Publication Date
JPS60154705A true JPS60154705A (en) 1985-08-14

Family

ID=11739567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1005084A Pending JPS60154705A (en) 1984-01-25 1984-01-25 Surface acoustic wave element

Country Status (1)

Country Link
JP (1) JPS60154705A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53139450A (en) * 1977-05-12 1978-12-05 Victor Co Of Japan Ltd Elastic surface wave element
JPS581316A (en) * 1981-06-26 1983-01-06 Hitachi Ltd Metallic strip reflector of surface acoustic wave device and its inspecting method
JPS5974719A (en) * 1982-09-23 1984-04-27 シ−メンス・アクチエンゲゼルシヤフト Surface wave filter and method of producing same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53139450A (en) * 1977-05-12 1978-12-05 Victor Co Of Japan Ltd Elastic surface wave element
JPS581316A (en) * 1981-06-26 1983-01-06 Hitachi Ltd Metallic strip reflector of surface acoustic wave device and its inspecting method
JPS5974719A (en) * 1982-09-23 1984-04-27 シ−メンス・アクチエンゲゼルシヤフト Surface wave filter and method of producing same

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