JPH10190389A - Saw filter and its manufacture - Google Patents
Saw filter and its manufactureInfo
- Publication number
- JPH10190389A JPH10190389A JP34216496A JP34216496A JPH10190389A JP H10190389 A JPH10190389 A JP H10190389A JP 34216496 A JP34216496 A JP 34216496A JP 34216496 A JP34216496 A JP 34216496A JP H10190389 A JPH10190389 A JP H10190389A
- Authority
- JP
- Japan
- Prior art keywords
- idt
- bonding pad
- thin film
- film
- saw filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、SAW(Surf
ace Acoustic Wave:表面弾性波)フ
ィルタ及びその製造方法に関するものである。TECHNICAL FIELD The present invention relates to a SAW (Surf)
The present invention relates to an ace Acoustic Wave (surface acoustic wave) filter and a method of manufacturing the same.
【0002】[0002]
【従来の技術】従来、このような分野の技術としては、
例えば、以下に記載されるようなものがあった。図3は
かかる従来のSAWフィルタの平面図、図4は図3のA
−A線断面図である。2. Description of the Related Art Conventionally, techniques in such a field include:
For example, there are those described below. FIG. 3 is a plan view of such a conventional SAW filter, and FIG.
FIG. 4 is a cross-sectional view taken along a line A.
【0003】これらの図において、1はLiTaO3 な
どの強誘電体基板、2はその強誘電体基板1に形成され
るAl蒸着膜からなるIDT(Inter Digit
alTransducer:すだれ状電極)、3はその
IDTに接続されるAu蒸着膜である。In these figures, reference numeral 1 denotes a ferroelectric substrate such as LiTaO 3 , and 2 denotes an IDT (Inter Digit) made of an Al deposited film formed on the ferroelectric substrate 1.
alTransducer: IDT), 3 is an Au deposited film connected to the IDT.
【0004】[0004]
【発明が解決しようとする課題】LiTaO3 などの強
誘電体基板1に薄膜AlのIDT2を形成後、外部接続
用のAu蒸着膜3を用いてボンディングパッドのパター
ンを形成する場合、Au蒸着膜3のリフトオフを実施す
る場合がある。この際、図5に示すように、薄膜Alの
IDT2が帯電してAu蒸着膜の屑4が帯電したIDT
2に付着し、電極間でショート不良が発生するという問
題点があった。When an IDT 2 of a thin film Al is formed on a ferroelectric substrate 1 such as LiTaO 3 and then a bonding pad pattern is formed by using an Au deposition film 3 for external connection, an Au deposition film is used. 3 may be performed. At this time, as shown in FIG. 5, the IDT 2 of the thin film Al is charged and the dust 4 of the Au deposited film is charged.
2 and short-circuit failure occurs between the electrodes.
【0005】また、最初にIDTを形成し、その後、ボ
ンディングパッドを形成するようにしているので、ボン
ディングパッド形成時に基板面に凹凸が多く形成されて
おり、金属屑が引っ掛かり易い。本発明は、上記問題点
を除去し、IDTの電極間でのショートをなくし、信頼
性の高いSAWフィルタ及びその製造方法を提供するこ
とを目的とする。[0005] Further, since the IDT is formed first, and then the bonding pads are formed, many irregularities are formed on the substrate surface when the bonding pads are formed, and metal chips are easily caught. SUMMARY OF THE INVENTION It is an object of the present invention to provide a highly reliable SAW filter and a method for manufacturing the same that eliminate the above-mentioned problems and eliminate short-circuits between electrodes of an IDT.
【0006】[0006]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 (1)SAWフィルタにおいて、強誘電体基板上に形成
されるボンディングパッドと、このボンディングパッド
に接続されるように形成されるIDTとを設けるように
したものである。In order to achieve the above object, the present invention provides: (1) In a SAW filter, a bonding pad formed on a ferroelectric substrate and a bonding pad connected to the bonding pad. The IDT to be formed is provided.
【0007】(2)上記(1)記載のSAWフィルタに
おいて、前記ボンディングパッドはAu薄膜、前記ID
TはAl薄膜からなる。 (3)SAWフィルタの製造方法において、強誘電体基
板上にAu薄膜からなるボンディングパッドを膜付けす
る工程と、このボンディングパッドに接続されるよう
に、Al薄膜からなるIDTを形成する工程とを施すよ
うにしたものである。(2) In the SAW filter according to (1), the bonding pad is an Au thin film and the ID is
T is made of an Al thin film. (3) In the method of manufacturing a SAW filter, a step of forming a bonding pad made of an Au thin film on a ferroelectric substrate and a step of forming an IDT made of an Al thin film so as to be connected to the bonding pad are performed. It is intended to be applied.
【0008】このように構成したので、上記(1)及び
(2)記載のSAWフィルタによれば、IDTの電極間
でのショートをなくし、信頼性の高いSAWフィルタを
提供することができる。また、上記(3)記載のSAW
フィルタの製造方法によれば、Au薄膜のボンディング
パッド部はAl薄膜のIDTに比べてパターンが大き
く、Al薄膜のIDT部より先にパターンを形成するよ
うにしたので、Alパターンがないので凹凸が少なく表
面積が小さい。さらに、凹凸が少ないので金属屑が引っ
掛かりにくい。[0008] With this configuration, according to the SAW filters described in the above (1) and (2), a short circuit between the electrodes of the IDT can be eliminated, and a highly reliable SAW filter can be provided. Further, the SAW described in the above (3)
According to the filter manufacturing method, the bonding pad portion of the Au thin film has a larger pattern than the IDT of the Al thin film, and the pattern is formed before the IDT portion of the Al thin film. Small and small surface area. Furthermore, since there are few irregularities, metal chips are not easily caught.
【0009】[0009]
【発明の実施の形態】以下、本発明の実施例について図
面を参照しながら詳細に説明する。図1は本発明の第1
実施例を示すSAWフィルタの平面図、図2は図1のB
−B線断面図である。これらの図に示すように、LiT
aO3 などの強誘電体基板11上に、ボンディングパッ
ドを構成するパターンをフォトリソ工程を実施し、蒸着
やスパッタで形成されたAu膜12をパターン化する。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 shows the first embodiment of the present invention.
FIG. 2 is a plan view of a SAW filter showing an embodiment, and FIG.
FIG. 4 is a cross-sectional view taken along line B. As shown in these figures, LiT
A photolithography process is performed on a pattern constituting a bonding pad on a ferroelectric substrate 11 such as aO 3 to pattern an Au film 12 formed by vapor deposition or sputtering.
【0010】次に、導通を確保するためにAu膜12に
少なくともボンディングパッドの一部が重なるようにフ
ォトリソ工程を実施し、蒸着やスパッタで膜付けされた
Al膜13をパターン化する。このように、まず、Au
膜12をパターン化した後に、Al蒸着によるAl薄膜
をパターン化するようにしたので、従来のように、薄膜
AlのIDTが帯電してAu蒸着膜の屑4が帯電したI
DT2に付着し、電極間でショート不良が発生するとい
うことはなくなる。Next, in order to secure conduction, a photolithography process is performed so that at least a part of the bonding pad overlaps the Au film 12, and the Al film 13 formed by vapor deposition or sputtering is patterned. Thus, first, Au
After the film 12 was patterned, the Al thin film was patterned by Al vapor deposition, so that the IDT of the thin film Al was charged and the dust 4 of the Au vapor deposited film was charged as in the conventional case.
It does not adhere to the DT2 and cause a short circuit between the electrodes.
【0011】このようにして得られたSAW(表面弾性
波)フィルタのIDTは、Al薄膜で構成されており、
600MHz〜1.5GHzの周波数が中心であり、
0.8〜数ミクロンのピッチで形成されている。そのた
め、微小なごみであっても特性に大きな影響をあたえ
る。また、SAWフィルタの基板は強誘電体のLiTa
O3 等の材料で作られており、特に温度変化や微かな基
板変形により静電気が発生して、ごみやリフトオフの際
の金属屑が付着する。The IDT of the SAW (surface acoustic wave) filter thus obtained is composed of an Al thin film.
The center is a frequency of 600 MHz to 1.5 GHz,
It is formed at a pitch of 0.8 to several microns. For this reason, even a minute dust greatly affects the characteristics. The substrate of the SAW filter is made of ferroelectric LiTa.
It is made of a material such as O 3 , and in particular, static electricity is generated due to a temperature change or slight substrate deformation, and dust and metal chips at the time of lift-off adhere.
【0012】このように、Au薄膜のボンディングパッ
ド部はAl薄膜のIDTに比べてパターンが大きく、A
l薄膜のIDT部より先にパターンを形成するようにし
たので、Alパターンがないので凹凸が少なく表面積が
小さい。さらに、凹凸が少ないので金属屑が引っ掛かり
にくい。なお、本発明は上記実施例に限定されるもので
はなく、本発明の趣旨に基づいて種々の変形が可能であ
り、これらを本発明の範囲から排除するものではない。As described above, the pattern of the bonding pad portion of the Au thin film is larger than that of the IDT of the Al thin film.
Since the pattern is formed before the IDT portion of the thin film, there is no Al pattern, so there are few irregularities and the surface area is small. Furthermore, since there are few irregularities, metal chips are not easily caught. It should be noted that the present invention is not limited to the above embodiment, and various modifications can be made based on the gist of the present invention, and these are not excluded from the scope of the present invention.
【0013】[0013]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、以下のような効果を奏することができる。 (A)請求項1及び2記載の発明によれば、IDTの電
極間でのショートをなくし、信頼性の高いSAWフィル
タを提供することができる。As described above, according to the present invention, the following effects can be obtained. (A) According to the first and second aspects of the invention, it is possible to provide a highly reliable SAW filter by eliminating a short circuit between electrodes of an IDT.
【0014】(B)請求項3記載の発明によれば、Au
薄膜のボンディングパッド部はAl薄膜のIDTに比べ
てパターンが大きく、Al薄膜のIDT部より先にパタ
ーンを形成するようにしたので、Alパターンがないの
で凹凸が少なく表面積が小さい。 さらに、凹凸が少な
いので金属屑が引っ掛かりにくい。(B) According to the third aspect of the invention, Au
The pattern of the bonding pad portion of the thin film is larger than that of the IDT of the Al thin film, and the pattern is formed before the IDT portion of the Al thin film. Furthermore, since there are few irregularities, metal chips are not easily caught.
【図1】本発明の第1実施例を示すSAWフィルタの平
面図である。FIG. 1 is a plan view of a SAW filter according to a first embodiment of the present invention.
【図2】図1のB−B線断面図である。FIG. 2 is a sectional view taken along line BB of FIG.
【図3】従来のSAWフィルタの平面図である。FIG. 3 is a plan view of a conventional SAW filter.
【図4】図3のA−A線断面図である。FIG. 4 is a sectional view taken along line AA of FIG. 3;
【図5】従来技術の問題点の説明図である。FIG. 5 is an explanatory diagram of a problem of the related art.
11 強誘電体基板 12 Au膜 13 Al膜 Reference Signs List 11 ferroelectric substrate 12 Au film 13 Al film
Claims (3)
ィングパッドと、(b)該ボンディングパッドに接続さ
れるように形成されるIDTとを具備することを特徴と
するSAWフィルタ。1. A SAW filter comprising: (a) a bonding pad formed on a ferroelectric substrate; and (b) an IDT formed to be connected to the bonding pad.
て、前記ボンディングパッドはAu薄膜、前記IDTは
Al薄膜からなるSAWフィルタ。2. The SAW filter according to claim 1, wherein said bonding pad is made of an Au thin film, and said IDT is made of an Al thin film.
ボンディングパッドを膜付けする工程と、(b)該ボン
ディングパッドに接続されるようにAl薄膜からなるI
DTを形成する工程とを施すことを特徴とするSAWフ
ィルタの製造方法。3. A step of depositing a bonding pad made of an Au thin film on a ferroelectric substrate, and (b) an I layer made of an Al thin film so as to be connected to the bonding pad.
And a step of forming a DT.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34216496A JPH10190389A (en) | 1996-12-20 | 1996-12-20 | Saw filter and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34216496A JPH10190389A (en) | 1996-12-20 | 1996-12-20 | Saw filter and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10190389A true JPH10190389A (en) | 1998-07-21 |
Family
ID=18351622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP34216496A Withdrawn JPH10190389A (en) | 1996-12-20 | 1996-12-20 | Saw filter and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH10190389A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006217517A (en) * | 2005-02-07 | 2006-08-17 | Kyocera Corp | Surface acoustic wave element and communication apparatus |
JP2008113273A (en) * | 2006-10-31 | 2008-05-15 | Matsushita Electric Ind Co Ltd | Surface acoustic wave resonator |
JP2010263662A (en) * | 2010-08-23 | 2010-11-18 | Kyocera Corp | Surface acoustic wave element and communication apparatus |
JP2017118425A (en) * | 2015-12-25 | 2017-06-29 | 株式会社村田製作所 | Acoustic wave device |
JP2018006922A (en) * | 2016-06-29 | 2018-01-11 | 株式会社村田製作所 | Surface acoustic wave element, surface acoustic wave filter, and multiplexer |
-
1996
- 1996-12-20 JP JP34216496A patent/JPH10190389A/en not_active Withdrawn
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006217517A (en) * | 2005-02-07 | 2006-08-17 | Kyocera Corp | Surface acoustic wave element and communication apparatus |
JP4637600B2 (en) * | 2005-02-07 | 2011-02-23 | 京セラ株式会社 | Surface acoustic wave element and communication apparatus |
JP2008113273A (en) * | 2006-10-31 | 2008-05-15 | Matsushita Electric Ind Co Ltd | Surface acoustic wave resonator |
JP2010263662A (en) * | 2010-08-23 | 2010-11-18 | Kyocera Corp | Surface acoustic wave element and communication apparatus |
JP2017118425A (en) * | 2015-12-25 | 2017-06-29 | 株式会社村田製作所 | Acoustic wave device |
JP2018006922A (en) * | 2016-06-29 | 2018-01-11 | 株式会社村田製作所 | Surface acoustic wave element, surface acoustic wave filter, and multiplexer |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20040302 |