JPH04369915A - Surface acoustic wave device - Google Patents
Surface acoustic wave deviceInfo
- Publication number
- JPH04369915A JPH04369915A JP17182891A JP17182891A JPH04369915A JP H04369915 A JPH04369915 A JP H04369915A JP 17182891 A JP17182891 A JP 17182891A JP 17182891 A JP17182891 A JP 17182891A JP H04369915 A JPH04369915 A JP H04369915A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric substrate
- protective film
- acoustic wave
- surface acoustic
- wave device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000001681 protective effect Effects 0.000 claims abstract description 17
- 230000006866 deterioration Effects 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 230000002411 adverse Effects 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 229910011131 Li2B4O7 Inorganic materials 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000029052 metamorphosis Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は弾性表面波装置に関する
ものであり、特に耐久性に優れた弾性表面波装置に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device, and particularly to a surface acoustic wave device with excellent durability.
【0002】0002
【従来の技術】弾性表面波装置は、圧電性基板上に発生
する表面波を利用する回路素子であり、圧電性基板上に
くし形電極と称される数μm幅の微細な電極指が交互に
配置された構造の電極が設けられている。[Prior Art] A surface acoustic wave device is a circuit element that utilizes surface waves generated on a piezoelectric substrate, in which minute electrode fingers with a width of several μm called comb-shaped electrodes are arranged alternately on the piezoelectric substrate. Electrodes are provided with a structure arranged at.
【0003】このような弾性表面波装置に大電力を伝送
させると、装置が劣化するという問題があった。[0003] When such a surface acoustic wave device transmits a large amount of power, there is a problem in that the device deteriorates.
【0004】0004
【発明が解決しようとする課題】本発明は上記の欠点を
解決したもので、本発明の目的は、弾性表面波装置の従
来からの電極構造寸法等を踏襲し、しかも耐久性に優れ
た弾性表面波装置を提供することにある。[Problems to be Solved by the Invention] The present invention has solved the above-mentioned drawbacks, and an object of the present invention is to provide an elastic material with excellent durability while following the conventional electrode structure dimensions of surface acoustic wave devices. The purpose of the present invention is to provide a surface wave device.
【0005】[0005]
【課題を解決するための手段及び作用】本発明者は、弾
性表面波装置に大電力を伝送して装置が劣化するときの
劣化状況を観察したところ、圧電基板上への電極形成後
の洗浄工程等において、圧電基板の電極指間の露出面が
変成を受け、これがその後大電力を伝送した場合の弾性
表面波装置の劣化における主要な故障原因の一つとなっ
ていることが分かった。[Means and Effects for Solving the Problems] The present inventor observed the deterioration state of the surface acoustic wave device when the device deteriorates by transmitting a large amount of power, and found that cleaning after forming electrodes on the piezoelectric substrate It was discovered that during the process, the exposed surface between the electrode fingers of the piezoelectric substrate undergoes metamorphosis, which is one of the main causes of failure in the deterioration of surface acoustic wave devices when large amounts of power are subsequently transmitted.
【0006】すなわち、大電力を伝送する際には電極指
間の圧電性基板露出部の劣化が加速を受け、はなはだし
い場合は該基板の一部が剥離するに至り、周波数特性が
大きく劣化していた。In other words, when transmitting large amounts of power, the deterioration of the exposed portion of the piezoelectric substrate between the electrode fingers is accelerated, and in extreme cases, a portion of the substrate may come off, resulting in a significant deterioration of the frequency characteristics. Ta.
【0007】以上の知見から、圧電基板上にくし形電極
が形成された弾性表面波装置において、該くし形電極間
を除いた圧電基板表面の少なくとも電極指間を非圧電性
保護膜でおおうことによって、圧電基板が保管、洗浄等
の作用によって劣化することを抑制、耐久性に優れた弾
性表面波装置を得ることができた。From the above findings, in a surface acoustic wave device in which comb-shaped electrodes are formed on a piezoelectric substrate, it is necessary to cover at least the spaces between the electrode fingers on the surface of the piezoelectric substrate, excluding the area between the comb-shaped electrodes, with a non-piezoelectric protective film. As a result, it was possible to suppress deterioration of the piezoelectric substrate due to storage, cleaning, etc., and to obtain a surface acoustic wave device with excellent durability.
【0008】本発明では、くし形電極を除いた圧電基板
表面を非圧電性保護膜でおおうこととした理由は、くし
形電極部も含めて全面を保護膜でおおうと、くし形電極
そのものが固定されてしまい、表面弾性波装置の特性(
特に周波数特性)に大きな影響を及ぼすこととなり、設
計パラメータを根本から見直さねばならず、問題だから
であり、また、パッド部分の開孔のため2段のフォトリ
ソ工程を必要とし、経済的にも不利となるからである。[0008] In the present invention, the reason why the surface of the piezoelectric substrate except for the comb-shaped electrodes is covered with a non-piezoelectric protective film is that even if the entire surface including the comb-shaped electrodes is covered with a protective film, the comb-shaped electrodes themselves The characteristics of the surface acoustic wave device (
This is because the design parameters have to be fundamentally reconsidered, which has a large effect on the frequency characteristics (particularly the frequency characteristics), which is a problem.Also, it requires a two-step photolithography process to open holes in the pad area, which is economically disadvantageous. This is because.
【0009】また、本発明では圧電基板の少なくとも電
極指間を非圧電性保護膜でおおうこととした理由は、電
極指間の露出面の変成が装置劣化の主原因であるが、く
し形電極同志間の圧電基板の露出面を同時に保護膜でお
おった方がより好ましいからである。Furthermore, in the present invention, the reason why at least the spaces between the electrode fingers of the piezoelectric substrate are covered with a non-piezoelectric protective film is that deformation of the exposed surface between the electrode fingers is the main cause of device deterioration. This is because it is more preferable to simultaneously cover the exposed surfaces of the piezoelectric substrates between the two with a protective film.
【0010】本発明によってLB基板等耐水性に難のあ
る圧電基板を用いた表面弾性波装置の耐久性を大幅に改
善することが可能となり、しかも従来からの設計パラメ
ータもそのまま使用できるという利点も備えた表面弾性
波装置を得ることができる。The present invention makes it possible to significantly improve the durability of surface acoustic wave devices using piezoelectric substrates with poor water resistance, such as LB substrates, and also has the advantage that conventional design parameters can be used as they are. A surface acoustic wave device can be obtained.
【0011】[0011]
【実施例】以下本発明の実施例について、図1を用いて
説明する。まず、電気機械的結合定数の大きなLi2B
4O7等の圧電基板1の上にアルミニウム金属等の電極
材2を蒸着する。(図1(a))[Embodiment] An embodiment of the present invention will be described below with reference to FIG. First, Li2B has a large electromechanical coupling constant.
An electrode material 2 made of aluminum metal or the like is deposited on a piezoelectric substrate 1 made of 4O7 or the like. (Figure 1(a))
【0012】次に、フォトレジストパタ−ン3を電極材
2の上に形成する。(図1(b))フォトレジストパタ
ーン3により、電極材2をエッチングして、圧電性基板
1上に数μm間隔に形成されたアルミニウム金属等から
成る数μm幅の電極指4が形成される。(図1(c))
Next, a photoresist pattern 3 is formed on the electrode material 2. (FIG. 1(b)) By etching the electrode material 2 using the photoresist pattern 3, electrode fingers 4 made of aluminum metal or the like and having a width of several μm are formed on the piezoelectric substrate 1 at intervals of several μm. . (Figure 1(c))
【0013】次に、その表面にSiO2、Si3N4等
の非圧電性の保護膜5をスパッタリング法等の適当な成
膜法で形成する。(図1(d))Next, a non-piezoelectric protective film 5 made of SiO2, Si3N4, etc. is formed on the surface by a suitable film-forming method such as sputtering. (Figure 1(d))
【0014】更にその後リフトオフ法によって、フォト
レジストをその上に形成された保護膜5とともに除去す
る。(図1(e))Furthermore, the photoresist is removed together with the protective film 5 formed thereon by a lift-off method. (Figure 1(e))
【0015】以上の工程により、保護膜5を電極指間及
びくし形電極間に形成することができる。By the above steps, the protective film 5 can be formed between the electrode fingers and between the comb-shaped electrodes.
【0016】この保護膜は50〜100Å程度の厚さが
あれば、圧電基板の劣化が進行することを防ぐ機能を充
分保持でき、しかもくし形電極そのものは露出した構造
を保つことができることから、表面弾性波装置への悪影
響は抑えられる。If this protective film has a thickness of about 50 to 100 Å, it can sufficiently maintain the function of preventing the progress of deterioration of the piezoelectric substrate, and the comb-shaped electrode itself can maintain an exposed structure. Adverse effects on surface acoustic wave devices can be suppressed.
【0017】また、本発明によれば、電極形成と保護膜
形成が同一のフォトリソ工程で達成できることから、経
済的メリットも極めて大きい。Furthermore, according to the present invention, since electrode formation and protective film formation can be accomplished in the same photolithography process, there is also an extremely large economic advantage.
【0018】さらに、本発明によれば、保護膜が電極指
の側面にも密着しており、くし形電極の機械的強度を補
強している。Furthermore, according to the present invention, the protective film is also in close contact with the side surfaces of the electrode fingers, reinforcing the mechanical strength of the comb-shaped electrode.
【0019】[0019]
【発明の効果】以上説明したように、本発明によれば、
くし形電極を除いた圧電基板表面を非圧電性保護膜でお
おっているので、圧電性基板の劣化を防止でき、耐久性
に優れた弾性表面波装置を得ることができる。[Effects of the Invention] As explained above, according to the present invention,
Since the surface of the piezoelectric substrate except for the comb-shaped electrodes is covered with a non-piezoelectric protective film, deterioration of the piezoelectric substrate can be prevented and a surface acoustic wave device with excellent durability can be obtained.
【図1】本発明にかかる保護膜を形成する方法の1実施
例を示す図である。FIG. 1 is a diagram showing one embodiment of a method for forming a protective film according to the present invention.
Claims (1)
弾性表面波装置において、該くし形電極を除いた圧電基
板表面の少なくとも電極指間が非圧電性保護膜でおおわ
れていることを特徴とする弾性表面波装置。1. A surface acoustic wave device in which comb-shaped electrodes are formed on a piezoelectric substrate, characterized in that at least the spaces between the electrode fingers on the surface of the piezoelectric substrate excluding the comb-shaped electrodes are covered with a non-piezoelectric protective film. surface acoustic wave device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17182891A JPH04369915A (en) | 1991-06-18 | 1991-06-18 | Surface acoustic wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17182891A JPH04369915A (en) | 1991-06-18 | 1991-06-18 | Surface acoustic wave device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04369915A true JPH04369915A (en) | 1992-12-22 |
Family
ID=15930499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17182891A Pending JPH04369915A (en) | 1991-06-18 | 1991-06-18 | Surface acoustic wave device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04369915A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6078123A (en) * | 1997-08-08 | 2000-06-20 | Nec Corporation | Structure and method for mounting a saw device |
US6861786B2 (en) * | 2001-06-22 | 2005-03-01 | Oki Electric Industry Co., Ltd. | Saw device |
KR100690552B1 (en) * | 2005-02-04 | 2007-03-12 | 세이코 엡슨 가부시키가이샤 | Substrate before insulation, method of manufacturing substrate, method of manufacturing surface acoustic wave transducer, surface acoustic wave device, and electronic equipment |
US20130029033A1 (en) * | 2011-03-16 | 2013-01-31 | Murata Manufacturing Co., Ltd. | Method for manufacturing acoustic wave device |
-
1991
- 1991-06-18 JP JP17182891A patent/JPH04369915A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6078123A (en) * | 1997-08-08 | 2000-06-20 | Nec Corporation | Structure and method for mounting a saw device |
US6861786B2 (en) * | 2001-06-22 | 2005-03-01 | Oki Electric Industry Co., Ltd. | Saw device |
US7034435B2 (en) | 2001-06-22 | 2006-04-25 | Oki Electric Industry Co., Ltd. | Saw device |
KR100690552B1 (en) * | 2005-02-04 | 2007-03-12 | 세이코 엡슨 가부시키가이샤 | Substrate before insulation, method of manufacturing substrate, method of manufacturing surface acoustic wave transducer, surface acoustic wave device, and electronic equipment |
US20130029033A1 (en) * | 2011-03-16 | 2013-01-31 | Murata Manufacturing Co., Ltd. | Method for manufacturing acoustic wave device |
US9584088B2 (en) * | 2011-03-16 | 2017-02-28 | Murata Manufacturing Co., Ltd. | Method for manufacturing acoustic wave device |
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