JPS60152033A - Flash removing device - Google Patents
Flash removing deviceInfo
- Publication number
- JPS60152033A JPS60152033A JP714184A JP714184A JPS60152033A JP S60152033 A JPS60152033 A JP S60152033A JP 714184 A JP714184 A JP 714184A JP 714184 A JP714184 A JP 714184A JP S60152033 A JPS60152033 A JP S60152033A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- flashes
- liquid
- burrs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 239000011347 resin Substances 0.000 claims abstract description 25
- 229920005989 resin Polymers 0.000 claims abstract description 25
- 239000007788 liquid Substances 0.000 claims abstract description 22
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000007790 scraping Methods 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 16
- 239000006061 abrasive grain Substances 0.000 description 5
- 238000005422 blasting Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 210000000988 bone and bone Anatomy 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［技術骨！ｌ’ｒ ］
本発明は樹脂封止された半導体装置のフラッシュぼりゃ
ダム内レジン等を除去するために用いて特に効果のある
ぼり取り技術に関するものである。[Detailed description of the invention] [Technical bones! l'r ] The present invention relates to a deburring technique that is particularly effective when used to remove resin and the like in a flash dam of a resin-sealed semiconductor device.
［背景技術］
樹脂成形されたパッケージよりなる半導体装置はコスト
が低い等の特徴があるので半導体装置の全体の中でかな
り大きい割合を占めている。[Background Art] Semiconductor devices made of resin-molded packages have characteristics such as low cost, and therefore account for a fairly large proportion of all semiconductor devices.
ところで、この種の半導体装置においては、樹脂成形さ
れる際に樹脂（レジン）材料がパッケージ外にはみ出し
てフラッシュぼりあるいはダム内レジンというようなば
りを生しることがある。By the way, in this type of semiconductor device, when the semiconductor device is resin-molded, the resin material may protrude outside the package, causing burrs such as flash burrs or resin in dams.
このようなぼりは半導体装置の外観を損なう上に、半田
の濡れ性を悪化させる等、機能的にも好ましくないもの
である。Such banners not only impair the appearance of the semiconductor device, but also deteriorate the wettability of solder, and are undesirable from a functional standpoint.
そごで、フラッシュばりを除去するため、砥粒を用いた
ブラスト方式を採用するか、あるいは薬品を用いてばり
を剥離さセることが考えられる。In order to remove flash burrs, it is conceivable to adopt a blasting method using abrasive grains or to remove the burrs using chemicals.
また、ダム内レジンの除去については、空気または水と
共に砥粒を用いたブラスト方式、もしくは機械的にピン
等で突く方式が尤えられる。Further, for removing the resin inside the dam, a blasting method using abrasive grains together with air or water, or a method of mechanically poking with a pin or the like can be used.
しかしながら、ブラスト方式式の場合、モールド成形さ
れたパッケージ部分をマスクで覆う必要があり、パッケ
ージ形状に合ったマスクが要求される。また、ブラスト
方式では、砥粒を小さくすると、衝撃力が弱くなり、特
にダム内レジンの除去が不可能になる一方、砥粒を大き
くすると、衝撃力は大きくなるものの、砥粒がリード間
に詰るという問題が生じることが本発明者によって見い
出された。さらに、プラスＩ・方式では、塵芥や騒音が
多く発生したり、ランニングコストも高いということが
本発明者により明らかにされた。However, in the case of the blast method, it is necessary to cover the molded package portion with a mask, and a mask that matches the shape of the package is required. In addition, in the blasting method, if the abrasive grains are made smaller, the impact force becomes weaker, making it impossible to remove the resin inside the dam, while if the abrasive grains are made larger, the impact force becomes larger, but the abrasive grains become weaker between the leads. It has been discovered by the inventor that the problem of clogging occurs. Furthermore, the inventor has revealed that the Plus I method generates a lot of dust and noise, and has high running costs.
一方、前記した薬品を用いる方式では、フラッシュばり
の剥８１ｔは可能であるものの、完全に取り除くにはブ
ラッシング等をトｊ加する必要があり、ランニングコス
トも高くなる他、ダム内レジンの除去は困ゲ１１である
という問題があることが本発明者によって解明された。On the other hand, although it is possible to remove flash flash 81t with the method using chemicals, it is necessary to perform brushing, etc. to completely remove it, which increases running costs, and it is difficult to remove the resin inside the dam. The inventor of the present invention has discovered that there is a problem in that the problem is difficult.
［発明の目的］
本発明の目的は、樹脂封止された半導体装置のぼりを迅
速かつ確実に除去することのできる技術を提供すること
にある。[Object of the Invention] An object of the present invention is to provide a technique that can quickly and reliably remove the banner of a resin-sealed semiconductor device.
本発明の目的は、樹脂封止された半導体装置のダム内レ
ジンばりおよびフラッシュばりを確実に除去できる技術
を提供することにある。An object of the present invention is to provide a technique that can reliably remove resin burrs and flash burrs in a dam of a resin-sealed semiconductor device.
本発明の他の目的は、騒音や塵芥の発生の少ないばり取
り技術を提供することにある。Another object of the present invention is to provide a deburring technique that generates less noise and dust.
本発明の他の目的は、ランニングコストの低いぼり取り
技術を提供することにある。Another object of the present invention is to provide a deburring technique with low running costs.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細店の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description and accompanying drawings herein.
［発明の概要］
本願において開示される発明のうら代表的なものの概要
を簡単に説明すれば、次の通りである。[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.
ずなわら、樹Ｊｌｔｉ ＩＪ 、ＬＩ−された半導体装
置に対して、上下両方向から超高圧の液体を噴射さ−Ｕ
ることにより、半導体装置の」二側または下側に形成さ
れたばりへ直接に超高圧の液体を当てることができるの
で、半導体装置の上下どらら側にばりが形成されていて
も確実に除去することができる。Suddenly, ultra-high pressure liquid was sprayed from both the top and bottom of the semiconductor device that had been LI-U.
By applying this method, ultra-high pressure liquid can be applied directly to burrs formed on the two sides or the bottom of the semiconductor device, so even if burrs are formed on the top and bottom sides of the semiconductor device, they can be removed reliably. can do.
［実施例］
第１図は樹脂封止型半導体装置におりるばりの発生状況
を示す部分平面図であり、符号１は樹脂によりモールド
された半導体装置、１は半導体装置ｌのリード、３はダ
ム内レジンであり、いゎゆるフラッシュぼりはリード２
等の表面上に薄く形成される。[Example] FIG. 1 is a partial plan view showing the occurrence of burrs in a resin-molded semiconductor device, where 1 is a semiconductor device molded with resin, 1 is a lead of the semiconductor device L, and 3 is a semiconductor device molded with resin. It is resin inside the dam, and the so-called flash stream is lead 2
It is formed thinly on the surface of etc.
第２図はこのようなばりを除去するための本発明による
ぼり取り装置の一実施例を示す概略的説明図である。FIG. 2 is a schematic explanatory diagram showing an embodiment of a deburring device according to the present invention for removing such burrs.
この実施例において、符号４は超高圧ポンプ、５は耐高
圧パイプ、６Ａ、６Ｂはそれぞれ半導体装置ｌの上方お
よび下方に配設している噴射ノズル、７は噴射ノズル６
Δ、６Ｂからぼりに向り゛ζ噴射された液体たとえば水
の噴射流、８は樹脂封止された状態のリードフレームで
ある。In this embodiment, reference numeral 4 is an ultra-high pressure pump, 5 is a high pressure resistant pipe, 6A and 6B are injection nozzles disposed above and below the semiconductor device l, respectively, and 7 is an injection nozzle 6.
A jet stream of liquid, such as water, is injected toward the top from Δ and 6B. 8 is a lead frame sealed with resin.
超高圧ポンプ４は液体をたとえば約４００ｋｇ／ｃｉ以
上の超１１１１圧に圧縮できるものである。The ultra-high pressure pump 4 is capable of compressing liquid to an ultra-1111 pressure of, for example, about 400 kg/ci or more.
半導体装７ｉ １の上方および下方に配設している噴射
ノズル６Ａ、６Ｂは、図示しない駆動機構によりたとえ
ば第３図に示す如きパターンでおのおの水平方向に移動
し、半導体装置１の上側、下側に存在する各種のぼりを
万遍なく確実に除去する。The injection nozzles 6A and 6B disposed above and below the semiconductor device 7i1 are moved horizontally by a drive mechanism (not shown) in a pattern as shown in FIG. To ensure that all kinds of banners existing in the area are evenly removed.
また、樹脂封止後のリードフレーム８も図示しない送り
機構で所定方向に所定速度でピンチ送り方式等により送
られる。Further, the lead frame 8 after resin sealing is also fed by a feeding mechanism (not shown) in a predetermined direction at a predetermined speed using a pinch feeding method or the like.
次に、本実施例の作用について説明する。Next, the operation of this embodiment will be explained.
まず、噴射されるべき液体は超高圧ポンプ４により所望
の超高圧状態にされる。本発明者の実験によれば、この
場合の超高圧は約４００〜１００Ｑ ｋｇ ／ ｃＪの
範囲内で選ぶことにより、如何なるばりをも確実かつ迅
速に除去することができ、しかも樹脂モールド部を特別
に保護マスクで覆わなくても樹脂モールド部を破壊する
ことがないことが明らかとなった。First, the liquid to be injected is brought to a desired ultra-high pressure state by the ultra-high pressure pump 4. According to the inventor's experiments, by selecting the ultra-high pressure in the range of about 400 to 100 Q kg/cJ, any burrs can be removed reliably and quickly, and the resin molded part can be specially It has become clear that the resin mold part will not be destroyed even if it is not covered with a protective mask.
そこで、今、リードフレーム８が紙面左から右に送られ
ているとすると、まずＡ点において、半導体装置ｌの上
方に設けである噴射ノズル６Ａがら噴射流７を超高圧で
半導体装置ｌのダム内レジンばりおよびリード２の上側
に形成されているフラッシュぼりに噴射して除去する。Therefore, if the lead frame 8 is now being fed from left to right in the paper, first, at point A, the jet stream 7 is applied to the dam of the semiconductor device l using ultra-high pressure from the jet nozzle 6A provided above the semiconductor device l. The inner resin burrs and the flash burrs formed on the upper side of the lead 2 are sprayed and removed.
なお、このときり一ド２の下側に形成されているフラッ
シュぼりは、噴射流７が直接当てられていないため残っ
てしまう。このため、Ｂ点において、半導体装置１の下
方に設けである噴射ノズル６Ｂを用いて、半導体装置の
下側から噴射流７を当てて、へ点で除去できなかったダ
ム内レジンばりおよびリード２の下側に形成されている
フラッシュばりを除去する。Note that, at this time, the flash ridge formed on the lower side of the perforation 2 remains because the jet stream 7 is not directly applied to it. Therefore, at point B, a jet nozzle 6B provided below the semiconductor device 1 is used to apply a jet stream 7 from below the semiconductor device to remove the resin burrs inside the dam and the leads 2 that could not be removed at the point B. Remove flash burrs formed on the underside of the
このようにして、半導体装置１の上下両側に設りた噴射
ノズル６Ａおよび６Ｂから超高圧の噴射流７を噴射しな
がら、該噴射ノズル６Δ−６Ｂを第３図の如きパターン
でおのおの水平方向に移動さ−Ｕることにより、噴射流
７を樹脂モールドされた半導体装置の前面にくまなく当
てることができ、リード２の上側、下側両方のフラッシ
ュばりが除去でき、さらにダム内レジン３を確実に、し
かも迅速に除去することができる。In this way, while injecting the ultra-high pressure jet stream 7 from the injection nozzles 6A and 6B provided on both the upper and lower sides of the semiconductor device 1, the injection nozzles 6Δ-6B are moved horizontally in a pattern as shown in FIG. By moving -U, the jet stream 7 can be applied to the entire front surface of the resin-molded semiconductor device, the flash burrs on both the upper and lower sides of the lead 2 can be removed, and the resin 3 in the dam can be securely removed. and can be removed quickly.
［効果］
（１）、ぼり取りを要する試料の上方および下方から超
高圧の液体を試料のぼり取り部分に噴射する液体噴射手
段を設けることにより、ダム内レジンばりおよびリード
の上側、下側のフラッシュばりを確実に除去できるとい
う効果が得られる。[Effects] (1) By providing a liquid injection means that injects ultra-high-pressure liquid from above and below to the portion of the sample that needs to be removed, resin burrs in the dam and flashes on the upper and lower sides of the lead can be eliminated. This provides the effect of reliably removing burrs.
（２）、液体噴射手段から超高圧の液体を噴射すること
により、ばりが除去できるので、固形体または固形体を
混入した液体によりぼり取りを行うものに比較して騒音
や粉塵が生じるのを防止することができるという効果が
得られる。(2) Burrs can be removed by injecting ultra-high pressure liquid from the liquid injection means, which generates less noise and dust compared to methods that remove burrs with solids or liquid mixed with solids. The effect is that it can be prevented.
（３）、超高圧液体の圧力を約４００〜１０００ｋｇ／
−にすることにより、半導体装置に傷をイ」りることな
くばり取りを行うことができる。(3) The pressure of ultra-high pressure liquid is approximately 400 to 1000 kg/
By setting it to −, deburring can be performed without causing damage to the semiconductor device.
（４）、液体として水の如き安価なものを使用すれば、
ランニングコストを大中に低減できる。(4) If you use a cheap liquid like water,
Running costs can be significantly reduced.
以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.
たとえば、半導体装置の上方および下方に配設する噴射
ノズルは、−直線上に対向した形で配置してもよい。ま
た、噴射される液体としては、水の他に、炭化水素のフ
ルオルクロル置換体、油等も用いることができる。For example, the injection nozzles disposed above and below the semiconductor device may be disposed opposite to each other in a straight line. Furthermore, as the liquid to be injected, in addition to water, fluorochloro-substituted hydrocarbons, oil, and the like can also be used.
また、噴射流の移動パターン等も前記の例に１９定され
ない。Furthermore, the movement pattern of the jet stream, etc. is not fixed to the above example.
第１図は樹脂封止型半導体装置におけるばりの発生状況
を示す部分平面図、
第２図は本発明の一実施例であるぼり取り装置の概略的
説明図、
第３図は噴射流の移動パターンの一例を示す図である。
ｌ・・・半導体装置、２・・・リード、３・・・ダム内
レジン、４・・・超高圧ポンプ、５・・・耐高圧パイプ
、６八、６Ｂ・・・噴射ノズル、７・・・噴射流、８・
・・リードフレーム。Fig. 1 is a partial plan view showing the occurrence of burrs in a resin-sealed semiconductor device, Fig. 2 is a schematic explanatory diagram of a deburring device which is an embodiment of the present invention, and Fig. 3 is a movement of jet flow. It is a figure which shows an example of a pattern. l...Semiconductor device, 2...Lead, 3...Resin in dam, 4...Ultra high pressure pump, 5...High pressure resistant pipe, 68, 6B...Injection nozzle, 7...・Jet flow, 8・
··Lead frame.
Claims (1)
、前記半導体装置に付随する樹脂ぼりに対してに芳およ
び下方から高圧で液体を噴射可能な液体噴射手段を備え
てなることを特徴とするぼり取り装置。 ２、液体噴射手段から噴射される高圧液体の圧力が約４
００〜１０００ｋｇ／ｃｔであることを特徴とする特許
請求の範囲第１項記載のぼり取り装置。 ３、液体が水であることを特徴とする特許請求の範囲第
１項記載のぼり取り装置。[Scope of Claims] (1) A device for removing a resin-sealed semiconductor device, comprising a liquid injection means capable of injecting a liquid at high pressure from above and below onto the resin film attached to the semiconductor device. A rip-off device that is characterized by the ability to 2. The pressure of the high pressure liquid injected from the liquid injection means is approximately 4
2. The scraping device according to claim 1, wherein the weight is 00 to 1000 kg/ct. 3. The scraping device according to claim 1, wherein the liquid is water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP714184A JPS60152033A (en) | 1984-01-20 | 1984-01-20 | Flash removing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP714184A JPS60152033A (en) | 1984-01-20 | 1984-01-20 | Flash removing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60152033A true JPS60152033A (en) | 1985-08-10 |
Family
ID=11657794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP714184A Pending JPS60152033A (en) | 1984-01-20 | 1984-01-20 | Flash removing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60152033A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6386529A (en) * | 1986-09-30 | 1988-04-16 | Toshiba Corp | Flash removing device for resin-sealed semiconductor |
| US5070041A (en) * | 1988-08-12 | 1991-12-03 | Mitsui Petrochemical Industries, Ltd. | Method of removing flash from a semiconductor leadframe using coated leadframe and solvent |
-
1984
- 1984-01-20 JP JP714184A patent/JPS60152033A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6386529A (en) * | 1986-09-30 | 1988-04-16 | Toshiba Corp | Flash removing device for resin-sealed semiconductor |
| US5070041A (en) * | 1988-08-12 | 1991-12-03 | Mitsui Petrochemical Industries, Ltd. | Method of removing flash from a semiconductor leadframe using coated leadframe and solvent |
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