JPS60143677A - 光検出装置及びその製造方法 - Google Patents

光検出装置及びその製造方法

Info

Publication number
JPS60143677A
JPS60143677A JP58249545A JP24954583A JPS60143677A JP S60143677 A JPS60143677 A JP S60143677A JP 58249545 A JP58249545 A JP 58249545A JP 24954583 A JP24954583 A JP 24954583A JP S60143677 A JPS60143677 A JP S60143677A
Authority
JP
Japan
Prior art keywords
layer
gate
region
film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58249545A
Other languages
English (en)
Japanese (ja)
Other versions
JPH051632B2 (enExample
Inventor
Junichi Nishizawa
潤一 西澤
Naoshige Tamamushi
玉蟲　尚茂
Baarushiyoni Ishiyutobuaan
イシユトヴアーン・バールシヨニ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Shingijutsu Kaihatsu Jigyodan
Original Assignee
Research Development Corp of Japan
Shingijutsu Kaihatsu Jigyodan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan, Shingijutsu Kaihatsu Jigyodan filed Critical Research Development Corp of Japan
Priority to JP58249545A priority Critical patent/JPS60143677A/ja
Publication of JPS60143677A publication Critical patent/JPS60143677A/ja
Publication of JPH051632B2 publication Critical patent/JPH051632B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/285—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having PN homojunction gates
    • H10F30/2863—Field-effect phototransistors having PN homojunction gates

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP58249545A 1983-12-29 1983-12-29 光検出装置及びその製造方法 Granted JPS60143677A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58249545A JPS60143677A (ja) 1983-12-29 1983-12-29 光検出装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58249545A JPS60143677A (ja) 1983-12-29 1983-12-29 光検出装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS60143677A true JPS60143677A (ja) 1985-07-29
JPH051632B2 JPH051632B2 (enExample) 1993-01-08

Family

ID=17194581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58249545A Granted JPS60143677A (ja) 1983-12-29 1983-12-29 光検出装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS60143677A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63269578A (ja) * 1987-04-28 1988-11-07 Olympus Optical Co Ltd 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63269578A (ja) * 1987-04-28 1988-11-07 Olympus Optical Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPH051632B2 (enExample) 1993-01-08

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