JPH051632B2 - - Google Patents

Info

Publication number
JPH051632B2
JPH051632B2 JP58249545A JP24954583A JPH051632B2 JP H051632 B2 JPH051632 B2 JP H051632B2 JP 58249545 A JP58249545 A JP 58249545A JP 24954583 A JP24954583 A JP 24954583A JP H051632 B2 JPH051632 B2 JP H051632B2
Authority
JP
Japan
Prior art keywords
layer
gate
region
sit
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58249545A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60143677A (ja
Inventor
Junichi Nishizawa
Naoshige Tamamushi
Baarushoni Ishutoaan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHINGIJUTSU JIGYODAN
Original Assignee
SHINGIJUTSU JIGYODAN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHINGIJUTSU JIGYODAN filed Critical SHINGIJUTSU JIGYODAN
Priority to JP58249545A priority Critical patent/JPS60143677A/ja
Publication of JPS60143677A publication Critical patent/JPS60143677A/ja
Publication of JPH051632B2 publication Critical patent/JPH051632B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/285—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having PN homojunction gates
    • H10F30/2863—Field-effect phototransistors having PN homojunction gates

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP58249545A 1983-12-29 1983-12-29 光検出装置及びその製造方法 Granted JPS60143677A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58249545A JPS60143677A (ja) 1983-12-29 1983-12-29 光検出装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58249545A JPS60143677A (ja) 1983-12-29 1983-12-29 光検出装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS60143677A JPS60143677A (ja) 1985-07-29
JPH051632B2 true JPH051632B2 (enExample) 1993-01-08

Family

ID=17194581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58249545A Granted JPS60143677A (ja) 1983-12-29 1983-12-29 光検出装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS60143677A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2578600B2 (ja) * 1987-04-28 1997-02-05 オリンパス光学工業株式会社 半導体装置

Also Published As

Publication number Publication date
JPS60143677A (ja) 1985-07-29

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