JPS60134417A - 液相成長法 - Google Patents

液相成長法

Info

Publication number
JPS60134417A
JPS60134417A JP58242092A JP24209283A JPS60134417A JP S60134417 A JPS60134417 A JP S60134417A JP 58242092 A JP58242092 A JP 58242092A JP 24209283 A JP24209283 A JP 24209283A JP S60134417 A JPS60134417 A JP S60134417A
Authority
JP
Japan
Prior art keywords
growth
temperature
melt
liquid phase
molten liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58242092A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0231492B2 (enrdf_load_stackoverflow
Inventor
Masaaki Sakata
雅昭 坂田
Sumio Ishimatsu
石松　純男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP58242092A priority Critical patent/JPS60134417A/ja
Publication of JPS60134417A publication Critical patent/JPS60134417A/ja
Publication of JPH0231492B2 publication Critical patent/JPH0231492B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP58242092A 1983-12-23 1983-12-23 液相成長法 Granted JPS60134417A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58242092A JPS60134417A (ja) 1983-12-23 1983-12-23 液相成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58242092A JPS60134417A (ja) 1983-12-23 1983-12-23 液相成長法

Publications (2)

Publication Number Publication Date
JPS60134417A true JPS60134417A (ja) 1985-07-17
JPH0231492B2 JPH0231492B2 (enrdf_load_stackoverflow) 1990-07-13

Family

ID=17084174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58242092A Granted JPS60134417A (ja) 1983-12-23 1983-12-23 液相成長法

Country Status (1)

Country Link
JP (1) JPS60134417A (enrdf_load_stackoverflow)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148421A (en) * 1979-05-09 1980-11-19 Fujitsu Ltd Refining method of chemical compound semiconductor crystal
JPS5712578A (en) * 1980-06-26 1982-01-22 Fujitsu Ltd Manufacture of semiconductor light-emitting device
JPS57175796A (en) * 1981-04-18 1982-10-28 Omron Tateisi Electronics Co Liquid phase epitaxial growth
JPS5812324A (ja) * 1981-07-15 1983-01-24 Toshiba Corp 液相エピタキシヤル成長法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148421A (en) * 1979-05-09 1980-11-19 Fujitsu Ltd Refining method of chemical compound semiconductor crystal
JPS5712578A (en) * 1980-06-26 1982-01-22 Fujitsu Ltd Manufacture of semiconductor light-emitting device
JPS57175796A (en) * 1981-04-18 1982-10-28 Omron Tateisi Electronics Co Liquid phase epitaxial growth
JPS5812324A (ja) * 1981-07-15 1983-01-24 Toshiba Corp 液相エピタキシヤル成長法

Also Published As

Publication number Publication date
JPH0231492B2 (enrdf_load_stackoverflow) 1990-07-13

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