JPS60131660A - Magneto-optical memory element - Google Patents
Magneto-optical memory elementInfo
- Publication number
- JPS60131660A JPS60131660A JP23155384A JP23155384A JPS60131660A JP S60131660 A JPS60131660 A JP S60131660A JP 23155384 A JP23155384 A JP 23155384A JP 23155384 A JP23155384 A JP 23155384A JP S60131660 A JPS60131660 A JP S60131660A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magneto
- memory element
- information
- optical memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
Abstract
Description
【発明の詳細な説明】
〈発明の技術分野〉
本発明は反射光を用いて、情報の再生を行なう磁気光学
記憶素子に関し、更に詳細には両面からの情報の再生を
可能にした磁気光学記憶素子に関するものである。[Detailed Description of the Invention] <Technical Field of the Invention> The present invention relates to a magneto-optical memory element that reproduces information using reflected light, and more particularly to a magneto-optical memory element that allows information to be reproduced from both sides. It is related to the element.
〈発明の従来技術〉
近年、高密度、大容量、高速アクセス等種々の要求を満
足し得る光メモリ装置の研究開発が活発に推進されてお
り、各種光メモリ装置のうちでも、特に、記憶材料とし
て種々の垂直磁化膜を有するものを用いた磁気光学記憶
素子は情報の書き換えが可能であることから、注目され
ている。<Prior Art to the Invention> In recent years, research and development of optical memory devices that can satisfy various demands such as high density, large capacity, and high speed access have been actively promoted. Magneto-optical storage elements using perpendicularly magnetized films are attracting attention because information can be rewritten.
しかし、以上の利点を有する磁気光学記憶素子は、再生
信号レベルが低いという欠点があり、特に磁気光学記憶
素子からの反射光を利用して情報の再生を行なうカー効
果再生方式においては、カー回転角が小さいためＳ 、
／ Ｎ比を高めることが困難である。However, the magneto-optical storage element, which has the above advantages, has the disadvantage of a low reproduction signal level.Especially in the Kerr effect reproduction method, which uses reflected light from the magneto-optic storage element to reproduce information, the Kerr rotation S because the angle is small,
/ It is difficult to increase the N ratio.
即ち、ＳＺＮ比を高める為には、例えば記録媒体−Ｌに
誘電体膜を形成することによりカー効果を強めればよく
、具体的には、ＭｎＢ１製の磁性簿膜上にＳｉＯ製の膜
を形成してカー回転角を０７度から３６度に増加させる
ことができた。That is, in order to increase the SZN ratio, it is sufficient to strengthen the Kerr effect by, for example, forming a dielectric film on the recording medium-L. Specifically, a film made of SiO is formed on a magnetic film made of MnB1. It was possible to increase the Kerr rotation angle from 07 degrees to 36 degrees.
しかし、この場合には反射光量が５７％に激減する為、
カー回転角を約５倍に増加させたにも拘わらず、Ｓ／Ｎ
比は２倍となるのみであ″る。However, in this case, the amount of reflected light is drastically reduced to 57%,
Despite increasing the Kerr rotation angle by approximately 5 times, the S/N
The ratio is only doubled.
前記ＭｎＢ１製の磁性膜以外の磁性薄膜を用いた場合に
おいても、該磁性薄膜上に誘電体膜を適当な厚さで形成
することによって、同様にカー効果を増加させることが
可能であるが、カー効果が増加する誘電体の膜厚は、反
射率を減少させる膜厚、即ち反射防止膜としての厚みで
あり、Ｓ／Ｎ比の大きな増大は望み得ない。Even when using a magnetic thin film other than the magnetic film made of MnB1, the Kerr effect can be similarly increased by forming a dielectric film with an appropriate thickness on the magnetic thin film. The dielectric film thickness at which the Kerr effect increases is the film thickness at which the reflectance decreases, that is, the thickness as an antireflection film, and a large increase in the S/N ratio cannot be expected.
〈発明の目的〉
本発明は、反射率を減少させることなくカー回転角を増
加させ得るようにしてｓ ／Ｓ比を改善すると共に両面
からの情報の゛、再生を可能にした磁気光学記憶素子を
提供することを目的としている。<Object of the Invention> The present invention provides a magneto-optical memory element that can increase the Kerr rotation angle without decreasing the reflectance, improve the S/S ratio, and make it possible to reproduce information from both sides. is intended to provide.
〈発明の構成〉
上記目的を達成するため、本発明の磁気光学記憶素子は
、情報再生用の光に対して充分な反射率を有する金属反
射膜と、希土類と遷移金属とから成るアモルファス磁性
体合金等の光吸収性を有する垂直磁化膜と、保護層とを
有する第１及び第２の磁気光学記憶素子を備え、上記の
第１及び第２の磁気光学記憶素子を上記の保護層が両外
側になるように対向配設せしめて両面からの情報再生を
行ない得るように構成している。<Structure of the Invention> In order to achieve the above object, the magneto-optical storage element of the present invention includes a metal reflective film having a sufficient reflectance for light for information reproduction, and an amorphous magnetic material made of a rare earth element and a transition metal. The first and second magneto-optical memory elements each have a perpendicularly magnetized film having light-absorbing properties such as an alloy, and a protective layer. They are arranged facing each other so that they are on the outside, so that information can be reproduced from both sides.
以下、図面を参照して本発明の詳細な説明する。Hereinafter, the present invention will be described in detail with reference to the drawings.
第２図は、本発明の一実施例に用いられる記憶素子の一
構成例を示す側面図であり、ガラス、合成樹脂環装の基
板１の上面に、反射膜として作用するＡｕ製の蒸着膜２
を形成し、該蒸着膜２の上面にＧｄＴｂＦｅ、ＧｄＤｙ
Ｆｅ、ＴｂＦｅ、ＤｙＴｂＦｅ等アモルファスフェリ磁
性体製の簿膜３を形成し、更に該薄膜３上に保護膜′４
を形成している。FIG. 2 is a side view showing an example of the configuration of a memory element used in an embodiment of the present invention, in which a vapor-deposited film made of Au that acts as a reflective film is provided on the upper surface of the substrate 1 made of glass and synthetic resin. 2
GdTbFe, GdDy are formed on the upper surface of the vapor deposited film 2.
A protective film 3 made of an amorphous ferrimagnetic material such as Fe, TbFe, or DyTbFe is formed, and a protective film '4 is further formed on the thin film 3.
is formed.
例えば、保護膜４として厚さ約１，００ （ｌλの５ｉ
０２製の膜を用い、磁性体製の薄膜３として約４０ＯＡ
のＴｂＤｙＦｅの膜を用いた場合には、Ａｕ製の蒸着膜
２の有無に拘わらず反射率は３０％と変化せず、しかも
カー回転角は蒸着膜２を形成することにより０．１５度
から０．５度へと増加した。For example, the protective film 4 has a thickness of approximately 1,000 mm (5i of lλ)
Approximately 40 OA as the thin film 3 made of magnetic material using a film made of 02
When using a TbDyFe film, the reflectance remains unchanged at 30% regardless of the presence or absence of the Au vapor deposited film 2, and the Kerr rotation angle can be changed from 0.15 degrees by forming the vapor deposited film 2. The temperature increased to 0.5 degrees.
第３図は他の構成例を示す側面図であり、ガラス、合成
樹脂環装の基板１の上面にアモルファスフェリ磁性体製
の薄膜３を形成し、更に該薄膜３上に反射膜として作用
するＡＩ製の蒸着膜２を形成している。FIG. 3 is a side view showing another configuration example, in which a thin film 3 made of amorphous ferrimagnetic material is formed on the upper surface of the substrate 1 surrounded by glass or synthetic resin, and further acts as a reflective film on the thin film 3. A vapor deposited film 2 made of AI is formed.
例えば基板１としてコーニングマイクロシートを用い、
薄膜３としてＴｂＤｙＦｅを用いた場合には、Ａｌ製の
蒸着膜２の有無に拘わらず反射率は変化せず、カー回転
角は、蒸着膜２を形成することにより約３倍に増加した
。For example, using Corning microsheet as the substrate 1,
When TbDyFe was used as the thin film 3, the reflectance did not change regardless of the presence or absence of the vapor deposited film 2 made of Al, and the Kerr rotation angle increased approximately three times by forming the vapor deposited film 2.
第１図は本発明の一実施例を示す側面図であり、基板１
の上下両面に反射膜として作用する蒸着膜２．２を形成
し、更に該各蒸着膜２，２に磁性体製の薄膜３，３を形
成し、更には該薄膜３，３に保護膜４，４を夫々形成し
ている。FIG. 1 is a side view showing one embodiment of the present invention, in which a substrate 1
A vapor deposited film 2.2 acting as a reflective film is formed on both the upper and lower surfaces of the evaporated film 2. , 4 respectively.
即ち、本発明は例えば第２図、第３図に示した記憶素子
の２個を反射膜２が内側に対向するように配設構成した
ものである。That is, in the present invention, for example, two of the memory elements shown in FIGS. 2 and 3 are arranged so that the reflective films 2 face each other on the inside.
このように構成することにより基板１の上下両面から情
報の再生を行なうことができ、記憶容量が倍増する。With this configuration, information can be reproduced from both the upper and lower surfaces of the substrate 1, and the storage capacity is doubled.
この場合は、従来Ｓ／Ｎ比の点から両面使用が理論上に
おいてのみ可能であり、実用化されていなかったのに対
し、両面使用の実用化をなし得るという効果を奏する。In this case, double-sided use has conventionally been possible only theoretically in terms of the S/N ratio and has not been put into practical use, but the effect is that double-sided use can be put to practical use.
本発明は、以上の実施例に限定されるものではなく、反
射膜として作用する蒸着膜としてＡｕ、ＡＩ以外にＡｇ
誘電体製の多層膜等も使用可能であり、また磁性体製の
薄膜としてＳｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ。The present invention is not limited to the above-mentioned embodiments, and the present invention is not limited to the above-described embodiments.
Dielectric multilayer films can also be used, and magnetic thin films such as Sm, Eu, Gd, Tb, and Dy.
Ｈｏ、Ｅｒ等希土類とＦｅ、Ｃｏ、Ｎｉ等這移金属とを
種々の組成で混合した他のアモルファス磁性体、ＭｎＢ
１．ＭｎＢ１Ｃｕ等結晶体等製の薄膜が使用可能であり
、更には保護膜としてアクリル、ポリカーボネ−）ＣＲ
−３９等製の樹脂が使用可能であり、該保護膜の接着に
は紫外線硬化剤等を用いるものとする。Other amorphous magnetic materials, MnB, which are mixtures of rare earth elements such as Ho and Er and transitional metals such as Fe, Co, and Ni in various compositions.
1. Thin films made of crystals such as MnB1Cu can be used, and acrylic, polycarbonate (CR) etc. can be used as a protective film.
-39 or the like can be used, and an ultraviolet curing agent or the like is used to bond the protective film.
また、第２図にも示すように、保護膜として５ｉ０２等
の誘電体膜を用い、本発明によるＳ／Ｎ比増加の効果と
誘電体膜によるＳ／Ｎ比増加の効果との相乗効果を狙う
ことも可能である。Furthermore, as shown in FIG. 2, a dielectric film such as 5i02 is used as a protective film to achieve a synergistic effect between the effect of increasing the S/N ratio by the present invention and the effect of increasing the S/N ratio by the dielectric film. It is also possible to aim.
更に、本発明素子は、磁気円板状に限定される室形状に
形成することができる。Furthermore, the element of the present invention can be formed into a chamber shape that is limited to a magnetic disk shape.
更に、キューり点の低いＴｂＤｙＦｅ薄膜を記憶薄膜と
して用いれば高速記録が可能となる。Furthermore, if a TbDyFe thin film with a low cue point is used as a memory thin film, high-speed recording becomes possible.
〈発明の効果〉
以上のように、本発明は簡単な構成でありながら反射率
を何ら減少させることなくカー回転角を増加させてＳ／
Ｎ比の大幅な向上を図り得ると共に、両面からの情報の
再生を行なうことが出来、記憶容量が倍増するという特
有の効果を奏する。<Effects of the Invention> As described above, although the present invention has a simple configuration, the Kerr rotation angle can be increased without reducing the reflectance at all, and S/
Not only can the N ratio be greatly improved, information can be reproduced from both sides, and the storage capacity can be doubled, which is a unique effect.
第１図は本発明の一実施例の構成を示す側面図、第２図
及び第３図はそれぞれ本発明に適用可能な記憶孝子の構
成例を示す側面図である。
ｌ・・・基板、 ２・・・蒸着膜、 ３・・・薄膜、４
・・保護層。FIG. 1 is a side view showing the configuration of an embodiment of the present invention, and FIGS. 2 and 3 are side views each showing an example of the configuration of a memory filtration device applicable to the present invention. l...substrate, 2...deposited film, 3...thin film, 4
...Protective layer.
Claims (1)
反射膜と、希土類と遷移金属とから成るアモルファス磁
性体合金等の光吸収性を有する垂直磁化膜と、保護層と
を有する第１及び第２の磁気光学記憶素子を備え、 上記第１及び第２の磁気光学記憶素子を上記保護層が両
外側になるように対向配設せしめて両面からの情報再生
を行なうように成したことを特徴とする磁気光学記憶素
子。 ２、前記垂直磁化膜はＧｄＴｂＦｅアモルファス磁性体
合金より成ることを特徴とする特許請求の範囲第１項記
載の磁気光学記憶素子。[Scope of Claims] 1. A metal reflective film that has sufficient reflectivity for light for information reproduction, a perpendicular magnetization film that has light absorption properties such as an amorphous magnetic alloy made of a rare earth element and a transition metal, and a protective film. the first and second magneto-optical storage elements having a layer, and the first and second magneto-optic storage elements are disposed facing each other with the protective layers on both outer sides, so that information can be read from both sides. 1. A magneto-optical memory element characterized in that it is made as shown in FIG. 2. The magneto-optical memory element according to claim 1, wherein the perpendicularly magnetized film is made of a GdTbFe amorphous magnetic alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23155384A JPS60131660A (en) | 1984-11-01 | 1984-11-01 | Magneto-optical memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23155384A JPS60131660A (en) | 1984-11-01 | 1984-11-01 | Magneto-optical memory element |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8569580A Division JPS5712428A (en) | 1980-06-23 | 1980-06-23 | Magnetooptic storage element |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5332555A Division JP2672935B2 (en) | 1993-12-27 | 1993-12-27 | Magneto-optical storage element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60131660A true JPS60131660A (en) | 1985-07-13 |
Family
ID=16925300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23155384A Pending JPS60131660A (en) | 1984-11-01 | 1984-11-01 | Magneto-optical memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60131660A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5488604A (en) * | 1993-09-07 | 1996-01-30 | Pioneer Electronic Corporation | Magneto-optical disk having zero kerr rotation angle at room temperature |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54121719A (en) * | 1978-03-15 | 1979-09-21 | Nippon Hoso Kyokai <Nhk> | Magnetic recording medium |
| JPS5587332A (en) * | 1978-12-25 | 1980-07-02 | Matsushita Electric Ind Co Ltd | Magnetic light recording medium |
-
1984
- 1984-11-01 JP JP23155384A patent/JPS60131660A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54121719A (en) * | 1978-03-15 | 1979-09-21 | Nippon Hoso Kyokai <Nhk> | Magnetic recording medium |
| JPS5587332A (en) * | 1978-12-25 | 1980-07-02 | Matsushita Electric Ind Co Ltd | Magnetic light recording medium |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5488604A (en) * | 1993-09-07 | 1996-01-30 | Pioneer Electronic Corporation | Magneto-optical disk having zero kerr rotation angle at room temperature |
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