JPH0438055B2 - - Google Patents
Info
- Publication number
- JPH0438055B2 JPH0438055B2 JP57149808A JP14980882A JPH0438055B2 JP H0438055 B2 JPH0438055 B2 JP H0438055B2 JP 57149808 A JP57149808 A JP 57149808A JP 14980882 A JP14980882 A JP 14980882A JP H0438055 B2 JPH0438055 B2 JP H0438055B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- amorphous magnetic
- magnetic thin
- magneto
- reflective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 36
- 239000010408 film Substances 0.000 claims description 24
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 9
- 150000002910 rare earth metals Chemical class 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052723 transition metal Inorganic materials 0.000 claims description 4
- 150000003624 transition metals Chemical class 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- 230000005415 magnetization Effects 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012476 oxidizable substance Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Description
【発明の詳細な説明】
（技術範囲）
本発明はレーザ光を用いて情報の記録、再生、
消去を行なうことのできる磁気光学記憶素子に関
する。[Detailed Description of the Invention] (Technical Scope) The present invention uses laser light to record, reproduce, and record information.
The present invention relates to a magneto-optical memory element that can be erased.
（従来技術）
近年、情報の記録、再生、消去が可能な光記憶
素子の開発が磁気光学記憶素子を中心に活発に推
進されている。又、この磁気光学記憶素子の構造
で高い評価を受けているものとして反射膜構造の
素子がある。第１図に反射膜構造の素子の一例の
側面図を示す。同図で１はガラス、アクリル樹脂
等よりなる透明基板、２はSiO，SiO2，Si3N4等
の透明薄膜、３はGdTbFe，TbDyFe，GdCo，
TbFe，GdTbDyFe等の希土類、遷移金属合金か
らなる非晶質磁性体薄膜、４はSiO，SiO2，
Si3N4等の透明薄膜、５はCu，Al，Au，Ag等の
反射膜である。以上の反射膜構造の素子は非晶質
磁性体薄膜３の厚みを100Å程度と非常に薄くし
ている為透明基板１側から入射した入射レーザ光
が非晶質磁性体薄膜３を透過し該透過した光が反
射膜５にて反射される。従つて非晶質磁性体薄膜
３表面にて入射レーザ光が反射された光のカー効
果と上記した非晶質磁性体薄膜３を添過し該透過
した光が反射膜層５にて反射され再び非晶質磁性
体薄膜３を透過する光のフアラデー効果とが相乗
作用に起こしカー回転角の増大を得るものであ
る。又、透明薄膜２の内部で光が干渉しそれによ
つてもカー回転角の増大の作用を得るものであ
る。(Prior Art) In recent years, the development of optical storage elements capable of recording, reproducing, and erasing information has been actively promoted, centering on magneto-optical storage elements. Also, as a structure of this magneto-optical memory element, there is an element having a reflective film structure that is highly evaluated. FIG. 1 shows a side view of an example of an element having a reflective film structure. In the figure, 1 is a transparent substrate made of glass, acrylic resin, etc., 2 is a transparent thin film of SiO, SiO 2 , Si 3 N 4 , etc., 3 is GdTbFe, TbDyFe, GdCo,
Amorphous magnetic thin film made of rare earth and transition metal alloys such as TbFe and GdTbDyFe, 4 is SiO, SiO 2 ,
A transparent thin film such as Si 3 N 4 is used, and 5 is a reflective film made of Cu, Al, Au, Ag, etc. In the above reflective film structure element, the thickness of the amorphous magnetic thin film 3 is very thin, about 100 Å, so that the incident laser light incident from the transparent substrate 1 side is transmitted through the amorphous magnetic thin film 3. The transmitted light is reflected by the reflective film 5. Therefore, the Kerr effect of the incident laser beam reflected on the surface of the amorphous magnetic thin film 3 and the light transmitted through the above-mentioned amorphous magnetic thin film 3 are reflected by the reflective film layer 5. Again, the Faraday effect of the light transmitted through the amorphous magnetic thin film 3 works synergistically to increase the Kerr rotation angle. Further, the light interferes inside the transparent thin film 2, thereby increasing the Kerr rotation angle.
（発明が解決しようとする問題点）
上述の反射膜構造の素子は磁気光学効果の点か
ら見れば極めて優れた構造であるが、その一方で
非晶質磁性体薄膜３の酸化による特性劣化が大き
い事が難点であることが判明している。つまり、
反射膜５及び透明薄膜４を通過して外気が侵入し
非晶質磁性体薄膜３を酸化せしめる、あるいは反
射膜５、透明薄膜４内部に含まれていた酸素が非
晶質磁性体薄膜３を酸化せしめる現象が発生する
のである。非晶質磁性体薄膜３が酸化すれば保磁
力が低下し磁気光学効果による再生が困難となり
極端な場合は非晶質磁性体薄膜３の垂直磁気異方
性が全く無くなり記録、再生共に不可能となると
いう著しい不都合な問題が発生する。(Problems to be Solved by the Invention) The above-mentioned reflective film structure element has an extremely excellent structure from the viewpoint of the magneto-optic effect, but on the other hand, the characteristics deteriorate due to oxidation of the amorphous magnetic thin film 3. Being large has proven to be a problem. In other words,
Outside air may enter through the reflective film 5 and the transparent thin film 4 and oxidize the amorphous magnetic thin film 3, or the oxygen contained inside the reflective film 5 and the transparent thin film 4 may oxidize the amorphous magnetic thin film 3. An oxidation phenomenon occurs. If the amorphous magnetic thin film 3 oxidizes, the coercive force decreases, making reproduction by the magneto-optic effect difficult, and in extreme cases, the perpendicular magnetic anisotropy of the amorphous magnetic thin film 3 disappears completely, making both recording and reproduction impossible. A very inconvenient problem arises.
（問題点を解決する為の手段）
本発明は上記問題点を解決するために、透明基
板上に膜面に垂直な方向に磁化容易軸を有する希
土類・遷移金属合金からなる非晶質磁性体薄膜を
形成してなる磁気光学記憶素子において、前記非
晶質磁性体薄膜に近接する反射膜を備え、該反射
膜が酸化容易性金属であるTi，Mg、希土類金属
の少なくとも一つを含有することを特徴とするも
のであつて、反射膜中に含有したTi，Mg、希土
類金属等の酸化容易性金属物質によつて外部から
侵入する酸素を消費せしめ、非晶質磁性体薄膜の
酸化を防止して信頼性の高い磁気光学記憶素子を
提供するものである。(Means for Solving the Problems) In order to solve the above problems, the present invention provides an amorphous magnetic material made of a rare earth/transition metal alloy having an axis of easy magnetization perpendicular to the film surface on a transparent substrate. A magneto-optical memory element formed by forming a thin film, comprising a reflective film close to the amorphous magnetic thin film, the reflective film containing at least one of easily oxidizable metals Ti, Mg, and rare earth metals. This is characterized by the fact that easily oxidizable metal substances such as Ti, Mg, and rare earth metals contained in the reflective film consume oxygen that enters from the outside, thereby preventing oxidation of the amorphous magnetic thin film. The present invention provides a highly reliable magneto-optical memory element that prevents the above problems.
（実施例）
第２図に示すものは本発明に係る磁気光学記憶
素子の一実施例の側面図である。同図で１はガラ
ス、アクリル樹脂等よりなる透明基板、２は
SiO，SiO2，Si3N4等の透明薄膜、３はGdTbFe，
TbDyFe，GdCo，TbFe，GdTbDyFe等の希土
類、遷移金属合金からなる非晶質磁性体薄膜、４
はSiO，SiO2，Si3N4等の透明薄膜、５′はCu，
Al，Au，Ag，SUS等の金属膜中にTi，Mg、希
土類金属（Gd，Tb，Dy，Ho，Ｙ）等の酸化容
易性金属物質を含有した反射膜である。(Embodiment) What is shown in FIG. 2 is a side view of an embodiment of the magneto-optic memory element according to the present invention. In the figure, 1 is a transparent substrate made of glass, acrylic resin, etc., and 2 is a transparent substrate made of glass, acrylic resin, etc.
Transparent thin film of SiO, SiO 2 , Si 3 N 4 etc. 3 is GdTbFe,
Amorphous magnetic thin film made of rare earth and transition metal alloys such as TbDyFe, GdCo, TbFe, and GdTbDyFe, 4
is a transparent thin film such as SiO, SiO 2 , Si 3 N 4 , etc., 5' is Cu,
This is a reflective film containing easily oxidizable metal substances such as Ti, Mg, and rare earth metals (Gd, Tb, Dy, Ho, Y) in a metal film such as Al, Au, Ag, or SUS.
ここで上記酸化容易性金属物質の含有は透明薄
膜２に対して行なつてもよく、あるいは透明薄膜
４に対して行なつてもよく、あるいは透明薄膜２
透明薄膜４、反射膜５′の任意の２以上の膜に対
して行なつてもよい。又同図の構成において透明
薄膜２は無くとも構わない。 Here, the inclusion of the easily oxidizable metal substance may be carried out in the transparent thin film 2, or in the transparent thin film 4, or in the transparent thin film 2.
The treatment may be applied to any two or more of the transparent thin film 4 and the reflective film 5'. Furthermore, the transparent thin film 2 may be omitted in the configuration shown in the figure.
なお、本発明は非晶質磁性体薄膜の膜厚が十分
厚い（1000Å程度）厚膜形の構造の素子において
も適用が可能なものである。 The present invention can also be applied to an element having a thick film structure in which the amorphous magnetic thin film is sufficiently thick (approximately 1000 Å).
（効果）
以上のように、本発明によれば非晶質磁性体薄
膜に近接する反射膜中にTi，Mg、希土類金属等
の酸化容易性金属を含有するので、反射膜中の酸
化容易性金属が酸素を消費することによつて非晶
質磁性体薄膜の酸化を未然に防止することができ
る。これによつて、非晶質磁性体薄膜の磁気的特
性を安定化することができるので素子の信頼性を
著しく向上することができる。(Effects) As described above, according to the present invention, since easily oxidizable metals such as Ti, Mg, and rare earth metals are contained in the reflective film adjacent to the amorphous magnetic thin film, the reflective film is easily oxidized. Oxidation of the amorphous magnetic thin film can be prevented by the metal consuming oxygen. This makes it possible to stabilize the magnetic properties of the amorphous magnetic thin film, thereby significantly improving the reliability of the device.
第１図は従来の磁気光学記憶素子の側面図、第
２図は本発明に係る磁気光学記憶素子の一実施例
の側面図を示す。
図中、１……透明基板、２……透明薄膜、３…
…非晶質磁性体薄膜、４……透明薄膜、５……反
射膜、５′……酸化容易性物質を含有した反射膜。
FIG. 1 is a side view of a conventional magneto-optical memory element, and FIG. 2 is a side view of an embodiment of the magneto-optic memory element according to the present invention. In the figure, 1...transparent substrate, 2...transparent thin film, 3...
...Amorphous magnetic thin film, 4...Transparent thin film, 5...Reflective film, 5'...Reflective film containing an easily oxidizable substance.
Claims (1)
を有する希土類・遷移金属合金からなる非晶質磁
性体薄膜を形成してなる磁気光学記憶素子におい
て、 前記非晶質磁性体薄膜に近接する反射膜を備
え、 該反射膜が酸化容易性金属であるTi，Mg、希
土類金属の少なくとも一つを含有することを特徴
とする磁気光学記憶素子。[Scope of Claims] 1. A magneto-optical memory element formed by forming an amorphous magnetic thin film made of a rare earth/transition metal alloy having an axis of easy magnetization in a direction perpendicular to the film surface on a transparent substrate, comprising: 1. A magneto-optical memory element, comprising: a reflective film in close proximity to a magnetic thin film, the reflective film containing at least one of easily oxidizable metals Ti, Mg, and rare earth metals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14980882A JPS5938781A (en) | 1982-08-27 | 1982-08-27 | Magnetooptic storage element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14980882A JPS5938781A (en) | 1982-08-27 | 1982-08-27 | Magnetooptic storage element |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13644191A Division JPH0834014B2 (en) | 1991-06-07 | 1991-06-07 | Magneto-optical storage element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5938781A JPS5938781A (en) | 1984-03-02 |
| JPH0438055B2 true JPH0438055B2 (en) | 1992-06-23 |
Family
ID=15483158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14980882A Granted JPS5938781A (en) | 1982-08-27 | 1982-08-27 | Magnetooptic storage element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5938781A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH073363A (en) * | 1993-04-22 | 1995-01-06 | Mitsubishi Materials Corp | High corrosion resistant ag-mg alloy and thin film thereof |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766582B2 (en) * | 1985-01-26 | 1995-07-19 | 京セラ株式会社 | Magneto-optical recording element |
| JPS61208650A (en) * | 1985-03-13 | 1986-09-17 | Pioneer Electronic Corp | Photomagnetic recording medium |
| JPH0719396B2 (en) * | 1985-12-09 | 1995-03-06 | ソニー株式会社 | Information recording medium |
| JPS62217444A (en) * | 1986-03-17 | 1987-09-24 | Fujitsu Ltd | Photomagnetic disk |
| JP2527714B2 (en) * | 1986-02-21 | 1996-08-28 | 富士通株式会社 | Method of manufacturing optical recording medium |
| JPH07122938B2 (en) * | 1986-05-16 | 1995-12-25 | 株式会社日立製作所 | Magneto-optical recording medium |
| JPS63103514A (en) * | 1986-10-20 | 1988-05-09 | Fujitsu Ltd | Code pattern detection circuit |
| JP2527762B2 (en) * | 1987-09-07 | 1996-08-28 | 三菱化学株式会社 | Magneto-optical recording medium |
| JP2779521B2 (en) * | 1989-06-26 | 1998-07-23 | 富士写真フイルム株式会社 | Magneto-optical recording medium |
| CA2017284C (en) * | 1989-07-04 | 1995-10-03 | Kazutomi Suzuki | Optical recording medium |
| JPH0461043A (en) * | 1990-06-29 | 1992-02-27 | Nec Home Electron Ltd | Magneto-optical recording carrier |
| JPH05198026A (en) * | 1991-09-09 | 1993-08-06 | Shin Etsu Chem Co Ltd | Magneto-optical recording medium |
| DE69326525T2 (en) * | 1992-11-17 | 2000-01-27 | Mitsubishi Chem Corp | Magneto-optical recording medium and method for recording and reproducing optical information |
| EP2045631B1 (en) | 2006-11-17 | 2012-04-25 | Tanaka Kikinzoku Kogyo K.K. | Thin film for reflection film or semi-transparent reflection film, sputtering target and optical recording medium |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57120253A (en) * | 1981-01-14 | 1982-07-27 | Sharp Corp | Magnetooptical storage elemen |
-
1982
- 1982-08-27 JP JP14980882A patent/JPS5938781A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57120253A (en) * | 1981-01-14 | 1982-07-27 | Sharp Corp | Magnetooptical storage elemen |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH073363A (en) * | 1993-04-22 | 1995-01-06 | Mitsubishi Materials Corp | High corrosion resistant ag-mg alloy and thin film thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5938781A (en) | 1984-03-02 |
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