JPS60130151A - Manufacture of lead frame - Google Patents

Manufacture of lead frame

Info

Publication number
JPS60130151A
JPS60130151A JP23752683A JP23752683A JPS60130151A JP S60130151 A JPS60130151 A JP S60130151A JP 23752683 A JP23752683 A JP 23752683A JP 23752683 A JP23752683 A JP 23752683A JP S60130151 A JPS60130151 A JP S60130151A
Authority
JP
Japan
Prior art keywords
lead frame
tip
plating
area
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23752683A
Other languages
Japanese (ja)
Inventor
Fuminobu Noguchi
野口　文信
Sotaro Toki
土岐　荘太郎
Tomoo Narishima
智夫 成島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP23752683A priority Critical patent/JPS60130151A/en
Publication of JPS60130151A publication Critical patent/JPS60130151A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To inhibit the spreading of a noble metallic layer and reduce its consumed amount markedly by a method wherein, in plating a lead frame only in the region of wire bonding with a noble metal, the minus side of a DC power source is connected to the frame, plating liquid being dripped down to a bonding region from the tip of a metallic capillary, which is at the same time irradiated with laser beams. CONSTITUTION:An island part 2, a semiconductor chip mounting part constituting the lead frame 1, is held by hang leads 5, and noble metallic plating layers 4 are formed at the tips of many inner leads positioned around the island part 2. At this time, the metallic capillary 7 is arranged on top of the layer 4 forming part 6 of the tip 3, and is connected to the minus side of the DC power source, and the plus side is connected to the lead tip 3. Thereafter, the plating liquid is dripped down to the layer 4 from the tip of the capillary 7, which layer is at the same time irradiated with laser beams stopped down from a laser oscillation device 8, resulting in the reduction in the consumed amount of plating liquid.

Description

【発明の詳細な説明】 本発明は半導体集積回路（以下ＩＣと称す）のため蜘金
属めっき領域が必要最小限の面積であるリードフレーム
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a lead frame for semiconductor integrated circuits (hereinafter referred to as IC) in which the metal plating area has the minimum necessary area.

ＩＣリードフレームは４２合金（Ｎ　ｉ　４２］ｉｊ貰
％、残部Ｆｅ　）、コバール（Ｎｉ２９ｆＨ法％、Ｃ。The IC lead frame is made of 42 alloy (Ni 42] ij %, balance Fe), Kovar (Ni 29fH method %, C).

１７重量％、残部Ｆｅ）、リン青銅、その他鋼基合金の
ような高熱伝導性、強度を有するオレ刺をプレス打抜き
あるいはエソチンダにて所定のパターンを形成させた後
、アイランドｇｌｓ　（Ｉ　Ｃチップを乗せる部分）と
インナーリード先端部（ワイヤーボンディングする箇所
）に主ＶＣＩＣチップ、ワイヤーとの密着性を高める目
的で金あるいは銀などの貴金属を′電気絶縁性のマスク
治具等を１す２川して）慟分的にめっきしているのが一
般的である。After forming a predetermined pattern using press punching or esochinde, a predetermined pattern is formed using a high thermal conductivity and strength material such as phosphor bronze or other steel-based alloys (17% by weight, balance Fe), phosphor bronze, or other steel-based alloys. Place a precious metal such as gold or silver on the main VCIC chip and the inner lead tip (wire bonding area) and the inner lead tip (wire bonding area) with an electrically insulating mask jig, etc. ) It is common that the material is plated separately.

最近、ＩＣチップをアイランド部へ装着させる際、金あ
るいは銀粉を練り込んだペースト状の導電性樹脂を接着
剤として用いろ事が多くなり、この場合、アイランド部
には従来のように賞金ノ、・ｘｉめっきが必要ではなく
、インナーリードｔｆＢのみに施ぜば良いことになる。Recently, when attaching an IC chip to an island, paste-like conductive resin mixed with gold or silver powder is often used as an adhesive. - There is no need for xi plating, and it is sufficient to apply it only to the inner lead tfB.

この場合、めっきエリアはインナーリード先端から１　
ＩｎＩｎぐらいの幅であり、４！ｌｊ々工夫された電気
絶縁性マスク治具でめっきエリア以外の部分を保護して
、電気めっきを行っていた。′本発明は、インナーリー
ド先端部にのみめっきを施す際、高価な貴金属をさらに
必要最小限の使用ですむよう局所的に貴金属めっきを施
してなるリードフレームの製造方法を開示するものであ
る。In this case, the plating area is 1 minute from the tip of the inner lead.
It is about the width of InIn, and is 4! Electroplating was performed while protecting areas other than the plating area using a highly devised electrically insulating mask jig. 'The present invention discloses a method for manufacturing a lead frame in which precious metal plating is applied locally so that only the minimum amount of expensive precious metal is required when plating is applied only to the tips of the inner leads.

発明者等はＩＣチップとリードフレームのインナーリー
ド部の間をワイヤーボンディングする際、インナーリー
ドにワイヤーが接着する箇所はインナーリードの先端よ
り例えば０６〜０６陥の間にずぎないということに着目
し、この箇所だけに局ノッ［的に班金属めっきを施す方
法について鋭意研究の結果、レーザー光を使用してこれ
を行なう方法を見い出した。The inventors focused on the fact that when wire bonding is performed between an IC chip and an inner lead portion of a lead frame, the point where the wire is bonded to the inner lead is always between 06 and 06 from the tip of the inner lead. As a result of intensive research into a method of locally applying spot metal plating only to these areas, we discovered a method of doing this using laser light.

すｌ、ｃわち本発明はワイヤーボンディングを行なう領
域にのみ旨金属めっきを施したリードフレームの製造方
法において、１ツ１定形状のパターンが形成されたＩＪ
−ｌ−フレーム素体に直流電源のマイナスを接続し、又
そのプラスは金属製毛細管に接続し、金属製毛細管の先
端からは貴金属めっき液をワイヤボンティングを行な５
べき領域に供給するとともに、該領域にレーザ光を照射
しながら直流電圧を印加してワイヤボンディングを行な
うべき領域にのみ貴金属皮膜を形成することを特徴とす
るリードフレームの製造方法に関する。In other words, the present invention is a method for manufacturing a lead frame in which metal plating is applied only to the area where wire bonding is to be performed.
-l- Connect the negative terminal of a DC power source to the frame body, and connect the positive terminal to a metal capillary tube, and wire bond the noble metal plating solution from the tip of the metal capillary tube.
The present invention relates to a method for manufacturing a lead frame, characterized in that a noble metal film is formed only in a region where wire bonding is to be performed by applying a DC voltage while irradiating the region with a laser beam.

以下、本発明を図に従って詳細に説明する。Hereinafter, the present invention will be explained in detail with reference to the drawings.

第１図は本発明によって形成されるリードフレームであ
り、所定のパターンが形成されたリードフレーム素体１
において、アイランド部２にはめっきを施さず、インナ
ーリード先端部６の」二面に、該先端部３の上面の面積
より小さい領域を占める貴金属めっき層４を形成してな
り、該貴金属めっき層４がボンディングワイヤを接着さ
れる箇所として充分な広さを有している。第２図は本発
明σ）方法について示したものであり、インナーリード
先端部のめつき領域４の上方に金属製毛細管７を配・し
、その先端より貴金属めっき液をめっき領域４に滴下し
、液滴は金属製毛細管７の先端と接触している。金属製
毛細管７は直流電源のプラスに接続され、リードフレー
ムとは直接接触しなし・ようにしである。リードフレー
ムは直流電源のマイナスに接続されている。更にめっき
領域４を照射するレーザー光源８が上方に配置されてお
り、めっき領域４の形状に絞り込まれたレーザー光を照
射しつつ直流電圧な印加”−するものである。FIG. 1 shows a lead frame formed according to the present invention, and a lead frame body 1 on which a predetermined pattern is formed.
, the island portion 2 is not plated, and a noble metal plating layer 4 is formed on two sides of the inner lead tip 6, occupying an area smaller than the area of the upper surface of the tip 3, and the noble metal plating layer 4 has a sufficient width as a location to which a bonding wire is bonded. Fig. 2 shows the method σ) of the present invention, in which a metal capillary tube 7 is arranged above the plating region 4 at the tip of the inner lead, and a precious metal plating solution is dripped onto the plating region 4 from the tip. , the droplet is in contact with the tip of the metal capillary tube 7. The metal capillary tube 7 is connected to the positive terminal of the DC power source and is not in direct contact with the lead frame. The lead frame is connected to the negative terminal of the DC power supply. Further, a laser light source 8 for irradiating the plating region 4 is arranged above, and applies a DC voltage while irradiating the laser light focused on the shape of the plating region 4.

金属製毛細管７としてはステンレス、チタン、タンタル
、白金、ロジウムあるいはこれらを白金で被覆したもの
等が使用さバる。The metal capillary tube 7 may be made of stainless steel, titanium, tantalum, platinum, rhodium, or those coated with platinum.

このようにして局所的に貴金属めっきされたり−１−フ
レームは従来インナーリード先端部３の上面全体にめっ
きを施していたものと比べると高価な貴金属の使１ＴＩ
　址を大幅に減少することができる。In this way, the frame is locally plated with precious metals and is made of expensive precious metals compared to the conventional case where the entire upper surface of the inner lead tip 3 is plated.
The waste can be significantly reduced.

又、めっきが必要な領域に局部的に金属製毛細管から阻
金属めっき液を滴下してめっきを行なうため複雑１、「
形状のマスク冶具を必要としない、又レーザー利用めっ
きであるため極めて高速度のめっきを行うことかできる
。史にめっき液は必要最少限の鼠てよく、浸漬めっきと
比較してめっき液の建浴量な必要最少限におさえること
ができる。In addition, since plating is performed by locally dropping the metal-blocking plating solution from a metal capillary onto the area where plating is required, it is complicated.
It does not require a shaped mask jig, and since it uses laser plating, it can perform extremely high-speed plating. Historically, only the minimum amount of plating solution is required, and compared to immersion plating, the amount of plating solution required can be kept to the minimum required.

次に本発明の実施例をあげて本発明につき具体的に説明
する。Next, the present invention will be specifically explained with reference to Examples.

う＝に−１血イＩＪ１＋１ ０２５市厚の４２合金板を所定のパターンにエツチング
加工し、リードフレーム素体とした。このリードフレー
ム素体を直流電源のマイナスに接続し、所望のめっき領
域に内径Ｑ、　１　ａｎの白金製毛細管をリードフレー
ム素体に接触しない程度できりぎり　まで近づけた。そ
の白金製毛細管のもう一方の端は注射器に接続し、中に
シアン化金カリウム３０９／ｌ、クエン酸アンモニウム
４ｏｊｊ／Ｊ）、クエン酸４ｏｉ／Ａ、を含む金めつき
液を入れ、白金製毛細管の先端より押し出すようにした
。又、白金製毛細管には直流電源のプラスを接続した。A 42 alloy plate of 025 city thickness was etched into a predetermined pattern to form a lead frame body. This lead frame body was connected to the negative terminal of a DC power source, and a platinum capillary tube with an inner diameter of Q and 1 ann was brought as close as possible to the desired plating area without touching the lead frame body. The other end of the platinum capillary tube is connected to a syringe, and a gold plating solution containing 309 gold potassium cyanide/l, ammonium citrate 4 ojj/J), and citric acid 4 oi/A is poured into the syringe. It was made to be pushed out from the tip of the capillary. In addition, the positive terminal of a DC power supply was connected to the platinum capillary tube.

一方、リードフレームの上方には発振波長１０６μｍビ
ーム径Ｏ，５ｍｍφの炭酸ガスレーザー発振装置を配置
した。On the other hand, above the lead frame, a carbon dioxide laser oscillation device with an oscillation wavelength of 106 μm, a beam diameter of O, and 5 mmφ was arranged.

次に直流電源をオンにし２■の電圧を臼」加し、白金製
毛細管の先端よりめっき液を押し出ずど同時に、このめ
っき領域にレーザー光を照射した。Next, the DC power source was turned on, a voltage of 2 µm was applied, and the plating solution was not pushed out from the tip of the platinum capillary tube, but at the same time the plating area was irradiated with laser light.

この操作はめっき領域１箇所につき、０５秒間行ない、
ついで水洗、乾燥を行った。これによってリードフレー
ムのワイヤーボンディングが行われるべき領域に直径０
．３　ａｎで約１μ厚の全皮膜な形成することができ、
局部的にめっきを施したリードフレームを得ることがで
きた。This operation is performed for 05 seconds per plating area,
Then, it was washed with water and dried. This allows the lead frame to have a diameter of 0 in the area where wire bonding is to be performed.
．． A full film with a thickness of about 1 μm can be formed at 3 an
A locally plated lead frame could be obtained.

実施例２ ０、２５　ｍｎ＋厚のＣＴ’）Ａ１ｑ４合金（Ｆｅ　：
　２．３重量％、ｐ　：　ｏ、　ｏ　ｓ　１＞量％、Ｚ
ｎ　：Ｏ，１重量％、Ｃｕ残）板を所定のパターンにエ
ツチング加工し、リードフレームＸ体とした。このリー
ドフレーム素体を直流電源のマイナスに接続し、内径０
．０５　ｎｕｎの白金製毛細管を所望のめっき領域にリ
ードフレーム素体に接触しない程度にぎりぎりまで近づ
けた。Example 2 0, 25 mn+thick CT') A1q4 alloy (Fe:
2.3% by weight, p: o, o s 1>% by weight, Z
The plate (n: O, 1% by weight, residual Cu) was etched into a predetermined pattern to form a lead frame X body. Connect this lead frame body to the negative terminal of the DC power supply, and
．． A 05 nun platinum capillary tube was brought as close as possible to the desired plating area without coming into contact with the lead frame body.

その白金製毛細管のもう一方の端は注射器に接続し、中
（ｚこシアン化銀カリウム７０　ｇ／４を含む市販のめ
っき液５−９００（日本エンゲルハルト社製）を人ｉｔ
、白金製毛細管の先端より押し出すよ’）　、（ＩＣｌ
、た。又、白金製毛細管には直流電源のプラスを接続し
た。一方、リードフレームの上方には発振波長１０．６
μｍ１７、ビーム径Ｑ、１５ｆｌφの炭酸カスレーザー
発振装置を配置した。The other end of the platinum capillary tube was connected to a syringe, and a commercially available plating solution 5-900 (manufactured by Engelhard Japan) containing 70 g/4 potassium silver cyanide was injected into the syringe.
, (ICl
,Ta. In addition, the positive terminal of a DC power supply was connected to the platinum capillary tube. On the other hand, the oscillation wavelength 10.6 is located above the lead frame.
A carbon dioxide gas laser oscillation device with a beam diameter of 17 μm and a beam diameter of Q of 15 flφ was arranged.

次に直流電源をオンにし、６■の電圧を印加し、白金製
毛細管の先端よりめっき液を押し出すと同時にこのめっ
き領域にレーザー光を照射した。Next, the DC power source was turned on, a voltage of 6 µm was applied, and the plating solution was pushed out from the tip of the platinum capillary tube, and at the same time, the plating area was irradiated with laser light.

この操作はめっき領域一箇所につき、０５秒間行い、つ
いで水洗、乾燥を行った。これによってリードフレーム
のワイヤーボンディングが行われイ）べき領域に直径０
．１５１１１７１１で約４５μ厚の銀皮膜を形成するこ
とができ、局部的にめっきを施したリードフレームを得
ることができた。This operation was performed for 05 seconds for each plating area, followed by washing with water and drying. This allows wire bonding of the lead frame to be performed a) with a diameter of 0 in the area to be
．． With 15111711, a silver film with a thickness of approximately 45 μm could be formed, and a locally plated lead frame could be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、本発明によって形成されるリードフレームの
一実施例を示す部分拡大斜視図であり、第２図は本発明
のリードフレームの製造方法の一例を示す説明図である
。 １・・・リードフレーム　２・・・アイランド）４１３
６゛°°インナ一リード先端部　４・・貴金属めっき層
５　・　・　つ　リ　リ　−　ド　６　・・・　うし、
１井シフ・・・金属製毛細管　８・・レーザー発振装［
６特許出願人 凸版印刷株式会社 代表者　銘　木　和　夫　・FIG. 1 is a partially enlarged perspective view showing an embodiment of a lead frame formed according to the present invention, and FIG. 2 is an explanatory diagram showing an example of a method for manufacturing a lead frame according to the present invention. 1... Lead frame 2... Island) 413
6゛°° Inner lead tip 4... Precious metal plating layer 5... Re-lead 6... Cow,
1 Well Schiff... Metal capillary tube 8... Laser oscillation device [
6 Patent Applicant Toppan Printing Co., Ltd. Representative Kazuo Meiki ・

Claims (1)

【特許請求の範囲】[Claims] ワイヤーボンディングを行う領域にのみ、貴金属めっき
を施したリードフレームの製造方法において、所定形状
のパターンが形成されたリードフレーム素体に直流電源
のマイナスを接続し、直流′電源のプラスを接続した金
属製毛細管の先端より貴金属めっき液をワイヤーボンデ
ィングを行うべき領域に供給するとともに、該領域にレ
ーザー光を照射しｌ工がらｉ自流電圧をｕ１加して、ワ
イヤーボンディングを行うべき領域にのみ貴金属皮膜を
形成すイ）ことを特徴とするり一ドフレームの製造方法
。In the manufacturing method of a lead frame in which precious metal plating is applied only to the area where wire bonding is to be performed, the negative terminal of a DC power source is connected to the lead frame body on which a pattern of a predetermined shape is formed, and the positive terminal of a DC power source is connected to a metal. A precious metal plating solution is supplied from the tip of the capillary tube to the area where wire bonding is to be performed, and the area is irradiated with a laser beam while a self-current voltage is applied to form a precious metal coating only on the area where wire bonding is to be performed. 1) A method for manufacturing a bonded frame, characterized in that:
JP23752683A 1983-12-16 1983-12-16 Manufacture of lead frame Pending JPS60130151A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23752683A JPS60130151A (en) 1983-12-16 1983-12-16 Manufacture of lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23752683A JPS60130151A (en) 1983-12-16 1983-12-16 Manufacture of lead frame

Publications (1)

Publication Number Publication Date
JPS60130151A true JPS60130151A (en) 1985-07-11

Family

ID=17016632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23752683A Pending JPS60130151A (en) 1983-12-16 1983-12-16 Manufacture of lead frame

Country Status (1)

Country Link
JP (1) JPS60130151A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02205062A (en) * 1989-02-02 1990-08-14 Nec Kyushu Ltd Lead frame
JP2010073830A (en) * 2008-09-17 2010-04-02 Sumitomo Metal Mining Co Ltd Lead frame and method of manufacturing same
JP2012514326A (en) * 2008-12-24 2012-06-21 エルジー イノテック カンパニー リミテッド Multi-row lead frame and method of manufacturing semiconductor package using the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5254626A (en) * 1975-10-30 1977-05-04 Western Electric Co Electroplating method
JPS5438235A (en) * 1977-09-01 1979-03-22 Inoue Japax Res Inc Electrodeposition working method
JPS57200590A (en) * 1981-06-05 1982-12-08 Inoue Japax Res Inc Electroplating apparatus
JPS57203789A (en) * 1981-06-11 1982-12-14 Inoue Japax Res Inc Partial plating device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5254626A (en) * 1975-10-30 1977-05-04 Western Electric Co Electroplating method
JPS5438235A (en) * 1977-09-01 1979-03-22 Inoue Japax Res Inc Electrodeposition working method
JPS57200590A (en) * 1981-06-05 1982-12-08 Inoue Japax Res Inc Electroplating apparatus
JPS57203789A (en) * 1981-06-11 1982-12-14 Inoue Japax Res Inc Partial plating device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02205062A (en) * 1989-02-02 1990-08-14 Nec Kyushu Ltd Lead frame
JP2010073830A (en) * 2008-09-17 2010-04-02 Sumitomo Metal Mining Co Ltd Lead frame and method of manufacturing same
JP2012514326A (en) * 2008-12-24 2012-06-21 エルジー イノテック カンパニー リミテッド Multi-row lead frame and method of manufacturing semiconductor package using the same
US8956919B2 (en) 2008-12-24 2015-02-17 Lg Innotek Co., Ltd. Structure for multi-row leadframe and semiconductor package thereof and manufacture method thereof

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