JPS60127715A - 垂直磁化磁性薄膜の製造方法 - Google Patents

Info

Publication number

JPS60127715A

JPS60127715A JP23700483A JP23700483A JPS60127715A JP S60127715 A JPS60127715 A JP S60127715A JP 23700483 A JP23700483 A JP 23700483A JP 23700483 A JP23700483 A JP 23700483A JP S60127715 A JPS60127715 A JP S60127715A

Authority

JP

Japan

Prior art keywords

thin film

substrate

film

magnetic thin

surface temperature

Prior art date

1983-12-14

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

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• 239000010409 thin film Substances 0.000 title claims abstract description 78
• 230000005291 magnetic effect Effects 0.000 title claims abstract description 59
• 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
• 239000000758 substrate Substances 0.000 claims abstract description 50
• 239000010408 film Substances 0.000 claims abstract description 28
• 230000005415 magnetization Effects 0.000 claims abstract description 26
• 239000000203 mixture Substances 0.000 claims abstract description 26
• 238000001816 cooling Methods 0.000 claims abstract description 15
• 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
• 239000000956 alloy Substances 0.000 claims abstract description 13
• 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 13
• 229910052723 transition metal Inorganic materials 0.000 claims abstract description 6
• 150000003624 transition metals Chemical class 0.000 claims description 3
• 238000010438 heat treatment Methods 0.000 abstract description 11
• 239000013078 crystal Substances 0.000 abstract description 7
• 229910052779 Neodymium Inorganic materials 0.000 abstract description 6
• 229910052684 Cerium Inorganic materials 0.000 abstract description 4
• 229910052777 Praseodymium Inorganic materials 0.000 abstract description 3
• 229910052772 Samarium Inorganic materials 0.000 abstract description 3
• 238000007733 ion plating Methods 0.000 abstract description 2
• 229910052727 yttrium Inorganic materials 0.000 abstract description 2
• 230000007423 decrease Effects 0.000 abstract 1
• 229910000687 transition metal group alloy Inorganic materials 0.000 abstract 1
• 238000000034 method Methods 0.000 description 12
• XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
• 230000001965 increasing effect Effects 0.000 description 7
• 230000015572 biosynthetic process Effects 0.000 description 6
• 229910052786 argon Inorganic materials 0.000 description 4
• 239000007789 gas Substances 0.000 description 4
• 238000004544 sputter deposition Methods 0.000 description 4
• 229910000765 intermetallic Inorganic materials 0.000 description 3
• 239000010453 quartz Substances 0.000 description 3
• 150000002910 rare earth metals Chemical class 0.000 description 3
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
• 238000002441 X-ray diffraction Methods 0.000 description 2
• 238000010586 diagram Methods 0.000 description 2
• 239000011261 inert gas Substances 0.000 description 2
• 239000000463 material Substances 0.000 description 2
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• 239000013081 microcrystal Substances 0.000 description 2
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• 102100024370 Integrator complex subunit 11 Human genes 0.000 description 1
• BAWFJGJZGIEFAR-NNYOXOHSSA-N NAD zwitterion Chemical compound NC(=O)C1=CC=C[N+]([C@H]2[C@@H]([C@H](O)[C@@H](COP([O-])(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=C1 BAWFJGJZGIEFAR-NNYOXOHSSA-N 0.000 description 1
• CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
• QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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• 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
• 239000010703 silicon Substances 0.000 description 1
• 229910052710 silicon Inorganic materials 0.000 description 1
• 229910052717 sulfur Inorganic materials 0.000 description 1
• 238000007738 vacuum evaporation Methods 0.000 description 1
• 238000007740 vapor deposition Methods 0.000 description 1