JPS60123082A - 半導体レ−ザ素子 - Google Patents

半導体レ−ザ素子

Info

Publication number
JPS60123082A
JPS60123082A JP58231685A JP23168583A JPS60123082A JP S60123082 A JPS60123082 A JP S60123082A JP 58231685 A JP58231685 A JP 58231685A JP 23168583 A JP23168583 A JP 23168583A JP S60123082 A JPS60123082 A JP S60123082A
Authority
JP
Japan
Prior art keywords
layer
substrate
current
groove
inhibiting layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58231685A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0550158B2 (enExample
Inventor
Saburo Yamamoto
三郎 山本
Hiroshi Hayashi
寛 林
Taiji Morimoto
泰司 森本
Morichika Yano
矢野　盛規
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP58231685A priority Critical patent/JPS60123082A/ja
Priority to DE8484114366T priority patent/DE3484266D1/de
Priority to US06/675,849 priority patent/US4937836A/en
Priority to EP84114366A priority patent/EP0143460B1/en
Publication of JPS60123082A publication Critical patent/JPS60123082A/ja
Publication of JPH0550158B2 publication Critical patent/JPH0550158B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP58231685A 1983-11-30 1983-12-06 半導体レ−ザ素子 Granted JPS60123082A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58231685A JPS60123082A (ja) 1983-12-06 1983-12-06 半導体レ−ザ素子
DE8484114366T DE3484266D1 (de) 1983-11-30 1984-11-28 Halbleiterlaser-vorrichtung und verfahren zu deren herstellung.
US06/675,849 US4937836A (en) 1983-11-30 1984-11-28 Semiconductor laser device and production method therefor
EP84114366A EP0143460B1 (en) 1983-11-30 1984-11-28 Semiconductor laser device and production method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58231685A JPS60123082A (ja) 1983-12-06 1983-12-06 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS60123082A true JPS60123082A (ja) 1985-07-01
JPH0550158B2 JPH0550158B2 (enExample) 1993-07-28

Family

ID=16927383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58231685A Granted JPS60123082A (ja) 1983-11-30 1983-12-06 半導体レ−ザ素子

Country Status (1)

Country Link
JP (1) JPS60123082A (enExample)

Also Published As

Publication number Publication date
JPH0550158B2 (enExample) 1993-07-28

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