JPS60123024A - 液相エピタキシャル結晶成長方法および装置 - Google Patents

液相エピタキシャル結晶成長方法および装置

Info

Publication number
JPS60123024A
JPS60123024A JP23182283A JP23182283A JPS60123024A JP S60123024 A JPS60123024 A JP S60123024A JP 23182283 A JP23182283 A JP 23182283A JP 23182283 A JP23182283 A JP 23182283A JP S60123024 A JPS60123024 A JP S60123024A
Authority
JP
Japan
Prior art keywords
substrate crystal
melt
crystal
retaining plate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23182283A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0476204B2 (enrdf_load_stackoverflow
Inventor
Kenji Maruyama
研二 丸山
Michiharu Ito
伊藤　道春
Mitsuo Yoshikawa
吉河　満男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23182283A priority Critical patent/JPS60123024A/ja
Publication of JPS60123024A publication Critical patent/JPS60123024A/ja
Publication of JPH0476204B2 publication Critical patent/JPH0476204B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02411—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP23182283A 1983-12-08 1983-12-08 液相エピタキシャル結晶成長方法および装置 Granted JPS60123024A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23182283A JPS60123024A (ja) 1983-12-08 1983-12-08 液相エピタキシャル結晶成長方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23182283A JPS60123024A (ja) 1983-12-08 1983-12-08 液相エピタキシャル結晶成長方法および装置

Publications (2)

Publication Number Publication Date
JPS60123024A true JPS60123024A (ja) 1985-07-01
JPH0476204B2 JPH0476204B2 (enrdf_load_stackoverflow) 1992-12-03

Family

ID=16929558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23182283A Granted JPS60123024A (ja) 1983-12-08 1983-12-08 液相エピタキシャル結晶成長方法および装置

Country Status (1)

Country Link
JP (1) JPS60123024A (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5159074A (ja) * 1974-11-20 1976-05-22 Tokyo Shibaura Electric Co Ekisoseichosochi
JPS5228107A (en) * 1975-08-28 1977-03-02 Taiho Kensetsu Kk Excavating bucket

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5159074A (ja) * 1974-11-20 1976-05-22 Tokyo Shibaura Electric Co Ekisoseichosochi
JPS5228107A (en) * 1975-08-28 1977-03-02 Taiho Kensetsu Kk Excavating bucket

Also Published As

Publication number Publication date
JPH0476204B2 (enrdf_load_stackoverflow) 1992-12-03

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