JPS60120600U - memory circuit - Google Patents

memory circuit

Info

Publication number
JPS60120600U
JPS60120600U JP13690984U JP13690984U JPS60120600U JP S60120600 U JPS60120600 U JP S60120600U JP 13690984 U JP13690984 U JP 13690984U JP 13690984 U JP13690984 U JP 13690984U JP S60120600 U JPS60120600 U JP S60120600U
Authority
JP
Japan
Prior art keywords
input
output path
output
memory cells
path line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13690984U
Other languages
Japanese (ja)
Inventor
白土 元
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP13690984U priority Critical patent/JPS60120600U/en
Publication of JPS60120600U publication Critical patent/JPS60120600U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の1トランジスタメモリシステムのブロッ
ク図、第2図は第1図の1トランジスタメモリ回路の1
部を示す図、第3図、第4図は増幅周辺の波形図、第5
図は本考案の実施例の1トランジスタメモリシステムブ
ロック図、第6図は第5図の1部を示す図、第7図、第
8図に本考案の実施例の増幅器周辺の波形図である。 図において、10はメモリセル、11はダミーセル、1
3.13’はI10バス、12.14は増幅器、15.
15’はデコーダ16は桁線をそれぞれ示す。 味− L−一− ペ 酬と 不3日   ′− !  i−1、汁7,7゜ ! i、I   I    I  ψ2!1m1−] iT I □i   ゛ 1■l。 ・1 r     ’1 〜  ■■ よ27[]1 一一一一一 十 ゝ、 ゝ、 ゝ、 猪腕l;へろ− べ°ルアラフ。 !    −m− 2−一一一一一 \
Figure 1 is a block diagram of a conventional one-transistor memory system, and Figure 2 is a block diagram of the one-transistor memory circuit in Figure 1.
Figures 3 and 4 are waveform diagrams around the amplification area.
The figure is a block diagram of a one-transistor memory system according to an embodiment of the present invention, FIG. 6 is a diagram showing a part of FIG. 5, and FIGS. 7 and 8 are waveform diagrams around an amplifier according to an embodiment of the present invention. . In the figure, 10 is a memory cell, 11 is a dummy cell, 1
3.13' is the I10 bus, 12.14 is the amplifier, 15.
15' indicates the digit line of the decoder 16, respectively. Taste-L-1-Pe exchange and non-3 days'-! i-1, soup 7.7°! i, I I I ψ2!1m1-] iT I □i ゛1■l.・ 1 R '1 ~ ■■ Yo 27 [] 1 1 1111110, ゝ, boar arm L; ! -m- 2-1111\

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 行と列とをなして配列されたメモリセルを有し該メモリ
セル配列が°第1および第2の行群に分割されたメモリ
セル群と、それぞれ第1および第2の入力を有し、該第
1の入力には該第1の行群に属するメモリセルからの読
み出し情報が供給される主うになされ、該第2の入力に
は該第2の行群に属するメモリセルからの読み出し情報
が供給されるようになされた複数の差動増幅回路と、第
1の入出力パスラインと、第2の入出力パスラインと、
第1および第2の入力がそれぞれ上記第1および第2の
入出力パスラインと第1および第2のスイッチをそれぞ
れ介して接続されるようになされた出力増幅回路と、該
差動増幅回路のうち選択された差動増幅回路の第1の出
力を該第1の入出力パスラインに供給する手段と、該選
択された差動増幅回路の第2の出力を上記第2の入出力
パスラインに供給する手段と、前記第1および第2の入
出力パスラインに第3および第4のスイッチをそれぞれ
介して接続される書込み入力供給手段とを含むことを特
徴とするメモリ回路。
having memory cells arranged in rows and columns, the memory cell array having a group of memory cells divided into first and second groups of rows, and first and second inputs, respectively; The first input is supplied with read information from memory cells belonging to the first row group, and the second input is supplied with read information from memory cells belonging to the second row group. a plurality of differential amplifier circuits, a first input/output path line, a second input/output path line,
an output amplifier circuit whose first and second inputs are respectively connected to the first and second input/output path lines via the first and second switches; means for supplying a first output of the selected differential amplifier circuit to the first input/output path line; and means for supplying a second output of the selected differential amplifier circuit to the second input/output path line. and write input supply means connected to the first and second input/output path lines via third and fourth switches, respectively.
JP13690984U 1984-09-10 1984-09-10 memory circuit Pending JPS60120600U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13690984U JPS60120600U (en) 1984-09-10 1984-09-10 memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13690984U JPS60120600U (en) 1984-09-10 1984-09-10 memory circuit

Publications (1)

Publication Number Publication Date
JPS60120600U true JPS60120600U (en) 1985-08-14

Family

ID=30695340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13690984U Pending JPS60120600U (en) 1984-09-10 1984-09-10 memory circuit

Country Status (1)

Country Link
JP (1) JPS60120600U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier

Similar Documents

Publication Publication Date Title
EP0023329A3 (en) Semiconductor memory device
JPS5986097U (en) random access memory
JPH0793002B2 (en) Memory integrated circuit
EP0121726A3 (en) Multi-port memory cell and system
EP0101884A3 (en) Monolithic semiconductor memory
GB1322990A (en) Integrated circuit devices
JP3850938B2 (en) Semiconductor memory device
KR960019297A (en) Semiconductor memory
JPS60120600U (en) memory circuit
IE892758L (en) Integrated memory circuit comprising a parallel and serial¹input and output
JPS60120599U (en) memory circuit
JPS60120598U (en) memory circuit
JPS591198U (en) memory circuit
JPS63161596A (en) Semiconductor memory device
JPS63244392A (en) Semiconductor memory device
JPS6037760Y2 (en) semiconductor storage device
JPS6064500U (en) memory circuit
JPS6198296U (en)
JPS63292490A (en) Semiconductor storage device
JPS62117796U (en)
JP3103934B2 (en) Semiconductor storage device
JPS58114600U (en) semiconductor memory element
JPH0265294U (en)
JPS6155299U (en)
FR2337917A1 (en) Direct access semiconductor memory - has input and output registers and column and row address registers (SW 4.7.77)