JPS60118690A - 結晶成長方法 - Google Patents

結晶成長方法

Info

Publication number
JPS60118690A
JPS60118690A JP22519583A JP22519583A JPS60118690A JP S60118690 A JPS60118690 A JP S60118690A JP 22519583 A JP22519583 A JP 22519583A JP 22519583 A JP22519583 A JP 22519583A JP S60118690 A JPS60118690 A JP S60118690A
Authority
JP
Japan
Prior art keywords
substrate
crystal
substance
compound
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22519583A
Other languages
English (en)
Japanese (ja)
Other versions
JPH052638B2 (enExample
Inventor
Katsunobu Aoyanagi
克信 青柳
Susumu Nanba
難波　進
Yuzaburo Segawa
勇三郎 瀬川
Sohachi Iwai
岩井　荘八
Konen Doi
土居　功年
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN
Original Assignee
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN filed Critical RIKEN
Priority to JP22519583A priority Critical patent/JPS60118690A/ja
Publication of JPS60118690A publication Critical patent/JPS60118690A/ja
Publication of JPH052638B2 publication Critical patent/JPH052638B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP22519583A 1983-11-29 1983-11-29 結晶成長方法 Granted JPS60118690A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22519583A JPS60118690A (ja) 1983-11-29 1983-11-29 結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22519583A JPS60118690A (ja) 1983-11-29 1983-11-29 結晶成長方法

Publications (2)

Publication Number Publication Date
JPS60118690A true JPS60118690A (ja) 1985-06-26
JPH052638B2 JPH052638B2 (enExample) 1993-01-12

Family

ID=16825455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22519583A Granted JPS60118690A (ja) 1983-11-29 1983-11-29 結晶成長方法

Country Status (1)

Country Link
JP (1) JPS60118690A (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131866A (en) * 1978-04-05 1979-10-13 Nippon Telegr & Teleph Corp <Ntt> Heat treatment device
JPS56109895A (en) * 1980-01-30 1981-08-31 Hitachi Ltd Gaseous phase growing method for semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131866A (en) * 1978-04-05 1979-10-13 Nippon Telegr & Teleph Corp <Ntt> Heat treatment device
JPS56109895A (en) * 1980-01-30 1981-08-31 Hitachi Ltd Gaseous phase growing method for semiconductor

Also Published As

Publication number Publication date
JPH052638B2 (enExample) 1993-01-12

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