JPS6011650Y2 - electronic circuit equipment - Google Patents

electronic circuit equipment

Info

Publication number
JPS6011650Y2
JPS6011650Y2 JP10036979U JP10036979U JPS6011650Y2 JP S6011650 Y2 JPS6011650 Y2 JP S6011650Y2 JP 10036979 U JP10036979 U JP 10036979U JP 10036979 U JP10036979 U JP 10036979U JP S6011650 Y2 JPS6011650 Y2 JP S6011650Y2
Authority
JP
Japan
Prior art keywords
resin
integrated circuit
hybrid integrated
sealed
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10036979U
Other languages
Japanese (ja)
Other versions
JPS5619041U (en
Inventor
良一 奥田
友厚 牧野
勝輝 三輪
昇 山本
Original Assignee
株式会社デンソー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社デンソー filed Critical 株式会社デンソー
Priority to JP10036979U priority Critical patent/JPS6011650Y2/en
Publication of JPS5619041U publication Critical patent/JPS5619041U/ja
Application granted granted Critical
Publication of JPS6011650Y2 publication Critical patent/JPS6011650Y2/en
Expired legal-status Critical Current

Links

Description

【考案の詳細な説明】 本考案は、大電力電子回路装置に関する。[Detailed explanation of the idea] The present invention relates to high power electronic circuit devices.

従来の大電力を取扱う電子回路装置においては、大電力
素子としては一般にハーメチック型大電力素子を用いこ
れを他の回路構成素子、例えば混成集積回路と共にプリ
ント板に装着して電子回路を構成していた。
In conventional electronic circuit devices that handle high power, a hermetic high power device is generally used as the high power device, and this is mounted on a printed board together with other circuit components, such as a hybrid integrated circuit, to form an electronic circuit. Ta.

しかし、このような構造では、ハーメチック型入電子素
子の金属キャップと反対側にその出力端子が位置してい
るため大電力素子を搭載するプリント板1こ対して搭載
する側の反対側において出力端子のための電気配線を行
なう必要があり、また、ハーメチック型大電力素子を保
護するための外囲器が必要であり、このため電子回路装
置の小型化、薄型化及び軽量化が困難であった。
However, in such a structure, the output terminal is located on the side opposite to the metal cap of the hermetic type electronic element, so the output terminal is located on the side opposite to the printed board on which the high power element is mounted. In addition, an envelope was required to protect the hermetic high-power elements, making it difficult to make electronic circuit devices smaller, thinner, and lighter. .

本考案の目的は、小型、軽量化した大電力を扱う電子回
路装置を提供することである。
An object of the present invention is to provide an electronic circuit device that is small and lightweight and handles large amounts of power.

本考案においては、開口部を有する金属製外囲器の底部
に、樹脂封じ大電力半導体素子をその接続用端子を上記
金属製外囲器の開口部に面して取り付け、上記大電力素
子と共に電力回路を構成する混成集積回路を同様にその
接続用端子を上記開口部に面して取り付け、上記混成集
積回路を弾性樹脂で覆って保護したのち、注入型樹脂を
上記開口部から注入して上記大電力素子の少くとも一部
及び上記混成集積回路を覆って上記金属製外囲器内に密
封している。
In the present invention, a resin-sealed high-power semiconductor element is attached to the bottom of a metal envelope having an opening, with its connecting terminals facing the opening of the metal envelope, and together with the high-power element. Similarly, the hybrid integrated circuit constituting the power circuit is attached with its connection terminal facing the opening, the hybrid integrated circuit is covered and protected with an elastic resin, and then an injection resin is injected through the opening. At least a portion of the high power device and the hybrid integrated circuit are covered and sealed within the metal envelope.

□本考案の実施例を以下図面を参照して説明する。 □Examples of the present invention will be described below with reference to the drawings.

第1図、及び第2図において、1は大電力樹脂封じ半導
体素子で金属製出力端子1a〜1cを有し、樹脂1dで
固定されている。
In FIGS. 1 and 2, reference numeral 1 denotes a high-power resin-sealed semiconductor element having metal output terminals 1a to 1c and fixed with resin 1d.

12は金属製外囲器で開口部12aを有する箱形で底部
12bは、そこに取り付けるべき大電力半導体素子及び
混成集積回路の形状1.大、きさ等によって適宜段部が
設けである。
Reference numeral 12 denotes a metal envelope in the shape of a box having an opening 12a, and a bottom portion 12b containing the shape of the high-power semiconductor element and hybrid integrated circuit to be attached thereto. Steps are provided as appropriate depending on size, size, etc.

大電力樹脂封じ半導体素子1は底部12bの高い段部に
セラミック基板またはマイカ板等の熱伝導性絶縁体2を
介して電気的に絶縁して接着剤またはネジ止め等で固着
し、出力端子1a〜1cは開口部12aに面するように
しである。
The high-power resin-sealed semiconductor device 1 is electrically insulated and fixed to the high step of the bottom 12b with an adhesive or screws via a heat conductive insulator 2 such as a ceramic substrate or a mica plate, and the output terminal 1a 1c is arranged to face the opening 12a.

3は混成集積回路で、基板3a上に導体4及び抵抗5を
印刷等の手段で形威し、また半田付等で半導体素子6、
コンデンサ7等を取り付は結線しである。
3 is a hybrid integrated circuit in which a conductor 4 and a resistor 5 are formed on a substrate 3a by printing or other means, and semiconductor elements 6, 3 are formed by soldering or the like.
Capacitor 7 etc. are installed and connected.

混成集積回路3は基板3aを接着剤等で金属製外囲器1
2の底部12bの低い段部に固着しである。
In the hybrid integrated circuit 3, a substrate 3a is attached to a metal envelope 1 with an adhesive or the like.
It is fixed to the low step part of the bottom part 12b of 2.

混成集積回路3はさらに全面又は一部をゲル状弾性樹脂
10で覆い、特に回路素子6及び7の保護をしている。
The hybrid integrated circuit 3 is further entirely or partially covered with a gel-like elastic resin 10 to particularly protect the circuit elements 6 and 7.

混成集積回路3の出力端子8a〜8dも大電力半導体1
の出力端子1a〜1cと同じ側の開口部12aに面する
ように延びている。
The output terminals 8a to 8d of the hybrid integrated circuit 3 are also high power semiconductors 1.
It extends so as to face the opening 12a on the same side as the output terminals 1a to 1c.

次に樹脂封じ大電力半導体素子1の一部又は全部を覆い
、また混成集積回路3を上記弾性樹脂10を介してさら
に覆うように上記開口部12aから注入型樹脂11を上
記外囲器・12内に注入し硬化する。
Next, injection resin 11 is inserted into the envelope/12 through the opening 12a so as to cover part or all of the resin-sealed high-power semiconductor element 1 and further cover the hybrid integrated circuit 3 via the elastic resin 10. Inject it inside and harden.

なお樹脂11は大電力半導体素子1の封じ用樹脂1dを
完全に覆う必要はなく封じ用樹脂1dの頭部が露出して
もよいが、大電力半導体素子1において樹脂封じによる
気密性で最も弱点である樹脂1dと出力端子1a〜IC
との境界部は注入した樹脂11により完全に覆う必要が
ある。
Note that the resin 11 does not need to completely cover the sealing resin 1d of the high-power semiconductor element 1, and the head of the sealing resin 1d may be exposed; The resin 1d and the output terminals 1a to IC
It is necessary to completely cover the boundary with the injected resin 11.

注入した樹脂11が硬化した後大電力半導体素子1の出
力端子1a〜1cと混成集積回路3の出力端子8a〜8
cとをそれぞれプリント板配線9等により結線する。
After the injected resin 11 has hardened, the output terminals 1a to 1c of the high power semiconductor device 1 and the output terminals 8a to 8 of the hybrid integrated circuit 3 are connected.
c are respectively connected by printed board wiring 9 or the like.

また、これらの出力端子1a〜1cと8a〜8cとの結
線は樹脂11の注入前に行な結線部を樹脂11の中に埋
没させてもよい。
Further, the connections between these output terminals 1a to 1c and 8a to 8c may be made before the resin 11 is injected, and the connection portions may be buried in the resin 11.

なお結線されてない出力端子8dは外部回路との接続用
である。
Note that the unconnected output terminal 8d is for connection to an external circuit.

注入用樹脂11は樹脂封じに用いる成型用樹脂に較べて
それが接触する他の材質との間の密着性が優れている。
The injection resin 11 has better adhesion to other materials with which it comes into contact than the molding resin used for resin sealing.

したがって、樹脂1dと出力端子1a〜1cとの密着性
及び気密性が十分でない場合でも、さらに注入用樹脂1
1で覆うことにより気密性の不十分さを補なうことがで
きる。
Therefore, even if the adhesion and airtightness between the resin 1d and the output terminals 1a to 1c are insufficient, the injection resin 1
1 can compensate for insufficient airtightness.

また、注入用樹脂11は混成集積回路3の気密性をも同
様に保持している。
Furthermore, the injection resin 11 also maintains the airtightness of the hybrid integrated circuit 3.

本考案においては、上述のように1個の金属製外囲器1
2の底部12bに樹脂封じ大電力半導体素子・1及び混
成集積回路3を固着し、とくに大電力半導体素子1の出
力端子1a〜1cと樹脂1dとの境界部を覆うと共に混
成集積回路3を覆うように樹脂11を金属製外囲器12
の開口部12aから注入し、開口部12aを完全に封じ
ているので、内部に封じ込まれている大電力半導体素子
1を含む電子回路と外部との気密性に優れ、環境条件の
変化による影響を防止することができる。
In the present invention, as described above, one metal envelope 1
The resin-sealed high-power semiconductor element 1 and the hybrid integrated circuit 3 are fixed to the bottom 12b of the high-power semiconductor element 1, and particularly covers the boundary between the output terminals 1a to 1c of the high-power semiconductor element 1 and the resin 1d, and also covers the hybrid integrated circuit 3. As shown in FIG.
Since the injection is injected through the opening 12a and the opening 12a is completely sealed, it has excellent airtightness between the electronic circuit containing the high-power semiconductor element 1 sealed inside and the outside, and is free from the effects of changes in environmental conditions. can be prevented.

また、大電力半導体素子1及び混威集情回路3はそれぞ
れの接続用端子が金属製外囲器12の開口部12aに面
するように取り付けであるのでそれら相互間の結線が簡
単かつ容易であり小型かつコンパクトな電子回路装置と
することができる。
Furthermore, since the high power semiconductor device 1 and the mixed power collecting circuit 3 are mounted so that their respective connection terminals face the opening 12a of the metal envelope 12, wiring between them is simple and easy. Therefore, it is possible to create a small and compact electronic circuit device.

さらに、大電力半導体素子1が金属製外囲器12に注入
用樹脂を介することなく接するので、大電力半導体素子
1の放熱効果を増大させることができる。
Furthermore, since the high power semiconductor element 1 is in contact with the metal envelope 12 without using the injection resin, the heat dissipation effect of the high power semiconductor element 1 can be increased.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本考案の電子回路装置の縦断面図であり、第
2図は、横断面図である。 1・・・・・・大電力半導体素子、3・・・・・・混成
集積回路、10・・・・・・弾性樹脂、11・・・・・
・注入用樹脂、12・・・・・・金属製外囲器。
FIG. 1 is a longitudinal sectional view of the electronic circuit device of the present invention, and FIG. 2 is a horizontal sectional view. 1... High power semiconductor element, 3... Hybrid integrated circuit, 10... Elastic resin, 11...
- Injection resin, 12...Metal envelope.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 開口部を有する金属製外囲器の底部に、樹脂封じ大電力
半導体及び配線基板に構成した混成集積回路をそれぞれ
の接続用端子番上記開口部に面して取り付け、上記混成
集積回路を弾性樹脂で覆った後、上記樹脂封じ大電力半
導体の少くとも一部及び上記混成集積回路を糟って上記
開口部から樹脂を注入し密封した電子回路装置竺
A hybrid integrated circuit composed of a resin-sealed high-power semiconductor and a wiring board is attached to the bottom of a metal envelope having an opening, with each connection terminal number facing the opening, and the hybrid integrated circuit is sealed with an elastic resin. an electronic circuit device in which at least a part of the resin-sealed high-power semiconductor and the hybrid integrated circuit are sealed, and a resin is injected through the opening and sealed;
JP10036979U 1979-07-20 1979-07-20 electronic circuit equipment Expired JPS6011650Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10036979U JPS6011650Y2 (en) 1979-07-20 1979-07-20 electronic circuit equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10036979U JPS6011650Y2 (en) 1979-07-20 1979-07-20 electronic circuit equipment

Publications (2)

Publication Number Publication Date
JPS5619041U JPS5619041U (en) 1981-02-19
JPS6011650Y2 true JPS6011650Y2 (en) 1985-04-17

Family

ID=29333098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10036979U Expired JPS6011650Y2 (en) 1979-07-20 1979-07-20 electronic circuit equipment

Country Status (1)

Country Link
JP (1) JPS6011650Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62280812A (en) * 1986-05-30 1987-12-05 Sumitomo Electric Ind Ltd Optical branching and joining device

Also Published As

Publication number Publication date
JPS5619041U (en) 1981-02-19

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