JPS60116175A - Ｍｉｓ電界効果半導体装置の製造方法 - Google Patents

Ｍｉｓ電界効果半導体装置の製造方法

Info

Publication number
JPS60116175A
JPS60116175A JP58225060A JP22506083A JPS60116175A JP S60116175 A JPS60116175 A JP S60116175A JP 58225060 A JP58225060 A JP 58225060A JP 22506083 A JP22506083 A JP 22506083A JP S60116175 A JPS60116175 A JP S60116175A
Authority
JP
Japan
Prior art keywords
film
gate electrode
melting point
metal film
point metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58225060A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0580820B2 (cs
Inventor
Hiroshi Tokunaga
博司 徳永
Nobuo Toyokura
豊蔵　信夫
Shinichi Inoue
井上　信市
Fumihiko Yanagawa
柳川　文彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Nippon Telegraph and Telephone Corp filed Critical Fujitsu Ltd
Priority to JP58225060A priority Critical patent/JPS60116175A/ja
Publication of JPS60116175A publication Critical patent/JPS60116175A/ja
Publication of JPH0580820B2 publication Critical patent/JPH0580820B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP58225060A 1983-11-29 1983-11-29 Ｍｉｓ電界効果半導体装置の製造方法 Granted JPS60116175A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58225060A JPS60116175A (ja) 1983-11-29 1983-11-29 Ｍｉｓ電界効果半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58225060A JPS60116175A (ja) 1983-11-29 1983-11-29 Ｍｉｓ電界効果半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60116175A true JPS60116175A (ja) 1985-06-22
JPH0580820B2 JPH0580820B2 (cs) 1993-11-10

Family

ID=16823409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58225060A Granted JPS60116175A (ja) 1983-11-29 1983-11-29 Ｍｉｓ電界効果半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60116175A (cs)

Also Published As

Publication number Publication date
JPH0580820B2 (cs) 1993-11-10

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