JPS60116147A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To form a 2-layer electrode structure without problem of step coverage by selectively etching a conductor film with a resist film on the conductor film as a mask as the first electrode to form a groove, and forming the second electrode in the groove. CONSTITUTION:After forming an insulating film 2 in the prescribed thickness on a semiconductor substrate 1, a conductor film 3 made of aluminum or gold is formed on the film 2. A resist is coated on the film 3, exposed to be developed to form a resist film 4 of the prescribed pattern. With the film 4 as a mask the film 3 is selectively etched as the first electrode, and the film 2 is selectively etched to form a groove 5. Then, the second electrode 6A is formed in the groove 5 by depositing method, and a conductor film 6B is simultaneously formed on the film 4. Further, an interlayer insulating layer 7A is formed on the electrode 6A to bury the groove 5 with an insulating material by sputtering method, and an insulating film 7B is also formed on the film 6A. Then, the films 4, 6B, 7B are removed to obtain a 2-layer electrode structure.

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method for preparing a semiconductor device, and more specifically, to a multilayer wiring (electrode) structure of a semiconductor device.

rh) In a multilayer (two-layer) electrode structure of a semiconductor device, especially a charge-coupled device (CCD), a lower electrode is first formed on an insulating film, and then an interlayer insulator is formed on the insulating film. After forming the film, the upper layer electrode was formed. When forming the interlayer insulating film and the upper layer m-pole in this way, step cover registration at the step is a problem.
If the interlayer insulating film becomes locally thin, or the upper layer electrode also becomes locally thin, the wire may break. Furthermore, when forming a third layer of electrodes, there is a risk that the step cover registration will not work properly.

(C) Object of the Invention An object of the present invention is to form a two-layer electrode structure of a semiconductor device without the trouble of step cover registration.

Another object of the present invention is to easily form a two-layer electrode structure in a self-contained manner, and to form a two-layer electrode structure in a self-contained manner.
The object of the present invention is to propose a method for manufacturing a semiconductor device that can produce a flat surface.

(d) Structure of the Invention The above-mentioned object is to form a conductor film on an insulating film on a semiconductor substrate, to form a mask film with a predetermined number of turns on the conductor film, and to form a mask film with a predetermined number of turns on the conductor film. A mask film with a cross-section is formed, the conductive film not covered by the mask film is etched to form a first electrode, the insulating film is further etched to form a groove, and a second electrode is formed in this groove. Next, an interlayer insulating film is formed.

This is achieved by a method for manufacturing a semiconductor device that includes removing a mask film.

In the manufacturing method according to the present invention, the first electrode (upper electrode)
The second-tit, pole (° upper layer electrode) and glabella insulating film are formed in the groove of the insulating film in a self-aligned manner using the mask film of the patterning stage, and at the same time the mask film is removed, the need for that part is eliminated. The conductive film and unnecessary insulating film during the formation of the second and first upper electrodes are removed in a lift-off manner.

(e) EXAMPLES OF THE INVENTION Hereinafter, the present invention will be described in detail by way of example embodiments of the present invention, with reference to the accompanying drawings.

In order to form a 21i4'r'ri pole of a semiconductor device, as shown in FIG.
After forming the 02 film and the Si3N4 film 2 to a predetermined thickness, the conductor film 3 is formed on the insulating film 2. The material of this conductor film 3 is aluminum, gold, doped polysilicon,
These include high melting point metal silicides. A resist is applied onto this conductive film 3, and exposed and developed to form a resist film 4 in a predetermined pattern.

Using the resist film 4 as a mask, the conductive film 6 is selectively etched with an appropriate etchant to form the gl' quadrupole (upper 1 m electrode), as shown in FIG. 2, and the insulating film 2 is further selected with another etchant. Etch to form bay 5.

The depth of this groove 5 is such that even if a second electrode (described later) is formed, it will not come into contact with the electrode. It is preferable to use active ion etching for etching this insulating film.

Next, as shown in FIG. 6, a conductive material (for example, aluminum, gold,
The second electrode (bottom) is made of high melting point metal silicide, etc.) in the groove 5.
A conductor film 6B is formed on the resist film 4 at the same time.

Furthermore, as shown in FIG. 4, an insulating material (for example, 5L02
, 5i5N4, etc.) is formed on the second fi electrode 6A so as to fill the inside of the groove 5.
An insulating film 713 is also formed over A.

In particular, it is desirable to control the thickness so that the surface 1''Ai of the glabella insulating film 7A is approximately at the same level as the surface of the first electrode 3.

Next, when the resist film 4 is removed with an appropriate solvent,
The conductive film 6B and the insulating film 7B on top of it can also be removed in a lift-off manner, resulting in a two-layer electrode structure as shown in Figure 5 (C). The insulating film 7A can form a substantially flat surface.

(f) Effects of the Invention According to the present invention, the upper layer electrode is formed first and then the lower + sound electrode is formed in a self-aligned manner, so there is no problem with step cover registration. The surface of the resulting 21M1ff extra-thickness is 21M1ff, and the electrodes (wiring) are
This is useful when trying to form a .

[Brief explanation of the drawing]

1 to 5 are schematic cross-sections of a semiconductor device for explaining the types of work performed by the method of manufacturing a semiconductor device according to the present invention. 1...Semiconductor substrate 2...Insulating film 6...Conductor film (first electrode) 4...Resist film 5...Groove 6A...H diode 2 electrode 7A...Interlayer insulation 1 layer Patent Applicant: Fujitsu Limited, Patent Application Agent, Patent Attorney: Akira Aoki, Patent Attorney, Oro Nishidate, Patent Attorney, Yukio Uchida, Patent Attorney, Akira Yamaguchi (Fig.

Claims (1)

[Claims] 1. A conductor film is formed on an insulating film on a semiconductor substrate, a mask film of a predetermined pattern is formed on the conductor film, and the conductor film not covered with the mask film is etching to form a first electrode, further etching the insulating film to form a groove, forming a second electrode in the groove, then forming an interlayer insulating film, and removing the mask film. A method for manufacturing a semiconductor device, characterized in that: 2. The method according to claim 1, wherein the mask film is a resist.