JPS60109919A - 複合半導体装置 - Google Patents
複合半導体装置Info
- Publication number
- JPS60109919A JPS60109919A JP58217988A JP21798883A JPS60109919A JP S60109919 A JPS60109919 A JP S60109919A JP 58217988 A JP58217988 A JP 58217988A JP 21798883 A JP21798883 A JP 21798883A JP S60109919 A JPS60109919 A JP S60109919A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- switching element
- composite semiconductor
- voltage
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 239000002131 composite material Substances 0.000 title claims abstract description 29
- 230000005669 field effect Effects 0.000 claims description 4
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 abstract description 11
- 230000006378 damage Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 101000800116 Homo sapiens Thy-1 membrane glycoprotein Proteins 0.000 description 1
- 101100449816 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GTO1 gene Proteins 0.000 description 1
- 102100033523 Thy-1 membrane glycoprotein Human genes 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08148—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in composite switches
Landscapes
- Electronic Switches (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58217988A JPS60109919A (ja) | 1983-11-18 | 1983-11-18 | 複合半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58217988A JPS60109919A (ja) | 1983-11-18 | 1983-11-18 | 複合半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60109919A true JPS60109919A (ja) | 1985-06-15 |
| JPH0336450B2 JPH0336450B2 (enExample) | 1991-05-31 |
Family
ID=16712856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58217988A Granted JPS60109919A (ja) | 1983-11-18 | 1983-11-18 | 複合半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60109919A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60153222A (ja) * | 1984-01-20 | 1985-08-12 | Miki Puurii Kk | スイツチング回路 |
| FR2611098A1 (fr) * | 1987-02-13 | 1988-08-19 | Telemecanique Electrique | Interrupteur de puissance a montage serie compose d'un thyristor gto et d'un transistor a effet de champ mos |
| FR2613889A1 (fr) * | 1987-04-07 | 1988-10-14 | Telemecanique Electrique | Etage de commande d'un interrupteur statique de puissance a blocage commandable |
| JPH0541757U (ja) * | 1991-11-01 | 1993-06-08 | 株式会社神戸製鋼所 | ２軸混練押出機のダイヘツド |
-
1983
- 1983-11-18 JP JP58217988A patent/JPS60109919A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60153222A (ja) * | 1984-01-20 | 1985-08-12 | Miki Puurii Kk | スイツチング回路 |
| FR2611098A1 (fr) * | 1987-02-13 | 1988-08-19 | Telemecanique Electrique | Interrupteur de puissance a montage serie compose d'un thyristor gto et d'un transistor a effet de champ mos |
| FR2613889A1 (fr) * | 1987-04-07 | 1988-10-14 | Telemecanique Electrique | Etage de commande d'un interrupteur statique de puissance a blocage commandable |
| JPH0541757U (ja) * | 1991-11-01 | 1993-06-08 | 株式会社神戸製鋼所 | ２軸混練押出機のダイヘツド |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0336450B2 (enExample) | 1991-05-31 |
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