JPS60109098A - バイアス電圧決定装置 - Google Patents

バイアス電圧決定装置

Info

Publication number
JPS60109098A
JPS60109098A JP58216241A JP21624183A JPS60109098A JP S60109098 A JPS60109098 A JP S60109098A JP 58216241 A JP58216241 A JP 58216241A JP 21624183 A JP21624183 A JP 21624183A JP S60109098 A JPS60109098 A JP S60109098A
Authority
JP
Japan
Prior art keywords
charge
coupled device
amount
output
bias voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58216241A
Other languages
English (en)
Japanese (ja)
Other versions
JPH041960B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hisanobu Tsukasaki
塚崎 久暢
Shuzo Matsumoto
脩三 松本
Kazuo Kondo
和夫 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58216241A priority Critical patent/JPS60109098A/ja
Priority to US06/672,369 priority patent/US4625322A/en
Publication of JPS60109098A publication Critical patent/JPS60109098A/ja
Publication of JPH041960B2 publication Critical patent/JPH041960B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287Organisation of a multiplicity of shift registers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04Shift registers

Landscapes

  • Filters That Use Time-Delay Elements (AREA)
  • Networks Using Active Elements (AREA)
JP58216241A 1983-11-18 1983-11-18 バイアス電圧決定装置 Granted JPS60109098A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58216241A JPS60109098A (ja) 1983-11-18 1983-11-18 バイアス電圧決定装置
US06/672,369 US4625322A (en) 1983-11-18 1984-11-16 Charge coupled device provided with automatic bias-voltage setting means

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58216241A JPS60109098A (ja) 1983-11-18 1983-11-18 バイアス電圧決定装置

Publications (2)

Publication Number Publication Date
JPS60109098A true JPS60109098A (ja) 1985-06-14
JPH041960B2 JPH041960B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-01-14

Family

ID=16685481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58216241A Granted JPS60109098A (ja) 1983-11-18 1983-11-18 バイアス電圧決定装置

Country Status (1)

Country Link
JP (1) JPS60109098A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Also Published As

Publication number Publication date
JPH041960B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-01-14

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