JPS60103636A - 化合物半導体基板の抵抗率測定方法 - Google Patents

化合物半導体基板の抵抗率測定方法

Info

Publication number
JPS60103636A
JPS60103636A JP58211221A JP21122183A JPS60103636A JP S60103636 A JPS60103636 A JP S60103636A JP 58211221 A JP58211221 A JP 58211221A JP 21122183 A JP21122183 A JP 21122183A JP S60103636 A JPS60103636 A JP S60103636A
Authority
JP
Japan
Prior art keywords
light
substrate
electrode
contact
resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58211221A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0536749B2 (https=
Inventor
Kuninori Kitahara
邦紀 北原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58211221A priority Critical patent/JPS60103636A/ja
Publication of JPS60103636A publication Critical patent/JPS60103636A/ja
Publication of JPH0536749B2 publication Critical patent/JPH0536749B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
JP58211221A 1983-11-10 1983-11-10 化合物半導体基板の抵抗率測定方法 Granted JPS60103636A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58211221A JPS60103636A (ja) 1983-11-10 1983-11-10 化合物半導体基板の抵抗率測定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58211221A JPS60103636A (ja) 1983-11-10 1983-11-10 化合物半導体基板の抵抗率測定方法

Publications (2)

Publication Number Publication Date
JPS60103636A true JPS60103636A (ja) 1985-06-07
JPH0536749B2 JPH0536749B2 (https=) 1993-05-31

Family

ID=16602294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58211221A Granted JPS60103636A (ja) 1983-11-10 1983-11-10 化合物半導体基板の抵抗率測定方法

Country Status (1)

Country Link
JP (1) JPS60103636A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6418234A (en) * 1987-07-14 1989-01-23 Agency Ind Science Techn Semiconductor evaluation device
RU2725105C1 (ru) * 2019-12-27 2020-06-29 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" Способ измерения переходного контактного сопротивления омического контакта

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6418234A (en) * 1987-07-14 1989-01-23 Agency Ind Science Techn Semiconductor evaluation device
RU2725105C1 (ru) * 2019-12-27 2020-06-29 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" Способ измерения переходного контактного сопротивления омического контакта

Also Published As

Publication number Publication date
JPH0536749B2 (https=) 1993-05-31

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