JPS60100674A - 窒化膜形成方法 - Google Patents
窒化膜形成方法Info
- Publication number
- JPS60100674A JPS60100674A JP58207469A JP20746983A JPS60100674A JP S60100674 A JPS60100674 A JP S60100674A JP 58207469 A JP58207469 A JP 58207469A JP 20746983 A JP20746983 A JP 20746983A JP S60100674 A JPS60100674 A JP S60100674A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- film
- tube
- temp
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5062—Borides, Nitrides or Silicides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- H10P14/69433—
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58207469A JPS60100674A (ja) | 1983-11-07 | 1983-11-07 | 窒化膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58207469A JPS60100674A (ja) | 1983-11-07 | 1983-11-07 | 窒化膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60100674A true JPS60100674A (ja) | 1985-06-04 |
| JPS6147906B2 JPS6147906B2 (en:Method) | 1986-10-21 |
Family
ID=16540276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58207469A Granted JPS60100674A (ja) | 1983-11-07 | 1983-11-07 | 窒化膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60100674A (en:Method) |
-
1983
- 1983-11-07 JP JP58207469A patent/JPS60100674A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6147906B2 (en:Method) | 1986-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8415259B2 (en) | Method of depositing dielectric film by modified PEALD method | |
| US5512519A (en) | Method of forming a silicon insulating layer in a semiconductor device | |
| US8173554B2 (en) | Method of depositing dielectric film having Si-N bonds by modified peald method | |
| KR900007686B1 (ko) | 선택적으로 산화된 실리콘 기판상에 에피택셜 실리콘층과 다결정 실리콘층을 동시에 성장시키는 기상 증착방법 | |
| KR970009867B1 (ko) | 반도체 소자의 텅스텐 실리사이드 형성방법 | |
| US5089441A (en) | Low-temperature in-situ dry cleaning process for semiconductor wafers | |
| US4617087A (en) | Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits | |
| JP2776726B2 (ja) | 半導体装置の製造方法 | |
| TW200406503A (en) | Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition | |
| JPH04226025A (ja) | シリコン半導体ウエーハ上にケイ化チタンの導電層を形成する方法 | |
| JPH06132284A (ja) | 半導体装置の保護膜形成方法 | |
| JPH11279773A (ja) | 成膜方法 | |
| US5045346A (en) | Method of depositing fluorinated silicon nitride | |
| JPH05279838A (ja) | 窒化ケイ素層生成プロセス及び半導体デバイス | |
| JP3422345B2 (ja) | タングステン膜の形成方法 | |
| JPH11162875A (ja) | 半導体装置の製造方法 | |
| JPS60100674A (ja) | 窒化膜形成方法 | |
| US20220389580A1 (en) | Non-conformal plasma induced ald gapfill | |
| JPS6262529A (ja) | 窒化シリコン膜の作成方法 | |
| JPH07221048A (ja) | バリアメタル層の形成方法 | |
| JP3243816B2 (ja) | 絶縁膜の形成方法 | |
| JPS61248432A (ja) | 膜形成法 | |
| JP2977150B2 (ja) | 二酸化シリコン絶縁膜の製造方法 | |
| JPS60190564A (ja) | 窒化珪素作製方法 | |
| JP3184042B2 (ja) | 半導体装置の製造方法 |