JPS60100439A - 樹脂封止形半導体装置 - Google Patents

樹脂封止形半導体装置

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Publication number
JPS60100439A
JPS60100439A JP58207721A JP20772183A JPS60100439A JP S60100439 A JPS60100439 A JP S60100439A JP 58207721 A JP58207721 A JP 58207721A JP 20772183 A JP20772183 A JP 20772183A JP S60100439 A JPS60100439 A JP S60100439A
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JP
Japan
Prior art keywords
semiconductor
inner member
thermal stress
semiconductor device
outer member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58207721A
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English (en)
Inventor
Masanori Nakatsuka
中司　正憲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58207721A priority Critical patent/JPS60100439A/ja
Priority to DE19843439111 priority patent/DE3439111A1/de
Priority to GB8427908A priority patent/GB2149573B/en
Publication of JPS60100439A publication Critical patent/JPS60100439A/ja
Priority to US06/946,127 priority patent/US4692788A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は樹脂封止形半導体装置に関し、特に樹脂封止
形半導体装置における半導体ベーシックエレメントの熱
応力緩衝材の改良に係るものである。
〔従来技術〕
従来例によるこの種の樹脂封止形半導体装置として、第
１図に示すように、平板状に形成された１対の熱応力緩
衝材２．３間に半導体ペレツト１をろう付けしてベーシ
ックエレメントとし、この半導体ベーシックエレメント
に外部電極４，５を半田付けすると共に、絶縁基板１を
介して放熱ベース６に取付け、またこの放熱ベース６に
ケース８を配した上で、これらにエポキシ樹脂９などを
充填硬化させて樹脂封止した構成のものがある。
そしてこの構成の樹脂封止形半導体装置は、熱応力緩衝
材をろう付けする半導体ベレツトの接合部にガラスなど
の絶縁物を塗布することで、この接合部を電気的に安定
した状態で保護することができたために、従前からのハ
ーメ゛テンクシールを施した半導体素子とか、トランス
ファモールドで樹脂封止した半導体素子に比較して、コ
ンパクトかつ安価に提供できるものとしてその需要が多
い。
ところでこの従来例による樹脂封止形半導体装置におい
ては、前記半導体ペレット１にガラスパッシベーション
サイリスタを用いた場合には、その両面の熱応力緩衝材
２，３の材料として熱膨張係数の小さいモリブデン、タ
ングステンなどが用いられておル、これによって半導体
ベレツト１を温度サイクル、通電時などでの熱応力によ
る歪みから保護し得るのである。しかし一方、この場合
には、製造時における治具組みの容易さから、ゲート部
のある表面側にろう付けされる緩衝材２の大きさは、同
表面の大きさよシも小さく、また裏面側にろう付けされ
る緩衝材３の大きさは、同裏面の大きさよシも大きくさ
せているのが普通であって、この状態で所定温度に昇温
された水素雰囲気の加熱炉内を通過させてろう付けさせ
ると、このような構成での半導体装置においては、半導
体ペレットに好ましくない影響を生ずることがある。
すなわち、第２図に示すように、ガラスパッシベーショ
ンサイリスタによる半導体ペレット１のゲート部のある
表面側にろう付けされる緩衝材２の大きさが、同表面よ
シも小さいために、こ＼に介在されるろう材１０は同表
面から流れ出すことはないが、裏面側にろう付けされる
緩衝材３の大きさは、同裏面よシも大きいことから、こ
＼に介在されるろう材１１は同裏面で緩衝材３の端部側
にまで広がって、その一部に盛シ上シ部１１ａを生ずる
ことがらシ、このようにして製造された樹脂封止形半導
体装置では、この盛シ上シ部１１ａとベレット端部１ａ
との間に放電を生じたシ、あるいはペレット自体の特性
劣化を招いたシするという不都合があった。
〔発明の概要〕
この発明は従来のとのよ５な欠点に鑑み、熱応力緩衝材
を一体化された内側部材と外側部材とから形成させ、半
導体ベーシックエレメントの主面にろう付けされる内側
部材の大きさを、この主面の大きさよシも小さくシ、か
つ同内側部材の厚さを外側部材の厚さよシも厚くしたも
のである。
〔発明の実施例〕
以下この発明に係る樹脂封止形半導体装置の一実施例に
つき、第３図を参照して詳細に説明す゛る。
この第３図実施例装置において前記第１図および第２図
従来例装置と同一符号は同一または相当部分を示してお
）、この実施例装置では、従来例装置において半導体ペ
レツト１の裏面側にろう付けさせているとζろの、同裏
面よシも大きくした熱応力緩衝材３に換えて、圧入ある
いはかしめ付けなどによシ一体化された内側部材１２ａ
と外側部材１２ｂとから形成させると共に、半導体ペレ
ット１の裏面に直接ろう付けされる内側部材１２ａの大
きさを、この裏面の大きさよシも小さくし、かつ厚さを
外側部材１２ｂの厚さよ多も厚くシ、さらには外側部材
１２ｂの大きさを、同裏面の大きさよシも大きくした熱
応力緩衝材１２を用いるようにしたものである。
しかしてこの実施例装置においても、前記従来例装置と
同様にして、熱応力緩衝材２および１２ａを半導体ペレ
ット１にろう付けさせることによシ半導体ベーシックエ
レメントを製造するが、この場合、半導体ペレット１の
裏面側でのろう材１１の流れ出しは、せいぜい内側部材
１２ａの端面上程度であって、前記した従来例でのよう
に熱応力緩衝材３上に大きく広がったシ、あるいは一部
が盛夛上がったシせず、従って放電を生じ、また特性劣
化を招いたシする欠点を解消できるのである。
ちなみに１発明者の実験結果によれば、２５０〜３５０
℃の水素雰囲気中の加熱炉内でのろう付けを行なった場
合、従来例では７〜ｌＯ％の特性劣化を生じていたが、
実施例ではこれを０．１チ以下に抑制し得ることを確認
できた。
なお、前記実施例においては、ガラスパッシベーション
サイリスタに適用する場合について述べたが、その他に
もガラスパッシベーションダイオードなどのガラスパン
シペーションを施した半導体ペレットについても同様に
適用できることは勿論である。
〔発明の効果〕
以上詳述したようにこの発明によれば、ガラスパッシベ
ーションサイリスタなどのように、ガラスなどによって
絶縁分離された半導体ベレツトの主面に、熱応力緩衝材
をろう付けさせて構成する半導体ベーシックエレメント
において、熱応力緩衝材を一体化された内側部材と外側
部材とから形成させ、少なくとも主面にろう付けされる
内側部材の大きさを、この主面の大きさよシも小さくシ
。
また内側部材の厚さを外側部材の厚さよシも厚くしたの
で、ろう付けの際のろう材の流れ出しを抑制でき、これ
によって半導体ベレットでの放電の低減、特性劣化の防
止を図シ得るもので、装置の製造歩溜シ向上に資すると
ころが大である。
【図面の簡単な説明】
第１図は従来例による半導体装置の概要構成を示す要部
断面図、第２図は同上半導体ベーシックエレメントのろ
う付は部を示す拡大図、第３図はこの発明の一実施例を
適用した半導体ベーシックエレメントのろう付は部を示
す拡大図である。 １・・・・半導体ベレツト、２，３および１２・・・・
熱応力緩衝材、４，５・・・・外部電極。 ６・・・・放熱ベース、９・・・・エポキシ樹脂（封止
樹脂）、１０．１１・・・・ろう材、１２ａ。 １２ｂ・・・・内側、外側部材。 代理人　大　岩　増　雄

Claims (2)

    【特許請求の範囲】
  1. （１）ガンスパンシベーションヲ施シタ半導体ヘレット
    の主面に、熱応力緩衝材をろう付けさせて構成する半導
    体ベーシックエレメントにおいて、前記熱応力緩衝材を
    一体化された内側部材と外側部材とから形成させると共
    に、少なくとも前記主面にろう付けされる内側部材の大
    きさを同主面の大きさよシも小さくシ、かつ内側部材の
    厚さを外側部材の厚さよシも厚くしたことを特徴とする
    樹脂封止形半導体装置。
  2. （２）外側部材の大きさを主面の大きさよルも大きくし
    たことを特徴とする特許請求の範囲第１項記載の樹脂封
    止形半導体装置。
JP58207721A 1983-11-05 1983-11-05 樹脂封止形半導体装置 Pending JPS60100439A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58207721A JPS60100439A (ja) 1983-11-05 1983-11-05 樹脂封止形半導体装置
DE19843439111 DE3439111A1 (de) 1983-11-05 1984-10-25 Halbleiterelement
GB8427908A GB2149573B (en) 1983-11-05 1984-11-05 Semiconductor device
US06/946,127 US4692788A (en) 1983-11-05 1986-12-24 Semiconductor device with solder overflow prevention geometry

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58207721A JPS60100439A (ja) 1983-11-05 1983-11-05 樹脂封止形半導体装置

Publications (1)

Publication Number Publication Date
JPS60100439A true JPS60100439A (ja) 1985-06-04

Family

ID=16544445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58207721A Pending JPS60100439A (ja) 1983-11-05 1983-11-05 樹脂封止形半導体装置

Country Status (4)

Country Link
US (1) US4692788A (ja)
JP (1) JPS60100439A (ja)
DE (1) DE3439111A1 (ja)
GB (1) GB2149573B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8818957D0 (en) * 1988-08-10 1988-09-14 Marconi Electronic Devices Semiconductor devices
DE4344193C2 (de) * 1993-12-23 1996-09-05 Foerster Inst Dr Friedrich Verfahren zur Anbringung einer Schutzschicht und Schutzelement
KR102508945B1 (ko) * 2016-04-19 2023-03-09 현대모비스 주식회사 양방향 반도체 패키지

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512433U (ja) * 1978-07-12 1980-01-26

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1054422B (de) * 1954-06-02 1959-04-09 Guenter Heinrich Dipl Ing Niederschlagselektrode fuer Elektrofilter
US3311798A (en) * 1963-09-27 1967-03-28 Trw Semiconductors Inc Component package
US3399332A (en) * 1965-12-29 1968-08-27 Texas Instruments Inc Heat-dissipating support for semiconductor device
US3434018A (en) * 1966-07-05 1969-03-18 Motorola Inc Heat conductive mounting base for a semiconductor device
GB1297046A (ja) * 1969-08-25 1972-11-22
US3919709A (en) * 1974-11-13 1975-11-11 Gen Electric Metallic plate-semiconductor assembly and method for the manufacture thereof
US4143395A (en) * 1976-10-15 1979-03-06 Tokyo Shibaura Electric Co., Ltd. Stud-type semiconductor device
CH601917A5 (ja) * 1976-10-27 1978-07-14 Bbc Brown Boveri & Cie
DE2704914C2 (de) * 1977-02-05 1982-03-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Anordnung zum Kontaktieren eingehäuster Leistungs-Halbleiterbauelemente
US4248920A (en) * 1978-04-26 1981-02-03 Tokyo Shibaura Denki Kabushiki Kaisha Resin-sealed semiconductor device
JPS56142645A (en) * 1980-04-07 1981-11-07 Hitachi Ltd Semiconductor device
JPS5787139A (en) * 1980-11-19 1982-05-31 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512433U (ja) * 1978-07-12 1980-01-26

Also Published As

Publication number Publication date
GB8427908D0 (en) 1984-12-12
GB2149573B (en) 1987-07-08
DE3439111A1 (de) 1985-05-15
GB2149573A (en) 1985-06-12
US4692788A (en) 1987-09-08

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