JPS5998480A - 多重層光電極および光電池 - Google Patents

多重層光電極および光電池

Info

Publication number
JPS5998480A
JPS5998480A JP58192269A JP19226983A JPS5998480A JP S5998480 A JPS5998480 A JP S5998480A JP 58192269 A JP58192269 A JP 58192269A JP 19226983 A JP19226983 A JP 19226983A JP S5998480 A JPS5998480 A JP S5998480A
Authority
JP
Japan
Prior art keywords
layer
photoelectrode
semiconductor
photoelectrochemical cell
insulating material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58192269A
Other languages
English (en)
Japanese (ja)
Inventor
ア−サ−・トレヴオ−・ハウエ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Standard Oil Co
Original Assignee
Standard Oil Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Oil Co filed Critical Standard Oil Co
Publication of JPS5998480A publication Critical patent/JPS5998480A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/50—Processes
    • C25B1/55—Photoelectrolysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency
    • Y02P20/133—Renewable energy sources, e.g. sunlight

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
JP58192269A 1982-10-15 1983-10-14 多重層光電極および光電池 Pending JPS5998480A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US434603 1982-10-15
US06/434,603 US4521800A (en) 1982-10-15 1982-10-15 Multilayer photoelectrodes utilizing exotic materials
US489815 1983-04-29

Publications (1)

Publication Number Publication Date
JPS5998480A true JPS5998480A (ja) 1984-06-06

Family

ID=23724901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58192269A Pending JPS5998480A (ja) 1982-10-15 1983-10-14 多重層光電極および光電池

Country Status (4)

Country Link
US (1) US4521800A (enExample)
JP (1) JPS5998480A (enExample)
IN (1) IN159307B (enExample)
ZA (1) ZA837251B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61118974A (ja) * 1984-11-15 1986-06-06 Matsushita Electric Ind Co Ltd 光で充電できる二次電池
JPH0815097B2 (ja) * 1990-04-17 1996-02-14 エコール・ポリテクニツク・フエデラール・ドウ・ローザンヌ 光電池
JP2012505962A (ja) * 2008-10-15 2012-03-08 エイチ２ ソーラー ゲーエムベーハー 光電気化学的水分解及び／又は電気生産のためのケイ化物
JP2023002693A (ja) * 2016-12-09 2023-01-10 エムパワー テクノロジー，インク． 高性能太陽電池、アレイ、およびその製造方法

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677158B2 (ja) * 1986-09-03 1994-09-28 株式会社日立製作所 電子写真感光体
US4782377A (en) * 1986-09-30 1988-11-01 Colorado State University Research Foundation Semiconducting metal silicide radiation detectors and source
US4793910A (en) * 1987-05-18 1988-12-27 Gas Research Institute Multielectrode photoelectrochemical cell for unassisted photocatalysis and photosynthesis
JPS6418278A (en) * 1987-07-14 1989-01-23 Sharp Kk Mis structure photosensor
US4863810A (en) * 1987-09-21 1989-09-05 Universal Energy Systems, Inc. Corrosion resistant amorphous metallic coatings
US5270252A (en) * 1988-10-25 1993-12-14 United States Of America As Represented By The Secretary Of The Navy Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide
US5191784A (en) * 1989-12-28 1993-03-09 Siemens Corporate Research, Inc. Opto-electronic gas sensor
US5517054A (en) * 1994-06-07 1996-05-14 National Science Council N-InP Schottky diode structure and a method of making the same
US5726462A (en) * 1996-02-07 1998-03-10 Sandia Corporation Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer
TW386286B (en) 1998-10-26 2000-04-01 Ind Tech Res Inst An ohmic contact of semiconductor and the manufacturing method
EP1006568A1 (en) * 1998-12-02 2000-06-07 STMicroelectronics S.r.l. Enhancing protection of dielectrics from plasma induced damages
US7084423B2 (en) * 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US7589047B1 (en) * 2006-06-08 2009-09-15 Los Alamos National Security, Llc Composite materials and method of making
US9139351B2 (en) 2007-12-11 2015-09-22 Tokitae Llc Temperature-stabilized storage systems with flexible connectors
US9140476B2 (en) 2007-12-11 2015-09-22 Tokitae Llc Temperature-controlled storage systems
US9205969B2 (en) 2007-12-11 2015-12-08 Tokitae Llc Temperature-stabilized storage systems
US9174791B2 (en) 2007-12-11 2015-11-03 Tokitae Llc Temperature-stabilized storage systems
US8215835B2 (en) 2007-12-11 2012-07-10 Tokitae Llc Temperature-stabilized medicinal storage systems
US8485387B2 (en) * 2008-05-13 2013-07-16 Tokitae Llc Storage container including multi-layer insulation composite material having bandgap material
EP2281306A4 (en) * 2008-05-30 2013-05-22 Sarnoff Corp METHOD FOR ELECTRONIC FIXING OF A BACKLACE OF A REAR-LUMINOUS IMAGE PRODUCED ON A UTSOI WAFER
US9372016B2 (en) 2013-05-31 2016-06-21 Tokitae Llc Temperature-stabilized storage systems with regulated cooling
US9447995B2 (en) 2010-02-08 2016-09-20 Tokitac LLC Temperature-stabilized storage systems with integral regulated cooling
US20120156577A1 (en) * 2010-08-20 2012-06-21 Massachusetts Institute Of Technology Methods for forming electrodes for water electrolysis and other electrochemical techniques
US9040983B2 (en) 2010-10-29 2015-05-26 Industrial Technology Research Institute Passivation layer structure of semiconductor device and method for forming the same
TWI424578B (zh) * 2010-10-29 2014-01-21 Ind Tech Res Inst 半導體元件的鈍化層結構及其形成方法
EP2694702A4 (en) * 2011-04-01 2014-10-15 California Inst Of Techn PROTONATE EXCHANGE MEMBRANE ELECTROLYSIS WITH WATER VAPOR AS EXTRACT MATERIAL
EP3377675B1 (en) * 2015-11-18 2023-03-22 Enlighten Innovations Inc. Electrochemical production of hydrogen with dye-sensitized solar cell-based anode
US10920328B2 (en) * 2016-11-14 2021-02-16 King Abdullah University Of Science And Technology Photoelectrochemical cell

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567304B2 (enExample) * 1972-08-28 1981-02-17
US3928242A (en) * 1973-11-19 1975-12-23 Gen Electric Metal oxide varistor with discrete bodies of metallic material therein and method for the manufacture thereof
JPS5820160B2 (ja) * 1978-06-17 1983-04-21 日本碍子株式会社 メタライズ層を備えたセラミツクス体
US4367429A (en) * 1980-11-03 1983-01-04 Hughes Aircraft Company Alloys for liquid metal ion sources
US4426423A (en) * 1981-10-27 1984-01-17 Advanced Technology Inc. Ceramic, cermet or metal composites

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61118974A (ja) * 1984-11-15 1986-06-06 Matsushita Electric Ind Co Ltd 光で充電できる二次電池
JPH0815097B2 (ja) * 1990-04-17 1996-02-14 エコール・ポリテクニツク・フエデラール・ドウ・ローザンヌ 光電池
JP2012505962A (ja) * 2008-10-15 2012-03-08 エイチ２ ソーラー ゲーエムベーハー 光電気化学的水分解及び／又は電気生産のためのケイ化物
JP2023002693A (ja) * 2016-12-09 2023-01-10 エムパワー テクノロジー，インク． 高性能太陽電池、アレイ、およびその製造方法

Also Published As

Publication number Publication date
US4521800A (en) 1985-06-04
ZA837251B (en) 1984-08-29
IN159307B (enExample) 1987-05-02

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