JPS5998318A - Magnetic reproducing thin film head - Google Patents

Magnetic reproducing thin film head

Info

Publication number
JPS5998318A
JPS5998318A JP20823982A JP20823982A JPS5998318A JP S5998318 A JPS5998318 A JP S5998318A JP 20823982 A JP20823982 A JP 20823982A JP 20823982 A JP20823982 A JP 20823982A JP S5998318 A JPS5998318 A JP S5998318A
Authority
JP
Japan
Prior art keywords
thin film
magnetic
reproducing head
zirconium
magnetic reproducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20823982A
Other languages
Japanese (ja)
Inventor
Hiromi Nakajima
中嶋 啓視
Takashi Hatauchi
隆史 畑内
Koichi Mukasa
幸一 武笠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP20823982A priority Critical patent/JPS5998318A/en
Publication of JPS5998318A publication Critical patent/JPS5998318A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)

Abstract

PURPOSE:To improve the reproduction sensitivity by forming magnetic shielding thin films of a ternary amorphous Co alloy contg. Zr and Ta or a quaternary amorphous Co alloy contg. Zr, Ta and Nb on both sides of a magneto-resistance element. CONSTITUTION:The 1st magnetic shielding film 3, a magneto-resistance (MR) element 4, electrically conductive thin films 5, 6, and the 2nd magnetic shielding film 7 are successively laminated on an insulating film 2 on a nonmagnetic substrate 1 to obtain a magnetic head. The films 3, 7 are thin films of an amorphous Co alloy contg. about 5-20wt% in total of >= about 2.5wt% Zr and Ta or about 5-20wt% in total of >= about 2.5wt% Zr, Ta and Nb and having high magnetic permeability and high saturation magnetic flux density. The films 3, 7 are formed by sputtering or vapor deposition, and it is preferable to reduce the anisotropic magnetic field by carrying out heat treatment in a rotating magnetic field. Thus, the reproduction efficiency is improved.

Description

【発明の詳細な説明】 本発明は薄膜磁気ヘッドに係り、特にそれの再生ヘッド
におけるイ丑気シールドN戸の材質に関するものである
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film magnetic head, and more particularly to the material of an air shield in a reproducing head thereof.

曹膜磁気再生ヘッドは、非磁性相からなる基板と、その
上に順次設けられた第1の磁気、シールド薄膜、磁気抵
抗効果素子(以下、MR素子と略記する)、第2の磁気
シールド薄膜などから構成されている。この薄11争磁
気1再生ヘッドは薄膜呻気紀h−ヘッドと対になって薄
膜ヘッドを構成している。
The carbon dioxide magnetic reproducing head includes a substrate made of a non-magnetic phase, a first magnetic shield thin film, a magnetoresistive element (hereinafter abbreviated as MR element), and a second magnetic shield thin film, which are sequentially provided on the substrate. It is composed of etc. This thin 11-magnetic 1 reproducing head is paired with a thin film H-head to form a thin film head.

この薄膜磁気再生ヘッドの磁気シールド薄膜f膜として
はその機能を十分に発揮するため、透磁率ならびた飽和
磁束密度がともに高いことが要求される。従来、この磁
気シールド薄膜として、鉄−ニラナル合金からなる二元
系パーマロイや、その二元系パーマロイに例えはクロム
、モリブデン、銅などの第三元素を添加した多元系パー
マロイが用いられている。ところがパーマロイでは一般
に透磁率ならびに飽和磁束密度を十分に高くすることが
難しく、十分なシールド効果が得られなかった。
In order to fully exhibit its function as a magnetic shielding thin film F film of this thin film magnetic reproducing head, it is required that both magnetic permeability and saturation magnetic flux density are high. Conventionally, as this magnetic shielding thin film, a binary permalloy made of an iron-niranal alloy, or a multi-component permalloy in which a third element such as chromium, molybdenum, or copper is added to the binary permalloy has been used. However, with permalloy, it is generally difficult to make the magnetic permeability and saturation magnetic flux density sufficiently high, and a sufficient shielding effect cannot be obtained.

本発明者らは、スパッタリングなどによって得られるア
モルファス合金薄膜について種々研究した結果、コバル
) (Co)を主成分とし、少量のジルコニウム(Zr
)とタンタル(TcL)を添加したCo−zr−TcL
の3成分系アモルファス合金、ならびにコバル)(Co
)を主成分とし、少量のジルコニウム(Zr)とタンタ
ル(Ta )とニオブ(Nb)を添加したCo−zr 
−TG−Nbの4成分系アモルファス合金が、それぞれ
薄膜磁気再生ヘッドのシールド材として優れた特性を有
していることを見出した。
As a result of various studies on amorphous alloy thin films obtained by sputtering etc., the present inventors found that the main component is cobal (Co) and a small amount of zirconium (Zr).
) and Co-zr-TcL added with tantalum (TcL)
ternary amorphous alloys, as well as cobal (Co)
), with small amounts of zirconium (Zr), tantalum (Ta), and niobium (Nb) added.
It has been found that four-component amorphous alloys of -TG-Nb have excellent properties as shielding materials for thin-film magnetic reproducing heads.

D初、Co −Zr −’I’a系アモルファス合金に
ついて説明する。
For the first time, the Co-Zr-'I'a-based amorphous alloy will be explained.

基板に結晶化ガラスを用い、コバルトディスク(直径4
インチ、厚さ5市)上にジルコニウムのペレットとタン
タルのペレット (いスレのペレットも縦、横10劇、
厚さ1酎)を中心より放射状に交互に配積し、ターゲッ
トJ二のペレットの数をル11(整することにより合金
組成が変えられるようにする。ぞしてアルゴンによる置
換前の真空度がlXl0  TOrr以下の高真空にし
、アルゴンの雰囲気中で、高周波?!1.力2. OW
 / cn?でスパッタリングを行ない、井板上にコバ
ルトを主成分とするC0−zr−’rαの3成分系のア
モルファス合金薄膜を作成する。このようにして作成さ
れた各柚組成の合金試料が後述の各特性試験に使用され
る。
Using crystallized glass as the substrate, a cobalt disk (diameter 4
zirconium pellets and tantalum pellets (thickness: 1 inch, 5 inches thick) on top of zirconium pellets and tantalum pellets.
The alloy composition can be changed by arranging the number of pellets on the target J to 11 (thickness 1) in a radial direction from the center. In a high vacuum of less than lXl0 TOrr, in an argon atmosphere, high frequency?! 1. Force 2. OW
/cn? Sputtering is performed to form a three-component amorphous alloy thin film of C0-zr-'rα, the main component of which is cobalt, on the plate. The alloy samples of each yuzu composition prepared in this manner are used for each characteristic test described below.

第1図は、合金中のZr自有率か常に6重量−になるよ
うにして、TGの含有率を柚々変えた場合の保磁力(H
c)の変化を測定した結果を示す特性図である。従って
この図においてTGの含有率がOホ州チの場合は、Co
 94重9% −Zr 6 aij!%の2成分系合金
となる。この合金も前述とはぽ同様の条件で作成される
Figure 1 shows the coercive force (H
It is a characteristic diagram which shows the result of measuring the change of c). Therefore, in this figure, when the TG content is Oho state chi, Co
94 weight 9% -Zr 6 aij! % binary alloy. This alloy is also produced under similar conditions to those described above.

この図から明らかなように、COにZ’rを添加した2
成分系合金ではまだHeが高いが、これにさらKTαを
小屋添加することにより、すなわちCo −Zr−Ta
、の3成分系合金になるとHcは急に低下する。特にT
(L含有率が約2重量%以上、好ましくは約5重it−
以上になるとHeを0.1(Oe)付近まで下げること
ができる。TGの含有率が5重量%以上になるとHcの
値はほとんど一定であり、含有率が17爪Mチを越える
と3成分系合金の飽和磁束密度Bsが低くなるため好ま
しくない。従って合金中におけるTGの含有率を約2〜
17重h1チ、好ましくは約5〜15重量−の範囲に規
制する方が良い。このような傾向は、Zrの含有*が多
少変化しても同様であることが実験で確認されている。
As is clear from this figure, 2 with Z'r added to CO
Although He is still high in the component alloy, by adding KTα to it, that is, Co-Zr-Ta
When it comes to a ternary alloy of , Hc suddenly decreases. Especially T
(L content is about 2% by weight or more, preferably about 5% by weight)
When it is above, He can be lowered to around 0.1 (Oe). When the content of TG is 5% by weight or more, the value of Hc is almost constant, and when the content exceeds 17 mm, the saturation magnetic flux density Bs of the ternary alloy becomes low, which is not preferable. Therefore, the content of TG in the alloy should be about 2~
It is better to limit the weight to 17 weights, preferably within a range of about 5 to 15 weights. It has been confirmed through experiments that this tendency remains the same even if the Zr content* changes somewhat.

このようにco−Zr−Taの3成分系合金にすること
により1、Co単独あるい1−JCo −Zrの2成分
系合金よりもHcを極端に低く抑えることができる。ま
たZrとTGの添加は透磁率μにも大きく影響する。
In this way, by using a ternary alloy of co-Zr-Ta, Hc can be kept extremely low compared to a binary alloy of 1, Co alone or 1-JCo-Zr. Furthermore, the addition of Zr and TG greatly affects the magnetic permeability μ.

鉛2図はZrとTGのトータル含有率とμとの関係を測
定した結果を示す特性図で、ZrとTGとの重搦比が常
にZr:T(I−6,5: 10.1になるよう調整さ
れている。この図から明らかなように、Co中にZrと
Taを添加することによりμが急激に高くなり、宥にz
rとTcLのトータル含有率が約5〜201狂年嘱のl
!j+、囲ではμを4000以上にすることができ、そ
の中でも特にZrとTaのトータル含有率が約8〜17
重級チの範囲のものはμが一部しており、品質の安定し
た高透磁率のアモルファス合金が得られる。第2図に示
すような特性は、Z’rとTCLの重量比を多少変化し
ても同様の傾向を示す。
The lead 2 diagram is a characteristic diagram showing the results of measuring the relationship between the total content of Zr and TG and μ. As is clear from this figure, by adding Zr and Ta to Co, μ increases rapidly, and z
The total content of r and TcL is about 5 to 201 l.
! j+, μ can be made more than 4000, especially when the total content of Zr and Ta is about 8 to 17
Those in the heavy grade range have a part of μ, and an amorphous alloy with stable quality and high magnetic permeability can be obtained. The characteristics shown in FIG. 2 show the same tendency even if the weight ratio of Z'r and TCL is slightly changed.

第3図はZrとTaのトータル含有率とBsとの関係を
測定した結果を示す特性図で、第2図qノ場合と同様に
ZrとTaとの重量比が常にzr:’rα−6,5: 
10.1になるようにW、i&されている。この図から
明らかなように、zrとTaのトータル含有率が茜くな
ろにiI〔つてBsは低くなる傾向にあり、特にzrと
TCLのトータル含有率が約20屯量−を越えるとB 
S G;J、 10 K G以下になってしまう。
Figure 3 is a characteristic diagram showing the results of measuring the relationship between the total content of Zr and Ta and Bs, and as in the case of Figure 2 q, the weight ratio of Zr and Ta is always zr:'rα-6 ,5:
W, i& is set so that it becomes 10.1. As is clear from this figure, as the total content of zr and Ta becomes redder, Bs tends to decrease, especially when the total content of zr and TCL exceeds about 20 tons.
SG;J, it becomes less than 10KG.

この特性は、ZrとTcLの重量比が多少変化しても同
様の傾向を示す。
This characteristic shows a similar tendency even if the weight ratio of Zr and TcL changes somewhat.

この第2図および8)3図の特性曲線から明らかなよう
に、μならびにBSの島いアモルファス合金を得るため
には、Zrとrαのトータル含有率を約5〜20重量−
の範囲に規制するとよい。
As is clear from the characteristic curves in Figures 2 and 8), in order to obtain an amorphous alloy with small islands of μ and BS, the total content of Zr and rα must be adjusted to about 5 to 20% by weight.
It is best to regulate it within the range of .

このようにZrとTaのトータル含有率を約5〜20重
量%の範囲に規制しても、その中のZr含有率が低く過
ぎるとHcの高いアモルファス合金となる。第4図は、
合金中のTa含有率が常にlO0重M%になるようにし
て、zrの含有率を種々変えた場合のHcの変化を測定
した結果を示す特性図である。従ってこの図においてZ
rの含有率が0重量%の場合は、0090重31%−T
a 10ijf%の2成分系合金となる。この合金も前
述とほぼ同様の条件で作成される。
Even if the total content of Zr and Ta is regulated in the range of approximately 5 to 20% by weight, if the Zr content is too low, an amorphous alloy with high Hc will result. Figure 4 shows
FIG. 3 is a characteristic diagram showing the results of measuring changes in Hc when varying the Zr content while keeping the Ta content in the alloy always at 100% by weight. Therefore, in this diagram, Z
When the content of r is 0% by weight, 0090wt 31%-T
It becomes a binary alloy with a content of 10ijf%. This alloy is also produced under substantially the same conditions as described above.

この図から明らかなように、C0KT(Zを添加した2
成分系合金ならびにZrの含有率が2重量%までのCo
−Zr−Taの3成分系合金は、Hcが冒い。ところが
Zrの含有率が約25重量%を越えるとHcは急激に低
下し、約5重量−以上になるとHeはへ1  (Oe)
以下にすることができる。このようにCo−Zrr−T
aの3成分系アモルファス合金において、zrを約25
重量−以上含有することにより、Heを低く抑えること
ができるが、zrの含有率が余り高くなってもHcを低
く抑える効果は同じであり、かえってBsが低くなるた
め好ましくない。従ってHeを低く抑えしかもBsを高
く維持するためにはZrの含有率を約2.5〜6.6重
量%、好ましくは約5〜6.5重M%の範囲に規制する
方がよい。
As is clear from this figure, C0KT (Z-doped 2
component alloys and Co with a Zr content of up to 2% by weight
-Zr-Ta ternary alloy is affected by Hc. However, when the Zr content exceeds about 25% by weight, Hc decreases rapidly, and when the Zr content exceeds about 5% by weight, He decreases to 1 (Oe).
It can be: In this way, Co-Zrr-T
In the ternary amorphous alloy of a, zr is approximately 25
By containing more than -weight, He can be kept low, but even if the content of zr becomes too high, the effect of keeping Hc low will be the same, but Bs will become lower on the contrary, which is not preferable. Therefore, in order to keep He low and Bs high, it is better to limit the Zr content to about 2.5 to 6.6% by weight, preferably about 5 to 6.5% by weight.

本発明に係るCo −z、−TcLの系のアモルファス
合金において、TtLの一部なNbと置換した、c。
In the Co -z, -TcL based amorphous alloy according to the present invention, c is substituted with Nb which is a part of TtL.

−Zr−Ta−Nbの4成分系アモルファス合金もif
 述したCo−Zr−Taのa+ffi分系アモルファ
ス合金と同様に優れた磁気特性を有している。
-Zr-Ta-Nb four-component amorphous alloy if
It has excellent magnetic properties similar to the Co-Zr-Ta a+ffi amorphous alloy described above.

第5図は、Coを844重M%Z「を611含有し、残
部の10重量−がrαとNbがらなり、Taに対するN
bの廿゛イ換割含を種々変えた場合、すなわちCaB6
− z+r6− (Ta10G−xNbx)zaにおい
てX値を種々変えた場合の磁気特性を示す図である。
Figure 5 shows a graph containing 844% Co by weight and 611% by weight, the remaining 10% by weight consisting of rα and Nb, and N relative to Ta.
When the conversion ratio of b is varied, that is, CaB6
-z+r6- (Ta10G-xNbx)za is a diagram showing magnetic properties when the X value is variously changed.

この図において曲線AはHc特性、曲線Bはμ特性をそ
れぞれ示す。この図がら明らかなように、c。
In this figure, curve A shows the Hc characteristic, and curve B shows the μ characteristic. As is clear from this figure, c.

−Zr−Ta−Nbの4成分系アモルファス合金モCo
 −Zr(−Tczの3成分系アモルファス合金とほぼ
同様の優れた磁気特性を有し、むしろHc特性(曲@A
)ならびにBs特性(曲11c>は若干ではあるがCo
−Zr−Ta系アモルファス合金よりも良好である。こ
のような傾向41、coならびにZrの含有率が多少変
化しても同様である。
-Zr-Ta-Nb four-component amorphous alloy MoCo
-Zr(-Tcz) has almost the same excellent magnetic properties as the ternary amorphous alloy, but rather has Hc properties (song @A
) and Bs characteristics (song 11c> is slightly Co
-Better than Zr-Ta based amorphous alloy. This tendency 41 remains the same even if the contents of co and Zr change somewhat.

このCo−Zr−Ta−Nbの4成分系アモルファス合
金においても、zr−’rα−Nbのトータル含有率を
約5〜20重量−の範囲に規制することにより、μおよ
びBsの高いアモルファス合金を得ることができる。ま
た、この4成分系アモルファス合金においてもZrの含
有率を約2..5重114以上に規制することにより、
Hcを極端に低く抑えることができる。
Even in this Co-Zr-Ta-Nb four-component amorphous alloy, by regulating the total content of zr-'rα-Nb to a range of about 5 to 20% by weight, an amorphous alloy with high μ and Bs can be made. Obtainable. Also, in this four-component amorphous alloy, the Zr content is about 2. .. By regulating 5-fold 114 or more,
Hc can be kept extremely low.

本発明に係るCo−Zr−Ta系およびCo −Zr−
Ta−Nb系の合金は、スパッタリングや蒸着によって
形成された合金薄膜の異方性磁界Hkは15〜20(O
e)と大きい。この異方性磁界を小さくする手段につい
て種々検討した結果、スパッタリングや蒸着などによっ
て形成したアモルファス合金薄膜を回転磁界中で熱処理
する手段が有効であることを見出した。この処理で、温
度は300〜400 (℃)、回転速度は10−20 
(r、p、m。
Co-Zr-Ta system and Co-Zr- according to the present invention
For Ta-Nb alloys, the anisotropic magnetic field Hk of the alloy thin film formed by sputtering or vapor deposition is 15 to 20 (O
e) and large. As a result of various studies on ways to reduce this anisotropic magnetic field, we found that it is effective to heat treat an amorphous alloy thin film formed by sputtering, vapor deposition, etc. in a rotating magnetic field. In this process, the temperature is 300-400 (℃) and the rotation speed is 10-20℃.
(r, p, m.

)、磁界の強さはtoo(Oe)以上、処理時間は3時
間以上が好ましい。例えば温度を350(℃)、回転速
度を1 o (r、p、m、 )、磁界の強さを100
(Oe)、処理時間を3時間に股部して1アモルファス
合金薄膜を処理すれば、異方性磁界Hkを約4(Oe)
まで下げることができる。
), the magnetic field strength is preferably too (Oe) or more, and the processing time is preferably 3 hours or more. For example, the temperature is 350 (℃), the rotation speed is 1 o (r, p, m, ), and the magnetic field strength is 100
(Oe), and if one amorphous alloy thin film is processed with a processing time of 3 hours, the anisotropic magnetic field Hk will be approximately 4 (Oe).
It can be lowered to

第6図は、本発明の実施例に係る薄膜磁気再生ヘッドの
要部分解斜視図である。lは非磁性材からなる基板、2
は絶縁被膜、3は第1の8気シールド薄膜、4はM R
素子、5および6は導電薄膜)7は第2の磁気シールド
薄膜である。
FIG. 6 is an exploded perspective view of essential parts of a thin film magnetic reproducing head according to an embodiment of the present invention. l is a substrate made of non-magnetic material, 2
is an insulating coating, 3 is the first 8-air shield thin film, 4 is M R
(5 and 6 are conductive thin films) 7 is a second magnetic shield thin film.

前記第1の磁気シールド薄膜3および第2の磁気シール
ド薄膜7の一例として、CO含有率か83.4重用チ、
zr含有率が6.5重量%、Ta含有率が10.1重量
%で、zrとTaのトータル含有率が16.6利OのC
o−Zr−Tgの3成分糸アモルファス合金薄膜からな
っている。これら磁気シールド薄膜3,7はそれぞれス
パッタリングで形成されたのち、前述の条件下において
回転磁界中で熱処理される。
As an example of the first magnetic shield thin film 3 and the second magnetic shield thin film 7, the CO content is 83.4,
C with a Zr content of 6.5% by weight, a Ta content of 10.1% by weight, and a total content of Zr and Ta of 16.6% by weight.
It consists of a three-component yarn amorphous alloy thin film of o-Zr-Tg. These magnetic shielding thin films 3 and 7 are each formed by sputtering, and then heat treated in a rotating magnetic field under the aforementioned conditions.

磁気シールド薄膜31.7の他の側は、CO含鳴率が8
5重量%、Zr、Ta、 Nbの含有率がそれぞれ5重
敞チで、結局Zr#Ta、Nbのトータル含有率が15
重量%のCo−zrr−’rα−Nbの4成分系アモル
ファス合金f!膜からなっている。これら磁気シールド
薄膜3,7も同様にそれぞれスパッタリングで形成され
、その後前記条件下において回転磁界中で熱処理される
The other side of the magnetic shield thin film 31.7 has a CO inclusion rate of 8.
5% by weight, and the content of Zr, Ta, and Nb was 5% each, and the total content of Zr#Ta and Nb was 15%.
Quaternary amorphous alloy of Co-zrr-'rα-Nb in wt% f! It consists of a membrane. These magnetic shield thin films 3 and 7 are similarly formed by sputtering, and then heat treated in a rotating magnetic field under the above conditions.

本発明は前述のように薄膜磁気再生ヘッドの磁気シール
ド薄膜を、コバルトを主成分とし、それにジルコニウム
とタンタルを少量添加した3成分系アモルファス合金、
ならびにコバルトを主成分とし、それにジルコニウムと
タンタルとニオブを少量添加した4成分系アモルファス
合金で構成したことを特徴とするものである。これらの
アモルファス合金は、透磁率ならびに飽和磁束密度が高
いから、磁気シールド効果を十分に発揮することができ
、再生感1すの向上が図れ、また磁気1シールド薄膜の
膜厚をさらに薄くすることも可能である。
As mentioned above, the present invention provides a magnetic shield thin film for a thin film magnetic reproducing head made of a three-component amorphous alloy containing cobalt as a main component and small amounts of zirconium and tantalum added thereto.
It is also characterized in that it is composed of a four-component amorphous alloy containing cobalt as a main component and to which small amounts of zirconium, tantalum, and niobium are added. These amorphous alloys have high magnetic permeability and saturation magnetic flux density, so they can fully exhibit the magnetic shielding effect, improve the playback feeling, and make it possible to further reduce the thickness of the magnetic shield thin film. is also possible.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はニオブの含有率と保磁力との関係を示す特性図
、第2図はジルコニウムとニオブのトータル含有率と透
磁率との関係を示す特性図、第3図はジルコニウムとニ
オブのトータル含有率と飽和磁束密度との関係を示す特
性図、第4図はジルコニウムと保磁力との関係を示す特
性図、第5図はタンタルに対するニオブの置換量を抽々
変えた場合の磁気、特性図、り)6図は本発明の実施例
に係る薄膜磁気再生ヘッドの要部分解斜視図である。 1・・・・・・基板、3・・・・・・第1の磁気シール
ド薄膜、4・・・・・・M R素子、7・・・・・・第
2の磁気シールドt4・°膜。 gISl  図 0      5       lO1520To (
W t %) 第2 図 Q       5      10     15 
    20     25Zr+To(wt%) wS3 図 0       5       lOI5     
 20Zr+To(w 第4図 0        5        70     
  15       20Zr(wt%〕 第5図 乃6図
Figure 1 is a characteristic diagram showing the relationship between niobium content and coercive force, Figure 2 is a characteristic diagram showing the relationship between total zirconium and niobium content and magnetic permeability, and Figure 3 is a characteristic diagram showing the relationship between zirconium and niobium total content and magnetic permeability. Figure 4 is a characteristic diagram showing the relationship between content and saturation magnetic flux density. Figure 4 is a characteristic diagram showing the relationship between zirconium and coercive force. Figure 5 is the magnetic characteristics when the amount of niobium substituted for tantalum is varied. Figures 6 and 6 are exploded perspective views of essential parts of a thin film magnetic reproducing head according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Substrate, 3... First magnetic shielding thin film, 4... MR element, 7... Second magnetic shielding t4° film . gISl Figure 0 5 lO1520To (
W t %) Figure 2 Q 5 10 15
20 25Zr+To (wt%) wS3 Figure 0 5 lOI5
20Zr+To(w Fig. 4 0 5 70
15 20Zr (wt%) Figures 5 to 6

Claims (1)

【特許請求の範囲】 (1)  磁気抵抗効果素子の両側に磁気シールド薄膜
をそれぞれ形成してなる薄膜磁気再生ヘッドにおいて、
前記磁気シールド薄膜が、コバルトをJ1分とし、それ
に少量のジルコニウムとタンタルとを添加した3成分糸
のアモルファス合金で構成されていることを特徴とする
薄膜磁気再生ヘッド。 (2)  特許請求の範囲第(j、1項記載において、
前記ジルコニウムとタンタルのトータル含有率が約5〜
20重量%のNtL[に規制されていることを特徴とす
る薄膜磁気再生ヘッドっ (8ン  特fl:請求の範1Ull第(1)項および
第(乃項記載において、前記ジルコニウムの含有率が約
2.5 fJj % S以上に規制されていることを特
徴とする薄膜磁気再生ヘッド。 (4) 狛許請求の範囲第(1)項記載において、前記
磁気シールド薄膜として形成されたコバルトージルフニ
ウムータンタルの3成分系アモルファス合金薄膜が回転
磁界中で熱処理されることを特徴とする薄膜磁気再生ヘ
ッド。 (6)磁気抵抗効果素子の両側に磁気シールド薄膜をそ
れぞれ形成してなる薄明磁気再生ヘッドにおいて、前記
磁気シールド薄膜が、コバルトを主成分とし、それに少
量のジルコニウムとタンタルとニオブとを添加した4成
分系のアモルファス合金で構成されていることケ特徴と
する薄IIIム磁気再生ヘッド。  ・ (θ) 特許請求の範囲第(6)項記載において、前記
ジルコニウムとタンタルとニオブのトータル含有率が約
5〜20重Ijkチの範囲に規制されていることを特徴
とする薄膜磁気再生ヘッド。 (7)  特許1iM求の範囲第(5)項および第(6
)項記載において、前記ジルコニウムの含有率が約25
重量−以上に規制されていることを特徴とする薄膜磁気
再生ヘッド。 (8)  特許請求の範囲第(5)項記載において、前
記磁気シールド薄膜として形成されたコバルトージルコ
ニウム−タンタル−ニオブの4成分系アモルファス合金
薄膜が回転磁界中で熱処理されることを特徴とするN脱
磁気再生ヘッド。
[Claims] (1) A thin film magnetic reproducing head in which magnetic shield thin films are formed on both sides of a magnetoresistive element,
A thin film magnetic reproducing head characterized in that the magnetic shield thin film is composed of an amorphous alloy of three-component threads containing J1 cobalt and to which small amounts of zirconium and tantalum are added. (2) In claim No. (j, paragraph 1),
The total content of zirconium and tantalum is about 5 to
A thin film magnetic reproducing head (8) characterized in that the content of zirconium is limited to 20% by weight of NtL. A thin film magnetic reproducing head characterized in that the cobalt magnetic reproducing head is regulated to about 2.5 fJj % S or more. A thin-film magnetic reproducing head characterized in that a three-component amorphous alloy thin film of Fn-tantalum is heat-treated in a rotating magnetic field. (6) Twilight magnetic reproducing head in which magnetic shielding thin films are formed on both sides of a magnetoresistive element. A thin III-layer magnetic reproducing head characterized in that the magnetic shield thin film is composed of a four-component amorphous alloy containing cobalt as a main component and to which small amounts of zirconium, tantalum, and niobium are added. (θ) A thin film magnetic reproducing head according to claim (6), characterized in that the total content of zirconium, tantalum, and niobium is regulated to a range of approximately 5 to 20 times Ijk. (7) Scope of Patent 1iM, Paragraphs (5) and (6)
), the zirconium content is about 25
A thin film magnetic reproducing head characterized in that its weight is restricted to - or more. (8) Claim (5) is characterized in that the four-component amorphous alloy thin film of cobalt-zirconium-tantalum-niobium formed as the magnetic shielding thin film is heat-treated in a rotating magnetic field. N demagnetized playback head.
JP20823982A 1982-11-27 1982-11-27 Magnetic reproducing thin film head Pending JPS5998318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20823982A JPS5998318A (en) 1982-11-27 1982-11-27 Magnetic reproducing thin film head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20823982A JPS5998318A (en) 1982-11-27 1982-11-27 Magnetic reproducing thin film head

Publications (1)

Publication Number Publication Date
JPS5998318A true JPS5998318A (en) 1984-06-06

Family

ID=16552955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20823982A Pending JPS5998318A (en) 1982-11-27 1982-11-27 Magnetic reproducing thin film head

Country Status (1)

Country Link
JP (1) JPS5998318A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0262925A2 (en) * 1986-09-29 1988-04-06 Hewlett-Packard Company Transducer shield
US5473492A (en) * 1993-03-03 1995-12-05 Tdk Corporation Magnetic head including a reproducing head utilizing a magnetoresistance effect and having a magnetic shielding film containing nitrogen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0262925A2 (en) * 1986-09-29 1988-04-06 Hewlett-Packard Company Transducer shield
US5473492A (en) * 1993-03-03 1995-12-05 Tdk Corporation Magnetic head including a reproducing head utilizing a magnetoresistance effect and having a magnetic shielding film containing nitrogen

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