JPS6022727A - Thin film magnetic playback head - Google Patents
Thin film magnetic playback headInfo
- Publication number
- JPS6022727A JPS6022727A JP12872483A JP12872483A JPS6022727A JP S6022727 A JPS6022727 A JP S6022727A JP 12872483 A JP12872483 A JP 12872483A JP 12872483 A JP12872483 A JP 12872483A JP S6022727 A JPS6022727 A JP S6022727A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic
- thin
- alloy
- content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は薄膜磁気再生ヘッドに係り、特にそ九の再生ヘ
ッドにおける磁気シールド薄膜の材質に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film magnetic reproducing head, and more particularly to the material of the magnetic shielding thin film in the reproducing head.
簿膜磁気再生ヘッドは、非磁性材からなる基板lど、そ
の上の順次設けられた第1の磁気シールド薄膜、磁気抵
抗効果素子(以下、M R素子と略記する)、第2の磁
気シールド薄膜などから構成されている。この薄膜磁気
再生ヘッドは薄膜磁気記録ヘッドと対になって薄膜ヘッ
ドをイn成し1例えば電子計算機の記憶装置などに用い
られる。The film magnetic reproducing head includes a substrate made of a non-magnetic material, a first magnetic shield thin film, a magnetoresistive element (hereinafter abbreviated as MR element), and a second magnetic shield, which are sequentially provided on the substrate. It is made up of thin films. This thin film magnetic reproducing head is paired with a thin film magnetic recording head to form an in-line thin film head and is used, for example, in a storage device of an electronic computer.
この薄膜磁気再生ヘッドの磁気シールド薄膜としてはそ
の機能を十分に発揮するため、透磁率ならびに飽和磁束
密度がともに高いことが要求される。従来、この磁気シ
ールド薄膜として、鉄−ニッケル合金からなる二元系パ
ーマロイや、それに例えばクロム、モリブデン、銅など
の第3元素を添加した多元系パーマロイが用いられてい
る。ところがパーマロイでは一般に透磁率ならびに飽和
磁束密度を十分に高くすることが難しく、十分なシール
ド効果が得られなかった。In order for the magnetic shield thin film of this thin film magnetic reproducing head to fully exhibit its function, it is required to have high magnetic permeability and high saturation magnetic flux density. Conventionally, binary permalloy made of an iron-nickel alloy and multi-component permalloy to which a third element such as chromium, molybdenum, or copper is added are used as magnetic shielding thin films. However, with permalloy, it is generally difficult to make the magnetic permeability and saturation magnetic flux density sufficiently high, and a sufficient shielding effect cannot be obtained.
本発明者らは、スパッタリングなどによって得られるア
モルファス合金薄膜についで種々研究した結果、コバル
ト(Co )を主成分とし、少量のハフニウム(Hf)
とタンタル(Ta)を添加しりCo−Hf −T aの
3成分系のアモルファス合金からな己薄膜が、薄膜磁気
再生ヘッドの磁気シールド薄膜とし−C非常に好適であ
ることを見出した。The present inventors have conducted various studies on amorphous alloy thin films obtained by sputtering, etc., and found that the main component is cobalt (Co) and a small amount of hafnium (Hf).
It has been found that a thin film made of a three-component amorphous alloy of Co-Hf-Ta and tantalum (Ta) is very suitable as a magnetic shield thin film for a thin-film magnetic reproducing head.
基板に結晶化ガラスを用い、コバルトディスク(直径]
、01.6fflC++厚さ5mm)上にハフニウムの
ペレットとタンタルのベレット(いずれのペレッ(−も
縦、イja 10 n+m、 f5.さL++m)i中
心より放射状に交互に配置し、ターゲット上のベレン1
−の数を調整することにより合金組成が変えられるよう
にする。Using crystallized glass for the substrate, cobalt disk (diameter)
Hafnium pellets and tantalum pellets (both pellets (- are vertical; 1
The alloy composition can be changed by adjusting the number of -.
そして真空度がlXl0−’Torr以下の高真空にし
、アルゴンガスの雰囲気中e、高周波電力2W/cm’
でスパッタリングを行ない、基板上にコバル1−を主成
分とするCo−Hf−Taの3成分系のアモルファス合
金薄服を作成する。このようにして作成さオシノ:各種
組成の合金試料が後述の各特性試験に使用される。Then, the degree of vacuum is set to a high vacuum of less than l
Sputtering is performed to form a ternary amorphous alloy thin coat of Co--Hf--Ta containing Cobal 1- as the main component on the substrate. Alloy samples of various compositions prepared in this way are used for each characteristic test described below.
第1図は、後記の合金組成表において合金中のTa含有
率Yが常に4.5原子%になるようにして、Hf含有率
Xを種々変えた場合の磁気特性図である。FIG. 1 is a magnetic characteristic diagram when the Hf content X is varied while the Ta content Y in the alloy is always 4.5 atomic % in the alloy composition table described later.
合金組成表
なお図中において曲線Bsは飽和磁束密度9曲線μeは
周波数IMHzにおける困難軸方向の透磁率2曲線He
は困難軸方向の保磁力である。この図から明らかなよう
に、Hf含有率がO原子%のCO−T a 2成分系合
金は、Bsは高いが、Heが高過ぎ、Heが低い。これ
にHfを少量添加するとHcが極端に下がり、Heは逆
に高くなる。なお、Hfの含有率がある程度以上になる
と、Hcは高くなり、Heは低くなる。一方、Bsは極
端ではないがHfの含有率の増大とともに低下する傾向
にある。In the alloy composition table, the curve Bs is the saturation magnetic flux density9 curve μe is the magnetic permeability curve 2 in the difficult axis direction at the frequency IMHz He
is the coercive force in the hard axis direction. As is clear from this figure, the CO-Ta binary alloy with an Hf content of O atomic % has high Bs, but too high He and low He. When a small amount of Hf is added to this, Hc drops extremely, while He increases. Note that when the content of Hf exceeds a certain level, Hc becomes high and He becomes low. On the other hand, Bs tends to decrease as the Hf content increases, although it is not extreme.
このような特性傾向のなかで、Bsを高く維持したまま
、Heを下げ、高μeにするためには、Hfの含有率X
を1原子%以上でかつ5g子%未満の範囲、好ましくは
1.5〜3M子%の範囲に規制する必要がある。このこ
とはTa含有率Yを若干変化しても同様である。Given these characteristic trends, in order to lower He and increase μe while maintaining Bs high, the Hf content X
It is necessary to limit the content to 1 atomic % or more and less than 5 gram %, preferably 1.5 to 3 M molecule %. This holds true even if the Ta content Y is slightly changed.
第2図は、前記合金組成表において合金中のHf含有率
Xが常に2.2原子%になるようにして、Ta含有率Y
を種々変えた場合の磁気特性図である。FIG. 2 shows that in the alloy composition table, the Hf content X in the alloy is always 2.2 atomic %, and the Ta content Y
It is a magnetic characteristic diagram when changing variously.
この図から明らかなように、Ta含有率が0原子%のC
o−Hf2成分系合金も前述と同様に、Bsは高いが、
Hcが高過ぎ、Heが低い。これにTaを少量添加する
ことによりHeが極端に下がり、Heが逆に高くなる。As is clear from this figure, C with a Ta content of 0 at%
As mentioned above, the o-Hf binary alloy also has high Bs, but
Hc is too high and He is low. By adding a small amount of Ta to this, He is extremely reduced, and on the contrary, He becomes high.
なお、Taの含有率がある程度以上になると、Heは高
くなり、Heは低くなる。一方、Bsは極端ではないが
Taの含有率の増大とともに低下する傾向がある。Note that when the Ta content exceeds a certain level, He becomes high and He becomes low. On the other hand, Bs tends to decrease as the Ta content increases, although it is not extreme.
このような特性傾向のなかで、Bsを高く維持したまま
、Heを下げ、高μeにするためには、Taの含有率Y
を4〜10原子%、好ましくは6〜8原子%の範囲に規
制する必要がある。このことはHf含有率Xを若干変化
させても同様である。Given these characteristic trends, in order to lower He and increase μe while maintaining Bs high, the Ta content Y
It is necessary to control the content within the range of 4 to 10 atomic %, preferably 6 to 8 atomic %. This holds true even if the Hf content X is slightly changed.
第3図は、本発明に係るCo(93,3原子%)−Hf
(2,2原子%)−Ta (4,5原子%)の3成分
系アモルファス合金(曲線A)とCo。Figure 3 shows Co (93.3 atomic%)-Hf according to the present invention.
(2,2 atomic %)-Ta (4,5 atomic %) ternary amorphous alloy (curve A) and Co.
(97,8原子%)−Hf (2,2原子%)の2成分
系アモルファス合金(曲線B)の各周波数におけるHe
を比較して示す図である。この図からも明らかなように
、本発明の軟磁性材料は各周波数においても常に高い透
磁率を有し、広い周波数領域において特性が安定してい
る。(97,8 atomic%)-Hf (2,2 atomic%) binary amorphous alloy (curve B) at each frequency.
FIG. As is clear from this figure, the soft magnetic material of the present invention always has high magnetic permeability at each frequency, and its characteristics are stable over a wide frequency range.
本発明に係るC o −Hf −T aの3成分系アモ
ルファス合金は誘導磁気異方性が出やすいため、アモル
ファス合金の磁化困難軸方向を磁気シールド薄膜の磁路
方向に向けることができる。ところでGo−Hf−Ta
の3成分系合金は、スパッタリング直後の薄膜の異方性
磁界Hkが大きい。この異方性磁界を小さくする手段に
ついて種々検討した結果、磁気シールド薄膜として形成
された前記3成分系アモルファス合金薄膜を回転磁界中
で熱処理する方法が有効であることを見出した。この回
転磁界中の熱処理で、温度は300〜400(’C)。Since the ternary amorphous alloy of Co-Hf-Ta according to the present invention easily exhibits induced magnetic anisotropy, the direction of the difficult axis of magnetization of the amorphous alloy can be directed to the direction of the magnetic path of the magnetic shield thin film. By the way, Go-Hf-Ta
The ternary alloy has a large anisotropic magnetic field Hk in the thin film immediately after sputtering. As a result of various studies on means for reducing this anisotropic magnetic field, it has been found that a method of heat treating the ternary amorphous alloy thin film formed as a magnetic shield thin film in a rotating magnetic field is effective. In this heat treatment in a rotating magnetic field, the temperature is 300 to 400 ('C).
回転速度は10〜20 (r、p、m、)r磁界の強さ
は100(Oe)以上、処理時間は3時間以上が適当で
ある。例えば温度を350(℃)、回転速度をlo (
r、Pa m、) 、磁界の強さを100(Os)、処
理時間を3時間に設定して、スパッタリングによって形
成した磁気シールド薄膜を処理す九ば、異方性磁界Hk
を約4(Oe)程度まで下げることができる。It is appropriate that the rotation speed is 10 to 20 (r, p, m,) r, and the strength of the magnetic field is 100 (Oe) or more, and the processing time is 3 hours or more. For example, the temperature is 350 (℃) and the rotation speed is lo (
r, Pa m, ), the magnetic field strength was set to 100 (Os), and the processing time was set to 3 hours to process the magnetic shielding thin film formed by sputtering.
can be lowered to about 4 (Oe).
第4図は、本発明の実施例に係る薄膜磁気再生ヘッドの
要部分解斜視図である。1は非磁性材からなる基板、2
は絶縁被膜、3は第1の磁気シールド薄膜、4はMR素
子、5および6は導電薄膜、7は第2の磁気シールド薄
膜である。FIG. 4 is an exploded perspective view of essential parts of a thin film magnetic reproducing head according to an embodiment of the present invention. 1 is a substrate made of non-magnetic material; 2
3 is an insulating film, 3 is a first magnetic shield thin film, 4 is an MR element, 5 and 6 are conductive thin films, and 7 is a second magnetic shield thin film.
前記第1の磁気シールド薄膜3および第2の磁気シール
ド薄膜7はCo −Hf −T aの3成分系アモルフ
ァス合金薄膜からなり、合金中のCo含有率は93.3
原子%、Hf含有率は2.2原子%、Ta含有率は4.
5原子%であり、前記の条件下において回転磁界中で熱
処理されている。The first magnetic shield thin film 3 and the second magnetic shield thin film 7 are made of a three-component amorphous alloy thin film of Co-Hf-Ta, and the Co content in the alloy is 93.3.
atomic %, Hf content is 2.2 atomic %, Ta content is 4.
5 atom %, and was heat treated in a rotating magnetic field under the above conditions.
本発明は前述のように薄膜磁気再生ヘッドの磁気シール
ド薄膜を、コバルトを主成分とし、それにハフニウムと
、タンタルを少量添加した3成分系アモルファス合金で
構成したことを特徴とするものである。この3成分系ア
モルファス合金は、透磁率ならびに飽和磁束密度が高い
から、磁気シールド効果を十分に発揮することができ、
再生感度の向上が図れ、また磁気シールド薄膜の膜厚を
さらに薄くすることも可能で、さらにハフニウムとタン
タルの含有比率を適宜調整することにより、磁気シール
ド薄膜の磁歪を零かあるいはそれに近づけることができ
るなどの利点を有している。As described above, the present invention is characterized in that the magnetic shielding thin film of the thin-film magnetic reproducing head is composed of a three-component amorphous alloy containing cobalt as a main component, to which small amounts of hafnium and tantalum are added. This three-component amorphous alloy has high magnetic permeability and saturation magnetic flux density, so it can fully demonstrate the magnetic shielding effect.
The reproduction sensitivity can be improved, and the thickness of the magnetic shielding thin film can be made even thinner. Furthermore, by appropriately adjusting the content ratio of hafnium and tantalum, the magnetostriction of the magnetic shielding thin film can be made to be zero or close to it. It has the advantage of being able to
第1図は本発明に係るC o −Hf −T a系アモ
ルファス合金中のHf含有率と各種磁気特性との関係を
示す特性図、第2図は前記合金中のTa含有率と各種磁
気特性との関係を示す特性図、第3図は前記合金と比較
例の合金との各周波数における磁気特性図、第4図は本
発明の実施例に係る薄膜磁気再生ヘッドの要部分解斜視
図である。
1・・基板、3・・・第1の磁気シールド薄膜、4・・
・MR素子、7・・・第2の磁気シールド薄膜。
=1A
第1図
Hf含有牟(at%)
第2図
TO含有牟 (at%)
周蔑緻(MHz)Figure 1 is a characteristic diagram showing the relationship between the Hf content and various magnetic properties in the Co-Hf-Ta amorphous alloy according to the present invention, and Figure 2 is the Ta content in the alloy and various magnetic properties. FIG. 3 is a magnetic characteristic diagram at each frequency of the aforementioned alloy and a comparative example alloy, and FIG. 4 is an exploded perspective view of essential parts of a thin film magnetic reproducing head according to an embodiment of the present invention. be. 1... Substrate, 3... First magnetic shield thin film, 4...
- MR element, 7... second magnetic shield thin film. =1A Figure 1: Hf content (at%) Figure 2: TO content (at%) Frequency (MHz)
Claims (1)
れぞれ形成して成る薄膜磁気再生ヘッドにおいて、前記
磁気シールド薄膜が、コバルトを主成分とし、それに少
量のハフニウムとタンタルとを添加した3成分系のアモ
ルファス合金で構成されていることを特徴とする薄膜磁
気再生ヘッド。 (2、特許請求の範囲第(1)項記載において、前記ハ
フニウムの含有率が1原子%以上でかつ5 )IR子%
未満、タンタルの含有率が4原子%でかつ10原子%以
下の範囲にそれぞれ規制されていることを特徴とする薄
膜磁気再生ヘッド。 (3)特許請求の範囲第(1)項記載において、前記3
成分系アモルファス合金薄膜が回転磁界中で熱処理され
たことを特徴とする薄膜磁気再生ヘッド。[Scope of Claims] (1) In a thin-film magnetic reproducing head in which magnetic shielding thin films are formed on both sides of a magnetoresistive element, the magnetic shielding thin film mainly contains cobalt and small amounts of hafnium and tantalum. A thin film magnetic reproducing head characterized in that it is made of a three-component amorphous alloy added with. (2. Claim (1), wherein the hafnium content is 1 atomic % or more, and 5) IR element %
1. A thin film magnetic reproducing head characterized in that the content of tantalum is limited to 4 atomic % or less and 10 atomic % or less. (3) In claim (1), the above-mentioned 3
A thin-film magnetic reproducing head characterized in that a component-based amorphous alloy thin film is heat-treated in a rotating magnetic field.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12872483A JPS6022727A (en) | 1983-07-16 | 1983-07-16 | Thin film magnetic playback head |
KR1019840002876A KR890003043B1 (en) | 1983-07-16 | 1984-05-25 | Magnetic head |
US06/630,900 US4641213A (en) | 1983-07-16 | 1984-07-16 | Magnetic head |
DE19843426117 DE3426117A1 (en) | 1983-07-16 | 1984-07-16 | MAGNETIC HEAD |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12872483A JPS6022727A (en) | 1983-07-16 | 1983-07-16 | Thin film magnetic playback head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6022727A true JPS6022727A (en) | 1985-02-05 |
Family
ID=14991869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12872483A Pending JPS6022727A (en) | 1983-07-16 | 1983-07-16 | Thin film magnetic playback head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6022727A (en) |
-
1983
- 1983-07-16 JP JP12872483A patent/JPS6022727A/en active Pending
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