JPS6022723A - Thin film magnetic head - Google Patents

Thin film magnetic head

Info

Publication number
JPS6022723A
JPS6022723A JP12872283A JP12872283A JPS6022723A JP S6022723 A JPS6022723 A JP S6022723A JP 12872283 A JP12872283 A JP 12872283A JP 12872283 A JP12872283 A JP 12872283A JP S6022723 A JPS6022723 A JP S6022723A
Authority
JP
Japan
Prior art keywords
thin film
core
thin
magnetic field
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12872283A
Other languages
Japanese (ja)
Inventor
Hiromi Nakajima
中嶋 啓視
Takashi Hatauchi
隆史 畑内
Koichi Mukasa
幸一 武笠
Hiroshi Shimada
寛 島田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP12872283A priority Critical patent/JPS6022723A/en
Publication of JPS6022723A publication Critical patent/JPS6022723A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109Details

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)

Abstract

PURPOSE:To improve the recording and reproducing efficiency of a magnetic head by constituting thin core films of a ternary amorphous alloy which consists essentially of cobalt and is added with a small amt. of hafnium and tungsten. CONSTITUTION:A thin core film 2, a thin insulating film 3 consisting of a nonmagnetic material, a thin conductive film 4 and a thin core film 6 via a thin insulating film 5 are formed on a base plate 1. The films 2 and 6 consist of a thin film of a ternary amorphous alloy consisting of Co-Hf-W and are obtd. by regulating the respective contents in the alloy to 90.8atom% Co, 2.2atom% Hf and 7.0atom% W and heat-treating the alloy in a rotating magnetic field. The treating conditions thereof are 300-400 deg.C temp., 10-20rpm rotating speed and >=100Oe intensity of the magnetic field and >=3hr treating time. The anisotropic magnetic field is decreased to about 4Oe by such treatment.

Description

【発明の詳細な説明】 本発明は、薄膜磁気ヘッドに係り、特にそJしのコア薄
膜の材質に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film magnetic head, and particularly to the material of the core thin film thereof.

薄膜磁気記録ヘッドは、非磁性材からなる基板上に第1
のコア簿膜と、非磁性材薄膜と、第2のコア薄膜とがス
パッタリングや蒸着などによって積層状態に形成された
ものから構成さオ【、ている。
A thin film magnetic recording head has a first magnetic recording head on a substrate made of a non-magnetic material.
A core film, a nonmagnetic material thin film, and a second core thin film are formed in a laminated state by sputtering, vapor deposition, or the like.

この薄膜磁気記録ヘッドは薄膜磁気再生・\ットと対に
なって薄膜磁気ヘッドを構成し、例えば電子計算機の記
憶装置などに用いられる。薄膜磁気記録ヘッドにおいで
は記録効率を高めるために第1および第2のコア薄膜に
、高透磁率で高い飽和磁束密度を有する軟磁性材料を用
いることが必要である。
This thin film magnetic recording head is paired with a thin film magnetic reproducing head to form a thin film magnetic head, which is used, for example, in a storage device of an electronic computer. In a thin film magnetic recording head, in order to improve recording efficiency, it is necessary to use a soft magnetic material having high magnetic permeability and high saturation magnetic flux density for the first and second core thin films.

従来、この種磁気ヘッドの第1および第2のコア#股と
して例えばパーマロイなどが用いられていたが、このも
のは飽和磁束密度が低い。低飽和磁束密度であると記録
時にコア薄膜が磁気飽和してしまい、特にメタルテープ
やクロムテープなどのような飽和磁束密度の高い磁気記
録媒体に列し゛C信号を記録する場合、記録効率が悪い
Conventionally, permalloy or the like has been used for the first and second cores of this type of magnetic head, but this material has a low saturation magnetic flux density. If the saturation magnetic flux density is low, the core thin film will be magnetically saturated during recording, and recording efficiency will be poor, especially when recording C signals on magnetic recording media with high saturation magnetic flux density, such as metal tape or chrome tape. .

ぞのたの、コ、イルのターンJIIを増やしたり、記録
電流を増大したりして記録効率の低下を抑制することが
コシ゛えらオLる。しがしコイルのターン数を増やすこ
とば薄膜磁気ヘッドの構造上州短で、3〜5タ一ン程度
に制限され、十分な効果が得られない。一方、記録電流
を増大すると発熱量が大きくなり、断線を生じたりコア
薄膜の磁性劣化を生じる。
It is highly recommended to suppress the decrease in recording efficiency by increasing the turn JII of the coils and the recording current or by increasing the recording current. However, increasing the number of turns in the winding coil is difficult due to the structure of the thin-film magnetic head, and is limited to about 3 to 5 turns, making it impossible to obtain a sufficient effect. On the other hand, when the recording current is increased, the amount of heat generated increases, causing wire breakage and magnetic deterioration of the core thin film.

本発明誓らは、スパッタリングなどによって得られるア
モルファス合金薄膜について種々研究した結果、コバル
i”(Go)を主成分とし、夕景のハフニウム(Hf)
とタングステン(W)を添加シf=CO−Hf−Wの3
成分系のアモルファス合金からなる薄膜が、薄膜磁気・
\ラドのコア薄膜として非常に好適であることを見出し
た。
As a result of various studies on amorphous alloy thin films obtained by sputtering etc., the inventors of the present invention have found that the main component is Kobal i'' (Go), and hafnium (Hf) in the evening scene.
and tungsten (W) added f = CO-Hf-W 3
Thin films made of amorphous alloys are used for thin film magnetism.
It has been found that it is very suitable as a core thin film for RAD.

基板に結晶化ガラスを用い、コバルトディスク(直径1
01.6mc+、厚さ5mm)上にハフニウムのペレッ
トとタングステンのペレット(いず」しのペレットも縦
10mm、横10mm、厚さ1mm)を中心より放射状
に交互に配置し、ターゲット上のペレッ1−の数を調整
することにより合金組成が変えられるようにする。そし
て真空度がlXl0−’Torr以下の高真空にし、ア
ルゴンガスの雰囲気中で、高周波電力2W/cm”でス
パッタリングを行ない、基板上にコバルトを主成分とす
るCo−Hf−Wの3成分系のアモルファス合金薄膜を
作成することができる。このようにして作成された各種
組成の合金試料が後述の各特性試験に使用される。
Using crystallized glass as the substrate, a cobalt disk (diameter 1
Hafnium pellets and tungsten pellets (10mm long, 10mm wide, 1mm thick) are placed alternately radially from the center on the target. The alloy composition can be changed by adjusting the number of -. Then, the degree of vacuum is set to a high vacuum of less than l Amorphous alloy thin films of various types can be created.Alloy samples of various compositions created in this way are used for each characteristic test described below.

第1図は、後記の合金組成表において合金中のW含有率
Yが常に7.0原子%になるようにして、Hf含有率X
を種々変えた場合の磁気特性図である。
Figure 1 shows the Hf content
It is a magnetic characteristic diagram when changing variously.

合金組成表 なお図中において曲線Bsは飽和磁束密度2曲線μeは
周波数I M Hzにおける困難軸方向の透磁率4曲線
Heは困難軸方向の保磁力である。この図から明らかな
ように、Hf含有率が0原子%のCo−W22成系合金
は、Bsは高いが、Hcが高過ぎ、Heが低い。これに
Hfを少量添加するとHcが極端に下がり、Heは逆に
高くなる。
In the alloy composition table, the curve Bs is the saturation magnetic flux density; the curve μe is the magnetic permeability in the hard axis direction at a frequency of I MHz; and the curve He is the coercive force in the hard axis direction. As is clear from this figure, the Co-W22 alloy with an Hf content of 0 atomic % has high Bs, but too high Hc and low He. When a small amount of Hf is added to this, Hc drops extremely, while He increases.

なお、Hfの含有率がある程度以上になると、Heは低
くなる。一方、Bsは極端ではないがHfの含有率の増
大とともに低下する傾向にある。
Note that when the content of Hf exceeds a certain level, He becomes low. On the other hand, Bs tends to decrease as the Hf content increases, although it is not extreme.

このような特性傾向のなかで、Bsを高く維持したまま
、Heを下げ、高μBにするためには、Hfの含有率X
を1原子%以上でかつ5原子%未満の範囲、好ましくは
1.5〜3原子%の範囲に規制する必要がある。このこ
とはW含有率Yを若干変化させても同様である。
Given these characteristic trends, in order to lower He and achieve high μB while keeping Bs high, the Hf content X
It is necessary to control the content to a range of 1 atomic % or more and less than 5 atomic %, preferably 1.5 to 3 atomic %. This holds true even if the W content Y is slightly changed.

第2図は、前記合金組成表において合金中のHf含有率
Xが常に2.2yK子%になるようにして、W含有率Y
を種々変えた場合の磁気特性図である。
Figure 2 shows that in the alloy composition table, the Hf content X in the alloy is always 2.2yK%, and the W content Y
It is a magnetic characteristic diagram when changing variously.

この図から明らかなように、W含有率がOyK子%のC
o−Hf2成分系合金も前述と同様に、BSは高いが、
Heが高過ぎ、Heが低い。これにWを少量添加するこ
とによりHeが極端に下がり、Heが逆に高くなる。な
お、Wの含有率がある程度以上になると、Heは低くな
る。一方、Bsは極端ではないがWの含有率の増大とと
もに低下する傾向がある。
As is clear from this figure, C with a W content of OyK%
As mentioned above, the o-Hf binary alloy also has a high BS, but
He is too high and He is low. By adding a small amount of W to this, He becomes extremely low, and conversely becomes high. Note that when the W content exceeds a certain level, He becomes low. On the other hand, Bs tends to decrease as the W content increases, although this is not extreme.

このような特性傾向のなかで、Bsを高く維持したまま
、Heを下げ、高μeにするためには、Wの含有率Yを
5〜12m子%、好ましくは6〜8原子%の範囲に規制
する必要がある。このことはHf含有率Xを若干変化さ
せても同様である。
Given these characteristic trends, in order to lower He and increase μe while maintaining high Bs, the W content Y should be in the range of 5 to 12 atomic %, preferably 6 to 8 atomic %. It needs to be regulated. This holds true even if the Hf content X is slightly changed.

本発明に係るGo−Hf−Wの3成分系アモルファス合
金は誘導磁気異方性が出やすいため、高周波特性を考慮
して、アモルファス合金の磁化困難軸方向をコア薄膜の
動作方向に向けることができる。ところでG o −H
f −Wの3成分系合金は、スパッタリング直後の薄膜
の異方性磁界Hkは大きい。この異方性磁界を小さくす
る手段につし1て種々検討した結果、コア薄膜として形
成された前記3成分系のアモルファス合金薄膜を回転磁
界中で熱処理する方法が有効であることを見出した。
Since the Go-Hf-W three-component amorphous alloy according to the present invention tends to exhibit induced magnetic anisotropy, it is possible to orient the difficult axis of magnetization of the amorphous alloy in the direction of operation of the core thin film in consideration of high frequency characteristics. can. By the way, G o -H
In the f-W ternary alloy, the anisotropic magnetic field Hk of the thin film immediately after sputtering is large. As a result of various studies regarding means for reducing this anisotropic magnetic field, it was found that a method of heat-treating the ternary amorphous alloy thin film formed as the core thin film in a rotating magnetic field is effective.

この回転磁界中の熱処理で、温度は300〜400(℃
)、回転速度は10〜20 (r、p、m、) 、磁界
の強さは100(Oe)以上、処理時間は3時間以上が
適当である。例えば温度を350 (℃)、回転速度を
10 (r−p、m、)磁界の強さを100(Oe)、
処理時間を3時間に設定して、スパッタリングによって
形成したコア薄膜を処理すれば、異方性磁界Hkを約4
(Os)程度まで下げることができる。
In this heat treatment in a rotating magnetic field, the temperature is 300 to 400 (℃
), a rotational speed of 10 to 20 (r, p, m,), a magnetic field strength of 100 (Oe) or more, and a processing time of 3 hours or more. For example, the temperature is 350 (℃), the rotation speed is 10 (r-p, m,), the magnetic field strength is 100 (Oe),
If the processing time is set to 3 hours and the core thin film formed by sputtering is processed, the anisotropic magnetic field Hk will be approximately 4 hours.
(Os).

第3図は、本発明の実施例に係る薄膜磁気記録ヘッドの
一部を断面にした斜視図である。ガラスやシリコンなど
の非磁性材からなる基板1の上には、最初第1のコア薄
膜2が形成され、その上に非磁性材の絶縁薄膜3.導電
薄膜4ならびに絶縁薄膜5を介して第2のコア薄膜6が
形成される。
FIG. 3 is a partially sectional perspective view of a thin film magnetic recording head according to an embodiment of the present invention. A first core thin film 2 is first formed on a substrate 1 made of a non-magnetic material such as glass or silicon, and an insulating thin film 3 made of a non-magnetic material is formed thereon. A second core thin film 6 is formed via the conductive thin film 4 and the insulating thin film 5.

これら第1のコア薄@2.絶縁薄膜3.導電薄膜4、絶
縁薄膜5ならびに第2のコア薄膜6は、スパッタリング
などの成膜技術によって順次所定の厚さに形成される。
These first core thin @2. Insulating thin film 3. The conductive thin film 4, the insulating thin film 5, and the second core thin film 6 are sequentially formed to a predetermined thickness by a film forming technique such as sputtering.

なお、4a、4bは外部接続用端子部である。Note that 4a and 4b are terminal portions for external connection.

前記第1のコア薄膜2ならびに第2のコア薄膜6はGo
−Hf−Wの3成分系アモルファス合金薄膜からなりC
Oの含有率は90.8原子%、Hfの含有率は2.2原
子%、Wの含有率は7.0原子%であり、前述の条件下
において回転磁界中で熱処理される。
The first core thin film 2 and the second core thin film 6 are Go
- Consisting of a three-component amorphous alloy thin film of Hf-W
The content of O is 90.8 atomic %, the content of Hf is 2.2 atomic %, and the content of W is 7.0 atomic %, and is heat-treated in a rotating magnetic field under the above-mentioned conditions.

本発明は前述のように薄膜磁気ヘッドのコア薄膜を、コ
バルトを主成分とし、それにハフニウムとタングステン
を少量添加した3成分系アモルファス合金で構成したこ
とを特徴とするものである。
As described above, the present invention is characterized in that the core thin film of the thin film magnetic head is composed of a three-component amorphous alloy containing cobalt as a main component and to which small amounts of hafnium and tungsten are added.

この3成分系アモルファス合金は、高い飽和磁束密度と
透磁率とを有しているから、磁気ヘッドの記録効率およ
び再生効率を高めることができる。
Since this three-component amorphous alloy has high saturation magnetic flux density and magnetic permeability, it is possible to improve the recording efficiency and reproduction efficiency of the magnetic head.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係るGo−Hf−W系アモルファス合
金中のHf含有率と各種磁気特性との関係を示す特性図
、第2図は前記合金中のW含有率と各種磁気特性との関
係を示す特性図、第3図は本発明の実施例に係る薄膜磁
気ヘッドの一部を断面にした斜視図である。 1・・・基板、2・・・第1のコア薄膜、3・・・絶縁
薄膜、4・・・導電薄膜、訃・・絶縁薄膜、6・・・第
2のコア落照。 第2図 W含朝ヤ(Gt%) 第3図
FIG. 1 is a characteristic diagram showing the relationship between the Hf content and various magnetic properties in the Go-Hf-W amorphous alloy according to the present invention, and FIG. 2 is a characteristic diagram showing the relationship between the W content in the alloy and various magnetic properties. FIG. 3 is a characteristic diagram showing the relationship, and is a partially sectional perspective view of a thin film magnetic head according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Substrate, 2... 1st core thin film, 3... Insulating thin film, 4... Conductive thin film, 5... Insulating thin film, 6... 2nd core reflection. Fig. 2 W including morning ya (Gt%) Fig. 3

Claims (1)

【特許請求の範囲】 (1)非磁性Hからなる基板上に第1のコア薄膜と非磁
性材薄膜と、第2のコア薄膜とが積層状態で形成される
薄膜磁気ヘッドにおいて、前記コア薄膜が、コバルトを
主成分とし、少量のハフニウムとタングステンとを添加
した3成分系のアモルファス合金で4J成されているこ
とを特徴とする薄膜磁気ヘッド。 (2、特許請求の範囲第(1)項記載において、前記ハ
フニウムの含有率が1原子%以上でかつ5原子%未、1
1θ、タングステンの含有率が5原子%以上でかつ12
原子%以下に規制されでいることを特徴とする薄膜磁気
ヘッド。 (3)特許請求の範囲第(1)項記載において、前記コ
ア薄膜として形成されたコバルト−ハフニウム−タング
ステンの3成分系アモルファス合金薄膜が゛回転磁界中
で熱処理されたことを特徴とする薄膜磁気ヘッド。
Scope of Claims: (1) In a thin film magnetic head in which a first core thin film, a nonmagnetic material thin film, and a second core thin film are formed in a laminated state on a substrate made of nonmagnetic H, the core thin film A thin film magnetic head characterized in that it is made of 4J of a three-component amorphous alloy containing cobalt as a main component and adding small amounts of hafnium and tungsten. (2. In claim (1), the hafnium content is 1 atomic % or more and less than 5 atomic %, 1
1θ, tungsten content is 5 at% or more and 12
A thin film magnetic head characterized by being regulated to atomic percent or less. (3) In claim (1), the thin film magnetic thin film is characterized in that the core thin film formed as the cobalt-hafnium-tungsten ternary amorphous alloy thin film is heat-treated in a rotating magnetic field. head.
JP12872283A 1983-07-16 1983-07-16 Thin film magnetic head Pending JPS6022723A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12872283A JPS6022723A (en) 1983-07-16 1983-07-16 Thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12872283A JPS6022723A (en) 1983-07-16 1983-07-16 Thin film magnetic head

Publications (1)

Publication Number Publication Date
JPS6022723A true JPS6022723A (en) 1985-02-05

Family

ID=14991813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12872283A Pending JPS6022723A (en) 1983-07-16 1983-07-16 Thin film magnetic head

Country Status (1)

Country Link
JP (1) JPS6022723A (en)

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