JPS63311613A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPS63311613A JPS63311613A JP14605887A JP14605887A JPS63311613A JP S63311613 A JPS63311613 A JP S63311613A JP 14605887 A JP14605887 A JP 14605887A JP 14605887 A JP14605887 A JP 14605887A JP S63311613 A JPS63311613 A JP S63311613A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- film
- alloy
- crystal grain
- coercive force
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 85
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 239000010408 film Substances 0.000 claims abstract description 48
- 239000013078 crystal Substances 0.000 claims abstract description 25
- 229910001004 magnetic alloy Inorganic materials 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910003321 CoFe Inorganic materials 0.000 claims abstract description 10
- 230000004907 flux Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 14
- 238000004544 sputter deposition Methods 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 27
- 229910045601 alloy Inorganic materials 0.000 description 25
- 239000000956 alloy Substances 0.000 description 25
- 229910000889 permalloy Inorganic materials 0.000 description 13
- 230000007423 decrease Effects 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 4
- 229910002441 CoNi Inorganic materials 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- HDBDDEFTKCWERY-UHFFFAOYSA-N (6-oxo-7,8,9,10-tetrahydrobenzo[c]chromen-3-yl) benzoate Chemical compound C=1C=C2C=3CCCCC=3C(=O)OC2=CC=1OC(=O)C1=CC=CC=C1 HDBDDEFTKCWERY-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 102100024017 Glycerol-3-phosphate acyltransferase 3 Human genes 0.000 description 1
- 101000904259 Homo sapiens Glycerol-3-phosphate acyltransferase 3 Proteins 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、高密度磁記録に適する薄膜磁気ヘッドに係り
、特に書込特性のよい薄ｖ！、磁気ヘッドに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin-film magnetic head suitable for high-density magnetic recording, and particularly to a thin-film magnetic head with good writing characteristics. , relating to magnetic heads.
１等膜磁気ヘッドは、半導体プロセスにより基板上に形
成したコイル、絶Ｍ層、磁極から構成される。すなわち
、薄膜磁気ヘッドの縦断面構成を示した第２図のように
、下部磁性Ｊｌｌ上に絶Ｒ層２が積層されている。この
絶縁層２上には、複数のコイル５を内蔵する絶縁層３が
積層されている。A uniform film magnetic head is composed of a coil, an absolute M layer, and a magnetic pole formed on a substrate by a semiconductor process. That is, as shown in FIG. 2, which shows the vertical cross-sectional structure of the thin film magnetic head, the absolute R layer 2 is laminated on the lower magnetic Jll. On this insulating layer 2, an insulating layer 3 containing a plurality of coils 5 is laminated.
この絶縁層３上には、上記磁性層６が積層されている。On this insulating layer 3, the magnetic layer 6 is laminated.
薄膜磁気ヘッド磁極に適用される磁性膜としては、厚さ
１〜２μｍのＮ１ａｔＦｅｚｓ（パーマロイ）合金が一
般的に用いられている。パーマロイは、磁歪定数λＳが
小さく、−軸異方性の付与が容易で困難軸方向保磁力Ｈ
ＣＨを１エルステツド以下とすることができ、しかも化
学的、熱的安定性がよい利点がある。一方、パーマロイ
の飽和磁束密度Ｂｓは約１００００ガウスであり、薄膜
磁気ヘッド磁極厚さを減少させて、記録密度を上昇させ
るには限界があった。すなわち、第２図に示す薄膜磁気
ヘッド下部磁性厚１および上部磁性層６の厚さし、１お
よびｔｇｚを減少させることにより、書込磁界９の空間
分布を急峻にし、記録媒体１２に書き込まれる記録ビッ
ト１１の長さを短かくすることで記録密度の増大が可能
であるが、書込磁界強度は低下する。これを補うため、
コイル５に流す電流を増加させるが、パーマロイは前述
のとと＜Ｂｓが低く磁極が飽和して、書込磁界が十分発
生しない、したがって、磁極部分に飽和磁束密度の高い
非晶質Ｃｏ系合金（Ｂｓ ＝１３０００〜１５０００ガ
ウス）、結晶質Ｆｅ系合金（Ｂｓ ＝１８０００〜２１
０００ガウス）等を過分することが考えられる。しかし
、非晶質Ｃｏ系合金は蔑安定性に問題があり、また結晶
質Ｆｅ系合金は耐食性に問題があり、これらの問題は未
だ解決されていない。As a magnetic film applied to the magnetic pole of a thin-film magnetic head, a N1atFezs (permalloy) alloy having a thickness of 1 to 2 μm is generally used. Permalloy has a small magnetostriction constant λS, making it easy to impart −axis anisotropy and difficult to impart axial coercive force H.
It has the advantage of being able to reduce CH to 1 oersted or less and having good chemical and thermal stability. On the other hand, the saturation magnetic flux density Bs of permalloy is about 10,000 Gauss, and there is a limit to increasing the recording density by decreasing the thickness of the thin film magnetic head pole. That is, by decreasing the lower magnetic thickness 1 and the upper magnetic layer 6 thickness 1 and tgz of the thin film magnetic head shown in FIG. Although it is possible to increase the recording density by shortening the length of the recording bits 11, the write magnetic field strength decreases. To compensate for this,
Although the current flowing through the coil 5 is increased, permalloy has a low Bs as described above and the magnetic pole is saturated and a sufficient write magnetic field is not generated. Therefore, an amorphous Co-based alloy with a high saturation magnetic flux density is (Bs = 13000-15000 Gauss), crystalline Fe-based alloy (Bs = 18000-21
000 Gauss) etc. may be overestimated. However, amorphous Co-based alloys have a problem with stability, and crystalline Fe-based alloys have a problem with corrosion resistance, and these problems have not been solved yet.
フエロマグネテイズム（ホゾルス著、ファンノストラン
ド出版、１９５１年） （Ｆｅｒｏｍａｇｎｅｔｉｓ
ｍ。Feromagnetism (by Hosols, Van Nostrand Publishing, 1951)
m.
Ｒ，Ｍ、 Ｂｏｚｏｒｔｈ、 Ｖａｎ Ｎｏ５ｔｒａｎ
ｄｌ ９５１ ） １６５頁および６７５頁によれば、
Ｃｏ−Ｆｅ−Ｎｉ三元系状態図におけるＣＯ主成分領域
において、磁歪定数がほぼ零、かつ飽和磁束密度１２０
００ガウス以上の領域が存在することが明らかである。R, M, Bozorth, Van No5tran
dl 951) on pages 165 and 675,
In the CO main component region in the Co-Fe-Ni ternary system phase diagram, the magnetostriction constant is almost zero and the saturation magnetic flux density is 120.
It is clear that a region of 0.00 Gauss or higher exists.
しかし、この領域の合金系は、磁気異方性定数Ｋｌが大
きく（〜１０’ｅｒｇ／ｄ） 、当該合金をそのまま磁
気ヘッド磁極として用いても、透磁率が低く実用となら
ない。従来より、透磁率を高めるため、例えばアイ・イ
ー・イー・イー トランザクション・オン・マグネティ
クス エム・ニー・ジー１３゜１５２１ （１９７７年
） Ｉ Ｅ Ｅ Ｅ 、 Ｔｒａｎｓ、 Ｍａｇｎ。However, the alloy system in this region has a large magnetic anisotropy constant Kl (~10'erg/d), and even if the alloy is used as it is as a magnetic head pole, the magnetic permeability is low and it is not practical. Conventionally, in order to increase magnetic permeability, for example, IEE Transactions on Magnetics MNE 13° 1521 (1977) IEE, Trans, Magn.
ＭＡＧ−１３，１５２１（１９７７）に示されるごとく
、パーマロイとＡＱｚＯａ等の誘電体を用い多層膜とし
、数１０ミクロン幅の短冊状に加工することにより、高
周波領域での誘磁率が増大することは知られている。こ
れは、高周波励磁時、パーマロイ内に発生する渦電流に
よるエネルギー損失が、薄膜化と短冊状加工という次元
形状の限定によって減少することによる。したがって、
本質的に異方性の大きいＣｏＮｉＦｅ系金属は、そのま
ま多層化しても誘導率は向上しない。一方、アイ・イー
・イー・イー トランザクション オブ マグネティク
ス エム・ニー・ジ−１６６頁（１９６１年）、ＩＥＥ
Ｅ Ｔｒａｎｓ、 Ｍａｇｎ、 ＭＡＧ−１，６６゜
（１９６１）によれば、パーマロイの蒸着中、互いに直
交し、交播する磁界を基板に印加することにより、パー
マロイの一軸異方性定数を制御し得ることが知られてい
る。これを、ＣｏＮｉＦｅ合金の電着法による形状に適
用した例が、特開昭６１−７６６４２号公報に開示され
ている。この従来例によれば、ＣｏＮｉＦｅの合金の異
方性磁界Ｈには約１７６に低減される。As shown in MAG-13, 1521 (1977), by forming a multilayer film using dielectrics such as permalloy and AQzOa and processing it into a strip shape with a width of several tens of microns, the dielectric constant in the high frequency range can be increased. Are known. This is because energy loss due to eddy currents generated in permalloy during high-frequency excitation is reduced by thinning the film and limiting the dimensional shape by processing it into a rectangular shape. therefore,
CoNiFe-based metal, which inherently has high anisotropy, does not improve its dielectric constant even if it is multilayered as it is. On the other hand, IEE Transactions of Magnetics, M.N.G., page 166 (1961), IEE
According to E Trans, Magn, MAG-1, 66° (1961), the uniaxial anisotropy constant of permalloy can be controlled by applying orthogonal to each other and alternating magnetic fields to the substrate during the deposition of permalloy. It is known. An example in which this is applied to the shape of a CoNiFe alloy by electrodeposition is disclosed in Japanese Patent Application Laid-open No. 76642/1983. According to this conventional example, the anisotropic magnetic field H of the CoNiFe alloy is reduced to about 176.
また、ＣｏＮｌＦｏ合金を真空蒸着等の方法により形成
することが、特公昭６０−８２６３８号公報に開示され
ている。Further, Japanese Patent Publication No. 60-82638 discloses that a CoNlFo alloy is formed by a method such as vacuum evaporation.
しかし、上記特開昭６１−７６６４２号公報に記載され
た従来例では、電着法により形成された磁性収は、薄膜
磁気ヘッド形成プロセス中に膜が受ける熱処理により磁
気特性が劣化することにより、保磁力が増大する難点が
ある。However, in the conventional example described in Japanese Unexamined Patent Publication No. 61-76642, the magnetic properties formed by the electrodeposition method deteriorate due to the heat treatment that the film undergoes during the thin-film magnetic head forming process. The problem is that the coercive force increases.
また、特公昭６０−８２６３８号公報記載の形成条件で
ある基板温度３５０℃、膜堆積速度１８人／秒では、飽
和磁束密度の高い高Ｃｏ領域、すなわちＣｏ濃度７０重
量％以上の合金の保磁力を低下させることはできない。Furthermore, under the formation conditions described in Japanese Patent Publication No. 60-82638, where the substrate temperature is 350°C and the film deposition rate is 18 people/sec, the coercive force of the alloy is in the high Co region with high saturation magnetic flux density, that is, the Co concentration is 70% by weight or more. cannot be lowered.
すなわち、上記従来技術では、高飽和磁束密度を有する
ＣｏＦｅまたはＣｏＮｉＦｅ合金が高速磁率すなわち保
磁力が小さく形成される点について考慮されておらず、
これらの合金を薄膜磁気ヘッド用磁極として用いるには
難点があった。That is, the above-mentioned conventional technology does not take into consideration the fact that CoFe or CoNiFe alloy having a high saturation magnetic flux density is formed with a small high-speed magnetic rate, that is, a small coercive force.
There are some difficulties in using these alloys as magnetic poles for thin film magnetic heads.
このような問題点を解決するために、本発明は。The present invention aims to solve these problems.
上記ＣｏＦｅまたはＣｏＮｉＦｅ合金が保磁力を小さく
形成されてなり、再生特性のよい薄膜磁気ヘッドを提供
することを目的とする。It is an object of the present invention to provide a thin film magnetic head with good reproduction characteristics, which is made of CoFe or CoNiFe alloy and has a small coercive force.
問題点を解決するための手段について述べる前に、本発
明を完成するに至った経緯について説明する。Before describing the means for solving the problems, the circumstances that led to the completion of the present invention will be explained.
耐熱性のよう磁性薄膜を実用する手段として、スパッタ
リング法が知られている。本発明者らは、ＣＯ濃度７０
％以上のＣｏＮｉＦｅ合金をカソードして、ガラス基板
上へのスパッタリング膜形成を試みた。A sputtering method is known as a means for practical application of heat-resistant magnetic thin films. The inventors found that CO concentration 70
% or more of CoNiFe alloy was used as a cathode, and an attempt was made to form a sputtering film on a glass substrate.
その結果、薄膜磁気ヘッド磁極に適用される、厚さ約１
μｍ程度のスパッタリング膜は、合金組成を変化させ、
またはスパッタリング電力、Ａｒガス圧を変化させても
保磁力Ｈａは３００ｅと大きく、膜には一軸磁気異方性
も誘起されなかった。しかし、スパッタリング膜厚を減
少させた場合は、困難軸方向保磁力ＨＣＨは、０．５
μｍ以下で息下に低下することがわかった。また、スパ
ッタリング時の基板温度を膜表面で１００’Ｃ以下に保
つことにより、１〜１．５ μｍの膜厚でも困難軸方向
保磁力を２０ｅ以下とすることができた。As a result, the thickness of approximately 1
A sputtered film with a size of about μm changes the alloy composition,
Even when the sputtering power and Ar gas pressure were changed, the coercive force Ha was as large as 300e, and no uniaxial magnetic anisotropy was induced in the film. However, when the sputtering film thickness is decreased, the hard axial coercive force HCH becomes 0.5
It was found that the value decreases with breathing below μm. Furthermore, by keeping the substrate temperature during sputtering at 100'C or less at the film surface, the coercive force in the difficult axial direction could be kept at 20e or less even with a film thickness of 1 to 1.5 μm.
すなわち、基板温度を低く保ち形成した合金膜あるいは
膜厚の小さい膜では、その平均結晶粒径が０．０６
μｍ以下とすることができる。その結果、困難軸方向保
磁力が低下したものと考えられる。In other words, an alloy film or a thin film formed while keeping the substrate temperature low has an average crystal grain size of 0.06.
It can be less than μm. As a result, it is thought that the coercive force in the hard axis direction decreased.
本発明は、かかる知見によりなされたものであり、その
内容は、基板上に第１の絶縁層を有し、当該絶縁層上に
下部磁性膜層、第２の絶縁層および上部磁性膜層が順に
積層され、下部および上部磁性膜層が一部分で接しかつ
同時分を巻回するコイルを第２の絶縁層内に有する薄膜
磁気ヘッドにおいて、前記磁性膜層の一部または全部は
磁性合金である。ＣｏＦｅまたはＣｏＮｉＦｅからなり
、当該磁性合金の結晶粒径の平均値がｏ、ｏ ｅ ミ
クロンメートル以下であることを特徴とする薄膜磁気ヘ
ッドである。The present invention has been made based on this knowledge, and its contents include a first insulating layer on a substrate, and a lower magnetic film layer, a second insulating layer, and an upper magnetic film layer on the insulating layer. In a thin film magnetic head having a coil in a second insulating layer which is laminated in sequence, the lower and upper magnetic film layers are partially in contact with each other, and the coils are wound at the same time, wherein part or all of the magnetic film layers are made of a magnetic alloy. . The present invention is a thin film magnetic head made of CoFe or CoNiFe, characterized in that the average crystal grain size of the magnetic alloy is not more than o, o e micrometers.
上記本発明において、磁性合金の結晶粒径の平均値が０
．０６ μｍ以下にする方法として、例えば次の方法が
ある。まず、磁性合金層をスパッタリング法により形成
し、１１作成時の基板温度を１００℃以下とする方法ｈ
ｖある。その他、磁性合金層厚さを０．５ μｍ以下と
し、磁性合金層間に別な金属の合金、誘電体を挟み込み
、多層化する方法である。In the present invention, the average value of the crystal grain size of the magnetic alloy is 0.
．． For example, the following method is available as a method for reducing the thickness to 0.06 μm or less. First, a method in which a magnetic alloy layer is formed by a sputtering method and the substrate temperature at the time of 11 creation is 100°C or lessh
There is v. Another method is to set the thickness of the magnetic alloy layer to 0.5 μm or less and sandwich another metal alloy or dielectric material between the magnetic alloy layers to form a multilayer structure.
この方法により、低保磁力で厚いＣｏＮｉＦｅ合金膜が
得られることがわかった。この方法は、基板が冷却でき
ない量産形のスパッタリング装置を用いた。 ＣｏＮｉ
Ｆｅ膜の形成に有利である。It was found that by this method, a thick CoNiFe alloy film with low coercive force can be obtained. This method used a mass-produced sputtering device in which the substrate could not be cooled. CoNi
This is advantageous for forming an Fe film.
上記本発明におけるＣｏＮｉＦｅまたはＣｏＦｅ磁性合
金の組成は、Ｃｏ１−ｘ−ツＮ１Ｊｅアと表記したとき
、Ｏ≦Ｘ≦０．２ かつＯ≦Ｘ≦０．１である。The composition of CoNiFe or CoFe magnetic alloy in the present invention is expressed as Co1-x-N1Je, and satisfies O≦X≦0.2 and O≦X≦0.1.
ＣｏＮｉＦｅまたはＣｏＦｅ磁性合金層の平均結晶粒径
を保磁力との関係を第１図に示し、基板温度と磁性合金
層の平均結晶粒径との関係を第３図に示し、磁性合金層
の膜厚と保磁力との関係を第４図に示す。Figure 1 shows the relationship between the average grain size of the CoNiFe or CoFe magnetic alloy layer and the coercive force, and Figure 3 shows the relationship between the substrate temperature and the average grain size of the magnetic alloy layer. Figure 4 shows the relationship between thickness and coercive force.
第１図かられかるように、結晶粒径が０．０６μｍ以下
のとき、保磁力を大幅に低下することができる。結晶粒
径を０．０６μｍ以下にすることにより、磁性合金膜の
保磁力が低下する理由について説明する。As can be seen from FIG. 1, when the crystal grain size is 0.06 μm or less, the coercive force can be significantly reduced. The reason why the coercive force of the magnetic alloy film decreases by setting the crystal grain size to 0.06 μm or less will be explained.
多結晶磁性合金の磁化は、平均容易軸方向に沿って結晶
粒ごとにばらついた微小な磁化の和であることが知られ
ている。この合金の平均磁化方向を回転させるため、外
部磁界を印加したとき、個々の結晶粒は、その結晶方位
により安定していた磁化を、よりエネルギーの高い方向
へ向けることになる。この回転のしやすさを表わすのが
、結晶磁気異方性エネルギーＫｌであり、高Ｃｏ濃度の
・ＣｏＮｉＦｅまたは、ＣｏＦｅ合金のに１は１０ ’
〜１０ ’ｅｒｇ／ａｊとパーマロイ（１０”ｅｒｇ／
ｅｌ＋？ ）の１００〜１０００倍である。粗大な結
晶粒と、それと同体積の微細な結晶粒では、各結晶粒間
の結晶方位が異なるため、磁気異方性エネルギーが低下
する。すなわち、結晶粒径がより微細であるほど、個々
の結晶磁気異方性は小さくなる。このことが細かい結晶
粒径のＣｏＮｉＦｅまたはＣｏＦｅ膜でのみ低い困難軸
方向保磁力を実現できる理由と考えられる。It is known that the magnetization of a polycrystalline magnetic alloy is the sum of minute magnetizations that vary from grain to grain along the mean easy axis direction. When an external magnetic field is applied to rotate the average magnetization direction of this alloy, individual crystal grains will direct their magnetization, which had been stable due to its crystal orientation, in a direction with higher energy. The ease of this rotation is expressed by the magnetocrystalline anisotropy energy Kl, and 1 is 10' for CoNiFe or CoFe alloy with a high Co concentration.
~10’erg/aj and permalloy (10”erg/
el+? ) is 100 to 1000 times. Since the crystal orientations between coarse crystal grains and fine crystal grains having the same volume differ, the magnetic anisotropy energy decreases. That is, the finer the crystal grain size, the smaller the individual magnetocrystalline anisotropy. This is considered to be the reason why only a CoNiFe or CoFe film with a fine crystal grain size can realize a low coercive force in the hard axis direction.
平均結晶粒径を０．０６ μｍ以下とすることにより耐
熱性が向上し、その結果、薄膜磁気ヘッド形成プロセス
中、膜が受けるも処理により磁性特性が劣化することな
く、保磁力が増大することもない、これは、平均結晶粒
径が十分小さいと、粒成長しないからである。Heat resistance is improved by setting the average crystal grain size to 0.06 μm or less, and as a result, the coercive force increases without deteriorating the magnetic properties even though the film is subjected to treatment during the process of forming a thin film magnetic head. No, because if the average crystal grain size is sufficiently small, grain growth will not occur.
次に、基板温度と平均結晶粒径との関係については、第
３図に示すように、基板温度が゛低く（１００℃以下）
保たれて形成された合金膜では、その平均結晶粒径が０
□０６ μｍ以下となっていることがわかる。Next, regarding the relationship between substrate temperature and average crystal grain size, as shown in Figure 3, the substrate temperature is low (below 100°C).
In the alloy film formed by maintaining the average grain size of 0
It can be seen that the diameter is □06 μm or less.
次に、膜厚と保磁力の関係については、第４図に示すよ
うに、膜厚が０．５ μｍ以下で、保磁力が小さいこと
がわかる。これは、次の理由による。Next, regarding the relationship between film thickness and coercive force, as shown in FIG. 4, it can be seen that when the film thickness is 0.5 μm or less, the coercive force is small. This is due to the following reason.
高い基板温度で、厚いＣｏＮｉＦｅ合金膜を形成した場
合、その膜厚方向の結晶粒径は、基板側が細かく、膜表
面に向って粗大化していることがわかった。It was found that when a thick CoNiFe alloy film is formed at a high substrate temperature, the crystal grain size in the film thickness direction is finer on the substrate side and becomes coarser toward the film surface.
そこで、第３図に示した層膜と保磁力の関係から、層厚
を０．５ μｍ以下とすればよい、この場合、磁性合金
層間に別な金属２合金、誘電体を挟み込み、多層膜化で
きる。多層膜とするこで保磁力が低下するのも、ＣｏＮ
１Ｆｏ結晶粒の成長を別な層によって断ち切ることによ
り、磁性層結晶粒径を０．０６μｍ以下としている効果
によると考えられる。Therefore, from the relationship between the layer film and the coercive force shown in Figure 3, the layer thickness should be 0.5 μm or less. In this case, two different metal alloys and a dielectric material are sandwiched between the magnetic alloy layers, and a multilayer film can be converted into The reason why the coercive force decreases due to the multilayer film is that CoN
This is thought to be due to the effect of cutting off the growth of 1Fo crystal grains with another layer, thereby reducing the magnetic layer crystal grain size to 0.06 μm or less.
以下、本発明の実施例について説明する。第１表に、Ｃ
ｏＮｉＦｅ合金のスパッタリング条件を示す。Examples of the present invention will be described below. In Table 1, C
The sputtering conditions for oNiFe alloy are shown below.
第１表
第１Ｍ！Ｊとし、ＮｉＦｅ、 Ａ Ｑ ２０３および５
ｉ（ｈを第２層として積層膜を形成し、その磁気特性を
各膜厚と各第２表に示す。Table 1, 1st M! J, NiFe, AQ 203 and 5
A laminated film was formed using i(h as the second layer), and its magnetic properties are shown in Table 2 along with each film thickness.
第２表
表中、ＮｉＦｅ、 Ａ Ｑ ２０３．５ｉＯｚ、は、い
ずれもＣｏＮ ｉＦｅと同一スパッタ装置内で、別なカ
ソードを用い、スパッタリングした。この条件を、第３
表に示す。In Table 2, NiFe and AQ 203.5iOz were both sputtered using different cathodes in the same sputtering apparatus as CoN iFe. This condition is the third
Shown in the table.
第３表
本実施例によけば、飽和磁束密度がパーマロイ（ｔｏｏ
ｏｏガウス）より大きく、かつ保磁力の小さいＣｏＮｉ
Ｆｅ多層膜が得られた。Table 3 According to this example, the saturation magnetic flux density is permalloy (too much).
CoNi which is larger than oo Gauss and has a small coercive force
A Fe multilayer film was obtained.
本発明の他の実施例について説明する。第１表に示した
負性で、基板を水冷しスパッタリングしたところ、第４
表に示す結果を得た。このときの基板温度は、５０〜６
０”Ｃであった。Other embodiments of the present invention will be described. When the substrate was water-cooled and sputtered with the negativity shown in Table 1, the fourth
The results shown in the table were obtained. The substrate temperature at this time is 50 to 6
It was 0''C.
第４表
この実施例によれば、膜厚が０．５μｍ以下で、保磁力
が小さいことがわかる。Table 4 According to this example, it can be seen that the film thickness is 0.5 μm or less and the coercive force is small.
また、本発明の第３の実施例について説明する。Further, a third embodiment of the present invention will be described.
第１表により形成したＣｏＮｉＦｅ合金（層厚０．１μ
ｍ）とＡｒｔｚＯｓ （７Ｊ／！Ｘ０．０１ μｍ）
多ＮＷＡ （１１ＷＪ’％１．１μｍ）を磁極として用
い、第２図に示す構造の１嘆磁気ヘッドを作製し、一方
パーマロイ（ｆ！Ａ厚１．１μｍ）を用いた薄膜磁気ヘ
ッドを作製し、両者の記録、再生特性を比較した。記録
媒体には、γ−ＦｅｚＯａ膜を用いた。多層膜を用い作
製した薄膜磁気ヘッドは、パーマロイ使用のものに比べ
記録後再生出力は約１．３倍となった。本実施例により
、磁極厚を減少させることにより、分解能を嘉めた薄膜
磁気ヘッドを作製できることがわかる。CoNiFe alloy formed according to Table 1 (layer thickness 0.1μ
m) and ArtzOs (7J/!X0.01 μm)
A single magnetic head with the structure shown in Fig. 2 was fabricated using multi-NWA (11WJ'% 1.1 μm) as a magnetic pole, and a thin film magnetic head using Permalloy (f!A thickness 1.1 μm) was fabricated. The recording and playback characteristics of the two were compared. A γ-FezOa film was used as the recording medium. The thin-film magnetic head fabricated using the multilayer film had approximately 1.3 times the readout output after recording compared to the one using permalloy. This example shows that a thin film magnetic head with improved resolution can be manufactured by reducing the magnetic pole thickness.
さらに、本発明の第４の実施例について説明する。第１
表によるＣｏＮｉＦｅ合金作製時、基板に対し互いに直
交する方向に順に磁界を印加し、成膜を行った。第５表
に条件を示す。Furthermore, a fourth embodiment of the present invention will be described. 1st
When producing the CoNiFe alloy according to the table, magnetic fields were sequentially applied to the substrate in directions orthogonal to each other to form a film. Table 5 shows the conditions.
第５表
このスイッチング磁界中スパッタリングによりＣｏＮｉ
Ｆｅの合金の異方性磁界を２０エルステツドから１２エ
ルステツドへ減少することができ、膜単体の透磁率を向
上させることができる。Table 5: By sputtering in this switching magnetic field, CoNi
The anisotropic magnetic field of the Fe alloy can be reduced from 20 oersted to 12 oersted, and the magnetic permeability of the film alone can be improved.
以上説明したように、本発明によれば、パーマロイ単層
膜より飽和磁束密度が大きく、保磁力が小さく、かつ耐
熱性のよい磁性薄膜を作製できるので、これを適用した
薄膜磁気ヘッドの分解能を高め、再生特性の良好な高記
録密度磁気記録用薄膜磁気ヘッドを提供できる効果があ
る。As explained above, according to the present invention, it is possible to fabricate a magnetic thin film that has a higher saturation magnetic flux density, lower coercive force, and better heat resistance than a permalloy single-layer film. This has the effect of providing a thin-film magnetic head for high-density magnetic recording with high recording density and good reproduction characteristics.
第１図はＣｏＮｉＦｅ結晶粒径と保磁力の関係を示すグ
ラフ、第２図は薄膜磁気ヘッド縦断面図および記録、再
生原理を示す図、第３図は結晶粒径と保磁力の関係を示
すグラフ、第４図はＣｏＮｉＦｅ膜厚と保磁力の関係を
示すグラフである。
１・・・下部磁性体、２・・・ギャップ部、５・・・コ
イル、６・・・上部磁性体、９・・・書込磁界、１０・
・・媒体よりの記録磁界、１２・・・記録媒体。Figure 1 is a graph showing the relationship between CoNiFe crystal grain size and coercive force, Figure 2 is a longitudinal cross-sectional view of a thin film magnetic head and a diagram showing the recording and reproducing principle, and Figure 3 is a graph showing the relationship between crystal grain size and coercive force. The graph shown in FIG. 4 is a graph showing the relationship between CoNiFe film thickness and coercive force. DESCRIPTION OF SYMBOLS 1... Lower magnetic body, 2... Gap part, 5... Coil, 6... Upper magnetic body, 9... Write magnetic field, 10...
... Recording magnetic field from the medium, 12... Recording medium.
Claims (1)
磁性膜層、第２の絶縁層および上部磁性膜層が順に積層
され、下部および上部磁性層が一部分で接しかつ同部分
を巻回するコイルを第２の絶縁層内に有する薄膜磁気ヘ
ッドにおいて、前記磁性膜層の一部または全部は磁性合
金であるＣｏＦｅまたは、ＣｏＮｉＦｅからなり、当該
磁性合金の結晶粒径の平均値が０．０６ミクロンメート
ル以下であることを特徴とする薄膜磁気ヘッド。1. A first insulating layer is provided on the substrate, and a lower magnetic film layer, a second insulating layer, and an upper magnetic film layer are laminated in this order on the insulating layer, and the lower and upper magnetic layers partially touch and are the same. In a thin film magnetic head having a coil wound around a second insulating layer in a second insulating layer, part or all of the magnetic film layer is made of a magnetic alloy such as CoFe or CoNiFe, and the average crystal grain size of the magnetic alloy is A thin film magnetic head characterized in that the magnetic head has a magnetic flux of 0.06 micrometers or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62146058A JPH083883B2 (en) | 1987-06-11 | 1987-06-11 | Thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62146058A JPH083883B2 (en) | 1987-06-11 | 1987-06-11 | Thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63311613A true JPS63311613A (en) | 1988-12-20 |
| JPH083883B2 JPH083883B2 (en) | 1996-01-17 |
Family
ID=15399132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62146058A Expired - Lifetime JPH083883B2 (en) | 1987-06-11 | 1987-06-11 | Thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH083883B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0240972A (en) * | 1988-07-29 | 1990-02-09 | Nec Corp | Magnetoresistance effect thin film |
| JPH05235435A (en) * | 1992-02-21 | 1993-09-10 | Ckd Corp | Magnetoresistance element |
| JP2014010880A (en) * | 2012-06-29 | 2014-01-20 | Seagate Technology Llc | Data storage unit, magnetic writing element, and method |
| US9378760B2 (en) | 2014-07-31 | 2016-06-28 | Seagate Technology Llc | Data reader with tuned microstructure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4661216A (en) * | 1986-04-21 | 1987-04-28 | International Business Machines Corporation | Electrodepositing CoNiFe alloys for thin film heads |
-
1987
- 1987-06-11 JP JP62146058A patent/JPH083883B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4661216A (en) * | 1986-04-21 | 1987-04-28 | International Business Machines Corporation | Electrodepositing CoNiFe alloys for thin film heads |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0240972A (en) * | 1988-07-29 | 1990-02-09 | Nec Corp | Magnetoresistance effect thin film |
| JPH05235435A (en) * | 1992-02-21 | 1993-09-10 | Ckd Corp | Magnetoresistance element |
| JP2014010880A (en) * | 2012-06-29 | 2014-01-20 | Seagate Technology Llc | Data storage unit, magnetic writing element, and method |
| US9142226B2 (en) | 2012-06-29 | 2015-09-22 | Seagate Technology Llc | Thin film with tuned grain size |
| US9378760B2 (en) | 2014-07-31 | 2016-06-28 | Seagate Technology Llc | Data reader with tuned microstructure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH083883B2 (en) | 1996-01-17 |
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