JPS59968A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59968A
JPS59968A JP57109599A JP10959982A JPS59968A JP S59968 A JPS59968 A JP S59968A JP 57109599 A JP57109599 A JP 57109599A JP 10959982 A JP10959982 A JP 10959982A JP S59968 A JPS59968 A JP S59968A
Authority
JP
Japan
Prior art keywords
layer
electron
composition ratio
semiconductor layer
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57109599A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0468775B2 (cs
Inventor
Tomonori Ishikawa
石川　知則
Sukehisa Hiyamizu
冷水　佐寿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57109599A priority Critical patent/JPS59968A/ja
Publication of JPS59968A publication Critical patent/JPS59968A/ja
Publication of JPH0468775B2 publication Critical patent/JPH0468775B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57109599A 1982-06-25 1982-06-25 半導体装置 Granted JPS59968A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57109599A JPS59968A (ja) 1982-06-25 1982-06-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57109599A JPS59968A (ja) 1982-06-25 1982-06-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS59968A true JPS59968A (ja) 1984-01-06
JPH0468775B2 JPH0468775B2 (cs) 1992-11-04

Family

ID=14514355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57109599A Granted JPS59968A (ja) 1982-06-25 1982-06-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS59968A (cs)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167475A (ja) * 1984-02-10 1985-08-30 Hitachi Ltd 半導体装置
JPS6147681A (ja) * 1984-07-31 1986-03-08 アメリカン　テレフォン　アンド　テレグラフ　カムパニー 可変禁制帯デバイス
JPS62130565A (ja) * 1985-11-30 1987-06-12 Fujitsu Ltd 電界効果型半導体装置
US4740822A (en) * 1984-04-19 1988-04-26 Nec Corporation Field effect device maintaining a high speed operation in a high voltage operation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147158A (ja) * 1982-02-26 1983-09-01 Oki Electric Ind Co Ltd 化合物半導体電界効果トランジスタ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147158A (ja) * 1982-02-26 1983-09-01 Oki Electric Ind Co Ltd 化合物半導体電界効果トランジスタ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167475A (ja) * 1984-02-10 1985-08-30 Hitachi Ltd 半導体装置
US4740822A (en) * 1984-04-19 1988-04-26 Nec Corporation Field effect device maintaining a high speed operation in a high voltage operation
US4866490A (en) * 1984-04-19 1989-09-12 Nec Corporation Field effect device maintaining a high speed operation in a high voltage operation
JPS6147681A (ja) * 1984-07-31 1986-03-08 アメリカン　テレフォン　アンド　テレグラフ　カムパニー 可変禁制帯デバイス
JPS62130565A (ja) * 1985-11-30 1987-06-12 Fujitsu Ltd 電界効果型半導体装置

Also Published As

Publication number Publication date
JPH0468775B2 (cs) 1992-11-04

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