JPS5996849U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS5996849U JPS5996849U JP19220282U JP19220282U JPS5996849U JP S5996849 U JPS5996849 U JP S5996849U JP 19220282 U JP19220282 U JP 19220282U JP 19220282 U JP19220282 U JP 19220282U JP S5996849 U JPS5996849 U JP S5996849U
- Authority
- JP
- Japan
- Prior art keywords
- metal
- semiconductor equipment
- reaction layer
- gold
- tin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05005—Structure
- H01L2224/05009—Bonding area integrally formed with a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
- H01L2224/05082—Two-layer arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来のダイオードチップの断面図、第2図は従
来のタイオードのパッケージへの組立図、第3図及び第
4図は何れもこの考案の半導体装置の生成品断面図、第
5図はこの考案ダイオードチップの断面図である。
各図で、1・・・金属、2・・・モリブテン層、3・・
・チタン層、4・・・酸化膜、12・・・錫層、13・
・・金−錫合金層、14・・・厚い金層。Figure 1 is a cross-sectional view of a conventional diode chip, Figure 2 is a diagram of a conventional diode assembled into a package, Figures 3 and 4 are cross-sectional views of the semiconductor device of this invention, and Figure 5. is a cross-sectional view of this invented diode chip. In each figure, 1...metal, 2...molybdenum layer, 3...
・Titanium layer, 4... Oxide film, 12... Tin layer, 13.
...Gold-tin alloy layer, 14...Thick gold layer.
Claims (1)
インジウム等の低融点金属と金との金属反応層と、この
金属反応層上に金属を堆積形成させた積層電極を具備す
ることを特徴とする半導体装置。 −A semiconductor characterized by comprising, as a metal electrode forming a bonding pad, a metal reaction layer of a low melting point metal such as tin or indium and gold, and a laminated electrode in which a metal is deposited on the metal reaction layer. Device. −
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19220282U JPS5996849U (en) | 1982-12-21 | 1982-12-21 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19220282U JPS5996849U (en) | 1982-12-21 | 1982-12-21 | semiconductor equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5996849U true JPS5996849U (en) | 1984-06-30 |
Family
ID=30413694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19220282U Pending JPS5996849U (en) | 1982-12-21 | 1982-12-21 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5996849U (en) |
-
1982
- 1982-12-21 JP JP19220282U patent/JPS5996849U/en active Pending
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