JPS5996720A - 薄膜半導体の製造方法 - Google Patents

薄膜半導体の製造方法

Info

Publication number
JPS5996720A
JPS5996720A JP57207378A JP20737882A JPS5996720A JP S5996720 A JPS5996720 A JP S5996720A JP 57207378 A JP57207378 A JP 57207378A JP 20737882 A JP20737882 A JP 20737882A JP S5996720 A JPS5996720 A JP S5996720A
Authority
JP
Japan
Prior art keywords
silicon
gas
hydrogen
torr
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57207378A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0113213B2 (cg-RX-API-DMAC7.html
Inventor
Kazuaki Miyamoto
和明 宮本
Toshio Kamisaka
上坂　外志夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to JP57207378A priority Critical patent/JPS5996720A/ja
Publication of JPS5996720A publication Critical patent/JPS5996720A/ja
Publication of JPH0113213B2 publication Critical patent/JPH0113213B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57207378A 1982-11-25 1982-11-25 薄膜半導体の製造方法 Granted JPS5996720A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57207378A JPS5996720A (ja) 1982-11-25 1982-11-25 薄膜半導体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57207378A JPS5996720A (ja) 1982-11-25 1982-11-25 薄膜半導体の製造方法

Publications (2)

Publication Number Publication Date
JPS5996720A true JPS5996720A (ja) 1984-06-04
JPH0113213B2 JPH0113213B2 (cg-RX-API-DMAC7.html) 1989-03-03

Family

ID=16538731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57207378A Granted JPS5996720A (ja) 1982-11-25 1982-11-25 薄膜半導体の製造方法

Country Status (1)

Country Link
JP (1) JPS5996720A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436035A (en) * 1991-12-05 1995-07-25 Alusuisse-Lonza Services Ltd. Coating a substrate surface with a permeation barrier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436035A (en) * 1991-12-05 1995-07-25 Alusuisse-Lonza Services Ltd. Coating a substrate surface with a permeation barrier

Also Published As

Publication number Publication date
JPH0113213B2 (cg-RX-API-DMAC7.html) 1989-03-03

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