JPS599519B2 - Manufacturing method for high-grade SIC whiskers - Google Patents
Manufacturing method for high-grade SIC whiskersInfo
- Publication number
- JPS599519B2 JPS599519B2 JP56143878A JP14387881A JPS599519B2 JP S599519 B2 JPS599519 B2 JP S599519B2 JP 56143878 A JP56143878 A JP 56143878A JP 14387881 A JP14387881 A JP 14387881A JP S599519 B2 JPS599519 B2 JP S599519B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- sic whiskers
- porous
- carbonaceous material
- carbon black
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
本発明は、粒状夾雑物を含まない高品位SiCホイスカ
一の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing high quality SiC whiskers free of particulate contaminants.
農業廃棄物として多量に発生する籾殻は、焼却処理によ
り無定形の二酸化けい素として残留するためSiCホイ
スカー製造用の安価な出発原料として注目されている。Rice husks, which are generated in large quantities as agricultural waste, remain as amorphous silicon dioxide after incineration and are therefore attracting attention as an inexpensive starting material for producing SiC whiskers.
製法としては、籾殻を直接、耐熱反応容器に詰め非酸化
性雰囲気下で1600℃附近の温度で加熱する方法、ま
たは籾殻を一旦灰化物に転化したのち適宜な炭材と混合
して反応容器に充填し、上記同様に加熱処理する方法が
知られているが、これら方法で得られるSiCホイスカ
一には同時に生成する粒子状のSiCが多量に混在する
難点がある。As for the manufacturing method, rice husks are directly packed into a heat-resistant reaction container and heated at a temperature of around 1600°C in a non-oxidizing atmosphere, or the rice husks are first converted into ash and then mixed with an appropriate carbon material and placed in a reaction container. Methods are known in which the SiC whiskers are filled and heated in the same manner as described above, but the problem is that the SiC whiskers obtained by these methods contain a large amount of particulate SiC that is simultaneously produced.
このため、高性能の複合強化材料として供するには、混
在する粒状SiCを分別することが要求される。Therefore, in order to use it as a high-performance composite reinforced material, it is required to separate the mixed granular SiC.
ところが粒訪8i Cは藻草状に生成したホイスカー繊
維組織内に絡み合った状態で夾雑するため、これを分別
するためには著しく煩瑣な分離操作が必要とされている
。However, since the grains 8i C are entangled in the whisker fiber structure formed in the form of algae, an extremely complicated separation operation is required to separate the whisker fibers.
本発明は、上記二次的分別処理を施すことなしに粒状S
iC不含の高品位SiCホイスカーを製造する方法を提
供するもので、その構成は、下層部に籾殼灰とカーボン
ブラックの配合原料を充填した反応容器の上層部に多孔
性あるいは繊維状の炭素質物を装入して生成区域を形成
し、容器底部から不活性ガスを流入拡散しながら130
0〜2000℃の温度域で加熱することを特徴とする。The present invention provides granular S without performing the above-mentioned secondary separation treatment.
This method provides a method for producing high-grade SiC whiskers that do not contain iC, and its structure consists of a reaction vessel filled with mixed raw materials of rice hull ash and carbon black in the lower part, and porous or fibrous carbon in the upper part. The material is charged to form a production zone, and an inert gas is introduced and diffused from the bottom of the container.
It is characterized by heating in a temperature range of 0 to 2000°C.
出発原料となる籾殻は600℃以上の温度で加熱焼却し
て一旦、灰化物に転化し、得られた籾殼灰に炭材を混合
して原料物質とする。Rice husks, which serve as a starting material, are heated and incinerated at a temperature of 600° C. or higher to once convert them into ash, and the resulting rice husk ash is mixed with carbon material to form a raw material.
炭材としてはカーボンブラックが用いられるが、充填時
、適度の通気性をもたせるために予めペレット状に造粒
したカーボンプラックを使用することが良好である。Carbon black is used as the carbonaceous material, but in order to provide appropriate air permeability during filling, it is preferable to use carbon plaque that has been granulated into pellets in advance.
また、籾殼灰に対するカーボンブラック炭材の配合比率
は、110〜400重量%の範囲に設定することが望ま
しい。Further, it is desirable that the blending ratio of carbon black carbonaceous material to rice hull ash is set in the range of 110 to 400% by weight.
反応容器は、例えば黒鉛材で構成され底部に不活性ガス
導入口および多孔拡散板を有する耐熱性の円筒密閉容器
が有用されるが、加熱処理を通して不活性ガスが循環し
て流通するような配管構造に設計しておくことが効果的
である。For example, a heat-resistant cylindrical closed container made of graphite material and having an inert gas inlet and a porous diffusion plate at the bottom is useful as the reaction container, but piping that allows the inert gas to circulate through the heat treatment is useful. It is effective to design the structure in advance.
反応容器には、まず原料物質を下層部に軽《充填し、そ
の上層部に多孔性あるいは繊維状の炭素質物を装入して
生成区域を形成する。First, the lower layer of the reaction vessel is lightly filled with raw materials, and the upper layer is charged with a porous or fibrous carbonaceous material to form a production zone.
該区域に詰められる多孔性あるいは繊維状の炭素質物は
、粒状の多孔質カーボン、活性炭、コークスあるいはカ
ーボンプラック、もしくは炭素繊維のフエルト、トウ、
クロスから選択される。The porous or fibrous carbonaceous material packed into the area may be granular porous carbon, activated carbon, coke or carbon plaque, or carbon fiber felt, tow,
Selected from the cross.
上層部に生成区域を形成した反応容器は、アチソン炉ま
たはクリブトール炉など適宜な加熱炉に入れ周囲を非酸
化性雰囲気に保持したのち、容器底部から不活性ガスを
流入しながら1300〜2000℃の温度に加熱する。The reaction vessel with a generation zone formed in the upper layer is placed in a suitable heating furnace such as an Acheson furnace or a Krybutol furnace, and the surrounding area is maintained in a non-oxidizing atmosphere.Then, the reaction vessel is heated at 1300 to 2000°C while inert gas is introduced from the bottom of the vessel. Heat to temperature.
流入する不活性ガスとしてはアルゴンまたはヘリウムが
適当で、窒素の使用は高温反応により部分的にSi3N
4を生成する虞れがあり好ましくない。Argon or helium is suitable as the inert gas flowing in, and the use of nitrogen partially converts Si3N due to high temperature reaction.
4 may be generated, which is not preferable.
また、不活性ガスの供給は、多孔拡散板を介して反応成
分ガスを上層の生成区域に円滑に伴送しえる程度の流量
であればよく、空間流速として1〜20mml秒の範囲
にあれば足りる。In addition, the inert gas may be supplied at a flow rate that can smoothly transport the reaction component gas to the generation zone in the upper layer through the porous diffusion plate, and the space flow velocity may be in the range of 1 to 20 mm/sec. Enough.
加熱過程で原料物質から発生した気相反応成分(SiO
およびCO)は、反応容器底部から流入拡散する不活性
ガスに伴われながら上昇して生成区域に至り、表面積の
大きい多孔性あるいは繊維状炭素質物の充填層内で反応
を完結する。Gas phase reaction components (SiO
and CO) rises along with the inert gas flowing in and diffusing from the bottom of the reaction vessel, reaches the production zone, and completes the reaction in a packed bed of porous or fibrous carbonaceous material with a large surface area.
生成したSiCホイスカーは、充填炭素質物の表面もし
くは内部に綿状に密生付着する。The generated SiC whiskers adhere densely in a cotton-like manner to the surface or inside of the filled carbonaceous material.
反応生成後、容器から生成区域の充填炭素質物を取り出
し密生付着したSiCホイスカーを回収する。After the reaction and production, the filled carbonaceous material in the production area is taken out from the container and the densely attached SiC whiskers are collected.
SiCホイスカーの回収は、充填炭素質物を焼却して炭
素分を除去する方法、または充填炭素質物を水洗して付
着するSiCホイスカーを分別する方法を用いておこな
われるが、とくに炭素繊維のトウ、フエルト、クロスな
ど表面性状が比較的平滑な繊維状物を充填炭素質物とす
る場合には後者の水洗法が効果的に適用される。SiC whiskers are recovered by incinerating the filled carbonaceous material to remove the carbon content, or by washing the filled carbonaceous material with water and separating the adhering SiC whiskers. The latter water washing method is effectively applied when the filled carbonaceous material is a fibrous material with a relatively smooth surface such as cloth.
該水洗法においては、必要に応じて振盪あるいは超音波
洗滌などの手段を用いて付着するSiCホイスカ一を十
分に分別し、さらに沢過処理を施す等の諸工程を必要と
するが、充填炭素質物が再使用できる利点かあるため高
価な充填材料を用いる際に有効である。This water washing method requires various steps such as thoroughly separating the adhering SiC whiskers using means such as shaking or ultrasonic washing as necessary, and further performing a filtration treatment. This method is effective when using expensive filling materials because it has the advantage that the materials can be reused.
このようにして得られるSiCホイスカーは、夾雑物を
全く含まない高品位のもので、その性状は直径0.2〜
0.5μm、長さ500〜1000μmの良好なアスペ
クト比を有する単結晶である。The SiC whiskers obtained in this way are of high quality and do not contain any impurities, and have a diameter of 0.2~
It is a single crystal with a good aspect ratio of 0.5 μm and a length of 500 to 1000 μm.
したがって、窒化けい素やアルミニウムなどセラミツク
系あるいは金属系コンポジットを目的とする高性能強化
材として極めて有用である。Therefore, it is extremely useful as a high-performance reinforcing material for ceramic-based or metal-based composites such as silicon nitride and aluminum.
実施例 1
乾喋した籾殻を電気炉中で600゜Cの温度で焼却して
得られた籾殼灰に、造粒ペレット化したIISAF−H
e級ファーネスカーボンブラック〔“SEAST 5
H“東海カーボン(株)製〕を200重量%の配合比率
で均一に混合した。Example 1 Pelletized IISAF-H was added to rice husk ash obtained by incinerating dry rice husk at a temperature of 600°C in an electric furnace.
e-class furnace carbon black [“SEAST 5
H "manufactured by Tokai Carbon Co., Ltd." was uniformly mixed at a blending ratio of 200% by weight.
混合原料を、底部に黒鉛多孔拡散板を介してガス導入管
を配設した内径70mm、高さ150韮の高純度黒鉛製
反応容器に70mmの高さまで充填した。The mixed raw materials were filled to a height of 70 mm into a reaction vessel made of high-purity graphite and having an inner diameter of 70 mm and a height of 150 mm, in which a gas introduction pipe was disposed at the bottom via a graphite porous diffusion plate.
次いで上層部に平均粒度6X10mmの椰子殼活性炭を
軽く装入して生成区域を形成した。The upper layer was then lightly charged with coconut shell activated carbon having an average particle size of 6×10 mm to form a generation zone.
容器上部に黒鉛蓋を付してクリプトール炉に移し、ガス
導入管から5朋/秒の流速でアルゴンガスを流入拡散し
ながら昇温し、炉内を1750℃の温度に4時間加熱し
た。A graphite lid was attached to the top of the container, and the container was transferred to a Kryptol furnace, and the temperature was raised while argon gas was introduced and diffused from the gas introduction tube at a flow rate of 5 h/sec, and the inside of the furnace was heated to a temperature of 1750° C. for 4 hours.
加熱後の反応容器内部は、生成区域を構成する椰子殼活
性炭層の全域に淡緑白色の綿状生成物が密生付着してい
た。Inside the reaction vessel after heating, a pale greenish-white flocculent product was densely adhered to the entire area of the coconut shell activated carbon layer constituting the production zone.
反応容器から椰子殼活性炭層を集収し、大気中で700
゜Cの温度に熱処理して炭素成分を燃焼除去した。Collect the coconut shell activated carbon layer from the reaction vessel and store it in the atmosphere for 700 minutes.
The carbon components were burned off by heat treatment at a temperature of °C.
残留した生成物は、直径0.2〜0.5μm、長さ50
0〜1000μmのβ型結晶形を有する純粋なSiCホ
イスカ一で、その生成収率は原料籾殻対比で3.6%(
重量)であった。The remaining product has a diameter of 0.2-0.5 μm and a length of 50 μm.
It is a pure SiC whisker with a β-type crystal form of 0 to 1000 μm, and its production yield is 3.6% (compared to the raw material rice husk).
weight).
実施例 2
生成区域の充填炭素質物として炭素繊維のトウを用い、
これを乱雑に装填したほかは実施例1と同一の装置およ
び条件により加熱処理をおこなった。Example 2 Using carbon fiber tow as the filler carbonaceous material in the production zone,
The heat treatment was carried out using the same equipment and conditions as in Example 1, except that the samples were loaded randomly.
反応容器から炭素繊維層を集収してビーカー内に移し、
純水を注入したのち振盪して繊維表面に密生付着したS
iCホイスカ一を十分に水洗分別した。Collect the carbon fiber layer from the reaction vessel and transfer it into a beaker;
After injecting pure water and shaking, S thickly adhered to the fiber surface.
The iC whiskers were thoroughly washed with water and separated.
ついで炭素繊維を取り出し、ビーカー内容物をf過した
。The carbon fibers were then taken out and the contents of the beaker was filtered.
f過残渣は、乾燥後、焼却処理して残留する炭素成分を
燃焼除去した。After drying, the residue was incinerated to burn off the remaining carbon components.
得ラれたSiCホイスカーは、実施例1と同様、夾雑物
不含の純粋β型単結晶で、生成収率は原料籾殻に対し3
.1%(重量)であった。As in Example 1, the obtained SiC whiskers were pure β-type single crystals containing no impurities, and the production yield was 3% compared to the raw material rice husks.
.. It was 1% (weight).
Claims (1)
填した反応容器の上層部に多孔性あるいは繊維状の炭素
質物を装入して生成区域を形成し、容器底部から不活性
ガスを流入拡散しながら1300〜2000’Cの温度
域で加熱することを特徴とする高品位SiCホイスカー
の製造方法。 2 生成区域を形成する多孔性あるいは繊維状の炭素質
物が、粒状の多孔質カーボン、活性炭、コークスあるい
はカーボンブラック、もしくは炭素繊維のフエルト、ト
ウ、クロスから選択される特許請求の範囲第1項記載の
高品位SiCホイスカーの製造方法。 3 容器底部から流入拡散する不活性ガスをアルゴンと
し、拡散板を介して1〜20mm/fFJ)の空間流速
で供給する特許請求の範囲第1項記載の高品位SiCホ
イスカーの製造方法。[Scope of Claims] 1. A production zone is formed by charging a porous or fibrous carbonaceous material into the upper layer of a reaction vessel whose lower layer is filled with mixed raw materials of rice husk ash and carbon black. A method for producing high-grade SiC whiskers, which comprises heating in a temperature range of 1300 to 2000'C while inflowing and diffusing active gas. 2. The porous or fibrous carbonaceous material forming the generation zone is selected from granular porous carbon, activated carbon, coke, carbon black, or carbon fiber felt, tow, or cloth. A method for manufacturing high-grade SiC whiskers. 3. The method for manufacturing high-quality SiC whiskers according to claim 1, wherein the inert gas flowing in and diffusing from the bottom of the container is argon, and is supplied through a diffusion plate at a spatial flow rate of 1 to 20 mm/fFJ.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56143878A JPS599519B2 (en) | 1981-09-14 | 1981-09-14 | Manufacturing method for high-grade SIC whiskers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56143878A JPS599519B2 (en) | 1981-09-14 | 1981-09-14 | Manufacturing method for high-grade SIC whiskers |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5845197A JPS5845197A (en) | 1983-03-16 |
JPS599519B2 true JPS599519B2 (en) | 1984-03-02 |
Family
ID=15349107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56143878A Expired JPS599519B2 (en) | 1981-09-14 | 1981-09-14 | Manufacturing method for high-grade SIC whiskers |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS599519B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02122414U (en) * | 1989-03-22 | 1990-10-08 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58199709A (en) * | 1982-05-13 | 1983-11-21 | Fuji Carbon Seizosho:Kk | Manufacture of needlelike sic and needlelike sic-graphite composite |
JPS59213700A (en) * | 1983-05-18 | 1984-12-03 | Tokai Carbon Co Ltd | Preparation of sic whisker |
US4915924A (en) * | 1987-08-12 | 1990-04-10 | Alcan International Limited | Method of preparing whiskers of silicon carbide and other materials |
DE4202960A1 (en) * | 1992-02-01 | 1993-08-05 | Ernst Apparatebau Gmbh & Co | Soot filter with ring space |
-
1981
- 1981-09-14 JP JP56143878A patent/JPS599519B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02122414U (en) * | 1989-03-22 | 1990-10-08 |
Also Published As
Publication number | Publication date |
---|---|
JPS5845197A (en) | 1983-03-16 |
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