JPS5845196A - Manufacture of silicon carbide whiskers - Google Patents

Manufacture of silicon carbide whiskers

Info

Publication number
JPS5845196A
JPS5845196A JP56143877A JP14387781A JPS5845196A JP S5845196 A JPS5845196 A JP S5845196A JP 56143877 A JP56143877 A JP 56143877A JP 14387781 A JP14387781 A JP 14387781A JP S5845196 A JPS5845196 A JP S5845196A
Authority
JP
Japan
Prior art keywords
silicon carbide
ashes
reaction vessel
silica
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56143877A
Other languages
Japanese (ja)
Other versions
JPS599518B2 (en
Inventor
Jotaro Yamada
山田 穣太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
Original Assignee
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Co Ltd filed Critical Tokai Carbon Co Ltd
Priority to JP56143877A priority Critical patent/JPS599518B2/en
Publication of JPS5845196A publication Critical patent/JPS5845196A/en
Publication of JPS599518B2 publication Critical patent/JPS599518B2/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides

Abstract

PURPOSE:To reduce an amount of granular silicon carbide impurity, by substituting a specified range of amount of grain hull ashes for very fine powder of silica in manufacturing silicon carbide whiskers by mixing a specified amount of carbon black with hull ashes, filling a reaction vessel with the mixture, and heating it at a specified temp. in a nonoxidative atmosphere. CONSTITUTION:10-30wt% of hull ashes used for silicon source is substituted for very fine silica powder having 7-40mum primary particle diameter. With this mixture, 110-400wt% carbon black is mixed based on the ashes and silica, and filled into a graphite reaction vessel. The inside of the vessel is substituted by a nonoxidative gas, then, current is passed through the vessel to maintain it at 1,300-1,700 deg.C for at least 2hr, resulting in producing high quality silicon carbide whiskers containing very little granular silicon carbide impurity. Addition of 80-200wt% halogenides of alkali metals or alkali earth metals elevates efficiency based on the ashes and silica.

Description

【発明の詳細な説明】 本発明は、籾殻灰(けい素置原料)とカーボンブラック
炭材の混合物を基本原料とする改良された81Cホイス
カ・−の製造法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improved method for producing 81C whiskers using a mixture of rice husk ash (silicon raw material) and carbon black as a basic raw material.

農**棄物として多量に副生する籾殻は、焼却灰化する
と相当な量O無定形810.に転化するため、81Cホ
イスカー製造用の安価有用なけい素置原料としての適格
性がある。
Rice husk, which is produced in large quantities as agricultural waste, becomes a considerable amount of amorphous 810. Therefore, it is suitable as an inexpensive and useful silica raw material for the production of 81C whiskers.

出願人は、IEKこの点に着目して研究を重ね、籾殻を
含むイネ科植物の果実殻もしく社茎の灰化残渣を叶い素
置原料としこれに最適な炭材としてカーボンブラックを
選定配合して原材料とすることにより、8iC粒状夾雑
物の少ない81Cホイスカーを高水準の生成状率で製造
する方法を開発(%願昭56−95086号)したが、
本発明は更に改良を加え、特にコンポジット強化材とし
ての用途に障害となる81C粒状夾雑物の混在化を一層
抑止し友ものである。
The applicant has focused on this point and has conducted extensive research, and has selected and blended carbon black as the most suitable carbon material for the use of the ashing residue of the fruit husks or stalks of gramineous plants, including rice husks, as a raw material. We have developed a method to produce 81C whiskers with a high level of formation rate with less 8iC particulate contaminants by using them as raw materials (%Grant No. 56-95086).
The present invention has been further improved to further suppress the inclusion of 81C particulate contaminants, which would be a hindrance to use as a composite reinforcing material.

すなわち、本発明の岐提となる前記先願技術は、籾殻な
どの灰化残渣(妙い素置原料)K110〜400重量−
のカーボンブラック炭材を混合した原料(以下、「基本
原料」という。)を例えば黒鉛のような耐熱製反応容器
に充填し非酸化性雰囲気下で1500〜1700℃の温
度に加熱することを要件とする。この方法によると、直
径0.2〜Q、5量m、長さ50〜80μsのβ型81
Cyh(スカーが8%(対籾殻、重量−)を越える高生
成収率で得られるうえに、夾雑する81量粒状物の含有
量を効果的に低減することができる利点がある。しかし
ながら、この含有率を5−以下におさえることは未だ困
難で、とくに炭材としてペレット状造粒カーボンブラッ
クを用いる場合3FiEliCホイスカーの収率向上に
対しては一層有効に作用する一方、大粒の81C夾雑物
が反応容器の周辺部に偏在生成する現象が生じる。
That is, the prior art, which is the basis of the present invention, uses ashing residues such as rice husks (unique raw material) K110 to 400 by weight.
The requirement is to fill a raw material mixed with carbon black carbonaceous material (hereinafter referred to as "basic raw material") into a heat-resistant reaction vessel such as graphite and heat it to a temperature of 1500 to 1700 °C in a non-oxidizing atmosphere. shall be. According to this method, β-type 81 with a diameter of 0.2 to Q, an amount of 5 m, and a length of 50 to 80 μs
Cyh (scar) can be obtained with a high production yield exceeding 8% (relative to rice husk, weight -), and has the advantage of effectively reducing the content of contaminating particulate matter. It is still difficult to suppress the content to 5- or less, and while it is particularly effective in improving the yield of 3FiEliC whiskers when pelletized carbon black is used as the carbon material, large particles of 81C contaminants A phenomenon occurs in which the particles are unevenly generated around the periphery of the reaction vessel.

本発明は、けい素置原料となる籾殻灰の一部を超微粉二
酸化けい素により置換して反応容器内に共存させること
により8jC粒状夾緘物の混在化を最小限に抑えたもの
である。
The present invention minimizes the mixing of 8jC granular debris by replacing a part of the rice husk ash, which is a raw material for silicon deposition, with ultrafine silicon dioxide and allowing it to coexist in the reaction vessel. .

超微粉二酸化けい素としては、1次粒子直径が7〜40
mμの高度の比表面積と分散性をもつコロイド性けい酸
が有効に3用され、籾殻灰の10〜50911(重量)
相当量の範囲で置換配合する。
As ultrafine silicon dioxide, the primary particle diameter is 7 to 40.
Colloidal silicic acid with a high specific surface area and dispersibility of mμ has been effectively used to reduce rice husk ash from 10 to 50911 (by weight).
Substitute and mix within a considerable amount.

この置換配合比率は限定的で、10%(重量)未満では
1000粒状夾−物の生成抑止効果は乏しく、他方、5
0−(重量)を越える一合には81Cホイスカーの生成
ならびに成長が著るしく阻害される結果を招く。
This replacement blending ratio is limited; if it is less than 10% (by weight), the effect of inhibiting the production of 1000 particulate contaminants is poor;
If the weight exceeds 0-(weight), the production and growth of 81C whiskers will be significantly inhibited.

超微粉二酸化けい素を反応容器内に共存させるには、上
記置換配合し喪けい素置原料をカーボンブラック炭材と
混合し全体を均一混合原料として反応容器に充填するか
、反応容器の中心部に基本原料を装入しこれを被包する
状態で前記置換配合し九均−混合原料を周辺部のみに光
礪する方法がとられる。このうち、後者の方法は炭材に
ベレット状造粒カーボンブラックを用いる場合に有効で
あり、大粒の81C夾雑物が反応容器の周辺部に偏在生
成する現象はほぼ全面的に解消する。
In order to make ultrafine silicon dioxide coexist in the reaction vessel, either the above-mentioned substitution blended silicon-based raw material is mixed with carbon black carbonaceous material and the whole is filled into the reaction vessel as a uniformly mixed raw material, or the mixture is filled in the center of the reaction vessel. A method is adopted in which the basic raw materials are charged and encapsulated, the above-mentioned substitution blending is carried out, and the nine-uniform mixed raw materials are concentrated only in the periphery. Among these methods, the latter method is effective when pellet-like granulated carbon black is used as the carbon material, and almost completely eliminates the phenomenon in which large grains of 81C contaminants are unevenly produced in the periphery of the reaction vessel.

原料物質には、NaC4,MaF、 KCIなどの7)
bカリ金属ハロゲン化物t+はMyCl、 、 CaF
、などのアルカリ土類金属ハロゲン化物を籾殻灰に対し
80〜200重量−〇範囲で予め混合しておくと、得ら
れる81Cホイスカーの生成収率と結晶の伸長を助長す
る効果を与える。
Raw materials include NaC4, MaF, KCI, etc. 7)
b Potassium metal halide t+ is MyCl, , CaF
When an alkaline earth metal halide such as , etc. is mixed in advance with rice husk ash in an amount of 80 to 200 weight - 0, it has the effect of promoting the production yield of 81C whiskers and the elongation of the crystals.

原料物質を充填した反応容器は、周囲をコークス粒など
のカーボンバッキング材で被包し、非酸化性雰囲気下に
保持しながら1300〜1700t、望ましくは!50
0〜1600’Cの温度に少くとも2時間加熱する。加
熱過程で原料物質中のけい素成分と炭素成分は気相反応
により微小繊維状のEliCに転化し、最終的に炭材カ
ーボンブラックの粒子構造内部あるいは相互空間の全域
に亘って綿状のホイスカーとして密生するが、810粒
状夾雑物の生成は原料物質中に共存する超微粉二酸化け
い素の作用によ抄極めて効果的に抑止される。
The reaction vessel filled with the raw materials is surrounded by a carbon backing material such as coke grains, and is maintained in a non-oxidizing atmosphere with a weight of 1,300 to 1,700 tons, preferably! 50
Heat to a temperature of 0-1600'C for at least 2 hours. During the heating process, the silicon component and carbon component in the raw material are converted into fine fibrous EliC through a gas phase reaction, and eventually flocculent whiskers are formed within the particle structure of the carbonaceous material carbon black or throughout the mutual space. However, the formation of 810 particulate contaminants is extremely effectively suppressed by the action of ultrafine silicon dioxide coexisting in the raw material.

生成物中に残留する未反応の炭材カーボンブラックは、
空気中に燃焼処理することにより容易に除去することが
できる。
Unreacted carbon black remaining in the product is
It can be easily removed by combustion treatment in air.

燃焼処理後の生成物は、5%以下の微粒子状81Cを含
むほかは全て淡緑白色を呈するβ型81Cホイスカーで
ある。
The products after the combustion treatment are all β-type 81C whiskers, which are pale greenish white except that they contain less than 5% of particulate 81C.

このように、本発明によれば粒状81G夾雑物の極めて
少ない高品位os1cホイスカーが製造できるから、こ
れらを分離精製する必要なしに七フ2ックスあるいは金
属用複合強化材として供用できる利点がある。
As described above, according to the present invention, high-quality OS1C whiskers with very little granular 81G contaminants can be produced, so there is an advantage that they can be used as 7Fx or composite reinforcing materials for metals without the need for separation and purification.

実施例! 乾燥し九籾殻を、電気炉中で600t:のIIIIlを
保持しながら恒量となるまで焼却灰化した。得られた籾
殻灰畔淡灰色を呈する微粉末で、灰化残留率は20.5
%<11量)、8101を有事a91.9−(重量)で
あった。
Example! The nine dried rice husks were incinerated into ashes in an electric furnace while retaining 600 tons of IIIL until they reached a constant weight. The resulting rice husk ash is a fine powder with a light gray color, and the ash residual rate is 20.5.
%<11 amount), 8101 was a91.9-(weight).

上記籾殻灰に対し5〜4o−(重量)の範囲て1次粒子
直径約t2mμ(平均)の超微粉二酸化けい素(日本ア
エロジル■II#ム1RO8工I、 、 $200)を
配合した数種類の置換砂い素置原料を調製し、その各々
に未造粒カーボンブラック炭材〔東海カーdlン@製、
’81A8’r、 51)をt5o%(1量)の配合割
合で添加し十分均一に混合し友。
Several types of ultra-fine silicon dioxide (Japan Aerosil ■ II # M1RO8 Engineering I, $200) with a primary particle diameter of approximately t2 mμ (average) in the range of 5 to 4 o-(weight) were mixed with the above rice husk ash. Displaced sandy clay raw materials were prepared, and ungranulated carbon black carbonaceous material [manufactured by Tokai Car dln@,
Add '81A8'r, 51) at a blending ratio of t5o% (1 amount) and mix thoroughly and uniformly.

混合した原料物質の各S O,Oりを内径700゜高さ
150mの高純度黒鉛製反応容器に軽く充填し、反応容
器の上部に黒鉛蓋を付してクリグトー実施例2 籾殻灰に150%(重量)のベレット状造粒カーボンブ
ラック炭材〔東海カーボン■製、’6111iム8T。
Each of the mixed raw materials, SO and O, was lightly filled into a high-purity graphite reaction vessel with an inner diameter of 700° and a height of 150 m, and a graphite lid was attached to the top of the reaction vessel. (Weight) of pellet-shaped granulated carbon black carbon material [manufactured by Tokai Carbon ■, '6111im 8T.

5H)を均一混合した基本原料と、この基本原料のうち
籾殻灰の20%(重量)相当量を超微粉二酸化けい素〔
日本アエロジル[1M、IhIBnos工り。
5H) and an amount equivalent to 20% (weight) of the rice husk ash from this basic raw material was mixed with ultrafine silicon dioxide [
Nippon Aerosil [1M, IhIBnos processing.

ナ200〕で置換配合した原料(置換原料)をそれぞt
準備し、前者の基本原料を反応容器の中心部に入れこれ
を周辺から後者の置換原料で被包するように充填したの
ち実施例1と同−処理条件上用いて81Cホイスカーを
生成させた。
t of each raw material (replacement raw material)
The former basic raw material was put into the center of the reaction vessel and filled from the periphery so as to be covered with the latter replacement raw material, and then 81C whiskers were produced using the same processing conditions as in Example 1.

加熱処理後の状況は、ペレット状造粒カーボンブラック
炭材の単味使用時(基本原料のみ充填)線状態を呈して
いた。この場合の81Cボイスカー収率(対籾殻、重量
%)は8.7饅、粒状81C夾雑物含有率は5%、そし
てホイスカーの性状は直径0.2〜0.5μm、長さ3
0〜80/jff+であった。
The condition after the heat treatment was the same as when the pelletized granulated carbon black material was used alone (only the basic raw material was filled). In this case, the 81C voice ker yield (relative to rice husks, weight %) was 8.7 mounds, the content of granular 81C impurities was 5%, and the whiskers had a diameter of 0.2 to 0.5 μm and a length of 3
It was 0 to 80/jff+.

519−519-

Claims (1)

【特許請求の範囲】 り籾殻灰に110〜400重量−のカーボンシラツク炭
材を混合してなる基本原料を反応容器に充填し非酸化性
雰囲気下で1500〜1700℃に加熱する方法におい
て、1次粒子直径7〜40mμの超微粉二酸化けい素を
前記籾殻灰oxo−5ofk(重量)相当量の範囲で置
換配合することにより反応容器中に共存させることを特
徴とするEliCホイスカーの製造法・ 2籾殻灰に対し80〜2oo重量−のアルカリ金属また
はアルカリ土類金属のI・ロゲン化物を混合する特許請
求の範囲#!1項記載の81Cホイスカーの製造法。
[Claims] A method in which a basic raw material prepared by mixing rice husk ash with 110 to 400 weight of carbon silk carbon material is charged into a reaction vessel and heated to 1500 to 1700°C in a non-oxidizing atmosphere, A method for producing EliC whiskers, characterized in that ultrafine silicon dioxide having a primary particle diameter of 7 to 40 mμ is allowed to coexist in a reaction vessel by replacing and blending in an amount equivalent to the rice husk ash oxo-5ofk (weight). 2. Claim #: Mixing 80 to 2 oo weight of alkali metal or alkaline earth metal I-loginide to rice husk ash! 81C whisker manufacturing method according to item 1.
JP56143877A 1981-09-14 1981-09-14 SIC whisker manufacturing method Expired JPS599518B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56143877A JPS599518B2 (en) 1981-09-14 1981-09-14 SIC whisker manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56143877A JPS599518B2 (en) 1981-09-14 1981-09-14 SIC whisker manufacturing method

Publications (2)

Publication Number Publication Date
JPS5845196A true JPS5845196A (en) 1983-03-16
JPS599518B2 JPS599518B2 (en) 1984-03-02

Family

ID=15349082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56143877A Expired JPS599518B2 (en) 1981-09-14 1981-09-14 SIC whisker manufacturing method

Country Status (1)

Country Link
JP (1) JPS599518B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59213700A (en) * 1983-05-18 1984-12-03 Tokai Carbon Co Ltd Preparation of sic whisker
US4971834A (en) * 1989-06-29 1990-11-20 Therm Incorporated Process for preparing precursor for silicon carbide whiskers

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59213700A (en) * 1983-05-18 1984-12-03 Tokai Carbon Co Ltd Preparation of sic whisker
JPS6310120B2 (en) * 1983-05-18 1988-03-03 Tokai Carbon Kk
US4971834A (en) * 1989-06-29 1990-11-20 Therm Incorporated Process for preparing precursor for silicon carbide whiskers

Also Published As

Publication number Publication date
JPS599518B2 (en) 1984-03-02

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