JPS59923A - Projection type light exposing device - Google Patents

Projection type light exposing device

Info

Publication number
JPS59923A
JPS59923A JP57109523A JP10952382A JPS59923A JP S59923 A JPS59923 A JP S59923A JP 57109523 A JP57109523 A JP 57109523A JP 10952382 A JP10952382 A JP 10952382A JP S59923 A JPS59923 A JP S59923A
Authority
JP
Japan
Prior art keywords
mirror
photomask
projection type
half mirror
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57109523A
Other languages
Japanese (ja)
Inventor
Shinji Sato
信二 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57109523A priority Critical patent/JPS59923A/en
Publication of JPS59923A publication Critical patent/JPS59923A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Projection-Type Copiers In General (AREA)

Abstract

PURPOSE:To contrive improvement in working efficiency by a method wherein two sheets of semiconductor wafers are exposure-treated simultaneously for a sheet of photomask. CONSTITUTION:A half mirror 14, which transmits and reflects the light irradiated from above a photomask, is transmitted in-between the photomask and the projetion lens 131 of the projection type exposing device. A mirror 15, which reflects the reflected light coming from the mirror 14, and the second projection lens 132, which projects the light coming from the mirror 15, are arranged in parallel with said mirror 14, thereby enabling to simultaneously perform an exposure processing on two sheets of semiconductor wafers 171 and 172 pertaining to a sheet of reticle 16.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体ウニ凸表面に塗布されたホトレジストに
ホトマスクの７９ターンを転写する際に使用される投影
型露光装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a projection exposure apparatus used for transferring 79 turns of a photomask onto a photoresist coated on a convex surface of a semiconductor sea urchin.

〔発明の技術的背景及びその問題点〕[Technical background of the invention and its problems]

半導体装置の製造においては、回路パターンを半導体ウ
ェハ上に形成するために、ホトマスクを用いてそのパタ
ーンを半導体ウニ凸表面に塗布されたホトレジストに転
写する工程が何度も行われる。現在、最も普及している
転写技術はホトマスクとホトレジストを密着させて露光
する密着露光であるが、ホトマスクとホトレジストの接
触により欠陥が発生する等の種々の欠点′がある。In the manufacture of semiconductor devices, in order to form a circuit pattern on a semiconductor wafer, the process of using a photomask to transfer the pattern onto a photoresist coated on the surface of a semiconductor urchin convexity is performed many times. Currently, the most popular transfer technology is contact exposure, in which a photomask and photoresist are brought into close contact with each other for exposure, but this method has various drawbacks, such as defects occurring due to contact between the photomask and photoresist.

そこで、ホトマスクと半導体ウェハ上のホトレジストと
を所定距離隔て、ホトマスクの・臂ターンをホトレジス
ト上に結像して露光を行う投影露光に推移する傾向にあ
る。Therefore, there is a trend toward projection exposure in which the photomask and the photoresist on the semiconductor wafer are separated by a predetermined distance, and the photomask's arm turn is imaged onto the photoresist for exposure.

以下、従来の縮小投影型露光装置の要部を第１図を参照
して説明する。Hereinafter, the main parts of a conventional reduction projection type exposure apparatus will be explained with reference to FIG.

図中１はステージであシＸＹ方向に移動できるようにな
っている。このステージ１上にはウェハチャ、り２が配
設されている。また、このウェハチャ、り２上には所定
距離隔てて縮小投影レンズ３が配設されている。更に、
この縮小投影レンズ３上には所定距離隔ててレティクル
（拡大マスク）４が配設されている。In the figure, 1 is a stage that can be moved in the X and Y directions. On this stage 1, a wafer tray 2 is arranged. Further, a reduction projection lens 3 is disposed on the wafer tray 2 at a predetermined distance. Furthermore,
A reticle (enlargement mask) 4 is disposed on the reduction projection lens 3 at a predetermined distance.

上述した装置を用いてレティクル４のパターンを転写す
るには、まず、ウェハチャック２上に表面にホトレジス
トが塗布された半導体ウェハ５を載置し、ステージ１を
ＸＹ方向に移動させて位置合せを行う。次に、レティク
ル４上から紫外線（ｇ線）を照射して露光すれば、縮小
投影し／ズ３により縮小されたパターンが半導体ウェハ
５表面に塗布されたホトレジストに転写される。In order to transfer the pattern of the reticle 4 using the above-mentioned apparatus, first, the semiconductor wafer 5 whose surface is coated with photoresist is placed on the wafer chuck 2, and the stage 1 is moved in the X and Y directions to align it. conduct. Next, when the reticle 4 is irradiated with ultraviolet rays (g-rays) and exposed, the pattern reduced by the reduction projection/zoom 3 is transferred to the photoresist coated on the surface of the semiconductor wafer 5.

しかしながら、上述した装置では１枚のレティクル４に
ついて１枚の半導体ウェハ５しか露光処理できないため
作業能率が悪いという欠点がある。However, the above-mentioned apparatus has the drawback that only one semiconductor wafer 5 can be exposed for one reticle 4, resulting in poor work efficiency.

〔発明の目的〕[Purpose of the invention]

本発明は１枚のホトマスクについて、一度に２枚の半導
体ウェハを露光処理できるようにし、作業能率を向上し
得る投影型露光装置を提供することを目的とするもので
ある。SUMMARY OF THE INVENTION An object of the present invention is to provide a projection exposure apparatus that can expose two semiconductor wafers at a time using one photomask, thereby improving work efficiency.

〔発明の概要〕[Summary of the invention]

本発明の投影型露光装置は、従来の投影型露光装置のホ
トマスクと投影レンズとの間にホトマスク上から照射さ
れた光を透過し、かつ反射するハーフミラ−を配設し、
更に、このハーフミラ−と平行に配設され、ハーフミラ
−からの反射光を反射するミラー及びこのミラーからの
反射光を投影する第２の投影レンズを配設することによ
シ、１枚のホトマスクについて１度に２枚の半導体ウェ
ハの露光処理を行えるように　　　−したものである。The projection exposure apparatus of the present invention is provided with a half mirror that transmits and reflects light emitted from above the photomask between the photomask and the projection lens of the conventional projection exposure apparatus,
Furthermore, by disposing a mirror that is arranged in parallel with this half mirror and that reflects the reflected light from the half mirror, and a second projection lens that projects the reflected light from this mirror, one photomask can be formed. It is designed to be able to perform exposure processing on two semiconductor wafers at a time.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例を第２図を参照して説明する。 Hereinafter, embodiments of the present invention will be described with reference to FIG.

図中１１はステージであシ、ｘｙ力方向移動できるよう
になっている。このステージ１ノ上には第１及び第２の
ウェハチャックｌ　２１　＋　１２２が配設されている
。また、この第１及び第２のウェハチャ、り１２１　＋
　１２ｚ上には所定比離隔てて夫々第１及び第２の縮小
投影レンズ１’３ｇ、１３２が配設されている。また、
第１の縮小投影レンズ１３１上にはハーフミラ−１４が
前記ステージ１１表面に対して４５°傾斜して配設され
、第２の縮小投影レンズ１３！上にはミラー１５が同様
に４５°傾斜して配設されている。更に、前記ハーフミ
ラ−１４上にはレティクル（拡大マスク）１６が配設さ
れている。In the figure, reference numeral 11 is a stage that can move in the x and y force directions. On this stage 1, first and second wafer chucks l 21 + 122 are arranged. In addition, the first and second wafer chas 121 +
First and second reduction projection lenses 1'3g and 132 are arranged on the lens 12z at a predetermined distance from each other. Also,
A half mirror 14 is disposed on the first reduction projection lens 131 at an angle of 45° with respect to the surface of the stage 11, and the second reduction projection lens 13! A mirror 15 is similarly arranged at an angle of 45° above. Furthermore, a reticle (enlargement mask) 16 is arranged on the half mirror 14.

上述した装置を用いてレティクル４のパターンを転写す
るには、まず、第１及び第２のウェハチャック１２１　
＊　１２２上に夫々表面にホトレジストが塗布された第
１及び第２の半導体ウニ／％１１１．１７．を載置し、
ステージ１１をＸＹ方向に移動させて位置合せを行う。In order to transfer the pattern of the reticle 4 using the above-described device, first, the first and second wafer chucks 121 are
*First and second semiconductor sea urchins whose surfaces are coated with photoresist on 122/% 111.17. Place the
Positioning is performed by moving the stage 11 in the XY directions.

次に、レティクル１６上から紫外線（ｇ線）を照射する
。この際、レティクル１６を透過し、更にハーフミラ−
１４を透過した光は第１の縮小投影レンズ１３１により
第１の半導体ウェハ１７１上で結像し、縮小され九ノ々
ターンが第１の半導体ウェハ１７１表面に塗布されたホ
トレジストに転写される。一方、レティク今１６を透過
し、ハーフミラ−１４で反射され、更にミラー１５で反
射された光は第２の縮小投影レンズ１３２により第２の
半導体ウェハ１７２上で結像し、縮小されたパターンが
第２の半導体ウェハ１７２表面に塗布されたホトレジス
トに転写される。Next, ultraviolet light (g-ray) is irradiated from above the reticle 16. At this time, it passes through the reticle 16 and furthermore the half mirror.
The light transmitted through the lens 14 forms an image on the first semiconductor wafer 171 by the first reduction projection lens 131, and the nine-note pattern is transferred to the photoresist coated on the surface of the first semiconductor wafer 171. On the other hand, the light transmitted through the reticule 16, reflected by the half mirror 14, and further reflected by the mirror 15 is imaged by the second reduction projection lens 132 on the second semiconductor wafer 172, and the reduced pattern is The image is transferred to the photoresist applied to the surface of the second semiconductor wafer 172.

しかして、上述した装置によれば、１枚のレティクル１
６について１度に２枚の半導体ウェハ１７１　ｒ　１７
意の露光処理を行うことができるので作業能率が向上す
る。According to the above-described device, one reticle 1
Two semiconductor wafers at a time about 6 171 r 17
Since the exposure process can be performed as desired, work efficiency is improved.

なお、上記実施例は本発明を縮小投影型露光装置に適用
したものであるが、等倍投影型露光装置に適用してもよ
い。In the above embodiment, the present invention is applied to a reduction projection type exposure apparatus, but it may also be applied to a same-size projection type exposure apparatus.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、１枚のホトマスクについて一度に２枚
の半導体ウェハを露光処理できるようにし、作業能率を
向上し得る投影型露光装置を提供できるものである。According to the present invention, it is possible to provide a projection type exposure apparatus that can expose two semiconductor wafers at a time using one photomask and improve work efficiency.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の縮小投影型露光装置の要部を示す構成図
、第２図は本発明の実施例における縮小投影型露光装置
の要部を示す構成図である。 １１・・・ステージ、’２１＋１２１・・・第１及び第
２のウェハチャック、１３１，１３２・・・第１及び第
２の縮小投影レンズ、１４・・・ハーフミラ−１１５・
・・ミラー、１６・・・レティクル、１７１．１７２・
・・第１及び第２の半導体ウェハ。 出願人代理人　弁理士　鈴　江　武　音節１図 ９線FIG. 1 is a block diagram showing the main parts of a conventional reduction projection type exposure apparatus, and FIG. 2 is a block diagram showing the main parts of a reduction projection type exposure apparatus in an embodiment of the present invention. DESCRIPTION OF SYMBOLS 11... Stage, '21+121... First and second wafer chucks, 131, 132... First and second reduction projection lenses, 14... Half mirror 115.
...Mirror, 16...Reticle, 171.172.
...first and second semiconductor wafers. Applicant's Representative Patent Attorney Takeshi Suzue Syllable 1 Diagram 9 Lines

Claims (1)

【特許請求の範囲】[Claims] ホト１スクに光を照射し、そのパターンヲ投影レンズを
用いてステージ上に載置された半導体ウェハ上に転写す
る投影型露光装置において、前記ホトマスクと投影レン
ズとの間に配設され九バー７ミ２−と、該ハーフミラ−
と平行に配設され、該ハーフミラ−からの反射光を反射
するミラーと、該ミラー下に配設された第２の投影レン
ズとを具備したことを特徴とする投影型露光装置。In a projection type exposure apparatus that irradiates a photomask with light and uses a projection lens to transfer the pattern onto a semiconductor wafer placed on a stage, a nine bar 7 is disposed between the photomask and the projection lens. Mi2 and the half mirror
1. A projection exposure apparatus comprising: a mirror disposed parallel to the half mirror to reflect light reflected from the half mirror; and a second projection lens disposed below the mirror.
JP57109523A 1982-06-25 1982-06-25 Projection type light exposing device Pending JPS59923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57109523A JPS59923A (en) 1982-06-25 1982-06-25 Projection type light exposing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57109523A JPS59923A (en) 1982-06-25 1982-06-25 Projection type light exposing device

Publications (1)

Publication Number Publication Date
JPS59923A true JPS59923A (en) 1984-01-06

Family

ID=14512410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57109523A Pending JPS59923A (en) 1982-06-25 1982-06-25 Projection type light exposing device

Country Status (1)

Country Link
JP (1) JPS59923A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4746573A (en) * 1985-03-29 1988-05-24 Ausimonth S.P.A. Flowing (free-flowing) granular compositions based on fluorinated elastomers
EP0313200A2 (en) * 1987-10-22 1989-04-26 Mrs Technology, Inc Apparatus and method for making large area electronic devices, such as flat panel displays and the like, using correlated, aligned dual optical systems
USRE33836E (en) * 1987-10-22 1992-03-03 Mrs Technology, Inc. Apparatus and method for making large area electronic devices, such as flat panel displays and the like, using correlated, aligned dual optical systems
JPH0786157A (en) * 1993-08-23 1995-03-31 Internatl Business Mach Corp <Ibm> Equipment and method for picture projection
US6480262B1 (en) 1993-06-30 2002-11-12 Nikon Corporation Illumination optical apparatus for illuminating a mask, method of manufacturing and using same, and field stop used therein
CN107065449A (en) * 2017-04-18 2017-08-18 武汉华星光电技术有限公司 Exposure sources and exposure method
CN109270809A (en) * 2018-09-26 2019-01-25 苏州微影激光技术有限公司 Layout exposure device and its exposure method of the subregion to bit pattern

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4746573A (en) * 1985-03-29 1988-05-24 Ausimonth S.P.A. Flowing (free-flowing) granular compositions based on fluorinated elastomers
EP0313200A2 (en) * 1987-10-22 1989-04-26 Mrs Technology, Inc Apparatus and method for making large area electronic devices, such as flat panel displays and the like, using correlated, aligned dual optical systems
USRE33836E (en) * 1987-10-22 1992-03-03 Mrs Technology, Inc. Apparatus and method for making large area electronic devices, such as flat panel displays and the like, using correlated, aligned dual optical systems
US6480262B1 (en) 1993-06-30 2002-11-12 Nikon Corporation Illumination optical apparatus for illuminating a mask, method of manufacturing and using same, and field stop used therein
US6509954B1 (en) 1993-06-30 2003-01-21 Nikon Corporation Aperture stop having central aperture region defined by a circular ARC and peripheral region with decreased width, and exposure apparatus and method
US6556278B1 (en) 1993-06-30 2003-04-29 Nikon Corporation Exposure/imaging apparatus and method in which imaging characteristics of a projection optical system are adjusted
US6795169B2 (en) 1993-06-30 2004-09-21 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
US7023527B2 (en) 1993-06-30 2006-04-04 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
US7088425B2 (en) 1993-06-30 2006-08-08 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
JPH0786157A (en) * 1993-08-23 1995-03-31 Internatl Business Mach Corp <Ibm> Equipment and method for picture projection
CN107065449A (en) * 2017-04-18 2017-08-18 武汉华星光电技术有限公司 Exposure sources and exposure method
CN109270809A (en) * 2018-09-26 2019-01-25 苏州微影激光技术有限公司 Layout exposure device and its exposure method of the subregion to bit pattern

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